ThuliumV1, Pascal, Corpus, bibRecord, 000F49

Trapping processes in CaS:Eu2+,Tm3+

Identifieur interne : 000F49 ( Pascal/Corpus ); précédent : 000F48; suivant : 000F50

Trapping processes in CaS:Eu2+,Tm3+

Auteurs : Dongdong Jia ; Weiyi Jia ; D. R. Evans ; W. M. Dennis ; Huimin Liu ; Jing Zhu ; W. M. Yen

Source :

Journal of applied physics [ 0021-8979 ] ; 2000-09-15.

RBID : Pascal:00-0376753

Descripteurs français

Pascal (Inist)
- 7220J, 8105D, 7155G, 7860K, Etude expérimentale, Calcium sulfure, Thermoluminescence, Europium ion, Thulium ion, Matériau luminescent, Electron piégé, Défaut, Calcium composé, Europium, Thulium, Piège trou, Piège électron, Traitement thermique, Niveau énergie profond, Etat défaut, Semiconducteur II-VI.

English descriptors

KwdEn :
- Calcium compounds, Calcium sulfides, Deep energy levels, Defect states, Defects, Electron traps, Europium, Europium ions, Experimental study, Heat treatments, Hole traps, II-VI semiconductors, Phosphors, Thermoluminescence, Thulium, Thulium ions, Trapped electrons.

Abstract

CaS:Eu²⁺,Tm³⁺ is a persistent red phosphor. Thermoluminescence was measured under different excitation and thermal treatment conditions. The results reveal that the charge defects, created by substituting Tm³⁺ for Ca²⁺, serve as hole traps for the afterglow at room temperature. Tm³⁺ plays the role of deep electron trapping centers, capturing electrons either through the conduction band or directly from the excited Eu²⁺ ions. These two processes, in which two different sites of Tm³⁺ are involved, correspond to two traps with different depths. © 2000 American Institute of Physics.

Notice en format standard (ISO 2709)

Pour connaître la documentation sur le format Inist Standard.

