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Spectroscopic properties of Tm3+ ions in chalcogenide Ge-As-S glass containing minute amount of Ga and CsBr

Identifieur interne : 000622 ( Pascal/Corpus ); précédent : 000621; suivant : 000623

Spectroscopic properties of Tm3+ ions in chalcogenide Ge-As-S glass containing minute amount of Ga and CsBr

Auteurs : YONG GYU CHOI ; JAY HYOK SONG

Source :

RBID : Pascal:08-0382974

Descripteurs français

English descriptors

Abstract

We have experimentally confirmed that the absorption and emission properties for intra-4f-configurational transitions of Tm3+ ions doped in Ge-As-S glass, one of representative chalcogenide glasses, are modified dramatically upon the introduction of minute amount of Ga and CsBr, tantamount to a low doping level. This compositional adjustment makes local chemical environments of Tm3+ being rearranged spontaneously without any further thermal treatment applied. The hypersensitive 3H63F4 transition, in particular, turns out to reflect the modified chemical environments more significantly than other transitions. Redistribution of the stark levels of 3F4 manifold is mainly responsible for the significant changes in emission spectra for 3H4 → 3F4 and 3F4 → 3H6 transitions. Since the addition of small amount of the group III elements and alkali halides alters only the optical properties of rare-earth ions, while keeping thermal stability of the chalcogenide glass hosts unchanged, our compositional adjustment method would be quite useful for practical applications of rare-earth activated chalcogenide glasses.

Notice en format standard (ISO 2709)

Pour connaître la documentation sur le format Inist Standard.

pA  
A01 01  1    @0 0030-4018
A02 01      @0 OPCOB8
A03   1    @0 Opt. commun.
A05       @2 281
A06       @2 17
A08 01  1  ENG  @1 Spectroscopic properties of Tm3+ ions in chalcogenide Ge-As-S glass containing minute amount of Ga and CsBr
A11 01  1    @1 YONG GYU CHOI
A11 02  1    @1 JAY HYOK SONG
A14 01      @1 Department of Materials Science and Engineering, Korea Aerospace University @2 Goyang, Gyeonggi 412-791 @3 KOR @Z 1 aut.
A14 02      @1 Material Laboratory, Corporate R&D Centre, Samsung SDI @2 Yongin, Gyeonggi 446-577 @3 KOR @Z 2 aut.
A20       @1 4358-4362
A21       @1 2008
A23 01      @0 ENG
A43 01      @1 INIST @2 14750 @5 354000196419930310
A44       @0 0000 @1 © 2008 INIST-CNRS. All rights reserved.
A45       @0 25 ref.
A47 01  1    @0 08-0382974
A60       @1 P
A61       @0 A
A64 01  1    @0 Optics communications
A66 01      @0 NLD
C01 01    ENG  @0 We have experimentally confirmed that the absorption and emission properties for intra-4f-configurational transitions of Tm3+ ions doped in Ge-As-S glass, one of representative chalcogenide glasses, are modified dramatically upon the introduction of minute amount of Ga and CsBr, tantamount to a low doping level. This compositional adjustment makes local chemical environments of Tm3+ being rearranged spontaneously without any further thermal treatment applied. The hypersensitive 3H63F4 transition, in particular, turns out to reflect the modified chemical environments more significantly than other transitions. Redistribution of the stark levels of 3F4 manifold is mainly responsible for the significant changes in emission spectra for 3H4 → 3F4 and 3F4 → 3H6 transitions. Since the addition of small amount of the group III elements and alkali halides alters only the optical properties of rare-earth ions, while keeping thermal stability of the chalcogenide glass hosts unchanged, our compositional adjustment method would be quite useful for practical applications of rare-earth activated chalcogenide glasses.
C02 01  3    @0 001B40B70C
C02 02  3    @0 001B70H55Q
C02 03  3    @0 001B80A40T
C03 01  3  FRE  @0 Effet Stark @5 03
C03 01  3  ENG  @0 Stark effect @5 03
C03 02  3  FRE  @0 Luminescence @5 04
C03 02  3  ENG  @0 Luminescence @5 04
C03 03  X  FRE  @0 Traitement matériau @5 05
C03 03  X  ENG  @0 Material processing @5 05
C03 03  X  SPA  @0 Tratamiento material @5 05
C03 04  3  FRE  @0 Etude expérimentale @5 30
C03 04  3  ENG  @0 Experimental study @5 30
C03 05  3  FRE  @0 Spectre absorption @5 41
C03 05  3  ENG  @0 Absorption spectra @5 41
C03 06  3  FRE  @0 Spectre émission @5 42
C03 06  3  ENG  @0 Emission spectra @5 42
C03 07  3  FRE  @0 Propriété optique @5 43
C03 07  3  ENG  @0 Optical properties @5 43
C03 08  3  FRE  @0 Matériau dopé @5 50
C03 08  3  ENG  @0 Doped materials @5 50
C03 09  3  FRE  @0 Matériau optique @5 57
C03 09  3  ENG  @0 Optical materials @5 57
C03 10  3  FRE  @0 Addition lanthanide @5 58
C03 10  3  ENG  @0 Rare earth additions @5 58
C03 11  3  FRE  @0 Chalcogénure @2 NA @5 61
C03 11  3  ENG  @0 Chalcogenides @2 NA @5 61
C03 12  3  FRE  @0 Verre chalcogénure @5 62
C03 12  3  ENG  @0 Chalcogenide glasses @5 62
C03 13  3  FRE  @0 Métal alcalin halogénure @5 63
C03 13  3  ENG  @0 Alkali metal halides @5 63
C03 14  X  FRE  @0 Ion lanthanide @5 64
C03 14  X  ENG  @0 Lanthanide ion @5 64
C03 14  X  SPA  @0 Lantánido ión @5 64
C03 15  3  FRE  @0 Lanthanide @2 NC @5 65
C03 15  3  ENG  @0 Rare earths @2 NC @5 65
C03 16  3  FRE  @0 Addition thulium @5 66
C03 16  3  ENG  @0 Thulium additions @5 66
C03 17  3  FRE  @0 Césium Bromure @2 NC @2 NA @5 67
C03 17  3  ENG  @0 Cesium Bromides @2 NC @2 NA @5 67
C03 18  3  FRE  @0 Transition niveau énergie @5 68
C03 18  3  ENG  @0 Energy-level transitions @5 68
C03 19  3  FRE  @0 4270C @4 INC @5 83
C03 20  3  FRE  @0 7855Q @4 INC @5 84
C03 21  3  FRE  @0 8140T @4 INC @5 85
C03 22  3  FRE  @0 As Ge S @4 INC @5 86
N21       @1 245

