Electron properties and surface effects of rare-earth systems
Identifieur interne :
001248 ( Pascal/Corpus );
précédent :
001247;
suivant :
001249
Electron properties and surface effects of rare-earth systems
Auteurs : C. LaubschatSource :
-
Applied physics. A, Materials science & processing
RBID : Pascal:98-0046699
Descripteurs français
- Pascal (Inist)
- Etat électronique surface,
Structure électronique,
Hybridation,
Valence,
Composé valence mixte,
Modèle itinérant,
Spectrométrie photoélectron,
Photoémission inverse,
Niveau coeur,
Etat multiplet,
Effet Fano,
Délocalisation électronique,
Couche mince,
Terbium,
Thulium,
Etude expérimentale,
7320A,
7960D.
English descriptors
- KwdEn :
- Core levels,
Electron delocalization,
Electronic structure,
Experimental study,
Fano effect,
Hybridization,
Inverse photoemission,
Itinerant model,
Mixed-valence compounds,
Multiplet state,
Photoelectron spectroscopy,
Surface electron state,
Terbium,
Thin films,
Thulium,
Valence.
Abstract
Recent experimental results concerning the surface-related electronic structure of rare-earth solids are presented. Special attention is paid to the occurrence of surface-valence transitions in trivalent or mixed-valent compounds of Sm, Eu, Tm, and Yb that are due to energetically lowering of unoccupied 4f-states caused by the reduced atomic coordination at the surface. Similar phenomena are encountered in Ce-systems leading to a decrease of 4f-hybridization in the outermost atomic surface layer. The importance of this phenomenon for the correct interpretation of electron-spectroscopic data of Ce-systems is discussed. Experimental evidence for transitions from a localized to an itinerant behavior of the 4f-states is obtained for CeRh3.
Notice en format standard (ISO 2709)
Pour connaître la documentation sur le format Inist Standard.
pA |
A05 | | | | @2 65 |
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A06 | | | | @2 6 |
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A08 | 01 | 1 | ENG | @1 Electron properties and surface effects of rare-earth systems |
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A11 | 01 | 1 | | @1 LAUBSCHAT (C.) |
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A14 | 01 | | | @1 Institut für Oberflächenphysik und Mikrostrukturphysik, TU Dresden @2 01062 Dresden @3 DEU @Z 1 aut. |
---|
A20 | | | | @1 573-579 |
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A21 | | | | @1 1997 |
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A23 | 01 | | | @0 ENG |
---|
A43 | 01 | | | @1 INIST @2 16194A @5 354000079770780060 |
---|
A44 | | | | @0 0000 @1 © 1998 INIST-CNRS. All rights reserved. |
---|
A45 | | | | @0 33 ref. |
---|
A47 | 01 | 1 | | @0 98-0046699 |
---|
A60 | | | | @1 P @2 C |
---|
A61 | | | | @0 A |
---|
A64 | | 2 | | @0 Applied physics. A, Materials science & processing |
---|
A66 | 01 | | | @0 DEU |
---|
C01 | 01 | | ENG | @0 Recent experimental results concerning the surface-related electronic structure of rare-earth solids are presented. Special attention is paid to the occurrence of surface-valence transitions in trivalent or mixed-valent compounds of Sm, Eu, Tm, and Yb that are due to energetically lowering of unoccupied 4f-states caused by the reduced atomic coordination at the surface. Similar phenomena are encountered in Ce-systems leading to a decrease of 4f-hybridization in the outermost atomic surface layer. The importance of this phenomenon for the correct interpretation of electron-spectroscopic data of Ce-systems is discussed. Experimental evidence for transitions from a localized to an itinerant behavior of the 4f-states is obtained for CeRh3. |
---|
C02 | 01 | 3 | | @0 001B70C20A |
---|
C02 | 02 | 3 | | @0 001B70I60D |
---|
C02 | 03 | X | | @0 240 |
---|
C03 | 01 | X | FRE | @0 Etat électronique surface @5 01 |
---|
C03 | 01 | X | ENG | @0 Surface electron state @5 01 |
---|
C03 | 01 | X | SPA | @0 Estado electrónico superficie @5 01 |
---|
C03 | 02 | 3 | FRE | @0 Structure électronique @5 02 |
---|
C03 | 02 | 3 | ENG | @0 Electronic structure @5 02 |
---|
C03 | 03 | 3 | FRE | @0 Hybridation @5 03 |
---|
C03 | 03 | 3 | ENG | @0 Hybridization @5 03 |
---|
C03 | 04 | 3 | FRE | @0 Valence @5 04 |
---|
C03 | 04 | 3 | ENG | @0 Valence @5 04 |
---|
C03 | 05 | 3 | FRE | @0 Composé valence mixte @5 05 |
---|
