Ident. | Authors (with country if any) | Title |
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000544 (2008) |
WEIPING QIN [République populaire de Chine] ; CHUNYAN CAO [République populaire de Chine] ; LILI WANG [République populaire de Chine] ; JISEN ZHANG [République populaire de Chine] ; DAISHENG ZHANG [République populaire de Chine] ; KEZHI ZHENG [République populaire de Chine] ; YAN WANG [République populaire de Chine] ; GUODONG WEI [République populaire de Chine] ; GUOFENG WANG [République populaire de Chine] ; PEIFEN ZHU [République populaire de Chine] ; RYONGJIN KIM [République populaire de Chine] | Ultraviolet upconversion fluorescence from 6DJ of Gd3+ induced by 980 nm excitation |
000578 (2008) |
C. Kim [États-Unis] ; D. V. Martyshkin [États-Unis] ; V. V. Fedorov [États-Unis] ; S. B. Mirov [États-Unis] | Room-temperature, mid-infrared Cr2+:ZnSe and Cr2+:ZnS random powder lasers |
000603 (2008) |
Petr Koranda [République tchèque] ; Helena Jelinkova [République tchèque] ; Michal Nemec [République tchèque] ; Jan Sulc [République tchèque] ; Maxim E. Doroshenko [Russie] ; Tasoltan T. Basiev [Russie] ; Vitaly K. Komar [Ukraine] ; Andriy S. Gerasimenko [Ukraine] ; Vyacheslav M. Puzikov [Ukraine] ; V. V. Badikov [Russie] ; D. V. Badikov [Russie] | Mid-infrared Tunable Laser Based on the Cr:ZnSe Active Crystal |
000604 (2008) |
D. V. Martyshkin [États-Unis] ; C. Kim [États-Unis] ; I. S. Moskalev [États-Unis] ; V. V. Fedorov [États-Unis] ; S. B. Mirov [États-Unis] | Mid-IR photoluminescence and lasing of Chromium doped II-VI Quantum Dots |
000616 (2008) |
Petr Koranda [République tchèque] ; Helena Jelinkova [République tchèque] ; Michal Nemec [République tchèque] ; Jan Sulc [République tchèque] ; Maxim E. Doroshenko [Russie] ; Tasoltan T. Basiev [Russie] ; Vitaly K. Komar [Ukraine] ; Andriy S. Gerasimenko [Ukraine] ; Vyacheslav M. Puzikov [Ukraine] ; V. V. Badikov [Russie] ; D. V. Badikov [Russie] | Laser Action in Bulk Cr:ZnSe Crystals |
000665 (2008) |
ZHISONG XIAO [Espagne, République populaire de Chine] ; R. Serna [Espagne] ; FEI XU [Espagne] ; C. N. Afonso [Espagne] | Critical separation for efficient Tm3+-Tm3+ energy transfer evidenced in nanostructured Tm3+:Al2O3 thin films |
000692 (2007) |
J. Elanchezhiyan [Inde] ; K. P. Bhuvana [Inde] ; N. Gopalakrishnan [Inde] ; T. Balasubramanian [Inde] | ZnO based diluted magnetic semiconductor thin films by RF magnetron sputtering for spin photonic devices |
000771 (2007) |
FANGNING SU [République populaire de Chine] ; ZAIDE DENG [République populaire de Chine] | Indirect sensitization blue-upconversion wavelength vary in Tm3+/Yb3+ co-doped TeO2-TiO2-K2O glasses |
000783 (2007) |
J. H. Mun [Japon, France] ; Amor Jouini [Japon] ; A. Novoselov [Japon] ; Y. Guyot [France] ; A. Yoshikawa [Japon] ; H. Ohta [Japon] ; H. Shibata [Japon] ; Y. Waseda [Japon] ; G. Boulon [Japon, France] ; T. Fukuda [Japon] | Growth and characterization of Tm-doped Y2O3 single crystals |
000795 (2007) |