Format Inist (serveur)

NO : PASCAL 08-0382974 INIST
ET : Spectroscopic properties of Tm3+ ions in chalcogenide Ge-As-S glass containing minute amount of Ga and CsBr
AU : YONG GYU CHOI; JAY HYOK SONG
AF : Department of Materials Science and Engineering, Korea Aerospace University/Goyang, Gyeonggi 412-791/Corée, République de (1 aut.); Material Laboratory, Corporate R&D Centre, Samsung SDI/Yongin, Gyeonggi 446-577/Corée, République de (2 aut.)
DT : Publication en série; Niveau analytique
SO : Optics communications; ISSN 0030-4018; Coden OPCOB8; Pays-Bas; Da. 2008; Vol. 281; No. 17; Pp. 4358-4362; Bibl. 25 ref.
LA : Anglais
EA : We have experimentally confirmed that the absorption and emission properties for intra-4f-configurational transitions of Tm3+ ions doped in Ge-As-S glass, one of representative chalcogenide glasses, are modified dramatically upon the introduction of minute amount of Ga and CsBr, tantamount to a low doping level. This compositional adjustment makes local chemical environments of Tm3+ being rearranged spontaneously without any further thermal treatment applied. The hypersensitive 3H63F4 transition, in particular, turns out to reflect the modified chemical environments more significantly than other transitions. Redistribution of the stark levels of 3F4 manifold is mainly responsible for the significant changes in emission spectra for 3H4 → 3F4 and 3F4 → 3H6 transitions. Since the addition of small amount of the group III elements and alkali halides alters only the optical properties of rare-earth ions, while keeping thermal stability of the chalcogenide glass hosts unchanged, our compositional adjustment method would be quite useful for practical applications of rare-earth activated chalcogenide glasses.
CC : 001B40B70C; 001B70H55Q; 001B80A40T
FD : Effet Stark; Luminescence; Traitement matériau; Etude expérimentale; Spectre absorption; Spectre émission; Propriété optique; Matériau dopé; Matériau optique; Addition lanthanide; Chalcogénure; Verre chalcogénure; Métal alcalin halogénure; Ion lanthanide; Lanthanide; Addition thulium; Césium Bromure; Transition niveau énergie; 4270C; 7855Q; 8140T; As Ge S
ED : Stark effect; Luminescence; Material processing; Experimental study; Absorption spectra; Emission spectra; Optical properties; Doped materials; Optical materials; Rare earth additions; Chalcogenides; Chalcogenide glasses; Alkali metal halides; Lanthanide ion; Rare earths; Thulium additions; Cesium Bromides; Energy-level transitions
SD : Tratamiento material; Lantánido ión
LO : INIST-14750.354000196419930310
ID : 08-0382974

