ThuliumV1, Pascal, Corpus, bibRecord, 000180

Thulium induced reconstructions of the Si(001 ) surface

Identifieur interne : 000180 ( Pascal/Corpus ); précédent : 000179; suivant : 000181

Thulium induced reconstructions of the Si(001 ) surface

Auteurs : Y. Cui ; J. Nogami

Source :

Surface science [ 0039-6028 ] ; 2011.

RBID : Pascal:12-0051710

Descripteurs français

Pascal (Inist)
- Actinide, Thulium, Silicium, Microscopie tunnel balayage, Reconstruction surface, Structure surface, Lanthanide, Tm, Si.

English descriptors

KwdEn :
- Actinides, Rare earths, Scanning tunneling microscopy, Silicon, Surface reconstruction, Surface structure, Thulium.

Abstract

The initial stages of epitaxial growth of Tm on Si(001) are studied by using scanning tunneling microscopy. Tm induces two kinds of surface reconstructions: 2 × 4 and a striped pseudo 2 × 7 phase. The morphology of the 2 x 4 is similar to the 2 x 4 phase induced by other rare earth metals. The pseudo 2 × 7 phase has some common structural elements with the conventional 2 × 7 phase but shows a broad width distribution. Growth of silicide islands and nanowires is seen at higher metal coverages after post deposition annealing. Differences in behavior with respect to other rare earth metals can be attributed to differences in the stable bulk silicides in this system.

Notice en format standard (ISO 2709)

Pour connaître la documentation sur le format Inist Standard.

A01	`01`	`1`		`@0 0039-6028`
A02	`01`			`@0 SUSCAS`
A03		`1`		`@0 Surf. sci.`
A05				`@2 605`
A06				`@2 23-24`
A08	`01`	`1`	`ENG`	`@1 Thulium induced reconstructions of the Si(001 ) surface`
A11	`01`	`1`		`@1 CUI (Y.)`
A11	`02`	`1`		`@1 NOGAMI (J.)`
A14	`01`			`@1 Department of Materials Science and Engineering, University of Toronto @2 Toronto @3 CAN @Z 1 aut. @Z 2 aut.`
A20				`@1 2038-2044`
A21				`@1 2011`
A23	`01`			`@0 ENG`
A43	`01`			`@1 INIST @2 12426 @5 354000505506730170`
A44				`@0 0000 @1 © 2012 INIST-CNRS. All rights reserved.`
A45				`@0 21 ref.`
A47	`01`	`1`		`@0 12-0051710`
A60				`@1 P`
A61				`@0 A`
A64	`01`	`1`		`@0 Surface science`
A66	`01`			`@0 GBR`
C01	`01`		`ENG`	@0 The initial stages of epitaxial growth of Tm on Si(001) are studied by using scanning tunneling microscopy. Tm induces two kinds of surface reconstructions: 2 × 4 and a striped pseudo 2 × 7 phase. The morphology of the 2 x 4 is similar to the 2 x 4 phase induced by other rare earth metals. The pseudo 2 × 7 phase has some common structural elements with the conventional 2 × 7 phase but shows a broad width distribution. Growth of silicide islands and nanowires is seen at higher metal coverages after post deposition annealing. Differences in behavior with respect to other rare earth metals can be attributed to differences in the stable bulk silicides in this system.
C02	`01`	`3`		`@0 001B60`
C02	`02`	`3`		`@0 001B70`
C02	`03`	`3`		`@0 001B80`
C03	`01`	`3`	`FRE`	`@0 Actinide @2 NC @5 01`
C03	`01`	`3`	`ENG`	`@0 Actinides @2 NC @5 01`
C03	`02`	`3`	`FRE`	`@0 Thulium @2 NC @5 02`
C03	`02`	`3`	`ENG`	`@0 Thulium @2 NC @5 02`
C03	`03`	`3`	`FRE`	`@0 Silicium @2 NC @5 03`
C03	`03`	`3`	`ENG`	`@0 Silicon @2 NC @5 03`
C03	`04`	`3`	`FRE`	`@0 Microscopie tunnel balayage @5 04`
C03	`04`	`3`	`ENG`	`@0 Scanning tunneling microscopy @5 04`
C03	`05`	`3`	`FRE`	`@0 Reconstruction surface @5 05`
C03	`05`	`3`	`ENG`	`@0 Surface reconstruction @5 05`
C03	`06`	`3`	`FRE`	`@0 Structure surface @5 06`
C03	`06`	`3`	`ENG`	`@0 Surface structure @5 06`
C03	`07`	`3`	`FRE`	`@0 Lanthanide @2 NC @5 07`
C03	`07`	`3`	`ENG`	`@0 Rare earths @2 NC @5 07`
C03	`08`	`3`	`FRE`	`@0 Tm @4 INC @5 32`
C03	`09`	`3`	`FRE`	`@0 Si @4 INC @5 33`
N21				`@1 030`
N44	`01`			`@1 OTO`
N82				`@1 OTO`

Format Inist (serveur)

NO :	PASCAL 12-0051710 INIST
ET :	Thulium induced reconstructions of the Si(001 ) surface
AU :	CUI (Y.); NOGAMI (J.)
AF :	Department of Materials Science and Engineering, University of Toronto/Toronto/Canada (1 aut., 2 aut.)
DT :	Publication en série; Niveau analytique
SO :	Surface science; ISSN 0039-6028; Coden SUSCAS; Royaume-Uni; Da. 2011; Vol. 605; No. 23-24; Pp. 2038-2044; Bibl. 21 ref.
LA :	Anglais
EA :	The initial stages of epitaxial growth of Tm on Si(001) are studied by using scanning tunneling microscopy. Tm induces two kinds of surface reconstructions: 2 × 4 and a striped pseudo 2 × 7 phase. The morphology of the 2 x 4 is similar to the 2 x 4 phase induced by other rare earth metals. The pseudo 2 × 7 phase has some common structural elements with the conventional 2 × 7 phase but shows a broad width distribution. Growth of silicide islands and nanowires is seen at higher metal coverages after post deposition annealing. Differences in behavior with respect to other rare earth metals can be attributed to differences in the stable bulk silicides in this system.
CC :	001B60; 001B70; 001B80
FD :	Actinide; Thulium; Silicium; Microscopie tunnel balayage; Reconstruction surface; Structure surface; Lanthanide; Tm; Si
ED :	Actinides; Thulium; Silicon; Scanning tunneling microscopy; Surface reconstruction; Surface structure; Rare earths
LO :	INIST-12426.354000505506730170
ID :	12-0051710

Links to Exploration step

Pascal:12-0051710

Le document en format XML

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<front><div type="abstract" xml:lang="en">The initial stages of epitaxial growth of Tm on Si(001) are studied by using scanning tunneling microscopy. Tm induces two kinds of surface reconstructions: 2 × 4 and a striped pseudo 2 × 7 phase. The morphology of the 2 x 4 is similar to the 2 x 4 phase induced by other rare earth metals. The pseudo 2 × 7 phase has some common structural elements with the conventional 2 × 7 phase but shows a broad width distribution. Growth of silicide islands and nanowires is seen at higher metal coverages after post deposition annealing. Differences in behavior with respect to other rare earth metals can be attributed to differences in the stable bulk silicides in this system.</div>
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<fC01 i1="01" l="ENG"><s0>The initial stages of epitaxial growth of Tm on Si(001) are studied by using scanning tunneling microscopy. Tm induces two kinds of surface reconstructions: 2 × 4 and a striped pseudo 2 × 7 phase. The morphology of the 2 x 4 is similar to the 2 x 4 phase induced by other rare earth metals. The pseudo 2 × 7 phase has some common structural elements with the conventional 2 × 7 phase but shows a broad width distribution. Growth of silicide islands and nanowires is seen at higher metal coverages after post deposition annealing. Differences in behavior with respect to other rare earth metals can be attributed to differences in the stable bulk silicides in this system.</s0>
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<ET>Thulium induced reconstructions of the Si(001 ) surface</ET>
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<EA>The initial stages of epitaxial growth of Tm on Si(001) are studied by using scanning tunneling microscopy. Tm induces two kinds of surface reconstructions: 2 × 4 and a striped pseudo 2 × 7 phase. The morphology of the 2 x 4 is similar to the 2 x 4 phase induced by other rare earth metals. The pseudo 2 × 7 phase has some common structural elements with the conventional 2 × 7 phase but shows a broad width distribution. Growth of silicide islands and nanowires is seen at higher metal coverages after post deposition annealing. Differences in behavior with respect to other rare earth metals can be attributed to differences in the stable bulk silicides in this system.</EA>
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Thulium induced reconstructions of the Si(001 ) surface

Thulium induced reconstructions of the Si(001 ) surface

Source :

Descripteurs français

English descriptors

Abstract

Notice en format standard (ISO 2709)

Format Inist (serveur)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri