ThuliumV1, Pascal, Corpus, bibRecord, 000B77

X-ray microanalysis of optical materials for 157nm photolithography

Identifieur interne : 000B77 ( Pascal/Corpus ); précédent : 000B76; suivant : 000B78

X-ray microanalysis of optical materials for 157nm photolithography

Auteurs : G. Drazic ; E. Sarantopoulou ; S. Kobe ; Z. Kollia ; A. C. Cefalas

Source :

Crystal engineering [ 1463-0184 ] ; 2002.

RBID : Pascal:03-0193404

Descripteurs français

Pascal (Inist)
- Etude expérimentale, Fabrication microélectronique, Photolithographie, Rayonnement UV extrême, Matériau optique, Pureté optique, Monocristal, Calcium fluorure, Potassium fluorure, Yttrium fluorure, Dopage, Addition praséodyme, Addition thulium, Haute pureté, Concentration impureté, Distribution concentration, Méthode mesure, Spectrométrie RX, Ca F, 8540H, 4270, 6172S, Dispersion énergie, Microanalyse, KY3F10:Pr, CaF2:Tm, F K Y.

English descriptors

KwdEn :
- Calcium fluoride, Concentration distribution, Doping, Energy dispersion, Experimental study, High purity, Impurity density, Measurement method, Microanalysis, Microelectronic fabrication, Optical material, Optical purity, Photolithography, Potassium fluoride, Praseodymium addition, Single crystal, Thulium addition, Vacuum ultraviolet radiation, X ray spectrometry, Yttrium fluoride.

Abstract

Next generation microelectronic circuits will have minimum dimensions below 100 nm. It is envisioned that 157 nm laser lithography will be the next step of optical lithography, A.C. Cefalas, E. Sarantopoulou, Microelectronic Engineering V53 (2000) 465, followed by lithographies at shorter wavelengths e.g. 13 nm. At 157 nn vacuum ultraviolet (VUV) illumination of the mask target lithographic features with dimensions less than 100 nm on the photoresist could be achieved. However, there are problems related with the design of the optical projection system. This is mainly because most of the optical materials in one hand have high absorption coefficient and their optical properties degrade constantly with time under VUV irradiation. Taking into consideration the imaging requirements for this type of application, the refractive index variation over the illuminated volume of the optical material should be better than 10^-6, and hence optical elements should be prepared from ultra high purity materials. Crystals have been examined with the Jeol 2010 F microscope equipped by the energy dispersive X-ray spectroscopy (EDXS), and it has been proved to be an efficient quality control technique for identifying defects and impurities in crystal samples. A non-uniform distribution of concentration of various elements in wide band gap dielectric crystals in confined space regions from 2 to 50 nm was found, and this result sets the limitations in the optical quality of the crystals.

Notice en format standard (ISO 2709)

Pour connaître la documentation sur le format Inist Standard.

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Format Inist (serveur)

