ThuliumV1, Main, Exploration, bibRecord, 001649

Ferromagnetism in transition-metal doped ZnO

Identifieur interne : 001649 ( Main/Exploration ); précédent : 001648; suivant : 001650

Ferromagnetism in transition-metal doped ZnO

Auteurs : S. J. Pearton [États-Unis] ; D. P. Norton [États-Unis] ; M. P. Ivill [États-Unis] ; A. F. Hebard [États-Unis] ; J. M. Zavada [États-Unis] ; W. M. Chen [Suède] ; I. A. Buyanova [Suède]

Source :

Journal of electronic materials [ 0361-5235 ] ; 2007.

RBID : Pascal:07-0361659

Descripteurs français

Pascal (Inist)
- Ferromagnétisme, Addition indium, Addition métal transition, Electronique spin, Haute température, Point Curie, Matériau ferromagnétique, Précipité, Article synthèse, Résultat expérimental, Métal transition, Dopage, Transistor effet champ, Zinc oxyde, Thulium sulfure, Champ intense, Effet champ magnétique, Polarisation optique, Polarisation spin, ZnO, S Tm, TmS, 8575, 7225, 7550, 8530T.
Wicri :
- topic : Dopage.

English descriptors

KwdEn :
- Curie point, Doping, Experimental result, Ferromagnetic materials, Ferromagnetism, Field effect transistors, High field, High temperature, Indium additions, Magnetic field effects, Optical polarization, Precipitates, Reviews, Spin polarization, Spintronics, Thulium sulfides, Transition element additions, Transition elements, Zinc oxides.

Abstract

ZnO is an attractive candidate for spintronics studies because of its potential for exhibiting high Curie temperatures and the relative lack of ferromagnetic second phases in the material. In this paper, we review experimental results on transition-metal (TM) doping of ZnO and the current state of theories for ferromagnetism. It is important to re-examine some of the earlier concepts for spintronics devices, such as the spin field-effect transistor, to account for the presence of the strong magnetic field that has deleterious effects. In some of these cases, the spin device appears to have no advantage relative to the conventional charge-control electronic analog. We have been unable to detect optical spin polarization in ZnO.

Affiliations:

Suède, États-Unis

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Le document en format XML

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<term>Magnetic field effects</term>
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<term>Addition indium</term>
<term>Addition métal transition</term>
<term>Electronique spin</term>
<term>Haute température</term>
<term>Point Curie</term>
<term>Matériau ferromagnétique</term>
<term>Précipité</term>
<term>Article synthèse</term>
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<term>Métal transition</term>
<term>Dopage</term>
<term>Transistor effet champ</term>
<term>Zinc oxyde</term>
<term>Thulium sulfure</term>
<term>Champ intense</term>
<term>Effet champ magnétique</term>
<term>Polarisation optique</term>
<term>Polarisation spin</term>
<term>ZnO</term>
<term>S Tm</term>
<term>TmS</term>
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<term>7225</term>
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<front><div type="abstract" xml:lang="en">ZnO is an attractive candidate for spintronics studies because of its potential for exhibiting high Curie temperatures and the relative lack of ferromagnetic second phases in the material. In this paper, we review experimental results on transition-metal (TM) doping of ZnO and the current state of theories for ferromagnetism. It is important to re-examine some of the earlier concepts for spintronics devices, such as the spin field-effect transistor, to account for the presence of the strong magnetic field that has deleterious effects. In some of these cases, the spin device appears to have no advantage relative to the conventional charge-control electronic analog. We have been unable to detect optical spin polarization in ZnO.</div>
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Ferromagnetism in transition-metal doped ZnO

Ferromagnetism in transition-metal doped ZnO

Source :

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

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