List of bibliographic references
Number of relevant bibliographic references: 18.
Ident. | Authors (with country if any) | Title |
---|
000560 (1989) |
B. Malaman [France] ; G. Venturini [France] ; M. François [France] ; B. Roques [France] | Effects de la taille des terres rares sur les structures de type YIrGe2. Repartition atomique dans LaTmIr2Ge4 |
000707 (1996) |
G. Venturini [France] ; B. Malaman [France] ; E. Ressouche [France] | Magnetic ordering in ternary RMn2Ge2 compounds (R Tb, Ho, Er, Tm, Lu) from neutron diffraction study |
000993 (1989) |
B. Malaman [France] ; G. Venturini [France] ; B. Roques [France] | Structure cristalline de Tm4Mn4Sn7, le premier stannure isotype de Zr4Co4Ge7 |
000994 (2000) |
G. Venturini [France] ; R. Welter [France] | Single crystal refinement of tetragonal Tm3(Ga,Ge)5 with anti-Cr5B3 structure |
000C82 (2001) |
G. Venturini [France] ; A. Vernière [France] ; B. Malaman [France] | Neutron diffraction study of HfFe6Ge6-type TmMn6Ge6− x Ga x compounds ( x =0.2, 0.4, 0.6, 0.8 and 1.0) |
001325 (1993) |
G. Venturini [France] ; R. Welter [France] ; B. Malaman [France] | Room temperature variation in the threshold fields in R x Y 1 − x Mn 6 Sn 6 (R CeNd, Sm, GdHo) solid solutions |
001873 (2009) |
Laura K. Perry ; D. H. Ryan ; G. Venturini ; B. Malaman | ChemInform Abstract: Hexagonal TmMn6Sn4Ge2 Investigation by Neutron Diffraction and 119Sn Moessbauer Spectroscopy. |
001B28 (2000) |
G. Venturini [France] | Magnetic study of HfFe6Ge6-type solid solutions TbMn6Ge6− x Ga x (0.05≤ x ≤0.60) and TmMn6Ge6− x Ga x (0.2≤ x ≤1.0) |
001D12 (2000) |
G. Venturini ; R. Welter | ChemInform Abstract: Single Crystal Refinement of Tetragonal Tm3(Ga,Ge)5 with anti‐Cr5B3 Structure. |
002390 (1991) |
G. Venturini [France] ; B. Chafik El Idrissi [France] ; B. Malaman [France] | Magnetic properties of RMn6Sn6 (R = Sc, Y, Gd−Tm, Lu) compounds with HfFe6Ge6 type structure |
002542 (2001) |
G. Venturini [France] | Magnetic study of HfFe6Ge6-type solid solutions RMn6Ge6− x Ga x (R=Dy, Ho, Er; 0.1≤ x ≤1.0) |
002B44 (2000) |
G. Venturini | ChemInform Abstract: Orthorhombic TmGe≈1.9, with a ZrSi2—ErGe1.83 Intergrowth Structure. |
002C26 (1990) |
G. Venturini [France] ; B. Malaman [France] | Crystal structure of Y3Pt4Ge6: An intergrowth of BaAl4 and YIrGe2 slabs |
002F11 (2000) |
G. Venturini [France] | Orthorhombic TmGe≈1.9, with a ZrSi2–ErGe1.83 intergrowth structure |
003113 (1998) |
N. M Norlidah [France] ; I. Ijjaali [France] ; G. Venturini [France] ; B. Malaman [France] | Crystal structure of YbMn∼0.17Si∼1.83: a new AlB2–BaAl4 intergrowth compound |
003197 (2001) |
C. Lefevre [France] ; G. Venturini [France] ; B. Malaman [France] | Re-entrant ferrimagnetism in HfFe6Ge6-type TmMn6Sn6− x In x (0.2≤ x ≤1.6) and ErMn6Sn6− x In x (0.1≤ x ≤1.0) solid solutions |
003251 (1999) |
G. Venturini [France] ; I. Ijjaali [France] ; B. Malaman [France] | Vacancy ordering in AlB2-type RGe2− x compounds (R=Y, Nd, Sm, Gd–Lu) |
003551 (1989) |
G. Venturini [France] ; B. Malaman [France] ; B. Roques [France] | Distribution atomique dans des alliages de type Sc5Co4Si10: (Lu, Sc)5Ir4Si10, (Y, Sc)5Ir4Si10, (Y, Tm)5Os4Ge10, (Ca, Lu)5Rh4Ge10 et (La, Y)5Rh4Sn10 |
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