Semiconducteur And NotTakashi Suzuki
List of bibliographic references
Number of relevant bibliographic references: 32.| Ident. | Authors (with country if any) | Title |
|---|---|---|
| 000236 | JISEN ZHANG [République populaire de Chine] ; CHUNYAN CAO [République populaire de Chine] ; SHAOZHE LU [République populaire de Chine] ; Wei-Ping Qin [République populaire de Chine] | Energy Transition between Yb3+-Tm3+-Gd3+ in Gd3+, Yb3+and Tm3+ Co-doped Fluoride Nanocrystals |
| 000709 | M. Dongol [Égypte] ; M. M. El-Nahass [Égypte] ; M. Abou-Zied [Égypte] ; A. El-Denglawey [Égypte] | Thermoelectric properties and mobility activation energy of amorphous As20Se80- xTlx films |
| 000867 | S. A. M. Lima [Brésil] ; M. R. Davolos [Brésil] ; C. Legnani [Brésil] ; W. G. Quirino [Brésil] ; M. Cremona [Brésil] | Low voltage electroluminescence of terbium- and thulium-doped zinc oxide films |
| 000935 | T. Andreev [France] ; Y. Hori [France, Japon] ; X. Biquard [France] ; E. Monroy [France] ; D. Jalabert [France] ; A. Farchi [France] ; M. Tanaka [Japon] ; O. Oda [Japon] ; Le Si Dang [France] ; B. Daudin [France] | Optical and morphological properties of GaN quantum dots doped with Tm |
| 000992 | P. Wachter [Suisse] ; B. Bucher [Suisse] ; J. Malar [Suisse] | Possibility of a superfluid phase in a Bose condensed excitonic state |
| 000A17 | John B. Gruber [États-Unis] ; Ulrich Vetter [Allemagne] ; Hans Hofs Ss [Allemagne] ; Bahram Zandi [États-Unis] ; Michael F. Reid [Nouvelle-Zélande] | Spectra and energy levels of Tm3+(4f12) in AlN |
| 000B37 | E. Rita [Portugal] ; E. Alves [Portugal] ; U. Wahl [Portugal] ; J. G. Correia [Portugal] ; A. J. Neves [Portugal] ; M. J. Soares [Portugal] ; T. Monteiro [Portugal] | Optical doping of ZnO with Tm by ion implantation |
| 000B68 | P. Wachter [Suisse] ; . B. Bucher [Suisse] ; J. Malar [Suisse] | Evidence of a superfluid phase in a bose condensed excitonic state |
| 001571 | N. Imanaka [Japon] ; Y. Hirota ; G.-Y. Adachi | Selective nitrogen dioxide gas sensor based on rare earth cuprate semiconductors |
| 001756 | P. Wachter [Suisse] ; A. Jung | Intermediate valence and the possiblity of a magnetic excitonic insulator |
| 001905 | S. Bachir [France] ; J. C. Ronfard-Haret ; K. Azuma ; D. Kouyate ; J. Kossanyi | Direct impact excitation of thulium (III) luminescence in polycrystalline ZnO:Tm3+ electrodes in contact with an aqueous electrolyte, and attribution of the luminescence spectrum |
| 001937 | K. Pressel [Allemagne] ; J. Weber ; C. Hiller ; D. Ottenw Lder ; W. Kürner ; A. Dörnen ; F. Scholz ; K. Locke ; D. Wiedmann ; F. Cordeddu | Tm3+-related emissions in III-V semiconductors grown by metalorganic vapor phase epitaxy |
| 001939 | F. Scholz [Allemagne] ; J. Weber [Allemagne] ; D. Ottenw Lder [Allemagne] ; K. Pressel [Allemagne] ; C. Hiller [Allemagne] ; A. Dörnen [Allemagne] ; K. Locke ; F. Cordeddu ; D. Wiedmann | Tm doping of III-V semiconductors by MOVPE |
| 001974 | G. S. Pomrenke [États-Unis] ; E. Silkowski ; J. E. Colon ; D. J. Topp ; Y. K. Yeo ; R. L. Hengehold | Luminescence of thulium in III-V semiconductors and silicon |
| 001999 | A. K. Pandit [Inde] ; B. M. Wanklyn ; T. H. Ansari [Inde] ; R. A. Singh [Inde] | Electrical conduction in Tm2Ti2O7 single crystal |
| 001A56 | A. S. Mishchenko [Russie] ; K. A. Kikoin | Lattice dynamics of rare-earth semiconductors with unstable valence |
| 001A61 | B. A. Akimov [Russie] ; E. N. Korobeinkilova ; L. I. Ryabova ; M. E. Tamm | Influence of Tm on the properties of lead telluride |
| 001A81 | R. Boyn ; M. J. Kozielski ; H. Zimmermann | Distribution of Tm centers incorporated in ZnS single crystal during high-pressure Bridgman growth |
| 001A82 | D. E. Nazyrov [Russie] ; G. S. Kulikov ; R. S. Makovich ; A. Tybulewicz | Diffusion of erbium and thulium in silicon |
| 001A87 | SHUBHA GOKHALE [Inde] ; SHAILAJA MAHAMUNI ; KIRAN JOSHI ; A. S. Nigavekar ; S. K. Kulkarni | Chemical interaction at the Tm/Si(111) interface |
| 001B41 | M. Bouvet ; J. Simon | Electrical properties of rare earth bisphthalocyanine and bisnaphthalocyanine complexes |
| 001C97 | C. Mondoloni ; R. Suryanarayanan ; O. Gorochov ; H. Bach ; P. Stauche | On the valence state of Tm in Yb0.9 Tm0.1S0.8Se0.2 |
| 001D09 | J. P. Andreeta ; H. C. Basso ; E. E. Castellano ; J. N. H. Gallo ; A. A. Martin ; O. E. Piro | Crystallographic phases and transport properties in the superconducting Tm-Ba-Cu-O compound system |
| 001D69 | A. D. Yoffe ; K. J. Howlett | Low temperature cathodoluminescence studies of Tm and Er implanted hexagonal ZnS and ZnSe crystals |
| 001D79 | JAE SHI CHOI ; KEU HONG KIM ; WON YANG CHUNG | Defect structure and electrical conductivity studies of thulium sesquioxide |
| 001E29 | H. Zimmermann ; R. Boyn | Site selective spectroscopy of ZnS:Tm3+ crystals |
| 001E36 | B. G. Tagiev ; G. M. Niftiev ; F. S. Aid Eav | Photoluminescence of GaSe:Tm single crystals |
| 001E57 | W. Reim ; P. Wachter | First observation of a magnetic-exchange-induced valence transition |
| 001E59 | CHANG-XIN GUO ; D. E. Ellis | Energy levels, luminescence and electronic structure of ZnS: Tm3+ |
| 001E60 | I. A. Smirnov ; A. V. Golubkov ; E. V. Goncharova ; V. M. Sergeeva ; V. V. Popov ; M. V. Romanova ; B. M. Buttaev ; V. S. Oskhotskii | Electrical and galvanomagnetic properties of Tm1-xLaxS |
| 001F60 | I. Morke ; P. Wachter | Inelastic light scattering in semiconducting TmSe1-xTex: strong f-d mixing |
| 001F67 | H.-J. Brocksch ; D. Tomanek ; K. H. Bennemann | Calculation of surface core-level shifts in intermediate-valence compounds |
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