Growth and Properties of a Thulium, Holmium‐Codoped LuLiF4 Single Crystal
Identifieur interne : 003130 ( Istex/Curation ); précédent : 003129; suivant : 003131Growth and Properties of a Thulium, Holmium‐Codoped LuLiF4 Single Crystal
Auteurs : Fangli Jing [Japon] ; Kiyoshi Shimamura [Japon] ; Encarnaci N G. Víllora [Japon] ; Andrey Medvedev [Japon] ; Kenji Kitamura [Japon] ; Kazuhiro Asai [Japon] ; Atsushi Sato [Japon]Source :
- Journal of the American Ceramic Society [ 0002-7820 ] ; 2008-01.
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Abstract
LuLiF4 single crystals codoped with thulium (Tm) and holmium (Ho) were successfully grown by the Czochralski method. The excellent laser performance, in terms of highest slope efficiency, and highest optical‐to‐optical efficiency and lower laser threshold, was studied in comparison with 5% Tm, 0.5% Ho‐codoped YLiF4, and Lu3Al5O12 under the same conditions.
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DOI: 10.1111/j.1551-2916.2007.02008.x
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Víllora</name><affiliation wicri:level="1"><mods:affiliation>National Institute for Materials Science, Tsukuba 305‐0044, Japan</mods:affiliation><country xml:lang="fr">Japon</country><wicri:regionArea>National Institute for Materials Science, Tsukuba 305‐0044</wicri:regionArea></affiliation></author><author><name sortKey="Medvedev, Andrey" sort="Medvedev, Andrey" uniqKey="Medvedev A" first="Andrey" last="Medvedev">Andrey Medvedev</name><affiliation wicri:level="1"><mods:affiliation>National Institute for Materials Science, Tsukuba 305‐0044, Japan</mods:affiliation><country xml:lang="fr">Japon</country><wicri:regionArea>National Institute for Materials Science, Tsukuba 305‐0044</wicri:regionArea></affiliation></author><author><name sortKey="Kitamura, Kenji" sort="Kitamura, Kenji" uniqKey="Kitamura K" first="Kenji" last="Kitamura">Kenji Kitamura</name><affiliation wicri:level="1"><mods:affiliation>National Institute for Materials Science, Tsukuba 305‐0044, Japan</mods:affiliation><country xml:lang="fr">Japon</country><wicri:regionArea>National Institute for Materials Science, Tsukuba 305‐0044</wicri:regionArea></affiliation></author><author><name sortKey="Asai, Kazuhiro" sort="Asai, Kazuhiro" uniqKey="Asai K" first="Kazuhiro" last="Asai">Kazuhiro Asai</name><affiliation wicri:level="1"><mods:affiliation>Tohoku Institute of Technology, Sendai 982‐8577, Japan</mods:affiliation><country xml:lang="fr">Japon</country><wicri:regionArea>Tohoku Institute of Technology, Sendai 982‐8577</wicri:regionArea></affiliation></author><author><name sortKey="Sato, Atsushi" sort="Sato, Atsushi" uniqKey="Sato A" first="Atsushi" last="Sato">Atsushi Sato</name><affiliation wicri:level="1"><mods:affiliation>Tohoku Institute of Technology, Sendai 982‐8577, Japan</mods:affiliation><country xml:lang="fr">Japon</country><wicri:regionArea>Tohoku Institute of Technology, Sendai 982‐8577</wicri:regionArea></affiliation></author></analytic><monogr></monogr><series><title level="j" type="main">Journal of the American Ceramic Society</title><title level="j" type="alt">JOURNAL OF AMERICAN CERAMIC SOCIETY</title><idno type="ISSN">0002-7820</idno><idno type="eISSN">1551-2916</idno><imprint><biblScope unit="vol">91</biblScope><biblScope unit="issue">1</biblScope><biblScope unit="page" from="296">296</biblScope><biblScope unit="page" to="298">298</biblScope><biblScope unit="page-count">3</biblScope><publisher>Blackwell Publishing Inc</publisher><pubPlace>Malden, USA</pubPlace><date type="published" when="2008-01">2008-01</date></imprint><idno type="ISSN">0002-7820</idno></series></biblStruct></sourceDesc><seriesStmt><idno type="ISSN">0002-7820</idno></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption coefficienct</term><term>Absorption spectra</term><term>Crystal growth</term><term>Czochralski method</term><term>Duct</term><term>Fukuda</term><term>Highest slope</term><term>Holmium</term><term>Laser</term><term>Laser performance</term><term>Lens duct</term><term>Luag</term><term>Lulif4</term><term>Lulif4 luag ylif4</term><term>Output energy</term><term>Room temperature</term><term>Same conditions</term><term>Shimamura</term><term>Single crystal</term><term>Threshold energy</term><term>Thulium</term><term>Ylif4</term></keywords><keywords scheme="Teeft" xml:lang="en"><term>Absorption coefficienct</term><term>Absorption spectra</term><term>Crystal growth</term><term>Czochralski method</term><term>Duct</term><term>Fukuda</term><term>Highest slope</term><term>Holmium</term><term>Laser</term><term>Laser performance</term><term>Lens duct</term><term>Luag</term><term>Lulif4</term><term>Lulif4 luag ylif4</term><term>Output energy</term><term>Room temperature</term><term>Same conditions</term><term>Shimamura</term><term>Single crystal</term><term>Threshold energy</term><term>Thulium</term><term>Ylif4</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract">LuLiF4 single crystals codoped with thulium (Tm) and holmium (Ho) were successfully grown by the Czochralski method. The excellent laser performance, in terms of highest slope efficiency, and highest optical‐to‐optical efficiency and lower laser threshold, was studied in comparison with 5% Tm, 0.5% Ho‐codoped YLiF4, and Lu3Al5O12 under the same conditions.</div></front></TEI></record>Pour manipuler ce document sous Unix (Dilib)
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