Local structural analysis of a-SiCx:H films formed by decomposition of tetramethylsilane in microwave discharge flow of Ar
Identifieur interne : 000B41 ( Main/Curation ); précédent : 000B40; suivant : 000B42Local structural analysis of a-SiCx:H films formed by decomposition of tetramethylsilane in microwave discharge flow of Ar
Auteurs : Akira Wada [Japon] ; Takeshi Ogaki [Japon] ; Masahito Niibe [Japon] ; Masahito Tagawa [Japon] ; Hidetoshi Saitoh [Japon] ; Kazuhiro Kanda [Japon] ; Haruhiko Ito [Japon]Source :
- Diamond and related materials [ 0925-9635 ] ; 2011.
Descripteurs français
- Pascal (Inist)
- Analyse structurale, Couche mince, Tension polarisation, Dureté, Propriété mécanique, Carbone, Absorption RX, Structure fine, Domaine élastique, Spectre photoélectron RX, Analyse quantitative, Structure électronique, Mécanisme croissance, Matériau amorphe hydrogéné, Sulfure de thulium, a-SiCx, a-Si:H, S Tm, TmS, 6860B, 7320, 7320A, 6855A.
- Wicri :
- topic : Carbone, Analyse quantitative.
English descriptors
- KwdEn :
Abstract
Hydrogenated amorphous silicon carbide (a-SiCx:H) films were prepared by the decomposition of tetramethylsilane (TMS) with microwave discharge flow of Ar. When radio-frequency (RF) bias voltage (-VRF) was applied to the substrate, the film hardness increased as (2.39±1.12)-(9.15±0.55) GPa for - VRF = 0-100 V. The a-SiCx:H films prepared under various - VRF conditions were analyzed by the carbon-K near edge X-ray absorption fine structure (NEXAFS), by the elastic recoil detection analysis (ERDA), and by the X-ray photoelectron spectroscopy (XPS). From a quantitative analysis of NEXAFS, the sp2/(sp2+sp3) ratios of C atoms were evaluated as 67.9±2.0, 55.4±2.7, and 51.7±0.7% for -VRF=0, 60, and 100 V, respectively. From ERDA, hydrogen content of the film prepared under the condition of -VRF=100 V was found to decrease 28% comparing with that under - VRF = 0V. It is suggested that the cause of the increase of the film hardness when applying - VRF is predominantly the growth of the sp3-hybridized structure of C atoms accompanied by the decrease of hydrogen terminations.
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aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Nagaoka</wicri:noRegion></affiliation></author><author><name sortKey="Niibe, Masahito" sort="Niibe, Masahito" uniqKey="Niibe M" first="Masahito" last="Niibe">Masahito Niibe</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Mechanical Engineering, Faculty of Engineering, Kobe University</s1><s2>Kobe</s2><s3>JPN</s3><sZ>3 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Kobe</wicri:noRegion></affiliation></author><author><name sortKey="Tagawa, Masahito" sort="Tagawa, Masahito" uniqKey="Tagawa M" first="Masahito" last="Tagawa">Masahito Tagawa</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Laboratory of Advanced Science and Technology for Industry, University of Hyogo</s1><s2>Hyogo</s2><s3>JPN</s3><sZ>4 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Hyogo</wicri:noRegion></affiliation></author><author><name sortKey="Saitoh, Hidetoshi" 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type="wicri:Area/Main/Curation">000B41</idno></publicationStmt><sourceDesc><biblStruct><analytic><title xml:lang="en" level="a">Local structural analysis of a-SiC<sub>x</sub>:H films formed by decomposition of tetramethylsilane in microwave discharge flow of Ar</title><author><name sortKey="Wada, Akira" sort="Wada, Akira" uniqKey="Wada A" first="Akira" last="Wada">Akira Wada</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Materials Science and Technology, Nagaoka University of Technology</s1><s2>Nagaoka</s2><s3>JPN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Nagaoka</wicri:noRegion></affiliation></author><author><name sortKey="Ogaki, Takeshi" sort="Ogaki, Takeshi" uniqKey="Ogaki T" first="Takeshi" last="Ogaki">Takeshi Ogaki</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Materials Science and Technology, Nagaoka University of Technology</s1><s2>Nagaoka</s2><s3>JPN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Nagaoka</wicri:noRegion></affiliation></author><author><name sortKey="Niibe, Masahito" sort="Niibe, Masahito" uniqKey="Niibe M" first="Masahito" last="Niibe">Masahito Niibe</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Mechanical Engineering, Faculty of Engineering, Kobe University</s1><s2>Kobe</s2><s3>JPN</s3><sZ>3 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Kobe</wicri:noRegion></affiliation></author><author><name sortKey="Tagawa, Masahito" sort="Tagawa, Masahito" uniqKey="Tagawa M" first="Masahito" last="Tagawa">Masahito Tagawa</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Laboratory of Advanced Science and Technology for Industry, University of Hyogo</s1><s2>Hyogo</s2><s3>JPN</s3><sZ>4 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Hyogo</wicri:noRegion></affiliation></author><author><name sortKey="Saitoh, Hidetoshi" sort="Saitoh, Hidetoshi" uniqKey="Saitoh H" first="Hidetoshi" last="Saitoh">Hidetoshi Saitoh</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Materials Science and Technology, Nagaoka University of Technology</s1><s2>Nagaoka</s2><s3>JPN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Nagaoka</wicri:noRegion></affiliation></author><author><name sortKey="Kanda, Kazuhiro" sort="Kanda, Kazuhiro" uniqKey="Kanda K" first="Kazuhiro" last="Kanda">Kazuhiro Kanda</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Mechanical Engineering, Faculty of Engineering, Kobe University</s1><s2>Kobe</s2><s3>JPN</s3><sZ>3 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Kobe</wicri:noRegion></affiliation></author><author><name sortKey="Ito, Haruhiko" sort="Ito, Haruhiko" uniqKey="Ito H" first="Haruhiko" last="Ito">Haruhiko Ito</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Materials Science and Technology, Nagaoka University of Technology</s1><s2>Nagaoka</s2><s3>JPN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Nagaoka</wicri:noRegion></affiliation></author></analytic><series><title level="j" type="main">Diamond and related materials</title><title level="j" type="abbreviated">Diam. relat. mater.</title><idno type="ISSN">0925-9635</idno><imprint><date when="2011">2011</date></imprint></series></biblStruct></sourceDesc><seriesStmt><title level="j" type="main">Diamond and related materials</title><title level="j" type="abbreviated">Diam. relat. mater.</title><idno type="ISSN">0925-9635</idno></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Amorphous hydrogenated material</term><term>Bias voltage</term><term>Carbon</term><term>Elastic analysis</term><term>Electronic structure</term><term>Fine structure</term><term>Growth mechanism</term><term>Hardness</term><term>Mechanical properties</term><term>Quantitative chemical analysis</term><term>Structural analysis</term><term>Thin films</term><term>Thulium sulfides</term><term>X-ray absorption</term><term>X-ray photoelectron spectra</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Analyse structurale</term><term>Couche mince</term><term>Tension polarisation</term><term>Dureté</term><term>Propriété mécanique</term><term>Carbone</term><term>Absorption RX</term><term>Structure fine</term><term>Domaine élastique</term><term>Spectre photoélectron RX</term><term>Analyse quantitative</term><term>Structure électronique</term><term>Mécanisme croissance</term><term>Matériau amorphe hydrogéné</term><term>Sulfure de thulium</term><term>a-SiCx</term><term>a-Si:H</term><term>S Tm</term><term>TmS</term><term>6860B</term><term>7320</term><term>7320A</term><term>6855A</term></keywords><keywords scheme="Wicri" type="topic" xml:lang="fr"><term>Carbone</term><term>Analyse quantitative</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Hydrogenated amorphous silicon carbide (a-SiC<sub>x</sub>:H) films were prepared by the decomposition of tetramethylsilane (TMS) with microwave discharge flow of Ar. When radio-frequency (RF) bias voltage (-V<sub>RF</sub>) was applied to the substrate, the film hardness increased as (2.39±1.12)-(9.15±0.55) GPa for - V<sub>RF</sub> = 0-100 V. The a-SiC<sub>x</sub>:H films prepared under various - V<sub>RF</sub> conditions were analyzed by the carbon-K near edge X-ray absorption fine structure (NEXAFS), by the elastic recoil detection analysis (ERDA), and by the X-ray photoelectron spectroscopy (XPS). From a quantitative analysis of NEXAFS, the sp<sup>2</sup>/(sp<sup>2</sup>+sp<sup>3</sup>) ratios of C atoms were evaluated as 67.9±2.0, 55.4±2.7, and 51.7±0.7% for -V<sub>RF</sub>=0, 60, and 100 V, respectively. From ERDA, hydrogen content of the film prepared under the condition of -<sup>V</sup><sub>RF</sub>=100 V was found to decrease 28% comparing with that under - V<sub>RF</sub> = 0V. It is suggested that the cause of the increase of the film hardness when applying - V<sub>RF</sub> is predominantly the growth of the sp<sup>3</sup>-hybridized structure of C atoms accompanied by the decrease of hydrogen terminations.</div></front></TEI></record>Pour manipuler ce document sous Unix (Dilib)
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