ThuliumV1, Main, Exploration, bibRecord, 000E15

Photoluminescence study of thulium-doped silicon substrates for light emitting diodes

Identifieur interne : 000E15 ( Main/Exploration ); précédent : 000E14; suivant : 000E16

Photoluminescence study of thulium-doped silicon substrates for light emitting diodes

Auteurs : M. A. Lourenco [Royaume-Uni] ; C. Opoku [Royaume-Uni] ; R. M. Gwilliam [Royaume-Uni] ; K. P. Homewood [Royaume-Uni]

Source :

Optical materials : (Amsterdam) [ 0925-3467 ] ; 2010.

RBID : Pascal:11-0191911

Descripteurs français

Pascal (Inist)
- Photoluminescence, Luminescence, Electroluminescence, Diode électroluminescente, Etude expérimentale, Procédé fabrication, Etat fondamental, Matériau dopé, Codopage, Matériau optique, Addition thulium, Thulium, Silicium, Substrat Silicium, 4270, 8560J.

English descriptors

KwdEn :
- Codoping, Doped materials, Electroluminescence, Experimental study, Ground states, Light emitting diodes, Luminescence, Manufacturing processes, Optical materials, Photoluminescence, Silicon, Thulium, Thulium additions.

Abstract

Photoluminescence in the 1.2-1.35 μm range has been observed in silicon substrates incorporating thulium in the trivalent Tm³⁺ state and co-doped with boron. The results showed eight sharp lines at 1211.5, 1231.0, 1250.8, 1269.3, 1283.8, 1290.6, 1311.3 and 1326.0 nm, corresponding to known internal Tm³⁺ transitions in the manifold from the ³H₅ to the ³H₆ ground states. The luminescence was strongly dependent on the sample fabrication processes. In this paper we will discuss the influence of Tm implantation parameters and post-implant annealing conditions on the photoluminescence response of silicon doped with Tm³⁺.

Affiliations:

