ThuliumV1, Pascal, Corpus, bibRecord, 000191

Pulsed 2-micron lasers based on Tm3+-doped monoclinic double tungstate crystals

Identifieur interne : 000191 ( Pascal/Corpus ); précédent : 000190; suivant : 000192

Pulsed 2-micron lasers based on Tm3+-doped monoclinic double tungstate crystals

Auteurs : X. Mateos ; M. Segura ; W. B. Cho ; A. Schmidt ; F. Rotermund ; M. C. Pujol ; J. J. Carvajal ; M. Aguilo ; F. Diaz ; V. Panyutin ; U. Griebner ; V. Petrov

Source :

Proceedings of SPIE, the International Society for Optical Engineering [ 0277-786X ] ; 2011.

RBID : Pascal:12-0011732

Descripteurs français

Pascal (Inist)
- Blocage mode laser, Pompage par laser, Impulsion ultracourte, Laser déclenché, Laser semiconducteur, Laser pulsé, Diode laser, Application laser, Durée impulsion, Domaine temps ps, Nanotube monofeuillet, Nanotube carbone, Matériau laser, Cristal monoclinique, Addition thulium, Arséniure d'aluminium, Absorbant saturable, Domaine temps ns, Application militaire, Laser solide, ZnSe:Cr, ZnS, Déclenchement passif, Blocage mode passif, AlGaAs, Laser Ti:saphir, 0130C, 4262, 4260G, 4270H, 4255P, 4265R, 8920D.

English descriptors

KwdEn :
- Aluminium arsenides, Carbon nanotubes, Laser beam applications, Laser diodes, Laser materials, Laser mode locking, Laser pumping, Military application, Monoclinic crystals, Pulse width, Pulsed lasers, Q switched laser, Saturable absorbers, Semiconductor lasers, Singlewalled nanotube, Solid state lasers, Thulium additions, Ultrashort pulse, ns range, ps range.

Abstract

Monoclinic crystals of Tm-doped KLu(WO₄)₂ were used to demonstrate pulsed laser operation near 2 μm. Passive Q-switching and passive mode-locking were the techniques employed to produce such laser pulses. For passive Q-switching we used an AlGaAs -based diode laser to pump the active elements and Cr:ZnSe and Cr:ZnS crystals as saturable absorbers. For passive mode-locking we used a Ti:sapphire laser as pump source and single-walled carbon nanotubes as saturable absorbers. In the former case, maximum pulse energies of 200 μJ for a pulse duration of 70 ns were achieved at a repetition rate of 3 kHz with Cr:ZnS saturable absorber, while in the latter case, ultrashort pulse durations of ∼10 ps were measured with a maximum average power of 240 mW. In both laser regimes the oscillation wavelength was ∼1945 nm.

Notice en format standard (ISO 2709)

Pour connaître la documentation sur le format Inist Standard.

