CW laser operation of KLu0,945Tm0,055(WO4)2-KLu(WO4)2 epilayers near 2 μm
Identifieur interne : 000785 ( Pascal/Corpus ); précédent : 000784; suivant : 000786CW laser operation of KLu0,945Tm0,055(WO4)2-KLu(WO4)2 epilayers near 2 μm
Auteurs : Oscar Silvestre ; Maria Cinta Pujol ; Magdalena Aguilo ; Francesc Diaz ; Xavier Mateos ; Valentin Petrov ; Uwe GriebnerSource :
- IEEE journal of quantum electronics [ 0018-9197 ] ; 2007.
Descripteurs français
- Pascal (Inist)
English descriptors
- KwdEn :
Abstract
Thin epilayers of monoclinic KLu(WO4)2 doped with thulium are grown by liquid phase epitaxy on undoped KLU(WO4)2 substrates. The epitaxial composites are optically characterized and implemented in a cavity, longitudinally pumped (normal to the layer) by a Ti:sapphire laser. Tunable (1894-2039 nm) continuous-wave laser operation is achieved with maximum slope efficiency as high as 64% with respect to the absorbed pump power at 802 nm. The output power is limited by the crystal absorption.
Notice en format standard (ISO 2709)
Pour connaître la documentation sur le format Inist Standard.
pA |
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Format Inist (serveur)
NO : | PASCAL 07-0195470 INIST |
---|---|
ET : | CW laser operation of KLu0,945Tm0,055(WO4)2-KLu(WO4)2 epilayers near 2 μm |
AU : | SILVESTRE (Oscar); PUJOL (Maria Cinta); AGUILO (Magdalena); DIAZ (Francesc); MATEOS (Xavier); PETROV (Valentin); GRIEBNER (Uwe) |
AF : | Group of Fisica i Cristal-lografia de Materials (FiCMA), Universitat Rovira i Virgili/43007 Tarragona/Espagne (1 aut., 2 aut., 3 aut., 4 aut.); Max-Bom-Institute for Nonlinear Optics and Ultrafast Spectroscopy/12489 Berlin/Allemagne (5 aut., 6 aut., 7 aut.) |
DT : | Publication en série; Correspondance, lettre; Niveau analytique |
SO : | IEEE journal of quantum electronics; ISSN 0018-9197; Coden IEJQA7; Etats-Unis; Da. 2007; Vol. 43; No. 3-4; Pp. 257-260; Bibl. 11 ref. |
LA : | Anglais |
EA : | Thin epilayers of monoclinic KLu(WO4)2 doped with thulium are grown by liquid phase epitaxy on undoped KLU(WO4)2 substrates. The epitaxial composites are optically characterized and implemented in a cavity, longitudinally pumped (normal to the layer) by a Ti:sapphire laser. Tunable (1894-2039 nm) continuous-wave laser operation is achieved with maximum slope efficiency as high as 64% with respect to the absorbed pump power at 802 nm. The output power is limited by the crystal absorption. |
CC : | 001B40B70H; 001B40B60P; 001B40B55R |
FD : | Laser continu; Laser solide; Laser accordable; Epitaxie phase liquide; Puissance sortie; Matériau optique; Matériau dopé; Matériau laser; Lutétium tungstate; Lanthanide composé; Addition thulium; Potassium tungstate; Composé quaternaire; KLu(WO4)2:Tl; 4270H; 4260P; 4255R |
ED : | CW lasers; Solid state lasers; Tunable lasers; LPE; Output power; Optical materials; Doped materials; Laser materials; Lutetium tungstates; Rare earth compounds; Thulium additions; Potassium tungstates; Quaternary compounds |
SD : | Potencia salida |
LO : | INIST-222K.354000145709400070 |
ID : | 07-0195470 |
Links to Exploration step
Pascal:07-0195470Le document en format XML
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Tm<sub>0,055</sub>
(WO<sub>4</sub>
)2-KLu(WO<sub>4</sub>
)<sub>2</sub>
epilayers near 2 μm</title>
<author><name sortKey="Silvestre, Oscar" sort="Silvestre, Oscar" uniqKey="Silvestre O" first="Oscar" last="Silvestre">Oscar Silvestre</name>
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<sourceDesc><biblStruct><analytic><title xml:lang="en" level="a">CW laser operation of KLu<sub>0,945</sub>
Tm<sub>0,055</sub>
(WO<sub>4</sub>
)2-KLu(WO<sub>4</sub>
)<sub>2</sub>
epilayers near 2 μm</title>
<author><name sortKey="Silvestre, Oscar" sort="Silvestre, Oscar" uniqKey="Silvestre O" first="Oscar" last="Silvestre">Oscar Silvestre</name>
<affiliation><inist:fA14 i1="01"><s1>Group of Fisica i Cristal-lografia de Materials (FiCMA), Universitat Rovira i Virgili</s1>
<s2>43007 Tarragona</s2>
<s3>ESP</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
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<author><name sortKey="Pujol, Maria Cinta" sort="Pujol, Maria Cinta" uniqKey="Pujol M" first="Maria Cinta" last="Pujol">Maria Cinta Pujol</name>
<affiliation><inist:fA14 i1="01"><s1>Group of Fisica i Cristal-lografia de Materials (FiCMA), Universitat Rovira i Virgili</s1>
<s2>43007 Tarragona</s2>
<s3>ESP</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
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<author><name sortKey="Aguilo, Magdalena" sort="Aguilo, Magdalena" uniqKey="Aguilo M" first="Magdalena" last="Aguilo">Magdalena Aguilo</name>
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<s2>43007 Tarragona</s2>
<s3>ESP</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
</affiliation>
</author>
<author><name sortKey="Diaz, Francesc" sort="Diaz, Francesc" uniqKey="Diaz F" first="Francesc" last="Diaz">Francesc Diaz</name>
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<s2>43007 Tarragona</s2>