A01	`01`	`1`		`@0 0021-8979`
A02	`01`			`@0 JAPIAU`
A03		`1`		`@0 J. appl. phys.`
A05				`@2 88`
A06				`@2 6`
A08	`01`	`1`	`ENG`	`@1 Trapping processes in CaS:Eu²⁺,Tm³⁺`
A11	`01`	`1`		`@1 JIA (Dongdong)`
A11	`02`	`1`		`@1 JIA (Weiyi)`
A11	`03`	`1`		`@1 EVANS (D. R.)`
A11	`04`	`1`		`@1 DENNIS (W. M.)`
A11	`05`	`1`		`@1 LIU (Huimin)`
A11	`06`	`1`		`@1 ZHU (Jing)`
A11	`07`	`1`		`@1 YEN (W. M.)`
A14	`01`			`@1 Department of Materials Science and Engineering, Tsinghua University, Beijing, China @Z 1 aut. @Z 2 aut. @Z 5 aut. @Z 6 aut. @Z 7 aut.`
A14	`02`			`@1 Department of Physics, University of Puerto Rico, Mayaguez, Puerto Rico 00681`
A14	`03`			`@1 Department of Physics and Astronomy, University of Georgia, Athens, Georgia 30602 @Z 3 aut. @Z 4 aut.`
A14	`04`			`@1 Department of Physics, University of Puerto Rico, Mayaguez, Puerto Rico 00681`
A14	`05`			`@1 Department of Materials Science and Engineering, Tsinghua University, Beijing, China`
A14	`06`			`@1 Department of Physics and Astronomy, University of Georgia, Athens, Georgia 30602`
A20				`@1 3402-3407`
A21				`@1 2000-09-15`
A23	`01`			`@0 ENG`
A43	`01`			`@1 INIST @2 126`
A44				`@0 8100 @1 © 2000 American Institute of Physics. All rights reserved.`
A47	`01`	`1`		`@0 00-0376753`
A60				`@1 P`
A61				`@0 A`
A64	`01`	`1`		`@0 Journal of applied physics`
A66	`01`			`@0 USA`
C01	`01`		`ENG`	@0 CaS:Eu²⁺,Tm³⁺ is a persistent red phosphor. Thermoluminescence was measured under different excitation and thermal treatment conditions. The results reveal that the charge defects, created by substituting Tm³⁺ for Ca²⁺, serve as hole traps for the afterglow at room temperature. Tm³⁺ plays the role of deep electron trapping centers, capturing electrons either through the conduction band or directly from the excited Eu²⁺ ions. These two processes, in which two different sites of Tm³⁺ are involved, correspond to two traps with different depths. © 2000 American Institute of Physics.
C02	`01`	`3`		`@0 001B70B20J`
C02	`02`	`3`		`@0 001B80A05H`
C02	`03`	`3`		`@0 001B70A55G`
C02	`04`	`3`		`@0 001B70H60K`
C03	`01`	`3`	`FRE`	`@0 7220J @2 PAC @4 INC`
C03	`02`	`3`	`FRE`	`@0 8105D @2 PAC @4 INC`
C03	`03`	`3`	`FRE`	`@0 7155G @2 PAC @4 INC`
C03	`04`	`3`	`FRE`	`@0 7860K @2 PAC @4 INC`
C03	`05`	`3`	`FRE`	`@0 Etude expérimentale`
C03	`05`	`3`	`ENG`	`@0 Experimental study`
C03	`06`	`3`	`FRE`	`@0 Calcium sulfure @2 NK`
C03	`06`	`3`	`ENG`	`@0 Calcium sulfides @2 NK`
C03	`07`	`3`	`FRE`	`@0 Thermoluminescence`
C03	`07`	`3`	`ENG`	`@0 Thermoluminescence`
C03	`08`	`3`	`FRE`	`@0 Europium ion @2 NC`
C03	`08`	`3`	`ENG`	`@0 Europium ions @2 NC`
C03	`09`	`3`	`FRE`	`@0 Thulium ion @2 NC`
C03	`09`	`3`	`ENG`	`@0 Thulium ions @2 NC`
C03	`10`	`3`	`FRE`	`@0 Matériau luminescent`
C03	`10`	`3`	`ENG`	`@0 Phosphors`
C03	`11`	`3`	`FRE`	`@0 Electron piégé`
C03	`11`	`3`	`ENG`	`@0 Trapped electrons`
C03	`12`	`3`	`FRE`	`@0 Défaut`
C03	`12`	`3`	`ENG`	`@0 Defects`
C03	`13`	`3`	`FRE`	`@0 Calcium composé`
C03	`13`	`3`	`ENG`	`@0 Calcium compounds`
C03	`14`	`3`	`FRE`	`@0 Europium @2 NC`
C03	`14`	`3`	`ENG`	`@0 Europium @2 NC`
C03	`15`	`3`	`FRE`	`@0 Thulium @2 NC`
C03	`15`	`3`	`ENG`	`@0 Thulium @2 NC`
C03	`16`	`3`	`FRE`	`@0 Piège trou`
C03	`16`	`3`	`ENG`	`@0 Hole traps`
C03	`17`	`3`	`FRE`	`@0 Piège électron`
C03	`17`	`3`	`ENG`	`@0 Electron traps`
C03	`18`	`3`	`FRE`	`@0 Traitement thermique`
C03	`18`	`3`	`ENG`	`@0 Heat treatments`
C03	`19`	`3`	`FRE`	`@0 Niveau énergie profond`
C03	`19`	`3`	`ENG`	`@0 Deep energy levels`
C03	`20`	`3`	`FRE`	`@0 Etat défaut`
C03	`20`	`3`	`ENG`	`@0 Defect states`
C03	`21`	`3`	`FRE`	`@0 Semiconducteur II-VI`
C03	`21`	`3`	`ENG`	`@0 II-VI semiconductors`
N21				`@1 255`
N47	`01`	`1`		`@0 0036M000333`

Format Inist (serveur)