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A02	`01`			`@0 PSISDG`
A03		`1`		`@0 Proc. SPIE Int. Soc. Opt. Eng.`
A05				`@2 8039`
A08	`01`	`1`	`ENG`	`@1 Pulsed 2-micron lasers based on Tm³⁺-doped monoclinic double tungstate crystals`
A09	`01`	`1`	`ENG`	`@1 Laser technology for defense and security VII : 25-27 April 2011, Orlando, Florida, United States`
A11	`01`	`1`		`@1 MATEOS (X.)`
A11	`02`	`1`		`@1 SEGURA (M.)`
A11	`03`	`1`		`@1 CHO (W. B.)`
A11	`04`	`1`		`@1 SCHMIDT (A.)`
A11	`05`	`1`		`@1 ROTERMUND (F.)`
A11	`06`	`1`		`@1 PUJOL (M. C.)`
A11	`07`	`1`		`@1 CARVAJAL (J. J.)`
A11	`08`	`1`		`@1 AGUILO (M.)`
A11	`09`	`1`		`@1 DIAZ (F.)`
A11	`10`	`1`		`@1 PANYUTIN (V.)`
A11	`11`	`1`		`@1 GRIEBNER (U.)`
A11	`12`	`1`		`@1 PETROV (V.)`
A12	`01`	`1`		`@1 DUBINSKII (Mark A.) @9 ed.`
A12	`02`	`1`		`@1 POST (Stephen G.) @9 ed.`
A14	`01`			`@1 Física i Cristal.lografia de Materials i Nanomaterials, FiCMA-FiCNA @2 43007 Tarragona @3 ESP @Z 1 aut. @Z 2 aut. @Z 6 aut. @Z 7 aut. @Z 8 aut. @Z 9 aut.`
A14	`02`			`@1 Max-Born-Institute for Nonlinear Optics and Short Pulse Spectroscopy, Max-Born-Str. 2a @2 12489 Berlin @3 DEU @Z 1 aut. @Z 4 aut. @Z 10 aut. @Z 11 aut. @Z 12 aut.`
A14	`03`			`@1 Division of Energy Systems Research, Ajou University, San 5 Wonchun-dong @2 443-749 Suwon @3 KOR @Z 3 aut. @Z 5 aut.`
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A44				`@0 0000 @1 © 2012 INIST-CNRS. All rights reserved.`
A45				`@0 28 ref.`
A47	`01`	`1`		`@0 12-0011732`
A60				`@1 P @2 C`
A61				`@0 A`
A64	`01`	`1`		`@0 Proceedings of SPIE, the International Society for Optical Engineering`
A66	`01`			`@0 USA`
C01	`01`		`ENG`	@0 Monoclinic crystals of Tm-doped KLu(WO₄)₂ were used to demonstrate pulsed laser operation near 2 μm. Passive Q-switching and passive mode-locking were the techniques employed to produce such laser pulses. For passive Q-switching we used an AlGaAs -based diode laser to pump the active elements and Cr:ZnSe and Cr:ZnS crystals as saturable absorbers. For passive mode-locking we used a Ti:sapphire laser as pump source and single-walled carbon nanotubes as saturable absorbers. In the former case, maximum pulse energies of 200 μJ for a pulse duration of 70 ns were achieved at a repetition rate of 3 kHz with Cr:ZnS saturable absorber, while in the latter case, ultrashort pulse durations of ∼10 ps were measured with a maximum average power of 240 mW. In both laser regimes the oscillation wavelength was ∼1945 nm.
C02	`01`	`3`		`@0 001B00A30C`
C02	`02`	`3`		`@0 001B40B62`
C02	`03`	`3`		`@0 001B40B70H`
C02	`04`	`3`		`@0 001B40B55P`
C03	`01`	`3`	`FRE`	`@0 Blocage mode laser @5 01`
C03	`01`	`3`	`ENG`	`@0 Laser mode locking @5 01`
