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Serveur d'exploration sur le thulium

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Le cluster S Tm - TmS

Terms

35S Tm
42TmS
28Sulfure de thulium

Associations

Freq.WeightAssociation
320.835S Tm - TmS
270.787Sulfure de thulium - TmS
Documents par ordre de pertinence
000026 (2014) Nurettin Sahiner [Turquie] ; Kivanc Sel [Turquie] ; Omer Faruk Ozturk [Turquie] ; Sahin Demirci [Turquie] ; Gozde Terzi [Turquie]Facile synthesis and characterization of trimesic acid-Cu based metal organic frameworks
000041 (2014) Christian Pflitsch [Allemagne] ; Benjamin Curdts [Allemagne] ; Martin Helmich [Allemagne] ; Christoph Pasel [Allemagne] ; Christian Notthoff [Allemagne] ; Dieter Bathen [Allemagne] ; Burak Atakan [Allemagne]Chemical vapor infiltration of activated carbon with tetramethylsilane
000119 (2012) Seong-Min Jeong [Corée du Sud] ; Kyung-Hun Kim [Corée du Sud] ; YOUNG JOON YOON [Corée du Sud] ; Myung-Hyun Lee [Corée du Sud] ; Won-Seon Seo [Corée du Sud]Thermodynamic approach to the synthesis of silicon carbide using tetramethylsilane as the precursor at high temperature
000210 (2011) Akira Wada [Japon] ; Takeshi Ogaki [Japon] ; Masahito Niibe [Japon] ; Masahito Tagawa [Japon] ; Hidetoshi Saitoh [Japon] ; Kazuhiro Kanda [Japon] ; Haruhiko Ito [Japon]Local structural analysis of a-SiCx:H films formed by decomposition of tetramethylsilane in microwave discharge flow of Ar
000292 (2010) B. Song [République populaire de Chine] ; X. L. Chen [République populaire de Chine] ; J. C. Han [République populaire de Chine] ; J. K. Jian [République populaire de Chine] ; H. Q. Bao [République populaire de Chine] ; H. Li [République populaire de Chine] ; K. X. Zhu [République populaire de Chine] ; W. Y. Wang [République populaire de Chine] ; G. Wang [République populaire de Chine] ; H. B. Zuo [République populaire de Chine] ; X. H. Zhang [République populaire de Chine] ; S. H. Meng [République populaire de Chine]Structural and magnetic properties of (Al, Fe)-codoped SiC
000301 (2010) Donato Ercole Conte [France] ; Abdelmaula Aboulaich [France] ; Florent Robert [France] ; Josette Olivier-Fourcade [France] ; Jean-Claude Jumas [France] ; Christian Jordy [France] ; Patrick Willmann [France]Snx[BPO4]1-x composites as negative electrodes for lithium ion cells: Comparison with amorphous SnB0.6P0.7O2.9 and effect of composition
000370 (2010) S. G. Kim [Corée du Sud] ; S. W. Kim [Corée du Sud] ; N. Saito [Japon] ; O. Takai [Japon]Effect of increasing hardness on Si-containing diamond-like carbon film during tribo-test
000377 (2010) Young-Woo Kim [Corée du Sud] ; Yonghyun Kim [Corée du Sud] ; Daechul Kim [Corée du Sud] ; Jong-Sik Kim [Corée du Sud] ; Jung-Sik Yoon [Corée du Sud] ; SUK JAE YOO [Corée du Sud] ; Bongju Lee [Corée du Sud]Development and characterization of toroidal magnetron sputtering system for thin films deposition
000411 (2009) C. Corbella [Allemagne] ; I. Bialuch [Allemagne] ; M. Kleinschmidt [Allemagne] ; K. Bewilogua [Allemagne]Up-scaling the production of modified a-C:H coatings in the framework of plasma polymerization processes
000420 (2009) Jerome Roger [France] ; Fabienne Audubert [France] ; Yann Le Petitcorps [France]Thermal reaction of SiC films with Mo, Re and Mo-Re alloy
000450 (2009) Rui-Ge Cao [République populaire de Chine] ; Shu-Xia Liu [République populaire de Chine] ; YING LIU [République populaire de Chine] ; QUN TANG [République populaire de Chine] ; LIANG WANG [République populaire de Chine] ; Lin-Hua Xie [République populaire de Chine] ; Zhong-Min Su [République populaire de Chine]Organic-inorganic hybrids constructed by Anderson-type polyoxoanions and copper coordination complexes
000474 (2009) Tomohiro Nakayama [Japon] ; Toshinori Matsushima [Japon] ; Hideyuki Murata [Japon]Immobilization of aromatic aldehyde molecules on indium tin oxide surface using acetalization reaction
000493 (2009) Yung-Sen Lin [Taïwan] ; Ying-Huei Liao [Taïwan] ; Mao-Syuan Weng [Taïwan]Enhanced scratch resistance of polycarbonate by low temperature plasma-polymerized organosilica