NO :	PASCAL 03-0193404 INIST
ET :	X-ray microanalysis of optical materials for 157nm photolithography
AU :	DRAZIC (G.); SARANTOPOULOU (E.); KOBE (S.); KOLLIA (Z.); CEFALAS (A. C.); MAJEWSKI (P.); FUERTES (A.); CLOOTS (R.)
AF :	Jozef Stefan Institute, Jamova 39/1000 Ljubljana/Slovénie (1 aut., 3 aut.); Theoretical and Physical Chemistry Institute, National Hellenic Research Foundation, TPCI, 48 Vassileos Constantinou Avenue/Athens 11635/Grèce (2 aut., 4 aut., 5 aut.); MPI/Stuttgart/Allemagne (1 aut.); Inst. de Ciència de Material de Barcelona/Barcelona/Espagne (2 aut.); University of Liège/Liège/Belgique (3 aut.)
DT :	Publication en série; Congrès; Niveau analytique
SO :	Crystal engineering; ISSN 1463-0184; Royaume-Uni; Da. 2002; Vol. 5; No. 3-4; Pp. 327-334; Bibl. 8 ref.
LA :	Anglais
EA :	Next generation microelectronic circuits will have minimum dimensions below 100 nm. It is envisioned that 157 nm laser lithography will be the next step of optical lithography, A.C. Cefalas, E. Sarantopoulou, Microelectronic Engineering V53 (2000) 465, followed by lithographies at shorter wavelengths e.g. 13 nm. At 157 nn vacuum ultraviolet (VUV) illumination of the mask target lithographic features with dimensions less than 100 nm on the photoresist could be achieved. However, there are problems related with the design of the optical projection system. This is mainly because most of the optical materials in one hand have high absorption coefficient and their optical properties degrade constantly with time under VUV irradiation. Taking into consideration the imaging requirements for this type of application, the refractive index variation over the illuminated volume of the optical material should be better than 10^-6, and hence optical elements should be prepared from ultra high purity materials. Crystals have been examined with the Jeol 2010 F microscope equipped by the energy dispersive X-ray spectroscopy (EDXS), and it has been proved to be an efficient quality control technique for identifying defects and impurities in crystal samples. A non-uniform distribution of concentration of various elements in wide band gap dielectric crystals in confined space regions from 2 to 50 nm was found, and this result sets the limitations in the optical quality of the crystals.
CC :	001D03F17; 001B40B70; 001B60A72S
FD :	Etude expérimentale; Fabrication microélectronique; Photolithographie; Rayonnement UV extrême; Matériau optique; Pureté optique; Monocristal; Calcium fluorure; Potassium fluorure; Yttrium fluorure; Dopage; Addition praséodyme; Addition thulium; Haute pureté; Concentration impureté; Distribution concentration; Méthode mesure; Spectrométrie RX; Ca F; 8540H; 4270; 6172S; Dispersion énergie; Microanalyse; KY3F10:Pr; CaF2:Tm; F K Y
FG :	Composé minéral; Métal transition composé
ED :	Experimental study; Microelectronic fabrication; Photolithography; Vacuum ultraviolet radiation; Optical material; Optical purity; Single crystal; Calcium fluoride; Potassium fluoride; Yttrium fluoride; Doping; Praseodymium addition; Thulium addition; High purity; Impurity density; Concentration distribution; Measurement method; X ray spectrometry; Energy dispersion; Microanalysis
EG :	Inorganic compound; Transition metal compounds
SD :	Estudio experimental; Fabricación microeléctrica; Fotolitografía; Radiación ultravioleta extrema; Material óptico; Pureza óptica; Monocristal; Calcio fluoruro; Potasio fluoruro; Ytrio fluoruro; Doping; Adición praseodimio; Adición tulio; Gran pureza; Concentración impureza; Distribución concentración; Método medida; Espectrometría RX; Dispersión energía; Microanálisis
LO :	INIST-13343S.354000110742270220
ID :	03-0193404