Links to Exploration step

Pascal:08-0382974

Le document en format XML

<record>
<TEI>
<teiHeader>
<fileDesc>
<titleStmt>
<title xml:lang="en" level="a">Spectroscopic properties of Tm
<sup>3+</sup>
ions in chalcogenide Ge-As-S glass containing minute amount of Ga and CsBr</title>
<author>
<name sortKey="Yong Gyu Choi" sort="Yong Gyu Choi" uniqKey="Yong Gyu Choi" last="Yong Gyu Choi">YONG GYU CHOI</name>
<affiliation>
<inist:fA14 i1="01">
<s1>Department of Materials Science and Engineering, Korea Aerospace University</s1>
<s2>Goyang, Gyeonggi 412-791</s2>
<s3>KOR</s3>
<sZ>1 aut.</sZ>
</inist:fA14>
</affiliation>
</author>
<author>
<name sortKey="Jay Hyok Song" sort="Jay Hyok Song" uniqKey="Jay Hyok Song" last="Jay Hyok Song">JAY HYOK SONG</name>
<affiliation>
<inist:fA14 i1="02">
<s1>Material Laboratory, Corporate R&D Centre, Samsung SDI</s1>
<s2>Yongin, Gyeonggi 446-577</s2>
<s3>KOR</s3>
<sZ>2 aut.</sZ>
</inist:fA14>
</affiliation>
</author>
</titleStmt>
<publicationStmt>
<idno type="wicri:source">INIST</idno>
<idno type="inist">08-0382974</idno>
<date when="2008">2008</date>
<idno type="stanalyst">PASCAL 08-0382974 INIST</idno>
<idno type="RBID">Pascal:08-0382974</idno>
<idno type="wicri:Area/Pascal/Corpus">000622</idno>
</publicationStmt>
<sourceDesc>
<biblStruct>
<analytic>
<title xml:lang="en" level="a">Spectroscopic properties of Tm
<sup>3+</sup>
ions in chalcogenide Ge-As-S glass containing minute amount of Ga and CsBr</title>
<author>
<name sortKey="Yong Gyu Choi" sort="Yong Gyu Choi" uniqKey="Yong Gyu Choi" last="Yong Gyu Choi">YONG GYU CHOI</name>
<affiliation>
<inist:fA14 i1="01">
<s1>Department of Materials Science and Engineering, Korea Aerospace University</s1>
<s2>Goyang, Gyeonggi 412-791</s2>
<s3>KOR</s3>
<sZ>1 aut.</sZ>
</inist:fA14>
</affiliation>
</author>
<author>
<name sortKey="Jay Hyok Song" sort="Jay Hyok Song" uniqKey="Jay Hyok Song" last="Jay Hyok Song">JAY HYOK SONG</name>
<affiliation>
<inist:fA14 i1="02">
<s1>Material Laboratory, Corporate R&D Centre, Samsung SDI</s1>
<s2>Yongin, Gyeonggi 446-577</s2>
<s3>KOR</s3>
<sZ>2 aut.</sZ>
</inist:fA14>
</affiliation>
</author>
</analytic>
<series>
<title level="j" type="main">Optics communications</title>
<title level="j" type="abbreviated">Opt. commun.</title>
<idno type="ISSN">0030-4018</idno>
<imprint>
<date when="2008">2008</date>
</imprint>
</series>
</biblStruct>
</sourceDesc>
<seriesStmt>
<title level="j" type="main">Optics communications</title>
<title level="j" type="abbreviated">Opt. commun.</title>
<idno type="ISSN">0030-4018</idno>
</seriesStmt>
</fileDesc>
<profileDesc>
<textClass>
<keywords scheme="KwdEn" xml:lang="en">
<term>Absorption spectra</term>
<term>Alkali metal halides</term>
<term>Cesium Bromides</term>
<term>Chalcogenide glasses</term>
<term>Chalcogenides</term>
<term>Doped materials</term>
<term>Emission spectra</term>
<term>Energy-level transitions</term>
<term>Experimental study</term>
<term>Lanthanide ion</term>
<term>Luminescence</term>
<term>Material processing</term>
<term>Optical materials</term>
<term>Optical properties</term>
<term>Rare earth additions</term>
<term>Rare earths</term>
<term>Stark effect</term>
<term>Thulium additions</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr">
<term>Effet Stark</term>
<term>Luminescence</term>
<term>Traitement matériau</term>
<term>Etude expérimentale</term>
<term>Spectre absorption</term>
<term>Spectre émission</term>
<term>Propriété optique</term>
<term>Matériau dopé</term>
<term>Matériau optique</term>
<term>Addition lanthanide</term>
<term>Chalcogénure</term>
<term>Verre chalcogénure</term>
<term>Métal alcalin halogénure</term>
<term>Ion lanthanide</term>
<term>Lanthanide</term>
<term>Addition thulium</term>
