ThuliumV1, Ncbi, Curation, bibRecord, 000567

Diode-pumped mode-locked femtosecond Tm:CLNGG disordered crystal laser.

Identifieur interne : 000567 ( Ncbi/Curation ); précédent : 000566; suivant : 000568

Diode-pumped mode-locked femtosecond Tm:CLNGG disordered crystal laser.

Auteurs : J. Ma [République populaire de Chine] ; G Q Xie ; W L Gao ; P. Yuan ; L J Qian ; H H Yu ; H J Zhang ; J Y Wang

Source :

Optics letters [ 1539-4794 ] ; 2012.

RBID : pubmed:22513691

Descripteurs français

KwdFr :
- Calcium (), Facteurs temps, Gallium (), Lasers à solide, Lithium (), Niobium (), Semiconducteurs, Thulium ().
MESH :
- Calcium, Facteurs temps, Gallium, Lasers à solide, Lithium, Niobium, Semiconducteurs, Thulium.

English descriptors

KwdEn :
- Calcium (chemistry), Gallium (chemistry), Lasers, Solid-State, Lithium (chemistry), Niobium (chemistry), Optical Processes, Semiconductors, Thulium (chemistry), Time Factors.
MESH :
- chemical , chemistry : Calcium, Gallium, Lithium, Niobium, Thulium.
- Lasers, Solid-State, Optical Processes, Semiconductors, Time Factors.

Abstract

A diode-end-pumped passively mode-locked femtosecond Tm-doped calcium lithium niobium gallium garnet (Tm:CLNGG) disordered crystal laser was demonstrated for the first time to our knowledge. With a 790 nm laser diode pumping, stable CW mode-locking operation was obtained by using a semiconductor saturable absorber mirror. The disordered crystal laser generated mode-locked pulses as short as 479 fs, with an average output power of 288 mW, and repetition rate of 99 MHz in 2 μm spectral region.

