The temperature dependence of energy transfer between the Tm 3F4 and Ho 5I7 manifolds of Tm-sensitized Ho luminescence in YAG and YLF
Identifieur interne : 000F70 ( Pascal/Corpus ); précédent : 000F69; suivant : 000F71The temperature dependence of energy transfer between the Tm 3F4 and Ho 5I7 manifolds of Tm-sensitized Ho luminescence in YAG and YLF
Auteurs : B. M. Walsh ; N. P. Barnes ; B. Di BartoloSource :
- Journal of luminescence [ 0022-2313 ] ; 2000.
Descripteurs français
- Pascal (Inist)
English descriptors
- KwdEn :
Abstract
The temperature dependence of the energy transfer process between the Tm 3F4 and Ho 5I7 manifolds in Tm:Ho doped laser materials is investigated. Decay data of luminescence in Tm: Ho: YAG and Tm: Ho: YLF in the temperature range 243-323 K are analyzed to extract energy transfer rates and elucidate the theoretical description of the energy distribution between Tm and Ho ions in solid host materials.
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NO : | PASCAL 00-0283289 INIST |
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ET : | The temperature dependence of energy transfer between the Tm 3F4 and Ho 5I7 manifolds of Tm-sensitized Ho luminescence in YAG and YLF |
AU : | WALSH (B. M.); BARNES (N. P.); DI BARTOLO (B.) |
AF : | Department of Physics, Boston College/Chestnut Hill, MA 02167/Etats-Unis (1 aut., 3 aut.); NASA Langley Research Center/Hampton, VA 23681/Etats-Unis (2 aut.) |
DT : | Publication en série; Niveau analytique |
SO : | Journal of luminescence; ISSN 0022-2313; Coden JLUMA8; Pays-Bas; Da. 2000; Vol. 90; No. 1-2; Pp. 39-48; Bibl. 15 ref. |
LA : | Anglais |
EA : | The temperature dependence of the energy transfer process between the Tm 3F4 and Ho 5I7 manifolds in Tm:Ho doped laser materials is investigated. Decay data of luminescence in Tm: Ho: YAG and Tm: Ho: YLF in the temperature range 243-323 K are analyzed to extract energy transfer rates and elucidate the theoretical description of the energy distribution between Tm and Ho ions in solid host materials. |
CC : | 001B70H55H; 001B40B70H |
FD : | Etude expérimentale; Photoluminescence; Déclin luminescence; Transfert énergie; Dépendance température; Distribution énergie; Matériau laser; Matériau dopé; Addition thulium; Addition holmium; Grenats; 7855H; 4270H |
FG : | Composé minéral; Métal transition composé |
ED : | Experimental study; Photoluminescence; Luminescence decay; Energy transfer; Temperature dependence; Energy distribution; Laser materials; Doped materials; Thulium additions; Holmium additions; Garnets |
EG : | Inorganic compounds; Transition element compounds |
SD : | Decadencia luminiscencia; Distribución energía |
LO : | INIST-14666.354000088545160060 |
ID : | 00-0283289 |
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Pascal:00-0283289Le document en format XML
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F<sub>4</sub>
and Ho <sup>5</sup>
I<sub>7</sub>
manifolds of Tm-sensitized Ho luminescence in YAG and YLF</title>
<author><name sortKey="Walsh, B M" sort="Walsh, B M" uniqKey="Walsh B" first="B. M." last="Walsh">B. M. Walsh</name>
<affiliation><inist:fA14 i1="01"><s1>Department of Physics, Boston College</s1>
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<author><name sortKey="Barnes, N P" sort="Barnes, N P" uniqKey="Barnes N" first="N. P." last="Barnes">N. P. Barnes</name>
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<author><name sortKey="Di Bartolo, B" sort="Di Bartolo, B" uniqKey="Di Bartolo B" first="B." last="Di Bartolo">B. Di Bartolo</name>
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F<sub>4</sub>
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I<sub>7</sub>
manifolds of Tm-sensitized Ho luminescence in YAG and YLF</title>
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<term>Matériau dopé</term>
<term>Addition thulium</term>
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<front><div type="abstract" xml:lang="en">The temperature dependence of the energy transfer process between the Tm <sup>3</sup>
F<sub>4</sub>
and Ho <sup>5</sup>
I<sub>7</sub>
manifolds in Tm:Ho doped laser materials is investigated. Decay data of luminescence in Tm: Ho: YAG and Tm: Ho: YLF in the temperature range 243-323 K are analyzed to extract energy transfer rates and elucidate the theoretical description of the energy distribution between Tm and Ho ions in solid host materials.</div>
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manifolds of Tm-sensitized Ho luminescence in YAG and YLF</s1>
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F<sub>4</sub>
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I<sub>7</sub>
manifolds in Tm:Ho doped laser materials is investigated. Decay data of luminescence in Tm: Ho: YAG and Tm: Ho: YLF in the temperature range 243-323 K are analyzed to extract energy transfer rates and elucidate the theoretical description of the energy distribution between Tm and Ho ions in solid host materials.</s0>
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<server><NO>PASCAL 00-0283289 INIST</NO>
<ET>The temperature dependence of energy transfer between the Tm <sup>3</sup>
F<sub>4</sub>
and Ho <sup>5</sup>
I<sub>7</sub>
manifolds of Tm-sensitized Ho luminescence in YAG and YLF</ET>
<AU>WALSH (B. M.); BARNES (N. P.); DI BARTOLO (B.)</AU>
<AF>Department of Physics, Boston College/Chestnut Hill, MA 02167/Etats-Unis (1 aut., 3 aut.); NASA Langley Research Center/Hampton, VA 23681/Etats-Unis (2 aut.)</AF>
<DT>Publication en série; Niveau analytique</DT>
<SO>Journal of luminescence; ISSN 0022-2313; Coden JLUMA8; Pays-Bas; Da. 2000; Vol. 90; No. 1-2; Pp. 39-48; Bibl. 15 ref.</SO>
<LA>Anglais</LA>
<EA>The temperature dependence of the energy transfer process between the Tm <sup>3</sup>
F<sub>4</sub>
and Ho <sup>5</sup>
I<sub>7</sub>
manifolds in Tm:Ho doped laser materials is investigated. Decay data of luminescence in Tm: Ho: YAG and Tm: Ho: YLF in the temperature range 243-323 K are analyzed to extract energy transfer rates and elucidate the theoretical description of the energy distribution between Tm and Ho ions in solid host materials.</EA>
<CC>001B70H55H; 001B40B70H</CC>
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<FG>Composé minéral; Métal transition composé</FG>
<ED>Experimental study; Photoluminescence; Luminescence decay; Energy transfer; Temperature dependence; Energy distribution; Laser materials; Doped materials; Thulium additions; Holmium additions; Garnets</ED>
<EG>Inorganic compounds; Transition element compounds</EG>
<SD>Decadencia luminiscencia; Distribución energía</SD>
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