<term>Césium Bromure</term>
<term>Transition niveau énergie</term>
<term>4270C</term>
<term>7855Q</term>
<term>8140T</term>
<term>As Ge S</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front>
<div type="abstract" xml:lang="en">We have experimentally confirmed that the absorption and emission properties for intra-4f-configurational transitions of Tm
<sup>3+</sup>
ions doped in Ge-As-S glass, one of representative chalcogenide glasses, are modified dramatically upon the introduction of minute amount of Ga and CsBr, tantamount to a low doping level. This compositional adjustment makes local chemical environments of Tm
<sup>3+</sup>
being rearranged spontaneously without any further thermal treatment applied. The hypersensitive 3H
<sub>6</sub>
<sup>3</sup>
F
<sub>4</sub>
transition, in particular, turns out to reflect the modified chemical environments more significantly than other transitions. Redistribution of the stark levels of 3F
<sub>4</sub>
manifold is mainly responsible for the significant changes in emission spectra for
<sup>3</sup>
H
<sub>4</sub>
→ 3F
<sub>4</sub>
and
<sup>3</sup>
F
<sub>4</sub>
→ 3H
<sub>6</sub>
transitions. Since the addition of small amount of the group III elements and alkali halides alters only the optical properties of rare-earth ions, while keeping thermal stability of the chalcogenide glass hosts unchanged, our compositional adjustment method would be quite useful for practical applications of rare-earth activated chalcogenide glasses.</div>
</front>
</TEI>
<inist>
<standard h6="B">
<pA>
<fA01 i1="01" i2="1">
<s0>0030-4018</s0>
</fA01>
<fA02 i1="01">
<s0>OPCOB8</s0>
</fA02>
<fA03 i2="1">
<s0>Opt. commun.</s0>
</fA03>
<fA05>
<s2>281</s2>
</fA05>
<fA06>
<s2>17</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG">
<s1>Spectroscopic properties of Tm
<sup>3+</sup>
ions in chalcogenide Ge-As-S glass containing minute amount of Ga and CsBr</s1>
</fA08>
<fA11 i1="01" i2="1">
<s1>YONG GYU CHOI</s1>
</fA11>
<fA11 i1="02" i2="1">
<s1>JAY HYOK SONG</s1>
</fA11>
<fA14 i1="01">
<s1>Department of Materials Science and Engineering, Korea Aerospace University</s1>
<s2>Goyang, Gyeonggi 412-791</s2>
<s3>KOR</s3>
<sZ>1 aut.</sZ>
</fA14>
<fA14 i1="02">
<s1>Material Laboratory, Corporate R&D Centre, Samsung SDI</s1>
<s2>Yongin, Gyeonggi 446-577</s2>
<s3>KOR</s3>
<sZ>2 aut.</sZ>
</fA14>
<fA20>
<s1>4358-4362</s1>
</fA20>
<fA21>
<s1>2008</s1>
</fA21>
<fA23 i1="01">
<s0>ENG</s0>
</fA23>
<fA43 i1="01">
<s1>INIST</s1>
<s2>14750</s2>
<s5>354000196419930310</s5>
</fA43>
<fA44>
<s0>0000</s0>
<s1>© 2008 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45>
<s0>25 ref.</s0>
</fA45>
<fA47 i1="01" i2="1">
<s0>08-0382974</s0>
</fA47>
<fA60>
<s1>P</s1>
</fA60>
<fA61>
<s0>A</s0>
</fA61>
<fA64 i1="01" i2="1">
<s0>Optics communications</s0>
</fA64>
<fA66 i1="01">
<s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG">
<s0>We have experimentally confirmed that the absorption and emission properties for intra-4f-configurational transitions of Tm
<sup>3+</sup>
ions doped in Ge-As-S glass, one of representative chalcogenide glasses, are modified dramatically upon the introduction of minute amount of Ga and CsBr, tantamount to a low doping level. This compositional adjustment makes local chemical environments of Tm
<sup>3+</sup>
being rearranged spontaneously without any further thermal treatment applied. The hypersensitive 3H
<sub>6</sub>
<sup>3</sup>
F
<sub>4</sub>
transition, in particular, turns out to reflect the modified chemical environments more significantly than other transitions. Redistribution of the stark levels of 3F
<sub>4</sub>
manifold is mainly responsible for the significant changes in emission spectra for
<sup>3</sup>
H
