Spectroscopic properties of Tm3+ ions in chalcogenide Ge-As-S glass containing minute amount of Ga and CsBr
Identifieur interne : 000622 ( Pascal/Corpus ); précédent : 000621; suivant : 000623Spectroscopic properties of Tm3+ ions in chalcogenide Ge-As-S glass containing minute amount of Ga and CsBr
Auteurs : YONG GYU CHOI ; JAY HYOK SONGSource :
- Optics communications [ 0030-4018 ] ; 2008.
Descripteurs français
- Pascal (Inist)
- Effet Stark, Luminescence, Traitement matériau, Etude expérimentale, Spectre absorption, Spectre émission, Propriété optique, Matériau dopé, Matériau optique, Addition lanthanide, Chalcogénure, Verre chalcogénure, Métal alcalin halogénure, Ion lanthanide, Lanthanide, Addition thulium, Césium Bromure, Transition niveau énergie, 4270C, 7855Q, 8140T, As Ge S.
English descriptors
- KwdEn :
- Absorption spectra, Alkali metal halides, Cesium Bromides, Chalcogenide glasses, Chalcogenides, Doped materials, Emission spectra, Energy-level transitions, Experimental study, Lanthanide ion, Luminescence, Material processing, Optical materials, Optical properties, Rare earth additions, Rare earths, Stark effect, Thulium additions.
Abstract
We have experimentally confirmed that the absorption and emission properties for intra-4f-configurational transitions of Tm3+ ions doped in Ge-As-S glass, one of representative chalcogenide glasses, are modified dramatically upon the introduction of minute amount of Ga and CsBr, tantamount to a low doping level. This compositional adjustment makes local chemical environments of Tm3+ being rearranged spontaneously without any further thermal treatment applied. The hypersensitive 3H6 ↔3F4 transition, in particular, turns out to reflect the modified chemical environments more significantly than other transitions. Redistribution of the stark levels of 3F4 manifold is mainly responsible for the significant changes in emission spectra for 3H4 → 3F4 and 3F4 → 3H6 transitions. Since the addition of small amount of the group III elements and alkali halides alters only the optical properties of rare-earth ions, while keeping thermal stability of the chalcogenide glass hosts unchanged, our compositional adjustment method would be quite useful for practical applications of rare-earth activated chalcogenide glasses.
Notice en format standard (ISO 2709)
Pour connaître la documentation sur le format Inist Standard.
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Format Inist (serveur)
NO : | PASCAL 08-0382974 INIST |
---|---|
ET : | Spectroscopic properties of Tm3+ ions in chalcogenide Ge-As-S glass containing minute amount of Ga and CsBr |
AU : | YONG GYU CHOI; JAY HYOK SONG |
AF : | Department of Materials Science and Engineering, Korea Aerospace University/Goyang, Gyeonggi 412-791/Corée, République de (1 aut.); Material Laboratory, Corporate R&D Centre, Samsung SDI/Yongin, Gyeonggi 446-577/Corée, République de (2 aut.) |
DT : | Publication en série; Niveau analytique |
SO : | Optics communications; ISSN 0030-4018; Coden OPCOB8; Pays-Bas; Da. 2008; Vol. 281; No. 17; Pp. 4358-4362; Bibl. 25 ref. |
LA : | Anglais |
EA : | We have experimentally confirmed that the absorption and emission properties for intra-4f-configurational transitions of Tm3+ ions doped in Ge-As-S glass, one of representative chalcogenide glasses, are modified dramatically upon the introduction of minute amount of Ga and CsBr, tantamount to a low doping level. This compositional adjustment makes local chemical environments of Tm3+ being rearranged spontaneously without any further thermal treatment applied. The hypersensitive 3H6 ↔3F4 transition, in particular, turns out to reflect the modified chemical environments more significantly than other transitions. Redistribution of the stark levels of 3F4 manifold is mainly responsible for the significant changes in emission spectra for 3H4 → 3F4 and 3F4 → 3H6 transitions. Since the addition of small amount of the group III elements and alkali halides alters only the optical properties of rare-earth ions, while keeping thermal stability of the chalcogenide glass hosts unchanged, our compositional adjustment method would be quite useful for practical applications of rare-earth activated chalcogenide glasses. |
CC : | 001B40B70C; 001B70H55Q; 001B80A40T |
FD : | Effet Stark; Luminescence; Traitement matériau; Etude expérimentale; Spectre absorption; Spectre émission; Propriété optique; Matériau dopé; Matériau optique; Addition lanthanide; Chalcogénure; Verre chalcogénure; Métal alcalin halogénure; Ion lanthanide; Lanthanide; Addition thulium; Césium Bromure; Transition niveau énergie; 4270C; 7855Q; 8140T; As Ge S |