NO :	PASCAL 00-0376753 AIP
ET :	Trapping processes in CaS:Eu²⁺,Tm³⁺
AU :	JIA (Dongdong); JIA (Weiyi); EVANS (D. R.); DENNIS (W. M.); LIU (Huimin); ZHU (Jing); YEN (W. M.)
AF :	Department of Materials Science and Engineering, Tsinghua University, Beijing, China (1 aut., 2 aut., 5 aut., 6 aut., 7 aut.); Department of Physics, University of Puerto Rico, Mayaguez, Puerto Rico 00681; Department of Physics and Astronomy, University of Georgia, Athens, Georgia 30602 (3 aut., 4 aut.); Department of Physics, University of Puerto Rico, Mayaguez, Puerto Rico 00681; Department of Materials Science and Engineering, Tsinghua University, Beijing, China; Department of Physics and Astronomy, University of Georgia, Athens, Georgia 30602
DT :	Publication en série; Niveau analytique
SO :	Journal of applied physics; ISSN 0021-8979; Coden JAPIAU; Etats-Unis; Da. 2000-09-15; Vol. 88; No. 6; Pp. 3402-3407
LA :	Anglais
EA :	CaS:Eu²⁺,Tm³⁺ is a persistent red phosphor. Thermoluminescence was measured under different excitation and thermal treatment conditions. The results reveal that the charge defects, created by substituting Tm³⁺ for Ca²⁺, serve as hole traps for the afterglow at room temperature. Tm³⁺ plays the role of deep electron trapping centers, capturing electrons either through the conduction band or directly from the excited Eu²⁺ ions. These two processes, in which two different sites of Tm³⁺ are involved, correspond to two traps with different depths. © 2000 American Institute of Physics.
CC :	001B70B20J; 001B80A05H; 001B70A55G; 001B70H60K
FD :	7220J; 8105D; 7155G; 7860K; Etude expérimentale; Calcium sulfure; Thermoluminescence; Europium ion; Thulium ion; Matériau luminescent; Electron piégé; Défaut; Calcium composé; Europium; Thulium; Piège trou; Piège électron; Traitement thermique; Niveau énergie profond; Etat défaut; Semiconducteur II-VI
ED :	Experimental study; Calcium sulfides; Thermoluminescence; Europium ions; Thulium ions; Phosphors; Trapped electrons; Defects; Calcium compounds; Europium; Thulium; Hole traps; Electron traps; Heat treatments; Deep energy levels; Defect states; II-VI semiconductors
LO :	INIST-126
ID :	00-0376753