C03	`02`	`3`	`FRE`	`@0 Pompage par laser @5 03`
C03	`02`	`3`	`ENG`	`@0 Laser pumping @5 03`
C03	`03`	`X`	`FRE`	`@0 Impulsion ultracourte @5 04`
C03	`03`	`X`	`ENG`	`@0 Ultrashort pulse @5 04`
C03	`03`	`X`	`SPA`	`@0 Impulsión ultracorto @5 04`
C03	`04`	`X`	`FRE`	`@0 Laser déclenché @5 09`
C03	`04`	`X`	`ENG`	`@0 Q switched laser @5 09`
C03	`04`	`X`	`SPA`	`@0 Laser disparado @5 09`
C03	`05`	`3`	`FRE`	`@0 Laser semiconducteur @5 10`
C03	`05`	`3`	`ENG`	`@0 Semiconductor lasers @5 10`
C03	`06`	`3`	`FRE`	`@0 Laser pulsé @5 11`
C03	`06`	`3`	`ENG`	`@0 Pulsed lasers @5 11`
C03	`07`	`3`	`FRE`	`@0 Diode laser @5 12`
C03	`07`	`3`	`ENG`	`@0 Laser diodes @5 12`
C03	`08`	`3`	`FRE`	`@0 Application laser @5 19`
C03	`08`	`3`	`ENG`	`@0 Laser beam applications @5 19`
C03	`09`	`X`	`FRE`	`@0 Durée impulsion @5 41`
C03	`09`	`X`	`ENG`	`@0 Pulse width @5 41`
C03	`09`	`X`	`SPA`	`@0 Duración impulso @5 41`
C03	`10`	`3`	`FRE`	`@0 Domaine temps ps @5 42`
C03	`10`	`3`	`ENG`	`@0 ps range @5 42`
C03	`11`	`3`	`FRE`	`@0 Nanotube monofeuillet @5 47`
C03	`11`	`3`	`ENG`	`@0 Singlewalled nanotube @5 47`
C03	`12`	`3`	`FRE`	`@0 Nanotube carbone @5 48`
C03	`12`	`3`	`ENG`	`@0 Carbon nanotubes @5 48`
C03	`13`	`3`	`FRE`	`@0 Matériau laser @5 57`
C03	`13`	`3`	`ENG`	`@0 Laser materials @5 57`
C03	`14`	`X`	`FRE`	`@0 Cristal monoclinique @5 61`
C03	`14`	`X`	`ENG`	`@0 Monoclinic crystals @5 61`
C03	`14`	`X`	`SPA`	`@0 Cristal monoclínico @5 61`
C03	`15`	`3`	`FRE`	`@0 Addition thulium @5 62`
C03	`15`	`3`	`ENG`	`@0 Thulium additions @5 62`
C03	`16`	`3`	`FRE`	`@0 Arséniure d'aluminium @2 NK @5 63`
C03	`16`	`3`	`ENG`	`@0 Aluminium arsenides @2 NK @5 63`
C03	`17`	`3`	`FRE`	`@0 Absorbant saturable @5 64`
C03	`17`	`3`	`ENG`	`@0 Saturable absorbers @5 64`
C03	`18`	`3`	`FRE`	`@0 Domaine temps ns @5 65`
C03	`18`	`3`	`ENG`	`@0 ns range @5 65`
C03	`19`	`X`	`FRE`	`@0 Application militaire @5 66`
C03	`19`	`X`	`ENG`	`@0 Military application @5 66`
C03	`19`	`X`	`SPA`	`@0 Aplicación militar @5 66`
C03	`20`	`3`	`FRE`	`@0 Laser solide @5 67`
C03	`20`	`3`	`ENG`	`@0 Solid state lasers @5 67`
C03	`21`	`3`	`FRE`	`@0 ZnSe:Cr @4 INC @5 71`
C03	`22`	`3`	`FRE`	`@0 ZnS @4 INC @5 72`
C03	`23`	`3`	`FRE`	`@0 Déclenchement passif @4 INC @5 83`
C03	`24`	`3`	`FRE`	`@0 Blocage mode passif @4 INC @5 84`
C03	`25`	`3`	`FRE`	`@0 AlGaAs @4 INC @5 85`
C03	`26`	`3`	`FRE`	`@0 Laser Ti:saphir @4 INC @5 86`
C03	`27`	`3`	`FRE`	`@0 0130C @4 INC @5 87`
C03	`28`	`3`	`FRE`	`@0 4262 @4 INC @5 88`
C03	`29`	`3`	`FRE`	`@0 4260G @4 INC @5 89`
C03	`30`	`3`	`FRE`	`@0 4270H @4 INC @5 91`
C03	`31`	`3`	`FRE`	`@0 4255P @4 INC @5 92`
C03	`32`	`3`	`FRE`	`@0 4265R @4 INC @5 93`
C03	`33`	`3`	`FRE`	`@0 8920D @4 INC @5 94`
N21				`@1 002`
N44	`01`			`@1 OTO`
N82				`@1 OTO`