C03 | 05 | 3 | ENG | @0 Mixed-valence compounds @5 05 |
---|
C03 | 06 | X | FRE | @0 Modèle itinérant @5 06 |
---|
C03 | 06 | X | ENG | @0 Itinerant model @5 06 |
---|
C03 | 06 | X | SPA | @0 Modelo itinerante @5 06 |
---|
C03 | 07 | 3 | FRE | @0 Spectrométrie photoélectron @5 07 |
---|
C03 | 07 | 3 | ENG | @0 Photoelectron spectroscopy @5 07 |
---|
C03 | 08 | X | FRE | @0 Photoémission inverse @5 08 |
---|
C03 | 08 | X | ENG | @0 Inverse photoemission @5 08 |
---|
C03 | 08 | X | SPA | @0 Fotoemisión inversa @5 08 |
---|
C03 | 09 | 3 | FRE | @0 Niveau coeur @5 09 |
---|
C03 | 09 | 3 | ENG | @0 Core levels @5 09 |
---|
C03 | 10 | X | FRE | @0 Etat multiplet @5 10 |
---|
C03 | 10 | X | ENG | @0 Multiplet state @5 10 |
---|
C03 | 10 | X | SPA | @0 Estado multiplete @5 10 |
---|
C03 | 11 | X | FRE | @0 Effet Fano @5 11 |
---|
C03 | 11 | X | ENG | @0 Fano effect @5 11 |
---|
C03 | 11 | X | SPA | @0 Efecto Fano @5 11 |
---|
C03 | 12 | X | FRE | @0 Délocalisation électronique @5 12 |
---|
C03 | 12 | X | ENG | @0 Electron delocalization @5 12 |
---|
C03 | 12 | X | SPA | @0 Deslocalización electrónica @5 12 |
---|
C03 | 13 | 3 | FRE | @0 Couche mince @5 13 |
---|
C03 | 13 | 3 | ENG | @0 Thin films @5 13 |
---|
C03 | 14 | 3 | FRE | @0 Terbium @2 NC @5 14 |
---|
C03 | 14 | 3 | ENG | @0 Terbium @2 NC @5 14 |
---|
C03 | 15 | 3 | FRE | @0 Thulium @2 NC @5 15 |
---|
C03 | 15 | 3 | ENG | @0 Thulium @2 NC @5 15 |
---|
C03 | 16 | 3 | FRE | @0 Etude expérimentale @5 18 |
---|
C03 | 16 | 3 | ENG | @0 Experimental study @5 18 |
---|
C03 | 17 | 3 | FRE | @0 7320A @2 PAC @4 INC @5 56 |
---|
C03 | 18 | 3 | FRE | @0 7960D @2 PAC @4 INC @5 57 |
---|
C07 | 01 | 3 | FRE | @0 Lanthanide @2 NC @5 16 |
---|
C07 | 01 | 3 | ENG | @0 Rare earths @2 NC @5 16 |
---|
C07 | 02 | 3 | FRE | @0 Lanthanide alliage @5 17 |
---|
C07 | 02 | 3 | ENG | @0 Rare earth alloys @5 17 |
---|
N21 | | | | @1 026 |
---|
|
pR |
A30 | 01 | 1 | GER | @1 DPG-Frühjahrstagung @3 Münster DEU @4 1997 |
---|
|
Format Inist (serveur)
NO : | PASCAL 98-0046699 INIST |
ET : | Electron properties and surface effects of rare-earth systems |
AU : | LAUBSCHAT (C.) |
AF : | Institut für Oberflächenphysik und Mikrostrukturphysik, TU Dresden/01062 Dresden/Allemagne (1 aut.) |
DT : | Publication en série; Congrès; Niveau analytique |
SO : | Applied physics. A, Materials science & processing; Allemagne; Da. 1997; Vol. 65; No. 6; Pp. 573-579; Bibl. 33 ref. |
LA : | Anglais |
EA : | Recent experimental results concerning the surface-related electronic structure of rare-earth solids are presented. Special attention is paid to the occurrence of surface-valence transitions in trivalent or mixed-valent compounds of Sm, Eu, Tm, and Yb that are due to energetically lowering of unoccupied 4f-states caused by the reduced atomic coordination at the surface. Similar phenomena are encountered in Ce-systems leading to a decrease of 4f-hybridization in the outermost atomic surface layer. The importance of this phenomenon for the correct interpretation of electron-spectroscopic data of Ce-systems is discussed. Experimental evidence for transitions from a localized to an itinerant behavior of the 4f-states is obtained for CeRh3. |
CC : | 001B70C20A; 001B70I60D; 240 |
FD : | Etat électronique surface; Structure électronique; Hybridation; Valence; Composé valence mixte; Modèle itinérant; Spectrométrie photoélectron; Photoémission inverse; Niveau coeur; Etat multiplet; Effet Fano; Délocalisation électronique; Couche mince; Terbium; Thulium; Etude expérimentale; 7320A; 7960D |
FG : | Lanthanide; Lanthanide alliage |
ED : | Surface electron state; Electronic structure; Hybridization; Valence; Mixed-valence compounds; Itinerant model; Photoelectron spectroscopy; Inverse photoemission; Core levels; Multiplet state; Fano effect; Electron delocalization; Thin films; Terbium; Thulium; Experimental study |
EG : | Rare earths; Rare earth alloys |
SD : | Estado electrónico superficie; Modelo itinerante; Fotoemisión inversa; Estado multiplete; Efecto Fano; Deslocalización electrónica |
LO : | INIST-16194A.354000079770780060 |
ID : | 98-0046699 |
Links to Exploration step
Pascal:98-0046699
Le document en format XML
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<s2>01062 Dresden</s2>
<s3>DEU</s3>