ED : | Stark effect; Luminescence; Material processing; Experimental study; Absorption spectra; Emission spectra; Optical properties; Doped materials; Optical materials; Rare earth additions; Chalcogenides; Chalcogenide glasses; Alkali metal halides; Lanthanide ion; Rare earths; Thulium additions; Cesium Bromides; Energy-level transitions |
SD : | Tratamiento material; Lantánido ión |
LO : | INIST-14750.354000196419930310 |
ID : | 08-0382974 |
Links to Exploration step
Pascal:08-0382974Le document en format XML
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ions in chalcogenide Ge-As-S glass containing minute amount of Ga and CsBr</title>
<author><name sortKey="Yong Gyu Choi" sort="Yong Gyu Choi" uniqKey="Yong Gyu Choi" last="Yong Gyu Choi">YONG GYU CHOI</name>
<affiliation><inist:fA14 i1="01"><s1>Department of Materials Science and Engineering, Korea Aerospace University</s1>
<s2>Goyang, Gyeonggi 412-791</s2>
<s3>KOR</s3>
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<author><name sortKey="Jay Hyok Song" sort="Jay Hyok Song" uniqKey="Jay Hyok Song" last="Jay Hyok Song">JAY HYOK SONG</name>
<affiliation><inist:fA14 i1="02"><s1>Material Laboratory, Corporate R&D Centre, Samsung SDI</s1>
<s2>Yongin, Gyeonggi 446-577</s2>
<s3>KOR</s3>
<sZ>2 aut.</sZ>
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<sourceDesc><biblStruct><analytic><title xml:lang="en" level="a">Spectroscopic properties of Tm<sup>3+</sup>
ions in chalcogenide Ge-As-S glass containing minute amount of Ga and CsBr</title>
<author><name sortKey="Yong Gyu Choi" sort="Yong Gyu Choi" uniqKey="Yong Gyu Choi" last="Yong Gyu Choi">YONG GYU CHOI</name>
<affiliation><inist:fA14 i1="01"><s1>Department of Materials Science and Engineering, Korea Aerospace University</s1>
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<author><name sortKey="Jay Hyok Song" sort="Jay Hyok Song" uniqKey="Jay Hyok Song" last="Jay Hyok Song">JAY HYOK SONG</name>
<affiliation><inist:fA14 i1="02"><s1>Material Laboratory, Corporate R&D Centre, Samsung SDI</s1>
<s2>Yongin, Gyeonggi 446-577</s2>
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<sZ>2 aut.</sZ>
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<series><title level="j" type="main">Optics communications</title>
<title level="j" type="abbreviated">Opt. commun.</title>
<idno type="ISSN">0030-4018</idno>
<imprint><date when="2008">2008</date>
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<seriesStmt><title level="j" type="main">Optics communications</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption spectra</term>
<term>Alkali metal halides</term>
<term>Cesium Bromides</term>
<term>Chalcogenide glasses</term>
<term>Chalcogenides</term>
<term>Doped materials</term>
<term>Emission spectra</term>
<term>Energy-level transitions</term>
<term>Experimental study</term>
<term>Lanthanide ion</term>
<term>Luminescence</term>
<term>Material processing</term>
<term>Optical materials</term>
<term>Optical properties</term>
<term>Rare earth additions</term>
<term>Rare earths</term>
<term>Stark effect</term>
<term>Thulium additions</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Effet Stark</term>
<term>Luminescence</term>
<term>Traitement matériau</term>
<term>Etude expérimentale</term>
<term>Spectre absorption</term>
<term>Spectre émission</term>
<term>Propriété optique</term>
<term>Matériau dopé</term>
<term>Matériau optique</term>
<term>Addition lanthanide</term>
<term>Chalcogénure</term>
<term>Verre chalcogénure</term>
<term>Métal alcalin halogénure</term>
<term>Ion lanthanide</term>
<term>Lanthanide</term>
<term>Addition thulium</term>
<term>Césium Bromure</term>
<term>Transition niveau énergie</term>
<term>4270C</term>
<term>7855Q</term>
<term>8140T</term>
<term>As Ge S</term>
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<front><div type="abstract" xml:lang="en">We have experimentally confirmed that the absorption and emission properties for intra-4f-configurational transitions of Tm<sup>3+</sup>
ions doped in Ge-As-S glass, one of representative chalcogenide glasses, are modified dramatically upon the introduction of minute amount of Ga and CsBr, tantamount to a low doping level. This compositional adjustment makes local chemical environments of Tm<sup>3+</sup>
being rearranged spontaneously without any further thermal treatment applied. The hypersensitive 3H<sub>6</sub>
↔<sup>3</sup>
F<sub>4</sub>
transition, in particular, turns out to reflect the modified chemical environments more significantly than other transitions. Redistribution of the stark levels of 3F<sub>4</sub>
manifold is mainly responsible for the significant changes in emission spectra for <sup>3</sup>
H<sub>4</sub>
→ 3F<sub>4</sub>
and <sup>3</sup>
F<sub>4</sub>
→ 3H<sub>6</sub>