000561 (2008) A. Thiess [Allemagne] ; Y. Mokrousov [Allemagne] ; S. Blügel [Allemagne] ; S. Heinze [Allemagne]Theory and Application of Chain Formation in Break Junctions
000601 (2008) C. Corbella [Allemagne] ; I. Bialuch [Allemagne] ; M. Kleinschmidt [Allemagne] ; K. Bewilogua [Allemagne]Modified DLC coatings prepared in a large-scale reactor by dual microwave/pulsed-DC plasma-activated chemical vapour deposition
000625 (2008) Vytautas Getautis [Lituanie] ; Maryte Daskeviciene [Lituanie] ; Tadas Malinauskas [Lituanie] ; Vygintas Jankauskas [Lituanie] ; Jonas Sidaravicius [Lituanie]Influence of the hydroxyl groups on the properties of hydrazone based molecular glasses
000668 (2008) WUJUN XU [République populaire de Chine] ; QIANG GAO [République populaire de Chine] ; YAO XU [République populaire de Chine] ; DONG WU [République populaire de Chine] ; YUHAN SUN [République populaire de Chine] ; WANLING SHEN [République populaire de Chine] ; FENG DENG [République populaire de Chine]Controlled drug release from bifunctionalized mesoporous silica
000678 (2008) YUFENG ZHAO [États-Unis] ; Mark T. Lusk [États-Unis] ; Anne C. Dillon [États-Unis] ; Michael J. Heben [États-Unis] ; Shengbai B. Zhang [États-Unis]Boron-Based Organometallic Nanostructures : Hydrogen Storage Properties and Structure Stability
000093 (2013) Anusit Keawprajak [Thaïlande] ; Wantana Koetniyom [Thaïlande] ; Phimwipha Piyakulawat [Thaïlande] ; Kanpitcha Jiramitmongkon [Thaïlande] ; Sirapat Pratontep [Thaïlande] ; Udom Asawapirom [Thaïlande]Effects of tetramethylene sulfone solvent additives on conductivity of PEDOT:PSS film and performance of polymer photovoltaic cells
000120 (2012) Jenn-Jiang Hwang [Taïwan]Thermal regenerative design of a fuel cell cogeneration system
000128 (2012) FENG WU [République populaire de Chine] ; JIN XIANG [République populaire de Chine] ; LI LIA [République populaire de Chine] ; JUNZHENG CHEN [République populaire de Chine] ; GUOQIANG TAN [République populaire de Chine] ; RENJIE CHEN [République populaire de Chine]Study of the electrochemical characteristics of sulfonyl isocyanate/sulfone binary electrolytes for use in lithium-ion batteries
000161 (2012) Susanna Neuhold [États-Unis] ; David J. Schroeder [États-Unis] ; John T. Vaughey [États-Unis]Effect of surface preparation and R-group size on the stabilization of lithium metal anodes with silanes
000238 (2011) Chen-Yan Li [Taïwan] ; Ying-Nien Chou [Taïwan] ; Jia-Rong Syu [Taïwan] ; Sung-Nien Hsieh [Taïwan] ; Tzung-Da Tsai [Taïwan] ; Chen-Hao Wu [Taïwan] ; Tzung-Fang Guo [Taïwan] ; Wei-Chou Hsu [Taïwan] ; Yao-Jane Hsu [Taïwan] ; Ten-Chin Wen [Taïwan]Effect of annealing ZnO on the performance of inverted polymer light-emitting diodes based on SAM/ZnO as an electron injection layer
000286 (2010) Attila J. Mozer [Australie] ; Chang-Qi Ma [Allemagne] ; Wallace W. H. Wong [Australie] ; David J. Jones [Australie] ; Peter B Uerle [Allemagne] ; Gordon G. Wallace [Australie]The effect of molecule size and shape on free charge generation, transport and recombination in all-thiophene dendrimer:fullerene bulk heterojunctions
000315 (2010) I-Hsiang Hung [Taïwan] ; Yu-Hsiang Lai [Taïwan] ; ZHE CHUAN FENG [Taïwan] ; Shalini Gupta [États-Unis] ; Tahir Zaidi [États-Unis] ; Ian Ferguson [États-Unis] ; WEIJIE LU [États-Unis]Optical, Structural Properties and Experimental Procedures of GaGdN Grown by Metalorganic Chemical Vapor Deposition
000347 (2010) Alexei D. Bykhovski [États-Unis] ; Dwight L. Woolard [États-Unis]Hybrid Ab Initio/Empirical Modeling of the Conformations and Light-Induced Transitions in Stilbene-Derivatives Bonded to DNA
000486 (2009) Wen-Juan Zhou [France, République populaire de Chine] ; Belén Albela [France] ; Meigui On [France] ; Pascal Perriat [France] ; Ming-Yuan He [République populaire de Chine] ; Laurent Bonneviot [France]Framework and grafted nickel ethylenediamine complexes in 2D hexagonal mesostructured templated silica
000567 (2008) Yurdanur Tiirker [Turquie] ; Omer Dag [Turquie]Synthesis of mesostructured metal sulfide films using [M(H2O)n](NO3)2:P85 (M = Cd(n) and Zn(II)) liquid crystalline mesophases
000716 (2007) A. Bendavid [Australie] ; P. J. Martin [Australie] ; C. Comte [Australie] ; E. W. Preston [Australie] ; A. J. Haq [Australie] ; F. S. Magdon Ismail [Australie] ; R. K. Singh [Australie]The mechanical and biocompatibility properties of DLC-Si films prepared by pulsed DC plasma activated chemical vapor deposition
000762 (2007) E. Simoen [Belgique] ; C. Claeys [Belgique] ; S. Sioncke [Belgique] ; J. Van Steenbergen [Belgique] ; M. Meuris [Belgique] ; S. Forment [Belgique] ; J. Vanhellemont [Belgique] ; P. Clauws [Belgique] ; A. Theuwis [Belgique]Lifetime and leakage current considerations in metal-doped germanium
000787 (2007) S. J. Pearton [États-Unis] ; D. P. Norton [États-Unis] ; M. P. Ivill [États-Unis] ; A. F. Hebard [États-Unis] ; J. M. Zavada [États-Unis] ; W. M. Chen [Suède] ; I. A. Buyanova [Suède]Ferromagnetism in transition-metal doped ZnO
000967 (2005) Didier Chaussende [France] ; Magali Ucar [France] ; Laurent Auvray [France] ; Francis Baillet [France] ; Michel Pons [France] ; Roland Madar [France]Control of the supersaturation in the CF-PVT process for the growth of silicon carbide crystals : Research and applications
000A42 (2004) Do-Hoon Hwang [Corée du Sud] ; Jeong-Ik Lee [Corée du Sud] ; Nam-Sung Cho [Corée du Sud] ; Hong-Ku Shim [Corée du Sud]Light-emitting properties of a germyl-substituted PPV derivative synthesized via a soluble precursor
000A66 (2004) P. I. Polyakov [Ukraine] ; S. S. Kucherenko [Ukraine]Dynamics of structural phase transition and changes in properties under the influence of elastically anisotropic deforming stresses, regularities of critical lines and points in magnetic semiconductors and magnetic dielectrics
000A72 (2004) T. Ohsawa [Japon] ; Y. Matsumoto [Japon] ; H. Koinuma [Japon]Combinatorial investigation of transition metals deposited on anatase TiO2 surface
000B33 (2003) Krishna G. Nath [Japon] ; Yüksel Ufuktepe [Japon] ; Shin-Ichi Kimura [Japon] ; Yuichi Haruyama [Japon] ; Toyohiko Kinoshita [Japon] ; Takeshi Matsumura [Japon] ; Takashi Suzuki [Japon] ; Haruhiko Ogasawara [Japon] ; Akio Kotani [Japon]Photoemission study of mixed-valent Tm-monochalcogenides: Evidence of electron-correlation effect in different Tm-core levels
000C44 (2002) V. N. Antonov [États-Unis] ; B. N. Harmon [États-Unis] ; A. N. Yaresko [Allemagne]The electronic structure of Tm monochalcogenides
000D67 (2001) Y. Nakanishi [Japon] ; T. Sakon [Japon] ; T. Matsumura [Japon] ; Y. Nemoto [Japon] ; H. Hazama [Japon] ; T. Goto [Japon] ; T. Suzuki [Japon] ; M. Motokawa [Japon]Ultrasonic measurements on TmS
000E07 (2001) Yoshiki Nakanishi [Japon] ; Takeshi Matsumura [Japon] ; Fumihiko Takahashi [Japon] ; Takuo Sakon [Japon] ; Takashi Suzuki [Japon] ; Mitsuhiro Motokawa [Japon]Magnetic properties of unusual metal system TmS in high magnetic fields
000E09 (2001) Y. Nakanishi [Japon] ; F. Takahashi [Japon] ; T. Sakon [Japon] ; T. Matsumura [Japon] ; Y. Nemoto [Japon] ; H. Hazama [Japon] ; T. Goto [Japon] ; T. Suzuki [Japon] ; M. Motokawa [Japon]Magnetic properties of TmS in high magnetic fields
001171 (1998) Y. Ufuktepe [Japon] ; S.-I. Kimura [Japon] ; T. Kinoshita [Japon] ; K. G. Nath [Japon] ; H. Kumigashira [Japon] ; T. Takahashi [Japon] ; T. Matsumura [Japon] ; T. Suzuki [Japon] ; H. Ogasawara [Japon] ; A. Kotani [Japon]Resonant photoemission studies of thulium monochalcogenides around the Tm 4d threshold
001203 (1998) P. Wachter [Suisse] ; S. Kamba [République tchèque] ; M. Grioni [Suisse]Empty 4f states in TmS
000820 (2006) J. Derr [France] ; J. Flouquet [France] ; B. Salce [France] ; G. Knebel [France]Valence and magnetic ordering in the mixed valent compound TmSe
001351 (1997) K.-J. Range [Allemagne] ; A. Gietl [Allemagne] ; M. Andratschke [Allemagne]Crystal structure of dithulium trisulfide, Tm2S3-III
001907 (1993) K.-K. Range [Allemagne] ; F. Rau ; U. KlementCrystal structure of thulium sulfide (5/7) Tm5S7
Wicri

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