Méthode Lanczos < Méthode MOCVD < Méthode Monte Carlo

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List of bibliographic references indexed by Méthode MOCVD

Number of relevant bibliographic references: 7.

Ident.	Authors (with country if any)	Title
000E17 (2010)	I-Hsiang Hung [Taïwan] ; Yu-Hsiang Lai [Taïwan] ; ZHE CHUAN FENG [Taïwan] ; Shalini Gupta [États-Unis] ; Tahir Zaidi [États-Unis] ; Ian Ferguson [États-Unis] ; WEIJIE LU [États-Unis]	Optical, Structural Properties and Experimental Procedures of GaGdN Grown by Metalorganic Chemical Vapor Deposition
001596 (2007)	L. Bodiou [France] ; A. Braud [France] ; C. Terpin [France] ; J. L. Doualan [France] ; R. Moncorge [France] ; K. Lorenz [Portugal] ; E. Alves [Portugal]	Spectroscopic investigation of implanted epilayers of Tm3+:GaN
001767 (2006)	T. Wojtowicz [France] ; F. Gloux [France] ; P. Ruterana [France] ; K. Lorenz [Portugal] ; E. Alves [Portugal]	TEM investigation of Tm implanted GaN, the influence of high temperature annealing
001770 (2006)	T. Wojtowicz [France] ; F. Gloux [France] ; P. Ruterana [France] ; G. Nouet [France] ; L. Bodiou [France] ; A. Braud [France] ; K. Lorenz [Portugal] ; E. Alves [Portugal]	Structure and role of ultrathin AlN layers for improving optical activation of rare earth implanted GaN
001806 (2006)	S. Hernandez [Royaume-Uni] ; R. Cusco [Espagne] ; L. Artus [Espagne] ; E. Nogales [Royaume-Uni] ; R. W. Martin [Royaume-Uni] ; K. P. O'Donnell [Royaume-Uni] ; G. Halambalakis [France] ; O. Briar [France] ; K. Lorenz [Portugal] ; E. Alves [Portugal]	Lattice order in thulium-doped GaN epilayers : In situ doping versus ion implantation
001C98 (2003)	S. D. Jackson [Australie] ; S. Mossman [Australie]	High-power diode-cladding-pumped Tm3+, Ho3+-doped silica fibre laser
002255 (2000)	Chin-Tsar Hsu [République populaire de Chine]	Growth of ZnS:Tm thin films by MOCVD

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