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Electron properties and surface effects of rare-earth systems

Identifieur interne : 001248 ( Pascal/Corpus ); précédent : 001247; suivant : 001249

Electron properties and surface effects of rare-earth systems

Auteurs : C. Laubschat

Source :

RBID : Pascal:98-0046699

Descripteurs français

English descriptors

Abstract

Recent experimental results concerning the surface-related electronic structure of rare-earth solids are presented. Special attention is paid to the occurrence of surface-valence transitions in trivalent or mixed-valent compounds of Sm, Eu, Tm, and Yb that are due to energetically lowering of unoccupied 4f-states caused by the reduced atomic coordination at the surface. Similar phenomena are encountered in Ce-systems leading to a decrease of 4f-hybridization in the outermost atomic surface layer. The importance of this phenomenon for the correct interpretation of electron-spectroscopic data of Ce-systems is discussed. Experimental evidence for transitions from a localized to an itinerant behavior of the 4f-states is obtained for CeRh3.

Notice en format standard (ISO 2709)

Pour connaître la documentation sur le format Inist Standard.

pA  
A05       @2 65
A06       @2 6
A08 01  1  ENG  @1 Electron properties and surface effects of rare-earth systems
A11 01  1    @1 LAUBSCHAT (C.)
A14 01      @1 Institut für Oberflächenphysik und Mikrostrukturphysik, TU Dresden @2 01062 Dresden @3 DEU @Z 1 aut.
A20       @1 573-579
A21       @1 1997
A23 01      @0 ENG
A43 01      @1 INIST @2 16194A @5 354000079770780060
A44       @0 0000 @1 © 1998 INIST-CNRS. All rights reserved.
A45       @0 33 ref.
A47 01  1    @0 98-0046699
A60       @1 P @2 C
A61       @0 A
A64   2    @0 Applied physics. A, Materials science & processing
A66 01      @0 DEU
C01 01    ENG  @0 Recent experimental results concerning the surface-related electronic structure of rare-earth solids are presented. Special attention is paid to the occurrence of surface-valence transitions in trivalent or mixed-valent compounds of Sm, Eu, Tm, and Yb that are due to energetically lowering of unoccupied 4f-states caused by the reduced atomic coordination at the surface. Similar phenomena are encountered in Ce-systems leading to a decrease of 4f-hybridization in the outermost atomic surface layer. The importance of this phenomenon for the correct interpretation of electron-spectroscopic data of Ce-systems is discussed. Experimental evidence for transitions from a localized to an itinerant behavior of the 4f-states is obtained for CeRh3.
C02 01  3    @0 001B70C20A
C02 02  3    @0 001B70I60D
C02 03  X    @0 240
C03 01  X  FRE  @0 Etat électronique surface @5 01
C03 01  X  ENG  @0 Surface electron state @5 01
C03 01  X  SPA  @0 Estado electrónico superficie @5 01
C03 02  3  FRE  @0 Structure électronique @5 02
C03 02  3  ENG  @0 Electronic structure @5 02
C03 03  3  FRE  @0 Hybridation @5 03
C03 03  3  ENG  @0 Hybridization @5 03
C03 04  3  FRE  @0 Valence @5 04
C03 04  3  ENG  @0 Valence @5 04
C03 05  3  FRE  @0 Composé valence mixte @5 05
C03 05  3  ENG  @0 Mixed-valence compounds @5 05
C03 06  X  FRE  @0 Modèle itinérant @5 06
C03 06  X  ENG  @0 Itinerant model @5 06
C03 06  X  SPA  @0 Modelo itinerante @5 06
C03 07  3  FRE  @0 Spectrométrie photoélectron @5 07
C03 07  3  ENG  @0 Photoelectron spectroscopy @5 07
C03 08  X  FRE  @0 Photoémission inverse @5 08
C03 08  X  ENG  @0 Inverse photoemission @5 08
C03 08  X  SPA  @0 Fotoemisión inversa @5 08
C03 09  3  FRE  @0 Niveau coeur @5 09
C03 09  3  ENG  @0 Core levels @5 09
C03 10  X  FRE  @0 Etat multiplet @5 10
C03 10  X  ENG  @0 Multiplet state @5 10
C03 10  X  SPA  @0 Estado multiplete @5 10
C03 11  X  FRE  @0 Effet Fano @5 11
C03 11  X  ENG  @0 Fano effect @5 11
C03 11  X  SPA  @0 Efecto Fano @5 11
C03 12  X  FRE  @0 Délocalisation électronique @5 12
C03 12  X  ENG  @0 Electron delocalization @5 12
C03 12  X  SPA  @0 Deslocalización electrónica @5 12
C03 13  3  FRE  @0 Couche mince @5 13
C03 13  3  ENG  @0 Thin films @5 13
C03 14  3  FRE  @0 Terbium @2 NC @5 14
C03 14  3  ENG  @0 Terbium @2 NC @5 14
C03 15  3  FRE  @0 Thulium @2 NC @5 15
C03 15  3  ENG  @0 Thulium @2 NC @5 15
C03 16  3  FRE  @0 Etude expérimentale @5 18
C03 16  3  ENG  @0 Experimental study @5 18
C03 17  3  FRE  @0 7320A @2 PAC @4 INC @5 56
C03 18  3  FRE  @0 7960D @2 PAC @4 INC @5 57
C07 01  3  FRE  @0 Lanthanide @2 NC @5 16
C07 01  3  ENG  @0 Rare earths @2 NC @5 16
C07 02  3  FRE  @0 Lanthanide alliage @5 17
C07 02  3  ENG  @0 Rare earth alloys @5 17
N21       @1 026
pR  
A30 01  1  GER  @1 DPG-Frühjahrstagung @3 Münster DEU @4 1997