transitions. Since the addition of small amount of the group III elements and alkali halides alters only the optical properties of rare-earth ions, while keeping thermal stability of the chalcogenide glass hosts unchanged, our compositional adjustment method would be quite useful for practical applications of rare-earth activated chalcogenide glasses.</div>
</front>
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ions in chalcogenide Ge-As-S glass containing minute amount of Ga and CsBr</s1>
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<fA11 i1="01" i2="1"><s1>YONG GYU CHOI</s1>
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<fA11 i1="02" i2="1"><s1>JAY HYOK SONG</s1>
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<fA14 i1="01"><s1>Department of Materials Science and Engineering, Korea Aerospace University</s1>
<s2>Goyang, Gyeonggi 412-791</s2>
<s3>KOR</s3>
<sZ>1 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Material Laboratory, Corporate R&D Centre, Samsung SDI</s1>
<s2>Yongin, Gyeonggi 446-577</s2>
<s3>KOR</s3>
<sZ>2 aut.</sZ>
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<fA20><s1>4358-4362</s1>
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<fA60><s1>P</s1>
</fA60>
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<fA66 i1="01"><s0>NLD</s0>
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<fC01 i1="01" l="ENG"><s0>We have experimentally confirmed that the absorption and emission properties for intra-4f-configurational transitions of Tm<sup>3+</sup>
ions doped in Ge-As-S glass, one of representative chalcogenide glasses, are modified dramatically upon the introduction of minute amount of Ga and CsBr, tantamount to a low doping level. This compositional adjustment makes local chemical environments of Tm<sup>3+</sup>
being rearranged spontaneously without any further thermal treatment applied. The hypersensitive 3H<sub>6</sub>
↔<sup>3</sup>
F<sub>4</sub>
transition, in particular, turns out to reflect the modified chemical environments more significantly than other transitions. Redistribution of the stark levels of 3F<sub>4</sub>
manifold is mainly responsible for the significant changes in emission spectra for <sup>3</sup>
H<sub>4</sub>
→ 3F<sub>4</sub>
and <sup>3</sup>
F<sub>4</sub>
→ 3H<sub>6</sub>
transitions. Since the addition of small amount of the group III elements and alkali halides alters only the optical properties of rare-earth ions, while keeping thermal stability of the chalcogenide glass hosts unchanged, our compositional adjustment method would be quite useful for practical applications of rare-earth activated chalcogenide glasses.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B40B70C</s0>
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<fC02 i1="02" i2="3"><s0>001B70H55Q</s0>
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<fC02 i1="03" i2="3"><s0>001B80A40T</s0>
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<s5>03</s5>
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<s5>03</s5>
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<fC03 i1="02" i2="3" l="FRE"><s0>Luminescence</s0>
<s5>04</s5>
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<fC03 i1="02" i2="3" l="ENG"><s0>Luminescence</s0>
<s5>04</s5>
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<fC03 i1="03" i2="X" l="FRE"><s0>Traitement matériau</s0>
<s5>05</s5>
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<s5>05</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Tratamiento material</s0>
<s5>05</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Etude expérimentale</s0>
<s5>30</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Experimental study</s0>
<s5>30</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Spectre absorption</s0>
<s5>41</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Absorption spectra</s0>
<s5>41</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Spectre émission</s0>
<s5>42</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Emission spectra</s0>
<s5>42</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Propriété optique</s0>
<s5>43</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Optical properties</s0>
<s5>43</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Matériau dopé</s0>
<s5>50</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Doped materials</s0>
<s5>50</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Matériau optique</s0>
<s5>57</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Optical materials</s0>
<s5>57</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Addition lanthanide</s0>
<s5>58</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Rare earth additions</s0>