A30	`01`	`1`	`ENG`	`@1 Laser technology for defense and security. Conference @2 07 @3 Orlando FL USA @4 2011-04-25`

Format Inist (serveur)

NO :	PASCAL 12-0011732 INIST
ET :	Pulsed 2-micron lasers based on Tm³⁺-doped monoclinic double tungstate crystals
AU :	MATEOS (X.); SEGURA (M.); CHO (W. B.); SCHMIDT (A.); ROTERMUND (F.); PUJOL (M. C.); CARVAJAL (J. J.); AGUILO (M.); DIAZ (F.); PANYUTIN (V.); GRIEBNER (U.); PETROV (V.); DUBINSKII (Mark A.); POST (Stephen G.)
AF :	Física i Cristal.lografia de Materials i Nanomaterials, FiCMA-FiCNA/43007 Tarragona/Espagne (1 aut., 2 aut., 6 aut., 7 aut., 8 aut., 9 aut.); Max-Born-Institute for Nonlinear Optics and Short Pulse Spectroscopy, Max-Born-Str. 2a/12489 Berlin/Allemagne (1 aut., 4 aut., 10 aut., 11 aut., 12 aut.); Division of Energy Systems Research, Ajou University, San 5 Wonchun-dong/443-749 Suwon/Corée, République de (3 aut., 5 aut.)
DT :	Publication en série; Congrès; Niveau analytique
SO :	Proceedings of SPIE, the International Society for Optical Engineering; ISSN 0277-786X; Coden PSISDG; Etats-Unis; Da. 2011; Vol. 8039; 803902.1-803902.9; Bibl. 28 ref.
LA :	Anglais
EA :	Monoclinic crystals of Tm-doped KLu(WO₄)₂ were used to demonstrate pulsed laser operation near 2 μm. Passive Q-switching and passive mode-locking were the techniques employed to produce such laser pulses. For passive Q-switching we used an AlGaAs -based diode laser to pump the active elements and Cr:ZnSe and Cr:ZnS crystals as saturable absorbers. For passive mode-locking we used a Ti:sapphire laser as pump source and single-walled carbon nanotubes as saturable absorbers. In the former case, maximum pulse energies of 200 μJ for a pulse duration of 70 ns were achieved at a repetition rate of 3 kHz with Cr:ZnS saturable absorber, while in the latter case, ultrashort pulse durations of ∼10 ps were measured with a maximum average power of 240 mW. In both laser regimes the oscillation wavelength was ∼1945 nm.
CC :	001B00A30C; 001B40B62; 001B40B70H; 001B40B55P
FD :	Blocage mode laser; Pompage par laser; Impulsion ultracourte; Laser déclenché; Laser semiconducteur; Laser pulsé; Diode laser; Application laser; Durée impulsion; Domaine temps ps; Nanotube monofeuillet; Nanotube carbone; Matériau laser; Cristal monoclinique; Addition thulium; Arséniure d'aluminium; Absorbant saturable; Domaine temps ns; Application militaire; Laser solide; ZnSe:Cr; ZnS; Déclenchement passif; Blocage mode passif; AlGaAs; Laser Ti:saphir; 0130C; 4262; 4260G; 4270H; 4255P; 4265R; 8920D
ED :	Laser mode locking; Laser pumping; Ultrashort pulse; Q switched laser; Semiconductor lasers; Pulsed lasers; Laser diodes; Laser beam applications; Pulse width; ps range; Singlewalled nanotube; Carbon nanotubes; Laser materials; Monoclinic crystals; Thulium additions; Aluminium arsenides; Saturable absorbers; ns range; Military application; Solid state lasers
SD :	Impulsión ultracorto; Laser disparado; Duración impulso; Cristal monoclínico; Aplicación militar
LO :	INIST-21760.354000174755190010
ID :	12-0011732

Links to Exploration step

Pascal:12-0011732

Le document en format XML

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<author><name sortKey="Petrov, V" sort="Petrov, V" uniqKey="Petrov V" first="V." last="Petrov">V. Petrov</name>
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<sourceDesc><biblStruct><analytic><title xml:lang="en" level="a">Pulsed 2-micron lasers based on Tm<sup>3+</sup>
-doped monoclinic double tungstate crystals</title>
<author><name sortKey="Mateos, X" sort="Mateos, X" uniqKey="Mateos X" first="X." last="Mateos">X. Mateos</name>
<affiliation><inist:fA14 i1="01"><s1>Física i Cristal.lografia de Materials i Nanomaterials, FiCMA-FiCNA</s1>
<s2>43007 Tarragona</s2>
<s3>ESP</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>6 aut.</sZ>
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</affiliation>
<affiliation><inist:fA14 i1="02"><s1>Max-Born-Institute for Nonlinear Optics and Short Pulse Spectroscopy, Max-Born-Str. 2a</s1>
<s2>12489 Berlin</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>10 aut.</sZ>
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<author><name sortKey="Segura, M" sort="Segura, M" uniqKey="Segura M" first="M." last="Segura">M. Segura</name>
<affiliation><inist:fA14 i1="01"><s1>Física i Cristal.lografia de Materials i Nanomaterials, FiCMA-FiCNA</s1>
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<affiliation><inist:fA14 i1="03"><s1>Division of Energy Systems Research, Ajou University, San 5 Wonchun-dong</s1>
<s2>443-749 Suwon</s2>
<s3>KOR</s3>
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<author><name sortKey="Schmidt, A" sort="Schmidt, A" uniqKey="Schmidt A" first="A." last="Schmidt">A. Schmidt</name>
<affiliation><inist:fA14 i1="02"><s1>Max-Born-Institute for Nonlinear Optics and Short Pulse Spectroscopy, Max-Born-Str. 2a</s1>
<s2>12489 Berlin</s2>
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<affiliation><inist:fA14 i1="03"><s1>Division of Energy Systems Research, Ajou University, San 5 Wonchun-dong</s1>
<s2>443-749 Suwon</s2>
<s3>KOR</s3>
<sZ>3 aut.</sZ>
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<author><name sortKey="Pujol, M C" sort="Pujol, M C" uniqKey="Pujol M" first="M. C." last="Pujol">M. C. Pujol</name>
<affiliation><inist:fA14 i1="01"><s1>Física i Cristal.lografia de Materials i Nanomaterials, FiCMA-FiCNA</s1>
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<author><name sortKey="Carvajal, J J" sort="Carvajal, J J" uniqKey="Carvajal J" first="J. J." last="Carvajal">J. J. Carvajal</name>
<affiliation><inist:fA14 i1="01"><s1>Física i Cristal.lografia de Materials i Nanomaterials, FiCMA-FiCNA</s1>
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<author><name sortKey="Aguilo, M" sort="Aguilo, M" uniqKey="Aguilo M" first="M." last="Aguilo">M. Aguilo</name>
<affiliation><inist:fA14 i1="01"><s1>Física i Cristal.lografia de Materials i Nanomaterials, FiCMA-FiCNA</s1>
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<author><name sortKey="Diaz, F" sort="Diaz, F" uniqKey="Diaz F" first="F." last="Diaz">F. Diaz</name>
<affiliation><inist:fA14 i1="01"><s1>Física i Cristal.lografia de Materials i Nanomaterials, FiCMA-FiCNA</s1>
<s2>43007 Tarragona</s2>
<s3>ESP</s3>
<sZ>1 aut.</sZ>
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<author><name sortKey="Panyutin, V" sort="Panyutin, V" uniqKey="Panyutin V" first="V." last="Panyutin">V. Panyutin</name>
<affiliation><inist:fA14 i1="02"><s1>Max-Born-Institute for Nonlinear Optics and Short Pulse Spectroscopy, Max-Born-Str. 2a</s1>
<s2>12489 Berlin</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
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<sZ>11 aut.</sZ>
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</author>
<author><name sortKey="Griebner, U" sort="Griebner, U" uniqKey="Griebner U" first="U." last="Griebner">U. Griebner</name>
<affiliation><inist:fA14 i1="02"><s1>Max-Born-Institute for Nonlinear Optics and Short Pulse Spectroscopy, Max-Born-Str. 2a</s1>
<s2>12489 Berlin</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>10 aut.</sZ>
<sZ>11 aut.</sZ>
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</inist:fA14>
</affiliation>
</author>
<author><name sortKey="Petrov, V" sort="Petrov, V" uniqKey="Petrov V" first="V." last="Petrov">V. Petrov</name>
<affiliation><inist:fA14 i1="02"><s1>Max-Born-Institute for Nonlinear Optics and Short Pulse Spectroscopy, Max-Born-Str. 2a</s1>
<s2>12489 Berlin</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
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</analytic>
<series><title level="j" type="main">Proceedings of SPIE, the International Society for Optical Engineering</title>
<title level="j" type="abbreviated">Proc. SPIE Int. Soc. Opt. Eng.</title>
<idno type="ISSN">0277-786X</idno>
<imprint><date when="2011">2011</date>
</imprint>
</series>
</biblStruct>
</sourceDesc>