<s3>ESP</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
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<author><name sortKey="Mateos, Xavier" sort="Mateos, Xavier" uniqKey="Mateos X" first="Xavier" last="Mateos">Xavier Mateos</name>
<affiliation><inist:fA14 i1="02"><s1>Max-Bom-Institute for Nonlinear Optics and Ultrafast Spectroscopy</s1>
<s2>12489 Berlin</s2>
<s3>DEU</s3>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
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<s3>DEU</s3>
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<sZ>6 aut.</sZ>
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<author><name sortKey="Griebner, Uwe" sort="Griebner, Uwe" uniqKey="Griebner U" first="Uwe" last="Griebner">Uwe Griebner</name>
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<s2>12489 Berlin</s2>
<s3>DEU</s3>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
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<series><title level="j" type="main">IEEE journal of quantum electronics</title>
<title level="j" type="abbreviated">IEEE j. quantum electron.</title>
<idno type="ISSN">0018-9197</idno>
<imprint><date when="2007">2007</date>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>CW lasers</term>
<term>Doped materials</term>
<term>LPE</term>
<term>Laser materials</term>
<term>Lutetium tungstates</term>
<term>Optical materials</term>
<term>Output power</term>
<term>Potassium tungstates</term>
<term>Quaternary compounds</term>
<term>Rare earth compounds</term>
<term>Solid state lasers</term>
<term>Thulium additions</term>
<term>Tunable lasers</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Laser continu</term>
<term>Laser solide</term>
<term>Laser accordable</term>
<term>Epitaxie phase liquide</term>
<term>Puissance sortie</term>
<term>Matériau optique</term>
<term>Matériau dopé</term>
<term>Matériau laser</term>
<term>Lutétium tungstate</term>
<term>Lanthanide composé</term>
<term>Addition thulium</term>
<term>Potassium tungstate</term>
<term>Composé quaternaire</term>
<term>KLu(WO4)2:Tl</term>
<term>4270H</term>
<term>4260P</term>
<term>4255R</term>
</keywords>
</textClass>
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<front><div type="abstract" xml:lang="en">Thin epilayers of monoclinic KLu(WO<sub>4</sub>
)<sub>2</sub>
doped with thulium are grown by liquid phase epitaxy on undoped KLU(WO<sub>4</sub>
)<sub>2</sub>
substrates. The epitaxial composites are optically characterized and implemented in a cavity, longitudinally pumped (normal to the layer) by a Ti:sapphire laser. Tunable (1894-2039 nm) continuous-wave laser operation is achieved with maximum slope efficiency as high as 64% with respect to the absorbed pump power at 802 nm. The output power is limited by the crystal absorption.</div>
</front>
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</fA05>
<fA06><s2>3-4</s2>
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<fA08 i1="01" i2="1" l="ENG"><s1>CW laser operation of KLu<sub>0,945</sub>
Tm<sub>0,055</sub>
(WO<sub>4</sub>
)2-KLu(WO<sub>4</sub>
)<sub>2</sub>
epilayers near 2 μm</s1>
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<fA11 i1="01" i2="1"><s1>SILVESTRE (Oscar)</s1>
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<fA11 i1="02" i2="1"><s1>PUJOL (Maria Cinta)</s1>
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<fA11 i1="03" i2="1"><s1>AGUILO (Magdalena)</s1>
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<fA11 i1="04" i2="1"><s1>DIAZ (Francesc)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>MATEOS (Xavier)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>PETROV (Valentin)</s1>
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<fA11 i1="07" i2="1"><s1>GRIEBNER (Uwe)</s1>
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<fA14 i1="01"><s1>Group of Fisica i Cristal-lografia de Materials (FiCMA), Universitat Rovira i Virgili</s1>
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<s3>ESP</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
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<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
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<fA20><s1>257-260</s1>
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<fA60><s1>P</s1>
<s3>CR</s3>
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</fA64>
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</fA66>
<fC01 i1="01" l="ENG"><s0>Thin epilayers of monoclinic KLu(WO<sub>4</sub>
)<sub>2</sub>
doped with thulium are grown by liquid phase epitaxy on undoped KLU(WO<sub>4</sub>
)<sub>2</sub>
substrates. The epitaxial composites are optically characterized and implemented in a cavity, longitudinally pumped (normal to the layer) by a Ti:sapphire laser. Tunable (1894-2039 nm) continuous-wave laser operation is achieved with maximum slope efficiency as high as 64% with respect to the absorbed pump power at 802 nm. The output power is limited by the crystal absorption.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B40B70H</s0>
