Electrodiagnosis < Electroluminescence < Electroluminescent device

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 25.
[0-20] [0 - 20][0 - 25][20-24][20-40]

Ident.	Authors (with country if any)	Title
000313 (2010)	M. A. Lourenco [Royaume-Uni] ; C. Opoku [Royaume-Uni] ; R. M. Gwilliam [Royaume-Uni] ; K. P. Homewood [Royaume-Uni]	Photoluminescence study of thulium-doped silicon substrates for light emitting diodes
000470 (2009)	HONG HE [République populaire de Chine] ; WENLIAN LI [République populaire de Chine] ; ZISHENG SU [République populaire de Chine] ; BEI CHU [République populaire de Chine] ; DEFENG BI [République populaire de Chine] ; YIREN CHEN [République populaire de Chine] ; DAN WANG [République populaire de Chine] ; WENMING SU [République populaire de Chine] ; BIN LI [République populaire de Chine]	Interfacial exciplex electroluminescence between diamine derivatives with starburst molecular structure and tris(acetylacetonato)-(mono-phenothroline) thulium
000867 (2006)	S. A. M. Lima [Brésil] ; M. R. Davolos [Brésil] ; C. Legnani [Brésil] ; W. G. Quirino [Brésil] ; M. Cremona [Brésil]	Low voltage electroluminescence of terbium- and thulium-doped zinc oxide films
000898 (2006)	D. Adachi [Japon] ; H. Haze [Japon] ; H. Shirahase [Japon] ; T. Toyama [Japon] ; H. Okamoto [Japon]	Blue emitting thin-film electroluminescent devices utilizing Tm-doped ZnS nanocrystals
000987 (2004-04-05)	F. X. Zang [République populaire de Chine] ; Z. R. Hong [République populaire de Chine] ; W. L. Li [République populaire de Chine] ; M. T. Li [République populaire de Chine] ; X. Y. Sun [République populaire de Chine]	1.4 μm band electroluminescence from organic light-emitting diodes based on thulium complexes
000A79 (2003-12-08)	Joo Han Kim [États-Unis] ; M. R. Davidson [États-Unis] ; Paul. H. Holloway	Electroluminescence from Tm-doped GaN deposited by radio-frequency planar magnetron sputtering
000A88 (2003-09-15)	D. S. Lee [États-Unis] ; A. J. Steckl [États-Unis]	Enhanced blue emission from Tm-doped AlxGa1-xN electroluminescent thin films
000B09 (2003-01-27)	Y. Q. Wang [États-Unis] ; A. J. Steckl [États-Unis]	Three-color integration on rare-earth-doped GaN electroluminescent thin films
000B13 (2003-01-06)	D. S. Lee [États-Unis] ; A. J. Steckl [États-Unis]	Selective enhancement of blue electroluminescence from GaN:Tm
000B35 (2003)	Tadatsugu Minami [Japon] ; Tetsuya Utsubo [Japon] ; Toshihiro Miyata [Japon] ; Yasuyuki Suzuki [Japon]	PL and EL properties of Tm-activated vanadium oxide-based phosphor thin films
000B62 (2003)	H. J. Lee [Japon] ; A. Fujiwara [Japon] ; A. Imada [Japon] ; H. Asahi [Japon]	Gas source MBE growth of TlInGaAs/InP laser diodes and their room temperature operation
000F09 (2000)	J. C. Ronfard-Haret [France] ; P. Valat [France] ; V. Wintgens [France] ; J. Kossanyi [France]	Triboluminescence of trivalent rare earth ions inserted in polycrystalline zinc oxide
001062 (1999)	ZIRUO HONG [République populaire de Chine] ; WENLIAN LI [République populaire de Chine] ; DONGXU ZHAO [République populaire de Chine] ; CHUNJUN LIANG [République populaire de Chine] ; XINGYUAN LIU [République populaire de Chine] ; JUNBIAO PENG [République populaire de Chine] ; DAN ZHAO [République populaire de Chine]	Spectrally-narrow blue light-emitting organic electroluminescent devices utilizing thulium complexes
001131 (1998-03-15)	J. M. Sun [République populaire de Chine] ; G. Z. Zhong ; X. W. Fan ; C. W. Zheng ; Gerd O. Mueller [États-Unis] ; Regina Mueller Mach	Electroluminescence from CaS:TmF3 film prepared by radio frequency magnetron sputtering
001279 (1997-01-01)	Akira Kato [Japon] ; Masayuki Katayama ; Atsushi Mizutani ; Nobuei Ito ; Tadashi Hattori	ZnS:Tm grown by metalorganic chemical vapor deposition with Cl codoping
001424 (1996)	S. Bachir [France] ; C. Sandouly [France] ; J. Kossanyi [France] ; J. C. Ronfard-Haret [France]	Rare earth-doped polycrystalline zinc oxide electroluminescent ceramics
001472 (1996)	Y. Nakanishi [Japon] ; S. Mori [Japon] ; T. Nakamura ; H. Tatsuoka ; H. Kuwabara ; Y. Hatanaka [Japon]	Effect of insulating layer structural properties for thin-film electroluminescent devices
001807 (1994)	A. K. Alshawa [États-Unis] ; H. J. Lozykowski	AC electroluminescence of ZnS:Tm
001808 (1994)	JIANG XU-YIN [République populaire de Chine] ; ZHANG-LIN ; ZHAO WEI-MING ; LUI ZU-GANG ; XU SHAO HONG	A quantitative evaluation of the excitation mechanism of Tm3+ in a ZnS thin film
001886 (1993)	Y. Charreire [France] ; D.-R. Svoronos [France] ; I. Ascone [France] ; O. Tolonen ; L. Niinistö ; M. Leskel	Extended X-ray absorption fine structure studies of luminescent centers in II-VI thin films
001895 (1993)	S. H. Sohn [Japon] ; Y. Hamakawa	Electroluminescence in oxygen co-doped ZnS:TmF3 and ZnS:Tm, Li thin-film devices

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