<seriesStmt><title level="j" type="main">Proceedings of SPIE, the International Society for Optical Engineering</title>
<title level="j" type="abbreviated">Proc. SPIE Int. Soc. Opt. Eng.</title>
<idno type="ISSN">0277-786X</idno>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium arsenides</term>
<term>Carbon nanotubes</term>
<term>Laser beam applications</term>
<term>Laser diodes</term>
<term>Laser materials</term>
<term>Laser mode locking</term>
<term>Laser pumping</term>
<term>Military application</term>
<term>Monoclinic crystals</term>
<term>Pulse width</term>
<term>Pulsed lasers</term>
<term>Q switched laser</term>
<term>Saturable absorbers</term>
<term>Semiconductor lasers</term>
<term>Singlewalled nanotube</term>
<term>Solid state lasers</term>
<term>Thulium additions</term>
<term>Ultrashort pulse</term>
<term>ns range</term>
<term>ps range</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Blocage mode laser</term>
<term>Pompage par laser</term>
<term>Impulsion ultracourte</term>
<term>Laser déclenché</term>
<term>Laser semiconducteur</term>
<term>Laser pulsé</term>
<term>Diode laser</term>
<term>Application laser</term>
<term>Durée impulsion</term>
<term>Domaine temps ps</term>
<term>Nanotube monofeuillet</term>
<term>Nanotube carbone</term>
<term>Matériau laser</term>
<term>Cristal monoclinique</term>
<term>Addition thulium</term>
<term>Arséniure d'aluminium</term>
<term>Absorbant saturable</term>
<term>Domaine temps ns</term>
<term>Application militaire</term>
<term>Laser solide</term>
<term>ZnSe:Cr</term>
<term>ZnS</term>
<term>Déclenchement passif</term>
<term>Blocage mode passif</term>
<term>AlGaAs</term>
<term>Laser Ti:saphir</term>
<term>0130C</term>
<term>4262</term>
<term>4260G</term>
<term>4270H</term>
<term>4255P</term>
<term>4265R</term>
<term>8920D</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Monoclinic crystals of Tm-doped KLu(WO<sub>4</sub>
)<sub>2</sub>
 were used to demonstrate pulsed laser operation near 2 μm. Passive Q-switching and passive mode-locking were the techniques employed to produce such laser pulses. For passive Q-switching we used an AlGaAs -based diode laser to pump the active elements and Cr:ZnSe and Cr:ZnS crystals as saturable absorbers. For passive mode-locking we used a Ti:sapphire laser as pump source and single-walled carbon nanotubes as saturable absorbers. In the former case, maximum pulse energies of 200 μJ for a pulse duration of 70 ns were achieved at a repetition rate of 3 kHz with Cr:ZnS saturable absorber, while in the latter case, ultrashort pulse durations of ∼10 ps were measured with a maximum average power of 240 mW. In both laser regimes the oscillation wavelength was ∼1945 nm.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0277-786X</s0>
</fA01>
<fA02 i1="01"><s0>PSISDG</s0>
</fA02>
<fA03 i2="1"><s0>Proc. SPIE Int. Soc. Opt. Eng.</s0>
</fA03>
<fA05><s2>8039</s2>
</fA05>
<fA08 i1="01" i2="1" l="ENG"><s1>Pulsed 2-micron lasers based on Tm<sup>3+</sup>
-doped monoclinic double tungstate crystals</s1>
</fA08>
<fA09 i1="01" i2="1" l="ENG"><s1>Laser technology for defense and security VII : 25-27 April 2011, Orlando, Florida, United States</s1>
</fA09>
<fA11 i1="01" i2="1"><s1>MATEOS (X.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>SEGURA (M.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>CHO (W. B.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>SCHMIDT (A.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>ROTERMUND (F.)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>PUJOL (M. C.)</s1>
</fA11>
<fA11 i1="07" i2="1"><s1>CARVAJAL (J. J.)</s1>
</fA11>
<fA11 i1="08" i2="1"><s1>AGUILO (M.)</s1>
</fA11>
<fA11 i1="09" i2="1"><s1>DIAZ (F.)</s1>
</fA11>
<fA11 i1="10" i2="1"><s1>PANYUTIN (V.)</s1>
</fA11>
<fA11 i1="11" i2="1"><s1>GRIEBNER (U.)</s1>
</fA11>
<fA11 i1="12" i2="1"><s1>PETROV (V.)</s1>
</fA11>
<fA12 i1="01" i2="1"><s1>DUBINSKII (Mark A.)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="02" i2="1"><s1>POST (Stephen G.)</s1>
<s9>ed.</s9>
</fA12>
<fA14 i1="01"><s1>Física i Cristal.lografia de Materials i Nanomaterials, FiCMA-FiCNA</s1>
<s2>43007 Tarragona</s2>
<s3>ESP</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Max-Born-Institute for Nonlinear Optics and Short Pulse Spectroscopy, Max-Born-Str. 2a</s1>
<s2>12489 Berlin</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>10 aut.</sZ>
<sZ>11 aut.</sZ>
<sZ>12 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Division of Energy Systems Research, Ajou University, San 5 Wonchun-dong</s1>
<s2>443-749 Suwon</s2>
<s3>KOR</s3>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
</fA14>
<fA18 i1="01" i2="1"><s1>SPIE</s1>
<s3>USA</s3>
<s9>org-cong.</s9>
</fA18>
<fA20><s2>803902.1-803902.9</s2>
</fA20>
<fA21><s1>2011</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA25 i1="01"><s1>SPIE</s1>
<s2>Bellingham WA</s2>
</fA25>
<fA26 i1="01"><s0>978-0-8194-8613-4</s0>
</fA26>
<fA43 i1="01"><s1>INIST</s1>
<s2>21760</s2>
<s5>354000174755190010</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2012 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>28 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>12-0011732</s0>
</fA47>
<fA60><s1>P</s1>
<s2>C</s2>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Proceedings of SPIE, the International Society for Optical Engineering</s0>
</fA64>
<fA66 i1="01"><s0>USA</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Monoclinic crystals of Tm-doped KLu(WO<sub>4</sub>
)<sub>2</sub>
 were used to demonstrate pulsed laser operation near 2 μm. Passive Q-switching and passive mode-locking were the techniques employed to produce such laser pulses. For passive Q-switching we used an AlGaAs -based diode laser to pump the active elements and Cr:ZnSe and Cr:ZnS crystals as saturable absorbers. For passive mode-locking we used a Ti:sapphire laser as pump source and single-walled carbon nanotubes as saturable absorbers. In the former case, maximum pulse energies of 200 μJ for a pulse duration of 70 ns were achieved at a repetition rate of 3 kHz with Cr:ZnS saturable absorber, while in the latter case, ultrashort pulse durations of ∼10 ps were measured with a maximum average power of 240 mW. In both laser regimes the oscillation wavelength was ∼1945 nm.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B00A30C</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B40B62</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B40B70H</s0>
</fC02>
<fC02 i1="04" i2="3"><s0>001B40B55P</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Blocage mode laser</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Laser mode locking</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Pompage par laser</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Laser pumping</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Impulsion ultracourte</s0>
<s5>04</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Ultrashort pulse</s0>
<s5>04</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Impulsión ultracorto</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Laser déclenché</s0>
<s5>09</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Q switched laser</s0>
<s5>09</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Laser disparado</s0>
<s5>09</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Laser semiconducteur</s0>
<s5>10</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Semiconductor lasers</s0>
<s5>10</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Laser pulsé</s0>
<s5>11</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Pulsed lasers</s0>
<s5>11</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Diode laser</s0>
<s5>12</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Laser diodes</s0>
<s5>12</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Application laser</s0>
<s5>19</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Laser beam applications</s0>
<s5>19</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Durée impulsion</s0>
<s5>41</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>Pulse width</s0>
<s5>41</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Duración impulso</s0>
<s5>41</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Domaine temps ps</s0>
<s5>42</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>ps range</s0>
<s5>42</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Nanotube monofeuillet</s0>
<s5>47</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Singlewalled nanotube</s0>
<s5>47</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Nanotube carbone</s0>
<s5>48</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Carbon nanotubes</s0>
<s5>48</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Matériau laser</s0>
<s5>57</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Laser materials</s0>
<s5>57</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Cristal monoclinique</s0>
<s5>61</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>Monoclinic crystals</s0>
<s5>61</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Cristal monoclínico</s0>
<s5>61</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Addition thulium</s0>
<s5>62</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Thulium additions</s0>
<s5>62</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Arséniure d'aluminium</s0>
<s2>NK</s2>
<s5>63</s5>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Aluminium arsenides</s0>
<s2>NK</s2>
<s5>63</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Absorbant saturable</s0>
<s5>64</s5>
</fC03>
<fC03 i1="17" i2="3" l="ENG"><s0>Saturable absorbers</s0>
<s5>64</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>Domaine temps ns</s0>
<s5>65</s5>
</fC03>
<fC03 i1="18" i2="3" l="ENG"><s0>ns range</s0>
<s5>65</s5>
</fC03>
<fC03 i1="19" i2="X" l="FRE"><s0>Application militaire</s0>
<s5>66</s5>
</fC03>
<fC03 i1="19" i2="X" l="ENG"><s0>Military application</s0>
<s5>66</s5>
</fC03>
<fC03 i1="19" i2="X" l="SPA"><s0>Aplicación militar</s0>
<s5>66</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>Laser solide</s0>
<s5>67</s5>
</fC03>
<fC03 i1="20" i2="3" l="ENG"><s0>Solid state lasers</s0>
<s5>67</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>ZnSe:Cr</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>ZnS</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>Déclenchement passif</s0>
<s4>INC</s4>
<s5>83</s5>
</fC03>
<fC03 i1="24" i2="3" l="FRE"><s0>Blocage mode passif</s0>
<s4>INC</s4>
<s5>84</s5>
</fC03>
<fC03 i1="25" i2="3" l="FRE"><s0>AlGaAs</s0>
<s4>INC</s4>
<s5>85</s5>
</fC03>
<fC03 i1="26" i2="3" l="FRE"><s0>Laser Ti:saphir</s0>
<s4>INC</s4>
<s5>86</s5>
</fC03>
<fC03 i1="27" i2="3" l="FRE"><s0>0130C</s0>
<s4>INC</s4>
<s5>87</s5>
</fC03>
<fC03 i1="28" i2="3" l="FRE"><s0>4262</s0>
<s4>INC</s4>
<s5>88</s5>
</fC03>
<fC03 i1="29" i2="3" l="FRE"><s0>4260G</s0>
<s4>INC</s4>
<s5>89</s5>
</fC03>
<fC03 i1="30" i2="3" l="FRE"><s0>4270H</s0>
<s4>INC</s4>
<s5>91</s5>
</fC03>
<fC03 i1="31" i2="3" l="FRE"><s0>4255P</s0>
<s4>INC</s4>
<s5>92</s5>
</fC03>
<fC03 i1="32" i2="3" l="FRE"><s0>4265R</s0>
<s4>INC</s4>
<s5>93</s5>
</fC03>
<fC03 i1="33" i2="3" l="FRE"><s0>8920D</s0>
<s4>INC</s4>
<s5>94</s5>
</fC03>
<fN21><s1>002</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>Laser technology for defense and security. Conference</s1>
<s2>07</s2>
<s3>Orlando FL USA</s3>
<s4>2011-04-25</s4>
</fA30>
</pR>
</standard>
<server><NO>PASCAL 12-0011732 INIST</NO>
<ET>Pulsed 2-micron lasers based on Tm<sup>3+</sup>
-doped monoclinic double tungstate crystals</ET>
<AU>MATEOS (X.); SEGURA (M.); CHO (W. B.); SCHMIDT (A.); ROTERMUND (F.); PUJOL (M. C.); CARVAJAL (J. J.); AGUILO (M.); DIAZ (F.); PANYUTIN (V.); GRIEBNER (U.); PETROV (V.); DUBINSKII (Mark A.); POST (Stephen G.)</AU>
<AF>Física i Cristal.lografia de Materials i Nanomaterials, FiCMA-FiCNA/43007 Tarragona/Espagne (1 aut., 2 aut., 6 aut., 7 aut., 8 aut., 9 aut.); Max-Born-Institute for Nonlinear Optics and Short Pulse Spectroscopy, Max-Born-Str. 2a/12489 Berlin/Allemagne (1 aut., 4 aut., 10 aut., 11 aut., 12 aut.); Division of Energy Systems Research, Ajou University, San 5 Wonchun-dong/443-749 Suwon/Corée, République de (3 aut., 5 aut.)</AF>
<DT>Publication en série; Congrès; Niveau analytique</DT>
<SO>Proceedings of SPIE, the International Society for Optical Engineering; ISSN 0277-786X; Coden PSISDG; Etats-Unis; Da. 2011; Vol. 8039; 803902.1-803902.9; Bibl. 28 ref.</SO>
<LA>Anglais</LA>
<EA>Monoclinic crystals of Tm-doped KLu(WO<sub>4</sub>
)<sub>2</sub>
 were used to demonstrate pulsed laser operation near 2 μm. Passive Q-switching and passive mode-locking were the techniques employed to produce such laser pulses. For passive Q-switching we used an AlGaAs -based diode laser to pump the active elements and Cr:ZnSe and Cr:ZnS crystals as saturable absorbers. For passive mode-locking we used a Ti:sapphire laser as pump source and single-walled carbon nanotubes as saturable absorbers. In the former case, maximum pulse energies of 200 μJ for a pulse duration of 70 ns were achieved at a repetition rate of 3 kHz with Cr:ZnS saturable absorber, while in the latter case, ultrashort pulse durations of ∼10 ps were measured with a maximum average power of 240 mW. In both laser regimes the oscillation wavelength was ∼1945 nm.</EA>
<CC>001B00A30C; 001B40B62; 001B40B70H; 001B40B55P</CC>
<FD>Blocage mode laser; Pompage par laser; Impulsion ultracourte; Laser déclenché; Laser semiconducteur; Laser pulsé; Diode laser; Application laser; Durée impulsion; Domaine temps ps; Nanotube monofeuillet; Nanotube carbone; Matériau laser; Cristal monoclinique; Addition thulium; Arséniure d'aluminium; Absorbant saturable; Domaine temps ns; Application militaire; Laser solide; ZnSe:Cr; ZnS; Déclenchement passif; Blocage mode passif; AlGaAs; Laser Ti:saphir; 0130C; 4262; 4260G; 4270H; 4255P; 4265R; 8920D</FD>
<ED>Laser mode locking; Laser pumping; Ultrashort pulse; Q switched laser; Semiconductor lasers; Pulsed lasers; Laser diodes; Laser beam applications; Pulse width; ps range; Singlewalled nanotube; Carbon nanotubes; Laser materials; Monoclinic crystals; Thulium additions; Aluminium arsenides; Saturable absorbers; ns range; Military application; Solid state lasers</ED>
<SD>Impulsión ultracorto; Laser disparado; Duración impulso; Cristal monoclínico; Aplicación militar</SD>
<LO>INIST-21760.354000174755190010</LO>
<ID>12-0011732</ID>
</server>
</inist>
</record>

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Pulsed 2-micron lasers based on Tm3+-doped monoclinic double tungstate crystals

Pulsed 2-micron lasers based on Tm3+-doped monoclinic double tungstate crystals

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