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<term>Experimental study</term>
<term>Fano effect</term>
<term>Hybridization</term>
<term>Inverse photoemission</term>
<term>Itinerant model</term>
<term>Mixed-valence compounds</term>
<term>Multiplet state</term>
<term>Photoelectron spectroscopy</term>
<term>Surface electron state</term>
<term>Terbium</term>
<term>Thin films</term>
<term>Thulium</term>
<term>Valence</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Etat électronique surface</term>
<term>Structure électronique</term>
<term>Hybridation</term>
<term>Valence</term>
<term>Composé valence mixte</term>
<term>Modèle itinérant</term>
<term>Spectrométrie photoélectron</term>
<term>Photoémission inverse</term>
<term>Niveau coeur</term>
<term>Etat multiplet</term>
<term>Effet Fano</term>
<term>Délocalisation électronique</term>
<term>Couche mince</term>
<term>Terbium</term>
<term>Thulium</term>
<term>Etude expérimentale</term>
<term>7320A</term>
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<front><div type="abstract" xml:lang="en">Recent experimental results concerning the surface-related electronic structure of rare-earth solids are presented. Special attention is paid to the occurrence of surface-valence transitions in trivalent or mixed-valent compounds of Sm, Eu, Tm, and Yb that are due to energetically lowering of unoccupied 4f-states caused by the reduced atomic coordination at the surface. Similar phenomena are encountered in Ce-systems leading to a decrease of 4f-hybridization in the outermost atomic surface layer. The importance of this phenomenon for the correct interpretation of electron-spectroscopic data of Ce-systems is discussed. Experimental evidence for transitions from a localized to an itinerant behavior of the 4f-states is obtained for CeRh<sub>3</sub>
.</div>
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<fA14 i1="01"><s1>Institut für Oberflächenphysik und Mikrostrukturphysik, TU Dresden</s1>
<s2>01062 Dresden</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
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<fC01 i1="01" l="ENG"><s0>Recent experimental results concerning the surface-related electronic structure of rare-earth solids are presented. Special attention is paid to the occurrence of surface-valence transitions in trivalent or mixed-valent compounds of Sm, Eu, Tm, and Yb that are due to energetically lowering of unoccupied 4f-states caused by the reduced atomic coordination at the surface. Similar phenomena are encountered in Ce-systems leading to a decrease of 4f-hybridization in the outermost atomic surface layer. The importance of this phenomenon for the correct interpretation of electron-spectroscopic data of Ce-systems is discussed. Experimental evidence for transitions from a localized to an itinerant behavior of the 4f-states is obtained for CeRh<sub>3</sub>
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<s5>01</s5>
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<fC03 i1="01" i2="X" l="ENG"><s0>Surface electron state</s0>
<s5>01</s5>
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<fC03 i1="01" i2="X" l="SPA"><s0>Estado electrónico superficie</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Structure électronique</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Electronic structure</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Hybridation</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Hybridization</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Valence</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Valence</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Composé valence mixte</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Mixed-valence compounds</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Modèle itinérant</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Itinerant model</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Modelo itinerante</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Spectrométrie photoélectron</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Photoelectron spectroscopy</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Photoémission inverse</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Inverse photoemission</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Fotoemisión