Format Inist (serveur)

NO : PASCAL 98-0046699 INIST
ET : Electron properties and surface effects of rare-earth systems
AU : LAUBSCHAT (C.)
AF : Institut für Oberflächenphysik und Mikrostrukturphysik, TU Dresden/01062 Dresden/Allemagne (1 aut.)
DT : Publication en série; Congrès; Niveau analytique
SO : Applied physics. A, Materials science & processing; Allemagne; Da. 1997; Vol. 65; No. 6; Pp. 573-579; Bibl. 33 ref.
LA : Anglais
EA : Recent experimental results concerning the surface-related electronic structure of rare-earth solids are presented. Special attention is paid to the occurrence of surface-valence transitions in trivalent or mixed-valent compounds of Sm, Eu, Tm, and Yb that are due to energetically lowering of unoccupied 4f-states caused by the reduced atomic coordination at the surface. Similar phenomena are encountered in Ce-systems leading to a decrease of 4f-hybridization in the outermost atomic surface layer. The importance of this phenomenon for the correct interpretation of electron-spectroscopic data of Ce-systems is discussed. Experimental evidence for transitions from a localized to an itinerant behavior of the 4f-states is obtained for CeRh3.
CC : 001B70C20A; 001B70I60D; 240
FD : Etat électronique surface; Structure électronique; Hybridation; Valence; Composé valence mixte; Modèle itinérant; Spectrométrie photoélectron; Photoémission inverse; Niveau coeur; Etat multiplet; Effet Fano; Délocalisation électronique; Couche mince; Terbium; Thulium; Etude expérimentale; 7320A; 7960D
FG : Lanthanide; Lanthanide alliage
ED : Surface electron state; Electronic structure; Hybridization; Valence; Mixed-valence compounds; Itinerant model; Photoelectron spectroscopy; Inverse photoemission; Core levels; Multiplet state; Fano effect; Electron delocalization; Thin films; Terbium; Thulium; Experimental study
EG : Rare earths; Rare earth alloys
SD : Estado electrónico superficie; Modelo itinerante; Fotoemisión inversa; Estado multiplete; Efecto Fano; Deslocalización electrónica
LO : INIST-16194A.354000079770780060
ID : 98-0046699

Links to Exploration step

Pascal:98-0046699

Le document en format XML

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<div type="abstract" xml:lang="en">Recent experimental results concerning the surface-related electronic structure of rare-earth solids are presented. Special attention is paid to the occurrence of surface-valence transitions in trivalent or mixed-valent compounds of Sm, Eu, Tm, and Yb that are due to energetically lowering of unoccupied 4f-states caused by the reduced atomic coordination at the surface. Similar phenomena are encountered in Ce-systems leading to a decrease of 4f-hybridization in the outermost atomic surface layer. The importance of this phenomenon for the correct interpretation of electron-spectroscopic data of Ce-systems is discussed. Experimental evidence for transitions from a localized to an itinerant behavior of the 4f-states is obtained for CeRh
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