Optical, Structural Properties and Experimental Procedures of GaGdN Grown by Metalorganic Chemical Vapor Deposition
Identifieur interne : 000E17 ( Main/Exploration ); précédent : 000E16; suivant : 000E18Optical, Structural Properties and Experimental Procedures of GaGdN Grown by Metalorganic Chemical Vapor Deposition
Auteurs : I-Hsiang Hung [Taïwan] ; Yu-Hsiang Lai [Taïwan] ; ZHE CHUAN FENG [Taïwan] ; Shalini Gupta [États-Unis] ; Tahir Zaidi [États-Unis] ; Ian Ferguson [États-Unis] ; WEIJIE LU [États-Unis]Source :
- Proceedings of SPIE, the International Society for Optical Engineering [ 0277-786X ] ; 2010.
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Abstract
Rare earth (RE) elements are promising alternatives to transition metals (TMs) for use in developing a dilute magnetic semiconductor (DMS) for spintronics applications. Instead of relying on the d-shell electrons of the TMs as the magnetic element, the 4f electrons from the RE elements are used. The 4f RE elements can have larger magnetic moments as compared to 3d TMs, because the 4f orbits are localized and the direct coupling between the 4f ions is weak. There have been several reports of using RE elements for optoelectronic applications, as their various internal f-shell electronic transitions vary in energy from infrared to visible.
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i1="04"><s1>Department of Chemistry, Fisk University</s1><s2>Nashville, TN 37208</s2><s3>USA</s3><sZ>7 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Nashville, TN 37208</wicri:noRegion></affiliation></author></analytic><series><title level="j" type="main">Proceedings of SPIE, the International Society for Optical Engineering</title><title level="j" type="abbreviated">Proc. SPIE Int. Soc. Opt. Eng.</title><idno type="ISSN">0277-786X</idno><imprint><date when="2010">2010</date></imprint></series></biblStruct></sourceDesc><seriesStmt><title level="j" type="main">Proceedings of SPIE, the International Society for Optical Engineering</title><title level="j" type="abbreviated">Proc. SPIE Int. Soc. Opt. Eng.</title><idno type="ISSN">0277-786X</idno></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Electronic transition</term><term>Lanthanide</term><term>MOCVD</term><term>Magnetic moment</term><term>Microelectronic fabrication</term><term>Optical characteristic</term><term>Optoelectronics</term><term>Semimagnetic semiconductor</term><term>Spintronics</term><term>Thulium sulfides</term><term>Transition energy</term><term>Transition metal</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Caractéristique optique</term><term>Méthode MOCVD</term><term>Electronique spin</term><term>Moment magnétique</term><term>Optoélectronique</term><term>Transition électronique</term><term>Energie transition</term><term>Lanthanide</term><term>Métal transition</term><term>Sulfure de thulium</term><term>Semiconducteur semimagnétique</term><term>Fabrication microélectronique</term><term>TmS</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Rare earth (RE) elements are promising alternatives to transition metals (TMs) for use in developing a dilute magnetic semiconductor (DMS) for spintronics applications. Instead of relying on the d-shell electrons of the TMs as the magnetic element, the 4f electrons from the RE elements are used. The 4f RE elements can have larger magnetic moments as compared to 3d TMs, because the 4f orbits are localized and the direct coupling between the 4f ions is weak. There have been several reports of using RE elements for optoelectronic applications, as their various internal f-shell electronic transitions vary in energy from infrared to visible.</div></front></TEI><affiliations><list><country><li>Taïwan</li><li>États-Unis</li></country><region><li>Géorgie (États-Unis)</li></region><settlement><li>Atlanta</li></settlement><orgName><li>Georgia Institute of Technology</li></orgName></list><tree><country name="Taïwan"><noRegion><name sortKey="Hung, I Hsiang" sort="Hung, I Hsiang" uniqKey="Hung I" first="I-Hsiang" last="Hung">I-Hsiang Hung</name></noRegion><name sortKey="Lai, Yu Hsiang" sort="Lai, Yu Hsiang" uniqKey="Lai Y" first="Yu-Hsiang" last="Lai">Yu-Hsiang Lai</name><name sortKey="Zhe Chuan Feng" sort="Zhe Chuan Feng" uniqKey="Zhe Chuan Feng" last="Zhe Chuan Feng">ZHE CHUAN FENG</name></country><country name="États-Unis"><region name="Géorgie (États-Unis)"><name sortKey="Gupta, Shalini" sort="Gupta, Shalini" uniqKey="Gupta S" first="Shalini" last="Gupta">Shalini Gupta</name></region><name sortKey="Ferguson, Ian" sort="Ferguson, Ian" uniqKey="Ferguson I" first="Ian" last="Ferguson">Ian Ferguson</name><name sortKey="Weijie Lu" sort="Weijie Lu" uniqKey="Weijie Lu" last="Weijie Lu">WEIJIE LU</name><name sortKey="Zaidi, Tahir" sort="Zaidi, Tahir" uniqKey="Zaidi T" first="Tahir" last="Zaidi">Tahir Zaidi</name></country></tree></affiliations></record>Pour manipuler ce document sous Unix (Dilib)
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