PubMed: 22513691

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pubmed:22513691

Le document en format XML

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<author><name sortKey="Ma, J" sort="Ma, J" uniqKey="Ma J" first="J" last="Ma">J. Ma</name>
<affiliation wicri:level="1"><nlm:affiliation>Department of Physics, Key Laboratory for Laser Plasmas (Ministry of Education), Shanghai Jiao Tong University, Shanghai 200240, China.</nlm:affiliation>
<country xml:lang="fr">République populaire de Chine</country>
<wicri:regionArea>Department of Physics, Key Laboratory for Laser Plasmas (Ministry of Education), Shanghai Jiao Tong University, Shanghai 200240</wicri:regionArea>
<wicri:noRegion>Shanghai 200240</wicri:noRegion>
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<author><name sortKey="Xie, G Q" sort="Xie, G Q" uniqKey="Xie G" first="G Q" last="Xie">G Q Xie</name>
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<author><name sortKey="Gao, W L" sort="Gao, W L" uniqKey="Gao W" first="W L" last="Gao">W L Gao</name>
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<author><name sortKey="Yuan, P" sort="Yuan, P" uniqKey="Yuan P" first="P" last="Yuan">P. Yuan</name>
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<author><name sortKey="Qian, L J" sort="Qian, L J" uniqKey="Qian L" first="L J" last="Qian">L J Qian</name>
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<author><name sortKey="Yu, H H" sort="Yu, H H" uniqKey="Yu H" first="H H" last="Yu">H H Yu</name>
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<author><name sortKey="Zhang, H J" sort="Zhang, H J" uniqKey="Zhang H" first="H J" last="Zhang">H J Zhang</name>
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<author><name sortKey="Wang, J Y" sort="Wang, J Y" uniqKey="Wang J" first="J Y" last="Wang">J Y Wang</name>
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<sourceDesc><biblStruct><analytic><title xml:lang="en">Diode-pumped mode-locked femtosecond Tm:CLNGG disordered crystal laser.</title>
<author><name sortKey="Ma, J" sort="Ma, J" uniqKey="Ma J" first="J" last="Ma">J. Ma</name>
<affiliation wicri:level="1"><nlm:affiliation>Department of Physics, Key Laboratory for Laser Plasmas (Ministry of Education), Shanghai Jiao Tong University, Shanghai 200240, China.</nlm:affiliation>
<country xml:lang="fr">République populaire de Chine</country>
<wicri:regionArea>Department of Physics, Key Laboratory for Laser Plasmas (Ministry of Education), Shanghai Jiao Tong University, Shanghai 200240</wicri:regionArea>
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<author><name sortKey="Xie, G Q" sort="Xie, G Q" uniqKey="Xie G" first="G Q" last="Xie">G Q Xie</name>
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<author><name sortKey="Gao, W L" sort="Gao, W L" uniqKey="Gao W" first="W L" last="Gao">W L Gao</name>
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<author><name sortKey="Yuan, P" sort="Yuan, P" uniqKey="Yuan P" first="P" last="Yuan">P. Yuan</name>
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<author><name sortKey="Qian, L J" sort="Qian, L J" uniqKey="Qian L" first="L J" last="Qian">L J Qian</name>
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<author><name sortKey="Yu, H H" sort="Yu, H H" uniqKey="Yu H" first="H H" last="Yu">H H Yu</name>
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<author><name sortKey="Zhang, H J" sort="Zhang, H J" uniqKey="Zhang H" first="H J" last="Zhang">H J Zhang</name>
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<author><name sortKey="Wang, J Y" sort="Wang, J Y" uniqKey="Wang J" first="J Y" last="Wang">J Y Wang</name>
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<series><title level="j">Optics letters</title>
<idno type="eISSN">1539-4794</idno>
<imprint><date when="2012" type="published">2012</date>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Calcium (chemistry)</term>
<term>Gallium (chemistry)</term>
<term>Lasers, Solid-State</term>
<term>Lithium (chemistry)</term>
<term>Niobium (chemistry)</term>
<term>Optical Processes</term>
<term>Semiconductors</term>
<term>Thulium (chemistry)</term>
<term>Time Factors</term>
</keywords>
<keywords scheme="KwdFr" xml:lang="fr"><term>Calcium ()</term>
<term>Facteurs temps</term>
<term>Gallium ()</term>
<term>Lasers à solide</term>
<term>Lithium ()</term>
<term>Niobium ()</term>
<term>Semiconducteurs</term>
<term>Thulium ()</term>
</keywords>
<keywords scheme="MESH" type="chemical" qualifier="chemistry" xml:lang="en"><term>Calcium</term>
<term>Gallium</term>
<term>Lithium</term>
<term>Niobium</term>
<term>Thulium</term>
</keywords>
<keywords scheme="MESH" xml:lang="en"><term>Lasers, Solid-State</term>
<term>Optical Processes</term>
<term>Semiconductors</term>
<term>Time Factors</term>
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<keywords scheme="MESH" xml:lang="fr"><term>Calcium</term>
<term>Facteurs temps</term>
<term>Gallium</term>
<term>Lasers à solide</term>
<term>Lithium</term>
<term>Niobium</term>
<term>Semiconducteurs</term>
<term>Thulium</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">A diode-end-pumped passively mode-locked femtosecond Tm-doped calcium lithium niobium gallium garnet (Tm:CLNGG) disordered crystal laser was demonstrated for the first time to our knowledge. With a 790 nm laser diode pumping, stable CW mode-locking operation was obtained by using a semiconductor saturable absorber mirror. The disordered crystal laser generated mode-locked pulses as short as 479 fs, with an average output power of 288 mW, and repetition rate of 99 MHz in 2 μm spectral region.</div>
</front>
</TEI>
</record>

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Diode-pumped mode-locked femtosecond Tm:CLNGG disordered crystal laser.

Diode-pumped mode-locked femtosecond Tm:CLNGG disordered crystal laser.

Source :

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri

Pour générer des pages wiki