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Pascal:03-0193404

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<front><div type="abstract" xml:lang="en">Next generation microelectronic circuits will have minimum dimensions below 100 nm. It is envisioned that 157 nm laser lithography will be the next step of optical lithography, A.C. Cefalas, E. Sarantopoulou, Microelectronic Engineering V53 (2000) 465, followed by lithographies at shorter wavelengths e.g. 13 nm. At 157 nn vacuum ultraviolet (VUV) illumination of the mask target lithographic features with dimensions less than 100 nm on the photoresist could be achieved. However, there are problems related with the design of the optical projection system. This is mainly because most of the optical materials in one hand have high absorption coefficient and their optical properties degrade constantly with time under VUV irradiation. Taking into consideration the imaging requirements for this type of application, the refractive index variation over the illuminated volume of the optical material should be better than 10<sup>-6</sup>
, and hence optical elements should be prepared from ultra high purity materials. Crystals have been examined with the Jeol 2010 F microscope equipped by the energy dispersive X-ray spectroscopy (EDXS), and it has been proved to be an efficient quality control technique for identifying defects and impurities in crystal samples. A non-uniform distribution of concentration of various elements in wide band gap dielectric crystals in confined space regions from 2 to 50 nm was found, and this result sets the limitations in the optical quality of the crystals.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1463-0184</s0>
</fA01>
<fA03 i2="1"><s0>Cryst. eng.</s0>
</fA03>
<fA05><s2>5</s2>
</fA05>
<fA06><s2>3-4</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>X-ray microanalysis of optical materials for 157nm photolithography</s1>
</fA08>
<fA09 i1="01" i2="1" l="ENG"><s1>Crystal Chemistry of Functional Materials II. Proceedings of Symposium L, E-MRS Spring Meeting, June 18-21, 2002</s1>
</fA09>
<fA11 i1="01" i2="1"><s1>DRAZIC (G.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>SARANTOPOULOU (E.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>KOBE (S.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>KOLLIA (Z.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>CEFALAS (A. C.)</s1>
</fA11>
<fA12 i1="01" i2="1"><s1>MAJEWSKI (P.)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="02" i2="1"><s1>FUERTES (A.)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="03" i2="1"><s1>CLOOTS (R.)</s1>
<s9>ed.</s9>
</fA12>
<fA14 i1="01"><s1>Jozef Stefan Institute, Jamova 39</s1>
<s2>1000 Ljubljana</s2>
<s3>SVN</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Theoretical and Physical Chemistry Institute, National Hellenic Research Foundation, TPCI, 48 Vassileos Constantinou Avenue</s1>
<s2>Athens 11635</s2>
<s3>GRC</s3>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</fA14>
<fA15 i1="01"><s1>MPI</s1>
<s2>Stuttgart</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
</fA15>
<fA15 i1="02"><s1>Inst. de Ciència de Material de Barcelona</s1>
<s2>Barcelona</s2>
<s3>ESP</s3>
<sZ>2 aut.</sZ>
</fA15>
<fA15 i1="03"><s1>University of Liège</s1>
<s2>Liège</s2>
<s3>BEL</s3>
<sZ>3 aut.</sZ>
</fA15>
<fA18 i1="01" i2="1"><s1>European Materials Research Society (E-MRS)</s1>
<s2>Strasbourg</s2>
<s3>FRA</s3>
<s9>patr.</s9>
</fA18>
<fA20><s1>327-334</s1>
</fA20>
<fA21><s1>2002</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>13343S</s2>
<s5>354000110742270220</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2003 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>8 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>03-0193404</s0>
</fA47>
<fA60><s1>P</s1>
<s2>C</s2>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Crystal engineering</s0>
</fA64>
<fA66 i1="01"><s0>GBR</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Next generation microelectronic circuits will have minimum dimensions below 100 nm. It is envisioned that 157 nm laser lithography will be the next step of optical lithography, A.C. Cefalas, E. Sarantopoulou, Microelectronic Engineering V53 (2000) 465, followed by lithographies at shorter wavelengths e.g. 13 nm. At 157 nn vacuum ultraviolet (VUV) illumination of the mask target lithographic features with dimensions less than 100 nm on the photoresist could be achieved. However, there are problems related with the design of the optical projection system. This is mainly because most of the optical materials in one hand have high absorption coefficient and their optical properties degrade constantly with time under VUV irradiation. Taking into consideration the imaging requirements for this type of application, the refractive index variation over the illuminated volume of the optical material should be better than 10<sup>-6</sup>