Links to Exploration step

Pascal:00-0376753

Le document en format XML

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<sourceDesc><biblStruct><analytic><title xml:lang="en" level="a">Trapping processes in CaS:Eu<sup>2+</sup>
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<affiliation><inist:fA14 i1="05"><s1>Department of Materials Science and Engineering, Tsinghua University, Beijing, China</s1>
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<front><div type="abstract" xml:lang="en">CaS:Eu<sup>2+</sup>
,Tm<sup>3+</sup>
 is a persistent red phosphor. Thermoluminescence was measured under different excitation and thermal treatment conditions. The results reveal that the charge defects, created by substituting Tm<sup>3+</sup>
 for Ca<sup>2+</sup>
, serve as hole traps for the afterglow at room temperature. Tm<sup>3+</sup>
 plays the role of deep electron trapping centers, capturing electrons either through the conduction band or directly from the excited Eu<sup>2+</sup>
 ions. These two processes, in which two different sites of Tm<sup>3+</sup>
 are involved, correspond to two traps with different depths. © 2000 American Institute of Physics.</div>
</front>
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<fA14 i1="01"><s1>Department of Materials Science and Engineering, Tsinghua University, Beijing, China</s1>
<sZ>1 aut.</sZ>
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<fA14 i1="02"><s1>Department of Physics, University of Puerto Rico, Mayaguez, Puerto Rico 00681</s1>
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<fA14 i1="03"><s1>Department of Physics and Astronomy, University of Georgia, Athens, Georgia 30602</s1>
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<fA14 i1="04"><s1>Department of Physics, University of Puerto Rico, Mayaguez, Puerto Rico 00681</s1>
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<fA14 i1="05"><s1>Department of Materials Science and Engineering, Tsinghua University, Beijing, China</s1>
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<fA14 i1="06"><s1>Department of Physics and Astronomy, University of Georgia, Athens, Georgia 30602</s1>
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<fC01 i1="01" l="ENG"><s0>CaS:Eu<sup>2+</sup>
,Tm<sup>3+</sup>
 is a persistent red phosphor. Thermoluminescence was measured under different excitation and thermal treatment conditions. The results reveal that the charge defects, created by substituting Tm<sup>3+</sup>
 for Ca<sup>2+</sup>
, serve as hole traps for the afterglow at room temperature. Tm<sup>3+</sup>
 plays the role of deep electron trapping centers, capturing electrons either through the conduction band or directly from the excited Eu<sup>2+</sup>
 ions. These two processes, in which two different sites of Tm<sup>3+</sup>
 are involved, correspond to two traps with different depths. © 2000 American Institute of Physics.</s0>
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</fC02>
<fC02 i1="04" i2="3"><s0>001B70H60K</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>7220J</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>8105D</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>7155G</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>7860K</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Etude expérimentale</s0>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Experimental study</s0>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Calcium sulfure</s0>
<s2>NK</s2>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Calcium sulfides</s0>
<s2>NK</s2>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Thermoluminescence</s0>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Thermoluminescence</s0>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Europium ion</s0>
<s2>NC</s2>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Europium ions</s0>
<s2>NC</s2>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Thulium ion</s0>
<s2>NC</s2>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Thulium ions</s0>
<s2>NC</s2>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Matériau luminescent</s0>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Phosphors</s0>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Electron piégé</s0>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Trapped electrons</s0>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Défaut</s0>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Defects</s0>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Calcium composé</s0>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Calcium compounds</s0>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Europium</s0>
<s2>NC</s2>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Europium</s0>
<s2>NC</s2>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Thulium</s0>
<s2>NC</s2>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Thulium</s0>
<s2>NC</s2>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Piège trou</s0>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Hole traps</s0>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Piège électron</s0>
</fC03>
<fC03 i1="17" i2="3" l="ENG"><s0>Electron traps</s0>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>Traitement thermique</s0>
</fC03>
<fC03 i1="18" i2="3" l="ENG"><s0>Heat treatments</s0>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>Niveau énergie profond</s0>
</fC03>
<fC03 i1="19" i2="3" l="ENG"><s0>Deep energy levels</s0>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>Etat défaut</s0>
</fC03>
<fC03 i1="20" i2="3" l="ENG"><s0>Defect states</s0>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>Semiconducteur II-VI</s0>
</fC03>
<fC03 i1="21" i2="3" l="ENG"><s0>II-VI semiconductors</s0>
</fC03>
<fN21><s1>255</s1>
</fN21>
<fN47 i1="01" i2="1"><s0>0036M000333</s0>
</fN47>
</pA>
</standard>
<server><NO>PASCAL 00-0376753 AIP</NO>
<ET>Trapping processes in CaS:Eu<sup>2+</sup>
,Tm<sup>3+</sup>
</ET>
<AU>JIA (Dongdong); JIA (Weiyi); EVANS (D. R.); DENNIS (W. M.); LIU (Huimin); ZHU (Jing); YEN (W. M.)</AU>
<AF>Department of Materials Science and Engineering, Tsinghua University, Beijing, China (1 aut., 2 aut., 5 aut., 6 aut., 7 aut.); Department of Physics, University of Puerto Rico, Mayaguez, Puerto Rico 00681; Department of Physics and Astronomy, University of Georgia, Athens, Georgia 30602 (3 aut., 4 aut.); Department of Physics, University of Puerto Rico, Mayaguez, Puerto Rico 00681; Department of Materials Science and Engineering, Tsinghua University, Beijing, China; Department of Physics and Astronomy, University of Georgia, Athens, Georgia 30602</AF>
<DT>Publication en série; Niveau analytique</DT>
<SO>Journal of applied physics; ISSN 0021-8979; Coden JAPIAU; Etats-Unis; Da. 2000-09-15; Vol. 88; No. 6; Pp. 3402-3407</SO>
<LA>Anglais</LA>
<EA>CaS:Eu<sup>2+</sup>
,Tm<sup>3+</sup>
 is a persistent red phosphor. Thermoluminescence was measured under different excitation and thermal treatment conditions. The results reveal that the charge defects, created by substituting Tm<sup>3+</sup>
 for Ca<sup>2+</sup>
, serve as hole traps for the afterglow at room temperature. Tm<sup>3+</sup>
 plays the role of deep electron trapping centers, capturing electrons either through the conduction band or directly from the excited Eu<sup>2+</sup>
 ions. These two processes, in which two different sites of Tm<sup>3+</sup>
 are involved, correspond to two traps with different depths. © 2000 American Institute of Physics.</EA>
<CC>001B70B20J; 001B80A05H; 001B70A55G; 001B70H60K</CC>
<FD>7220J; 8105D; 7155G; 7860K; Etude expérimentale; Calcium sulfure; Thermoluminescence; Europium ion; Thulium ion; Matériau luminescent; Electron piégé; Défaut; Calcium composé; Europium; Thulium; Piège trou; Piège électron; Traitement thermique; Niveau énergie profond; Etat défaut; Semiconducteur II-VI</FD>
<ED>Experimental study; Calcium sulfides; Thermoluminescence; Europium ions; Thulium ions; Phosphors; Trapped electrons; Defects; Calcium compounds; Europium; Thulium; Hole traps; Electron traps; Heat treatments; Deep energy levels; Defect states; II-VI semiconductors</ED>
<LO>INIST-126</LO>
<ID>00-0376753</ID>
</server>
</inist>
</record>

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Trapping processes in CaS:Eu2+,Tm3+

Trapping processes in CaS:Eu2+,Tm3+

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