<sub>4</sub>
→ 3F
<sub>4</sub>
and
<sup>3</sup>
F
<sub>4</sub>
→ 3H
<sub>6</sub>
transitions. Since the addition of small amount of the group III elements and alkali halides alters only the optical properties of rare-earth ions, while keeping thermal stability of the chalcogenide glass hosts unchanged, our compositional adjustment method would be quite useful for practical applications of rare-earth activated chalcogenide glasses.</s0>
</fC01>
<fC02 i1="01" i2="3">
<s0>001B40B70C</s0>
</fC02>
<fC02 i1="02" i2="3">
<s0>001B70H55Q</s0>
</fC02>
<fC02 i1="03" i2="3">
<s0>001B80A40T</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE">
<s0>Effet Stark</s0>
<s5>03</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG">
<s0>Stark effect</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE">
<s0>Luminescence</s0>
<s5>04</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG">
<s0>Luminescence</s0>
<s5>04</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE">
<s0>Traitement matériau</s0>
<s5>05</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG">
<s0>Material processing</s0>
<s5>05</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA">
<s0>Tratamiento material</s0>
<s5>05</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE">
<s0>Etude expérimentale</s0>
<s5>30</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG">
<s0>Experimental study</s0>
<s5>30</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE">
<s0>Spectre absorption</s0>
<s5>41</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG">
<s0>Absorption spectra</s0>
<s5>41</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE">
<s0>Spectre émission</s0>
<s5>42</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG">
<s0>Emission spectra</s0>
<s5>42</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE">
<s0>Propriété optique</s0>
<s5>43</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG">
<s0>Optical properties</s0>
<s5>43</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE">
<s0>Matériau dopé</s0>
<s5>50</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG">
<s0>Doped materials</s0>
<s5>50</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE">
<s0>Matériau optique</s0>
<s5>57</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG">
<s0>Optical materials</s0>
<s5>57</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE">
<s0>Addition lanthanide</s0>
<s5>58</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG">
<s0>Rare earth additions</s0>
<s5>58</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE">
<s0>Chalcogénure</s0>
<s2>NA</s2>
<s5>61</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG">
<s0>Chalcogenides</s0>
<s2>NA</s2>
<s5>61</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE">
<s0>Verre chalcogénure</s0>
<s5>62</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG">
<s0>Chalcogenide glasses</s0>
<s5>62</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE">
<s0>Métal alcalin halogénure</s0>
<s5>63</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG">
<s0>Alkali metal halides</s0>
<s5>63</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE">
<s0>Ion lanthanide</s0>
<s5>64</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG">
<s0>Lanthanide ion</s0>
<s5>64</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA">
<s0>Lantánido ión</s0>
<s5>64</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE">
<s0>Lanthanide</s0>
<s2>NC</s2>
<s5>65</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG">
<s0>Rare earths</s0>
<s2>NC</s2>
<s5>65</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE">
<s0>Addition thulium</s0>
<s5>66</s5>
</fC03>
<fC03 i1="16" i2="3" l="ENG">
<s0>Thulium additions</s0>