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<fC02 i1="02" i2="3"><s0>001B40B60P</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B40B55R</s0>
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<fC03 i1="01" i2="3" l="FRE"><s0>Laser continu</s0>
<s5>11</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>CW lasers</s0>
<s5>11</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Laser solide</s0>
<s5>12</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Solid state lasers</s0>
<s5>12</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Laser accordable</s0>
<s5>13</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Tunable lasers</s0>
<s5>13</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Epitaxie phase liquide</s0>
<s5>30</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>LPE</s0>
<s5>30</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Puissance sortie</s0>
<s5>41</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Output power</s0>
<s5>41</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Potencia salida</s0>
<s5>41</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Matériau optique</s0>
<s5>50</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Optical materials</s0>
<s5>50</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Matériau dopé</s0>
<s5>51</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Doped materials</s0>
<s5>51</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Matériau laser</s0>
<s5>57</s5>
</fC03>
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<s5>57</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Lutétium tungstate</s0>
<s2>NK</s2>
<s5>58</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Lutetium tungstates</s0>
<s2>NK</s2>
<s5>58</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Lanthanide composé</s0>
<s5>62</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Rare earth compounds</s0>
<s5>62</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Addition thulium</s0>
<s5>63</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Thulium additions</s0>
<s5>63</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Potassium tungstate</s0>
<s2>NK</s2>
<s5>64</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Potassium tungstates</s0>
<s2>NK</s2>
<s5>64</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Composé quaternaire</s0>
<s5>65</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Quaternary compounds</s0>
<s5>65</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>KLu(WO4)2:Tl</s0>
<s4>INC</s4>
<s5>84</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>4270H</s0>
<s4>INC</s4>
<s5>91</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>4260P</s0>
<s4>INC</s4>
<s5>92</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>4255R</s0>
<s4>INC</s4>
<s5>93</s5>
</fC03>
<fN21><s1>128</s1>
</fN21>
</pA>
</standard>
<server><NO>PASCAL 07-0195470 INIST</NO>
<ET>CW laser operation of KLu<sub>0,945</sub>
Tm<sub>0,055</sub>
(WO<sub>4</sub>
)2-KLu(WO<sub>4</sub>
)<sub>2</sub>
epilayers near 2 μm</ET>
<AU>SILVESTRE (Oscar); PUJOL (Maria Cinta); AGUILO (Magdalena); DIAZ (Francesc); MATEOS (Xavier); PETROV (Valentin); GRIEBNER (Uwe)</AU>
<AF>Group of Fisica i Cristal-lografia de Materials (FiCMA), Universitat Rovira i Virgili/43007 Tarragona/Espagne (1 aut., 2 aut., 3 aut., 4 aut.); Max-Bom-Institute for Nonlinear Optics and Ultrafast Spectroscopy/12489 Berlin/Allemagne (5 aut., 6 aut., 7 aut.)</AF>
<DT>Publication en série; Correspondance, lettre; Niveau analytique</DT>
<SO>IEEE journal of quantum electronics; ISSN 0018-9197; Coden IEJQA7; Etats-Unis; Da. 2007; Vol. 43; No. 3-4; Pp. 257-260; Bibl. 11 ref.</SO>
<LA>Anglais</LA>
<EA>Thin epilayers of monoclinic KLu(WO<sub>4</sub>
)<sub>2</sub>
doped with thulium are grown by liquid phase epitaxy on undoped KLU(WO<sub>4</sub>
)<sub>2</sub>
substrates. The epitaxial composites are optically characterized and implemented in a cavity, longitudinally pumped (normal to the layer) by a Ti:sapphire laser. Tunable (1894-2039 nm) continuous-wave laser operation is achieved with maximum slope efficiency as high as 64% with respect to the absorbed pump power at 802 nm. The output power is limited by the crystal absorption.</EA>
<CC>001B40B70H; 001B40B60P; 001B40B55R</CC>
<FD>Laser continu; Laser solide; Laser accordable; Epitaxie phase liquide; Puissance sortie; Matériau optique; Matériau dopé; Matériau laser; Lutétium tungstate; Lanthanide composé; Addition thulium; Potassium tungstate; Composé quaternaire; KLu(WO4)2:Tl; 4270H; 4260P; 4255R</FD>
<ED>CW lasers; Solid state lasers; Tunable lasers; LPE; Output power; Optical materials; Doped materials; Laser materials; Lutetium tungstates; Rare earth compounds; Thulium additions; Potassium tungstates; Quaternary compounds</ED>
<SD>Potencia salida</SD>
<LO>INIST-222K.354000145709400070</LO>
<ID>07-0195470</ID>
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