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Fabrication and characterization of down-conversion materials in thin films for photovoltaic applications

Identifieur interne : 000676 ( Main/Merge ); précédent : 000675; suivant : 000677

Fabrication and characterization of down-conversion materials in thin films for photovoltaic applications

Auteurs : Sébastien Forissier [France]

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RBID : Hal:tel-00864054

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English descriptors

Abstract

Structural and luminescence properties of rare-earth-doped (thulium, terbium and ytterbium) thin films of yttrium oxide and titanium oxide were studied as a down-converting layer from near-UV to infrared for integration in solar cells to improve their yield. These thin films were synthesized by chemical vapor deposition at atmospheric pressure with organo-metallic precursors and assisted by aerosol (aerosol assisted MOCVD). The thin films were partially crystallized as deposited (400°C in the anatase phase for TiO2 , 540°C in the cubic phase for Y2O3). After annealing the crystallization is greatly improved and the rare-earth ion luminescence is obtained in both oxide matrices. The thulium emits in a large band centered around 800 nm and the ytterbium at 980 nm. The terbium emits mainly in the visible range. Excitation spectra showed that the photon absorption occurs in the matrix. In the TiO2 matrix a transfer rate from Tm to Yb of 20 % was measured for doping of 0,8 % for both rare-earth, which corresponds to the quenching limit. The overall measured yield is low, we showed that the probable reasons were the thin films’ lack of absorption to obtain the excitation of the sensitizer ion and a low efficiency of luminescence and down-conversion processes.

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Le document en format XML

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