<s5>58</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Chalcogénure</s0>
<s2>NA</s2>
<s5>61</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Chalcogenides</s0>
<s2>NA</s2>
<s5>61</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Verre chalcogénure</s0>
<s5>62</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Chalcogenide glasses</s0>
<s5>62</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Métal alcalin halogénure</s0>
<s5>63</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Alkali metal halides</s0>
<s5>63</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Ion lanthanide</s0>
<s5>64</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>Lanthanide ion</s0>
<s5>64</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Lantánido ión</s0>
<s5>64</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Lanthanide</s0>
<s2>NC</s2>
<s5>65</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Rare earths</s0>
<s2>NC</s2>
<s5>65</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Addition thulium</s0>
<s5>66</s5>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Thulium additions</s0>
<s5>66</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Césium Bromure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>67</s5>
</fC03>
<fC03 i1="17" i2="3" l="ENG"><s0>Cesium Bromides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>67</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>Transition niveau énergie</s0>
<s5>68</s5>
</fC03>
<fC03 i1="18" i2="3" l="ENG"><s0>Energy-level transitions</s0>
<s5>68</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>4270C</s0>
<s4>INC</s4>
<s5>83</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>7855Q</s0>
<s4>INC</s4>
<s5>84</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>8140T</s0>
<s4>INC</s4>
<s5>85</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>As Ge S</s0>
<s4>INC</s4>
<s5>86</s5>
</fC03>
<fN21><s1>245</s1>
</fN21>
</pA>
</standard>
<server><NO>PASCAL 08-0382974 INIST</NO>
<ET>Spectroscopic properties of Tm<sup>3+</sup>
ions in chalcogenide Ge-As-S glass containing minute amount of Ga and CsBr</ET>
<AU>YONG GYU CHOI; JAY HYOK SONG</AU>
<AF>Department of Materials Science and Engineering, Korea Aerospace University/Goyang, Gyeonggi 412-791/Corée, République de (1 aut.); Material Laboratory, Corporate R&D Centre, Samsung SDI/Yongin, Gyeonggi 446-577/Corée, République de (2 aut.)</AF>
<DT>Publication en série; Niveau analytique</DT>
<SO>Optics communications; ISSN 0030-4018; Coden OPCOB8; Pays-Bas; Da. 2008; Vol. 281; No. 17; Pp. 4358-4362; Bibl. 25 ref.</SO>
<LA>Anglais</LA>
<EA>We have experimentally confirmed that the absorption and emission properties for intra-4f-configurational transitions of Tm<sup>3+</sup>
ions doped in Ge-As-S glass, one of representative chalcogenide glasses, are modified dramatically upon the introduction of minute amount of Ga and CsBr, tantamount to a low doping level. This compositional adjustment makes local chemical environments of Tm<sup>3+</sup>
being rearranged spontaneously without any further thermal treatment applied. The hypersensitive 3H<sub>6</sub>
↔<sup>3</sup>
F<sub>4</sub>
transition, in particular, turns out to reflect the modified chemical environments more significantly than other transitions. Redistribution of the stark levels of 3F<sub>4</sub>
manifold is mainly responsible for the significant changes in emission spectra for <sup>3</sup>
H<sub>4</sub>
→ 3F<sub>4</sub>
and <sup>3</sup>
F<sub>4</sub>
→ 3H<sub>6</sub>
transitions. Since the addition of small amount of the group III elements and alkali halides alters only the optical properties of rare-earth ions, while keeping thermal stability of the chalcogenide glass hosts unchanged, our compositional adjustment method would be quite useful for practical applications of rare-earth activated chalcogenide glasses.</EA>
<CC>001B40B70C; 001B70H55Q; 001B80A40T</CC>
<FD>Effet Stark; Luminescence; Traitement matériau; Etude expérimentale; Spectre absorption; Spectre émission; Propriété optique; Matériau dopé; Matériau optique; Addition lanthanide; Chalcogénure; Verre chalcogénure; Métal alcalin halogénure; Ion lanthanide; Lanthanide; Addition thulium; Césium Bromure; Transition niveau énergie; 4270C; 7855Q; 8140T; As Ge S</FD>
<ED>Stark effect; Luminescence; Material processing; Experimental study; Absorption spectra; Emission spectra; Optical properties; Doped materials; Optical materials; Rare earth additions; Chalcogenides; Chalcogenide glasses; Alkali metal halides; Lanthanide ion; Rare earths; Thulium additions; Cesium Bromides; Energy-level transitions</ED>
<SD>Tratamiento material; Lantánido ión</SD>
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