, and hence optical elements should be prepared from ultra high purity materials. Crystals have been examined with the Jeol 2010 F microscope equipped by the energy dispersive X-ray spectroscopy (EDXS), and it has been proved to be an efficient quality control technique for identifying defects and impurities in crystal samples. A non-uniform distribution of concentration of various elements in wide band gap dielectric crystals in confined space regions from 2 to 50 nm was found, and this result sets the limitations in the optical quality of the crystals.</s0>
</fC01>
<fC02 i1="01" i2="X"><s0>001D03F17</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B40B70</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B60A72S</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE"><s0>Etude expérimentale</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>Experimental study</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA"><s0>Estudio experimental</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Fabrication microélectronique</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>Microelectronic fabrication</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Fabricación microeléctrica</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Photolithographie</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Photolithography</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Fotolitografía</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Rayonnement UV extrême</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Vacuum ultraviolet radiation</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Radiación ultravioleta extrema</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Matériau optique</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Optical material</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Material óptico</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Pureté optique</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Optical purity</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Pureza óptica</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="X" l="FRE"><s0>Monocristal</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG"><s0>Single crystal</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA"><s0>Monocristal</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Calcium fluorure</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Calcium fluoride</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Calcio fluoruro</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Potassium fluorure</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>Potassium fluoride</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Potasio fluoruro</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Yttrium fluorure</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Yttrium fluoride</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Ytrio fluoruro</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Dopage</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Doping</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Doping</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Addition praséodyme</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Praseodymium addition</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Adición praseodimio</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Addition thulium</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>Thulium addition</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="X" l="SPA"><s0>Adición tulio</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Haute pureté</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>High purity</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Gran pureza</s0>
<s5>14</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>Concentration impureté</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="ENG"><s0>Impurity density</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA"><s0>Concentración impureza</s0>
<s5>15</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>Distribution concentration</s0>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="X" l="ENG"><s0>Concentration distribution</s0>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="X" l="SPA"><s0>Distribución concentración</s0>
<s5>16</s5>
</fC03>
<fC03 i1="17" i2="X" l="FRE"><s0>Méthode mesure</s0>
<s5>17</s5>
</fC03>
<fC03 i1="17" i2="X" l="ENG"><s0>Measurement method</s0>
<s5>17</s5>
</fC03>
<fC03 i1="17" i2="X" l="SPA"><s0>Método medida</s0>
<s5>17</s5>
</fC03>
<fC03 i1="18" i2="X" l="FRE"><s0>Spectrométrie RX</s0>
<s5>18</s5>
</fC03>
<fC03 i1="18" i2="X" l="ENG"><s0>X ray spectrometry</s0>
<s5>18</s5>
</fC03>
<fC03 i1="18" i2="X" l="SPA"><s0>Espectrometría RX</s0>
<s5>18</s5>
</fC03>
<fC03 i1="19" i2="X" l="FRE"><s0>Ca F</s0>
<s4>INC</s4>
<s5>52</s5>
</fC03>
<fC03 i1="20" i2="X" l="FRE"><s0>8540H</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>56</s5>
</fC03>
<fC03 i1="21" i2="X" l="FRE"><s0>4270</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>57</s5>
</fC03>
<fC03 i1="22" i2="X" l="FRE"><s0>6172S</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>58</s5>
</fC03>
<fC03 i1="23" i2="X" l="FRE"><s0>Dispersion énergie</s0>
<s5>81</s5>
</fC03>
<fC03 i1="23" i2="X" l="ENG"><s0>Energy dispersion</s0>
<s5>81</s5>
</fC03>
<fC03 i1="23" i2="X" l="SPA"><s0>Dispersión energía</s0>