V. A. Akimov [Russie] ; V. I. Kozlovsky [Russie] ; Yu. V. Korostelin [Russie] ; A. I. Landman [Russie] ; Yu. P. Podmar'Kov [Russie] ; Ya. K. Skasyrsky [Russie] ; M. P. Frolov [Russie] | Efficient cw lasing in a Cr2+ : CdSe crystal |
000830 (2006) |
T. Wojtowicz [France] ; F. Gloux [France] ; P. Ruterana [France] ; K. Lorenz [Portugal] ; E. Alves [Portugal] | TEM investigation of Tm implanted GaN, the influence of high temperature annealing |
000859 (2006) |
K. Siemensmeyer [Allemagne] ; K. Flachbart [Slovaquie] ; S. Gabani [Slovaquie] ; S. Mat'As [Allemagne, Slovaquie] ; Y. Paderno [Ukraine] ; N. Shitsevalova [Ukraine] | Magnetic structure of rare-earth dodecaborides |
000866 (2006) |
M. Maqbool [États-Unis] | Luminescence from thulium and samarium doped amorphous AlN thin films deposited by RF magnetron sputtering and the effect of thermal activation on luminescence |
000870 (2006) |
S. Hernandez [Royaume-Uni] ; R. Cusco [Espagne] ; L. Artus [Espagne] ; E. Nogales [Royaume-Uni] ; R. W. Martin [Royaume-Uni] ; K. P. O'Donnell [Royaume-Uni] ; G. Halambalakis [France] ; O. Briar [France] ; K. Lorenz [Portugal] ; E. Alves [Portugal] | Lattice order in thulium-doped GaN epilayers : In situ doping versus ion implantation |
000877 (2006) |
Mathieu Drolet [Canada] ; Bruno Labranche [Canada] ; Dany Lemieux [Canada] ; Pierre Laperle [Canada] ; Daniel Cantin [Canada] ; Yves Taillon [Canada] ; Dina Lozofsky [États-Unis] ; Kennedy Nyairo [États-Unis] | Fiber laser pumped tunable Cr2+:ZnSe laser |
000892 (2006) |
Alphan Sennaroglu [Turquie] ; Umit Demirbas [Turquie] ; Nathalie Vermeulen [Belgique] ; Heidi Ottevaere [Belgique] ; Hugo Thienpont [Belgique] | Continuous-wave broadly tunable Cr2+:ZnSe laser pumped by a thulium fiber laser |
000899 (2006) |
Ashley Harvey [États-Unis] ; BING GUO [États-Unis] ; Ian Kennedy [États-Unis] ; Subhash Rishud [États-Unis] ; Valerie Leppert [États-Unis] | A systematic study of the oxygen K edge in the cubic and less common monoclinic phases of the rare earth oxides (Ho, Er, Tm, Yb) by electron energy loss spectroscopy |
000929 (2005) |
Fadi Z. Qamar [Royaume-Uni] ; Terence A. King [Royaume-Uni] | Passive Q-switching of the Tm-silica fibre laser near 2 μm by a Cr2+:Cr2+ZnSe saturable absorber crystal |
000A66 (2004) |
P. I. Polyakov [Ukraine] ; S. S. Kucherenko [Ukraine] | Dynamics of structural phase transition and changes in properties under the influence of elastically anisotropic deforming stresses, regularities of critical lines and points in magnetic semiconductors and magnetic dielectrics |
000B33 (2003) |
Krishna G. Nath [Japon] ; Yüksel Ufuktepe [Japon] ; Shin-Ichi Kimura [Japon] ; Yuichi Haruyama [Japon] ; Toyohiko Kinoshita [Japon] ; Takeshi Matsumura [Japon] ; Takashi Suzuki [Japon] ; Haruhiko Ogasawara [Japon] ; Akio Kotani [Japon] | Photoemission study of mixed-valent Tm-monochalcogenides: Evidence of electron-correlation effect in different Tm-core levels |
000B36 (2003) |
CHONGFENG GUO [République populaire de Chine] ; BENLI CHU [République populaire de Chine] ; MINGMEI WU [République populaire de Chine] ; QIANG SU [République populaire de Chine] | Oxide coating for alkaline earth sulfide based phosphor |