Diode-pumped mode-locked femtosecond Tm:CLNGG disordered crystal laser.
Identifieur interne : 000567 ( Ncbi/Curation ); précédent : 000566; suivant : 000568Diode-pumped mode-locked femtosecond Tm:CLNGG disordered crystal laser.
Auteurs : J. Ma [République populaire de Chine] ; G Q Xie ; W L Gao ; P. Yuan ; L J Qian ; H H Yu ; H J Zhang ; J Y WangSource :
- Optics letters [ 1539-4794 ] ; 2012.
Descripteurs français
- KwdFr :
- MESH :
English descriptors
- KwdEn :
- MESH :
- chemical , chemistry : Calcium, Gallium, Lithium, Niobium, Thulium.
- Lasers, Solid-State, Optical Processes, Semiconductors, Time Factors.
Abstract
A diode-end-pumped passively mode-locked femtosecond Tm-doped calcium lithium niobium gallium garnet (Tm:CLNGG) disordered crystal laser was demonstrated for the first time to our knowledge. With a 790 nm laser diode pumping, stable CW mode-locking operation was obtained by using a semiconductor saturable absorber mirror. The disordered crystal laser generated mode-locked pulses as short as 479 fs, with an average output power of 288 mW, and repetition rate of 99 MHz in 2 μm spectral region.
PubMed: 22513691
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pubmed:22513691Le document en format XML
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<affiliation wicri:level="1"><nlm:affiliation>Department of Physics, Key Laboratory for Laser Plasmas (Ministry of Education), Shanghai Jiao Tong University, Shanghai 200240, China.</nlm:affiliation>
<country xml:lang="fr">République populaire de Chine</country>
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<author><name sortKey="Xie, G Q" sort="Xie, G Q" uniqKey="Xie G" first="G Q" last="Xie">G Q Xie</name>
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<author><name sortKey="Gao, W L" sort="Gao, W L" uniqKey="Gao W" first="W L" last="Gao">W L Gao</name>
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<author><name sortKey="Yuan, P" sort="Yuan, P" uniqKey="Yuan P" first="P" last="Yuan">P. Yuan</name>
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<author><name sortKey="Qian, L J" sort="Qian, L J" uniqKey="Qian L" first="L J" last="Qian">L J Qian</name>
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<author><name sortKey="Zhang, H J" sort="Zhang, H J" uniqKey="Zhang H" first="H J" last="Zhang">H J Zhang</name>
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<author><name sortKey="Wang, J Y" sort="Wang, J Y" uniqKey="Wang J" first="J Y" last="Wang">J Y Wang</name>
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<series><title level="j">Optics letters</title>
<idno type="eISSN">1539-4794</idno>
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<term>Gallium (chemistry)</term>
<term>Lasers, Solid-State</term>
<term>Lithium (chemistry)</term>
<term>Niobium (chemistry)</term>
<term>Optical Processes</term>
<term>Semiconductors</term>
<term>Thulium (chemistry)</term>
<term>Time Factors</term>
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<keywords scheme="KwdFr" xml:lang="fr"><term>Calcium ()</term>
<term>Facteurs temps</term>
<term>Gallium ()</term>
<term>Lasers à solide</term>
<term>Lithium ()</term>
<term>Niobium ()</term>
<term>Semiconducteurs</term>
<term>Thulium ()</term>
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<term>Lithium</term>
<term>Niobium</term>
<term>Thulium</term>
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<term>Optical Processes</term>
<term>Semiconductors</term>
<term>Time Factors</term>
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<term>Facteurs temps</term>
<term>Gallium</term>
<term>Lasers à solide</term>
<term>Lithium</term>
<term>Niobium</term>
<term>Semiconducteurs</term>
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<front><div type="abstract" xml:lang="en">A diode-end-pumped passively mode-locked femtosecond Tm-doped calcium lithium niobium gallium garnet (Tm:CLNGG) disordered crystal laser was demonstrated for the first time to our knowledge. With a 790 nm laser diode pumping, stable CW mode-locking operation was obtained by using a semiconductor saturable absorber mirror. The disordered crystal laser generated mode-locked pulses as short as 479 fs, with an average output power of 288 mW, and repetition rate of 99 MHz in 2 μm spectral region.</div>
</front>
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