<s5>81</s5>
</fC03>
<fC03 i1="24" i2="X" l="FRE"><s0>Microanalyse</s0>
<s5>84</s5>
</fC03>
<fC03 i1="24" i2="X" l="ENG"><s0>Microanalysis</s0>
<s5>84</s5>
</fC03>
<fC03 i1="24" i2="X" l="SPA"><s0>Microanálisis</s0>
<s5>84</s5>
</fC03>
<fC03 i1="25" i2="X" l="FRE"><s0>KY3F10:Pr</s0>
<s4>INC</s4>
<s5>92</s5>
</fC03>
<fC03 i1="26" i2="X" l="FRE"><s0>CaF2:Tm</s0>
<s4>INC</s4>
<s5>94</s5>
</fC03>
<fC03 i1="27" i2="X" l="FRE"><s0>F K Y</s0>
<s4>INC</s4>
<s5>95</s5>
</fC03>
<fC07 i1="01" i2="X" l="FRE"><s0>Composé minéral</s0>
<s5>82</s5>
</fC07>
<fC07 i1="01" i2="X" l="ENG"><s0>Inorganic compound</s0>
<s5>82</s5>
</fC07>
<fC07 i1="01" i2="X" l="SPA"><s0>Compuesto inorgánico</s0>
<s5>82</s5>
</fC07>
<fC07 i1="02" i2="1" l="FRE"><s0>Métal transition composé</s0>
<s5>83</s5>
</fC07>
<fC07 i1="02" i2="1" l="ENG"><s0>Transition metal compounds</s0>
<s5>83</s5>
</fC07>
<fN21><s1>111</s1>
</fN21>
<fN82><s1>PSI</s1>
</fN82>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>E-MRS Spring Meeting, Symposium L: Crystal Chemistry of Functional Materials II</s1>
<s3>Strasbourg FRA</s3>
<s4>2002-06-18</s4>
</fA30>
</pR>
</standard>
<server><NO>PASCAL 03-0193404 INIST</NO>
<ET>X-ray microanalysis of optical materials for 157nm photolithography</ET>
<AU>DRAZIC (G.); SARANTOPOULOU (E.); KOBE (S.); KOLLIA (Z.); CEFALAS (A. C.); MAJEWSKI (P.); FUERTES (A.); CLOOTS (R.)</AU>
<AF>Jozef Stefan Institute, Jamova 39/1000 Ljubljana/Slovénie (1 aut., 3 aut.); Theoretical and Physical Chemistry Institute, National Hellenic Research Foundation, TPCI, 48 Vassileos Constantinou Avenue/Athens 11635/Grèce (2 aut., 4 aut., 5 aut.); MPI/Stuttgart/Allemagne (1 aut.); Inst. de Ciència de Material de Barcelona/Barcelona/Espagne (2 aut.); University of Liège/Liège/Belgique (3 aut.)</AF>
<DT>Publication en série; Congrès; Niveau analytique</DT>
<SO>Crystal engineering; ISSN 1463-0184; Royaume-Uni; Da. 2002; Vol. 5; No. 3-4; Pp. 327-334; Bibl. 8 ref.</SO>
<LA>Anglais</LA>
<EA>Next generation microelectronic circuits will have minimum dimensions below 100 nm. It is envisioned that 157 nm laser lithography will be the next step of optical lithography, A.C. Cefalas, E. Sarantopoulou, Microelectronic Engineering V53 (2000) 465, followed by lithographies at shorter wavelengths e.g. 13 nm. At 157 nn vacuum ultraviolet (VUV) illumination of the mask target lithographic features with dimensions less than 100 nm on the photoresist could be achieved. However, there are problems related with the design of the optical projection system. This is mainly because most of the optical materials in one hand have high absorption coefficient and their optical properties degrade constantly with time under VUV irradiation. Taking into consideration the imaging requirements for this type of application, the refractive index variation over the illuminated volume of the optical material should be better than 10<sup>-6</sup>
, and hence optical elements should be prepared from ultra high purity materials. Crystals have been examined with the Jeol 2010 F microscope equipped by the energy dispersive X-ray spectroscopy (EDXS), and it has been proved to be an efficient quality control technique for identifying defects and impurities in crystal samples. A non-uniform distribution of concentration of various elements in wide band gap dielectric crystals in confined space regions from 2 to 50 nm was found, and this result sets the limitations in the optical quality of the crystals.</EA>
<CC>001D03F17; 001B40B70; 001B60A72S</CC>
<FD>Etude expérimentale; Fabrication microélectronique; Photolithographie; Rayonnement UV extrême; Matériau optique; Pureté optique; Monocristal; Calcium fluorure; Potassium fluorure; Yttrium fluorure; Dopage; Addition praséodyme; Addition thulium; Haute pureté; Concentration impureté; Distribution concentration; Méthode mesure; Spectrométrie RX; Ca F; 8540H; 4270; 6172S; Dispersion énergie; Microanalyse; KY3F10:Pr; CaF2:Tm; F K Y</FD>
<FG>Composé minéral; Métal transition composé</FG>
<ED>Experimental study; Microelectronic fabrication; Photolithography; Vacuum ultraviolet radiation; Optical material; Optical purity; Single crystal; Calcium fluoride; Potassium fluoride; Yttrium fluoride; Doping; Praseodymium addition; Thulium addition; High purity; Impurity density; Concentration distribution; Measurement method; X ray spectrometry; Energy dispersion; Microanalysis</ED>
<EG>Inorganic compound; Transition metal compounds</EG>
<SD>Estudio experimental; Fabricación microeléctrica; Fotolitografía; Radiación ultravioleta extrema; Material óptico; Pureza óptica; Monocristal; Calcio fluoruro; Potasio fluoruro; Ytrio fluoruro; Doping; Adición praseodimio; Adición tulio; Gran pureza; Concentración impureza; Distribución concentración; Método medida; Espectrometría RX; Dispersión energía; Microanálisis</SD>
<LO>INIST-13343S.354000110742270220</LO>
<ID>03-0193404</ID>
</server>
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X-ray microanalysis of optical materials for 157nm photolithography

X-ray microanalysis of optical materials for 157nm photolithography

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