<s5>66</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE">
<s0>Césium Bromure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>67</s5>
</fC03>
<fC03 i1="17" i2="3" l="ENG">
<s0>Cesium Bromides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>67</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE">
<s0>Transition niveau énergie</s0>
<s5>68</s5>
</fC03>
<fC03 i1="18" i2="3" l="ENG">
<s0>Energy-level transitions</s0>
<s5>68</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE">
<s0>4270C</s0>
<s4>INC</s4>
<s5>83</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE">
<s0>7855Q</s0>
<s4>INC</s4>
<s5>84</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE">
<s0>8140T</s0>
<s4>INC</s4>
<s5>85</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE">
<s0>As Ge S</s0>
<s4>INC</s4>
<s5>86</s5>
</fC03>
<fN21>
<s1>245</s1>
</fN21>
</pA>
</standard>
<server>
<NO>PASCAL 08-0382974 INIST</NO>
<ET>Spectroscopic properties of Tm
<sup>3+</sup>
ions in chalcogenide Ge-As-S glass containing minute amount of Ga and CsBr</ET>
<AU>YONG GYU CHOI; JAY HYOK SONG</AU>
<AF>Department of Materials Science and Engineering, Korea Aerospace University/Goyang, Gyeonggi 412-791/Corée, République de (1 aut.); Material Laboratory, Corporate R&D Centre, Samsung SDI/Yongin, Gyeonggi 446-577/Corée, République de (2 aut.)</AF>
<DT>Publication en série; Niveau analytique</DT>
<SO>Optics communications; ISSN 0030-4018; Coden OPCOB8; Pays-Bas; Da. 2008; Vol. 281; No. 17; Pp. 4358-4362; Bibl. 25 ref.</SO>
<LA>Anglais</LA>
<EA>We have experimentally confirmed that the absorption and emission properties for intra-4f-configurational transitions of Tm
<sup>3+</sup>
ions doped in Ge-As-S glass, one of representative chalcogenide glasses, are modified dramatically upon the introduction of minute amount of Ga and CsBr, tantamount to a low doping level. This compositional adjustment makes local chemical environments of Tm
<sup>3+</sup>
being rearranged spontaneously without any further thermal treatment applied. The hypersensitive 3H
<sub>6</sub>
<sup>3</sup>
F
<sub>4</sub>
transition, in particular, turns out to reflect the modified chemical environments more significantly than other transitions. Redistribution of the stark levels of 3F
<sub>4</sub>
manifold is mainly responsible for the significant changes in emission spectra for
<sup>3</sup>
H
<sub>4</sub>
→ 3F
<sub>4</sub>
and
<sup>3</sup>
F
<sub>4</sub>
→ 3H
<sub>6</sub>
transitions. Since the addition of small amount of the group III elements and alkali halides alters only the optical properties of rare-earth ions, while keeping thermal stability of the chalcogenide glass hosts unchanged, our compositional adjustment method would be quite useful for practical applications of rare-earth activated chalcogenide glasses.</EA>
<CC>001B40B70C; 001B70H55Q; 001B80A40T</CC>
<FD>Effet Stark; Luminescence; Traitement matériau; Etude expérimentale; Spectre absorption; Spectre émission; Propriété optique; Matériau dopé; Matériau optique; Addition lanthanide; Chalcogénure; Verre chalcogénure; Métal alcalin halogénure; Ion lanthanide; Lanthanide; Addition thulium; Césium Bromure; Transition niveau énergie; 4270C; 7855Q; 8140T; As Ge S</FD>
<ED>Stark effect; Luminescence; Material processing; Experimental study; Absorption spectra; Emission spectra; Optical properties; Doped materials; Optical materials; Rare earth additions; Chalcogenides; Chalcogenide glasses; Alkali metal halides; Lanthanide ion; Rare earths; Thulium additions; Cesium Bromides; Energy-level transitions</ED>
<SD>Tratamiento material; Lantánido ión</SD>
<LO>INIST-14750.354000196419930310</LO>
<ID>08-0382974</ID>
</server>
</inist>
</record>

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