inversa</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Niveau coeur</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Core levels</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Etat multiplet</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Multiplet state</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Estado multiplete</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Effet Fano</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Fano effect</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Efecto Fano</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Délocalisation électronique</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Electron delocalization</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Deslocalización electrónica</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Couche mince</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Thin films</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Terbium</s0>
<s2>NC</s2>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Terbium</s0>
<s2>NC</s2>
<s5>14</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Thulium</s0>
<s2>NC</s2>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Thulium</s0>
<s2>NC</s2>
<s5>15</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Etude expérimentale</s0>
<s5>18</s5>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Experimental study</s0>
<s5>18</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>7320A</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>56</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>7960D</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>57</s5>
</fC03>
<fC07 i1="01" i2="3" l="FRE"><s0>Lanthanide</s0>
<s2>NC</s2>
<s5>16</s5>
</fC07>
<fC07 i1="01" i2="3" l="ENG"><s0>Rare earths</s0>
<s2>NC</s2>
<s5>16</s5>
</fC07>
<fC07 i1="02" i2="3" l="FRE"><s0>Lanthanide alliage</s0>
<s5>17</s5>
</fC07>
<fC07 i1="02" i2="3" l="ENG"><s0>Rare earth alloys</s0>
<s5>17</s5>
</fC07>
<fN21><s1>026</s1>
</fN21>
</pA>
<pR><fA30 i1="01" i2="1" l="GER"><s1>DPG-Frühjahrstagung</s1>
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<s4>1997</s4>
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<server><NO>PASCAL 98-0046699 INIST</NO>
<ET>Electron properties and surface effects of rare-earth systems</ET>
<AU>LAUBSCHAT (C.)</AU>
<AF>Institut für Oberflächenphysik und Mikrostrukturphysik, TU Dresden/01062 Dresden/Allemagne (1 aut.)</AF>
<DT>Publication en série; Congrès; Niveau analytique</DT>
<SO>Applied physics. A, Materials science & processing; Allemagne; Da. 1997; Vol. 65; No. 6; Pp. 573-579; Bibl. 33 ref.</SO>
<LA>Anglais</LA>
<EA>Recent experimental results concerning the surface-related electronic structure of rare-earth solids are presented. Special attention is paid to the occurrence of surface-valence transitions in trivalent or mixed-valent compounds of Sm, Eu, Tm, and Yb that are due to energetically lowering of unoccupied 4f-states caused by the reduced atomic coordination at the surface. Similar phenomena are encountered in Ce-systems leading to a decrease of 4f-hybridization in the outermost atomic surface layer. The importance of this phenomenon for the correct interpretation of electron-spectroscopic data of Ce-systems is discussed. Experimental evidence for transitions from a localized to an itinerant behavior of the 4f-states is obtained for CeRh<sub>3</sub>
.</EA>
<CC>001B70C20A; 001B70I60D; 240</CC>
<FD>Etat électronique surface; Structure électronique; Hybridation; Valence; Composé valence mixte; Modèle itinérant; Spectrométrie photoélectron; Photoémission inverse; Niveau coeur; Etat multiplet; Effet Fano; Délocalisation électronique; Couche mince; Terbium; Thulium; Etude expérimentale; 7320A; 7960D</FD>
<FG>Lanthanide; Lanthanide alliage</FG>
<ED>Surface electron state; Electronic structure; Hybridization; Valence; Mixed-valence compounds; Itinerant model; Photoelectron spectroscopy; Inverse photoemission; Core levels; Multiplet state; Fano effect; Electron delocalization; Thin films; Terbium; Thulium; Experimental study</ED>
<EG>Rare earths; Rare earth alloys</EG>
<SD>Estado electrónico superficie; Modelo itinerante; Fotoemisión inversa; Estado multiplete; Efecto Fano; Deslocalización electrónica</SD>
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