Royaume-Uni

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Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Photoluminescence study of thulium-doped silicon substrates for light emitting diodes</title>
<author><name sortKey="Lourenco, M A" sort="Lourenco, M A" uniqKey="Lourenco M" first="M. A." last="Lourenco">M. A. Lourenco</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Advanced Technology Institute, Faculty of Engineering and Physical Sciences, University of Surrey</s1>
<s2>Guildford, Surrey GU2 7XH</s2>
<s3>GBR</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Royaume-Uni</country>
<wicri:noRegion>Guildford, Surrey GU2 7XH</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Opoku, C" sort="Opoku, C" uniqKey="Opoku C" first="C." last="Opoku">C. Opoku</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Advanced Technology Institute, Faculty of Engineering and Physical Sciences, University of Surrey</s1>
<s2>Guildford, Surrey GU2 7XH</s2>
<s3>GBR</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Royaume-Uni</country>
<wicri:noRegion>Guildford, Surrey GU2 7XH</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Gwilliam, R M" sort="Gwilliam, R M" uniqKey="Gwilliam R" first="R. M." last="Gwilliam">R. M. Gwilliam</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Advanced Technology Institute, Faculty of Engineering and Physical Sciences, University of Surrey</s1>
<s2>Guildford, Surrey GU2 7XH</s2>
<s3>GBR</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Royaume-Uni</country>
<wicri:noRegion>Guildford, Surrey GU2 7XH</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Homewood, K P" sort="Homewood, K P" uniqKey="Homewood K" first="K. P." last="Homewood">K. P. Homewood</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Advanced Technology Institute, Faculty of Engineering and Physical Sciences, University of Surrey</s1>
<s2>Guildford, Surrey GU2 7XH</s2>
<s3>GBR</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Royaume-Uni</country>
<wicri:noRegion>Guildford, Surrey GU2 7XH</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="wicri:source">INIST</idno>
<idno type="inist">11-0191911</idno>
<date when="2010">2010</date>
<idno type="stanalyst">PASCAL 11-0191911 INIST</idno>
<idno type="RBID">Pascal:11-0191911</idno>
<idno type="wicri:Area/Pascal/Corpus">000264</idno>
<idno type="wicri:Area/Pascal/Curation">000264</idno>
<idno type="wicri:Area/Pascal/Checkpoint">000313</idno>
<idno type="wicri:explorRef" wicri:stream="Pascal" wicri:step="Checkpoint">000313</idno>
<idno type="wicri:doubleKey">0925-3467:2010:Lourenco M:photoluminescence:study:of</idno>
<idno type="wicri:Area/Main/Merge">000E30</idno>
<idno type="wicri:Area/Main/Curation">000E15</idno>
<idno type="wicri:Area/Main/Exploration">000E15</idno>
</publicationStmt>
<sourceDesc><biblStruct><analytic><title xml:lang="en" level="a">Photoluminescence study of thulium-doped silicon substrates for light emitting diodes</title>
<author><name sortKey="Lourenco, M A" sort="Lourenco, M A" uniqKey="Lourenco M" first="M. A." last="Lourenco">M. A. Lourenco</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Advanced Technology Institute, Faculty of Engineering and Physical Sciences, University of Surrey</s1>
<s2>Guildford, Surrey GU2 7XH</s2>
<s3>GBR</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Royaume-Uni</country>
<wicri:noRegion>Guildford, Surrey GU2 7XH</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Opoku, C" sort="Opoku, C" uniqKey="Opoku C" first="C." last="Opoku">C. Opoku</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Advanced Technology Institute, Faculty of Engineering and Physical Sciences, University of Surrey</s1>
<s2>Guildford, Surrey GU2 7XH</s2>
<s3>GBR</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Royaume-Uni</country>
<wicri:noRegion>Guildford, Surrey GU2 7XH</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Gwilliam, R M" sort="Gwilliam, R M" uniqKey="Gwilliam R" first="R. M." last="Gwilliam">R. M. Gwilliam</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Advanced Technology Institute, Faculty of Engineering and Physical Sciences, University of Surrey</s1>
<s2>Guildford, Surrey GU2 7XH</s2>
<s3>GBR</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Royaume-Uni</country>
<wicri:noRegion>Guildford, Surrey GU2 7XH</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Homewood, K P" sort="Homewood, K P" uniqKey="Homewood K" first="K. P." last="Homewood">K. P. Homewood</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Advanced Technology Institute, Faculty of Engineering and Physical Sciences, University of Surrey</s1>
<s2>Guildford, Surrey GU2 7XH</s2>
<s3>GBR</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Royaume-Uni</country>
<wicri:noRegion>Guildford, Surrey GU2 7XH</wicri:noRegion>
</affiliation>
</author>
</analytic>
<series><title level="j" type="main">Optical materials : (Amsterdam)</title>
<title level="j" type="abbreviated">Opt. mater. : (Amst.)</title>
<idno type="ISSN">0925-3467</idno>
<imprint><date when="2010">2010</date>
</imprint>
</series>
</biblStruct>
</sourceDesc>
<seriesStmt><title level="j" type="main">Optical materials : (Amsterdam)</title>
<title level="j" type="abbreviated">Opt. mater. : (Amst.)</title>
<idno type="ISSN">0925-3467</idno>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Codoping</term>
<term>Doped materials</term>
<term>Electroluminescence</term>
<term>Experimental study</term>
<term>Ground states</term>
<term>Light emitting diodes</term>
<term>Luminescence</term>
<term>Manufacturing processes</term>
<term>Optical materials</term>
<term>Photoluminescence</term>
<term>Silicon</term>
<term>Thulium</term>
<term>Thulium additions</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Photoluminescence</term>
<term>Luminescence</term>
<term>Electroluminescence</term>
<term>Diode électroluminescente</term>
<term>Etude expérimentale</term>
<term>Procédé fabrication</term>
<term>Etat fondamental</term>
<term>Matériau dopé</term>
<term>Codopage</term>
<term>Matériau optique</term>
<term>Addition thulium</term>
<term>Thulium</term>
<term>Silicium</term>
<term>Substrat Silicium</term>
<term>4270</term>
<term>8560J</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Photoluminescence in the 1.2-1.35 μm range has been observed in silicon substrates incorporating thulium in the trivalent Tm<sup>3+</sup>
 state and co-doped with boron. The results showed eight sharp lines at 1211.5, 1231.0, 1250.8, 1269.3, 1283.8, 1290.6, 1311.3 and 1326.0 nm, corresponding to known internal Tm<sup>3+</sup>
 transitions in the manifold from the <sup>3</sup>
H<sub>5</sub>
 to the <sup>3</sup>
H<sub>6</sub>
 ground states. The luminescence was strongly dependent on the sample fabrication processes. In this paper we will discuss the influence of Tm implantation parameters and post-implant annealing conditions on the photoluminescence response of silicon doped with Tm<sup>3+</sup>
.</div>
</front>
</TEI>
<affiliations><list><country><li>Royaume-Uni</li>
</country>
</list>
<tree><country name="Royaume-Uni"><noRegion><name sortKey="Lourenco, M A" sort="Lourenco, M A" uniqKey="Lourenco M" first="M. A." last="Lourenco">M. A. Lourenco</name>
</noRegion>
<name sortKey="Gwilliam, R M" sort="Gwilliam, R M" uniqKey="Gwilliam R" first="R. M." last="Gwilliam">R. M. Gwilliam</name>
<name sortKey="Homewood, K P" sort="Homewood, K P" uniqKey="Homewood K" first="K. P." last="Homewood">K. P. Homewood</name>
<name sortKey="Opoku, C" sort="Opoku, C" uniqKey="Opoku C" first="C." last="Opoku">C. Opoku</name>
</country>
</tree>
</affiliations>
</record>

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Photoluminescence study of thulium-doped silicon substrates for light emitting diodes

Photoluminescence study of thulium-doped silicon substrates for light emitting diodes

Source :

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri