Analysis of factors influencing the threshold current of PbSnSe injection heterolasers
Identifieur interne : 000309 ( Istex/Curation ); précédent : 000308; suivant : 000310Analysis of factors influencing the threshold current of PbSnSe injection heterolasers
Auteurs :Source :
- Soviet Journal of Quantum Electronics [ 0049-1748 ] ; 1982-11-30.
English descriptors
- KwdEn :
- Absorption coefficient, Active layer, Active layer thickness, Active region, American institute, Asymmetry, Carrier densities, Carrier density, Confinement parameter, Continuous curves, Critical value, Different carrier densities, Diffusion length, Effective mass, Electrophysical properties, Emitter, Epitaxy, Excimer laser radiation, Experimental values, Gain distribution, Heteroj unction, Heterojunctions, Heterostructure, High values, Hypothetical energy band diagram, Inhomogeneity, Injection heterolasers, Internal quantum efficiency, Kvantovaya elektron, Laser, Laser radiation, Liquid epitaxy, Liquid epitaxy method, Metal vapors, Minimum threshold, Minimum values, Minority carriers, Optical confinement parameter, Optimal thickness, Pacs numbers, Pbse, Pbse emitter, Phys, Quantum electron, Radiative lifetime, Recombination, Refractive, Refractive index, Refractive indices, Region thickness, Region thicknesses, Shotov, Simple waveguide model, Solid solutions, Square centimeter, Stokes shift, Surface recombination processes, Surface recombination velocity, Tekh, Temperature dependence, Temperature dependences, Threshold currents, Type pbse, Vacuum epitaxy, Vacuum epitaxy methods, Waveguide, Waveguide parameters, Waveguide properties, Waveguide thickness.
- Teeft :
- Absorption coefficient, Active layer, Active layer thickness, Active region, American institute, Asymmetry, Carrier densities, Carrier density, Confinement parameter, Continuous curves, Critical value, Different carrier densities, Diffusion length, Effective mass, Electrophysical properties, Emitter, Epitaxy, Excimer laser radiation, Experimental values, Gain distribution, Heteroj unction, Heterojunctions, Heterostructure, High values, Hypothetical energy band diagram, Inhomogeneity, Injection heterolasers, Internal quantum efficiency, Kvantovaya elektron, Laser, Laser radiation, Liquid epitaxy, Liquid epitaxy method, Metal vapors, Minimum threshold, Minimum values, Minority carriers, Optical confinement parameter, Optimal thickness, Pacs numbers, Pbse, Pbse emitter, Phys, Quantum electron, Radiative lifetime, Recombination, Refractive, Refractive index, Refractive indices, Region thickness, Region thicknesses, Shotov, Simple waveguide model, Solid solutions, Square centimeter, Stokes shift, Surface recombination processes, Surface recombination velocity, Tekh, Temperature dependence, Temperature dependences, Threshold currents, Type pbse, Vacuum epitaxy, Vacuum epitaxy methods, Waveguide, Waveguide parameters, Waveguide properties, Waveguide thickness.
Url:
DOI: 10.1070/QE1982v012n11ABEH006081
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ISTEX:0EAA02F5BC2F7026FAFD777F0141CB11910F139DLe document en format XML
<record><TEI wicri:istexFullTextTei="biblStruct"><teiHeader><fileDesc><titleStmt><title xml:lang="en">Analysis of factors influencing the threshold current of PbSnSe injection heterolasers</title></titleStmt><publicationStmt><idno type="wicri:source">ISTEX</idno><idno type="RBID">ISTEX:0EAA02F5BC2F7026FAFD777F0141CB11910F139D</idno><date when="1982" year="1982">1982</date><idno type="doi">10.1070/QE1982v012n11ABEH006081</idno><idno type="url">https://api.istex.fr/document/0EAA02F5BC2F7026FAFD777F0141CB11910F139D/fulltext/pdf</idno><idno type="wicri:Area/Istex/Corpus">000309</idno><idno type="wicri:explorRef" wicri:stream="Istex" wicri:step="Corpus" wicri:corpus="ISTEX">000309</idno><idno type="wicri:Area/Istex/Curation">000309</idno></publicationStmt><sourceDesc><biblStruct><analytic><title level="a" type="main" xml:lang="en">Analysis of factors influencing the threshold current of PbSnSe injection heterolasers</title></analytic><monogr></monogr><series><title level="j">Soviet Journal of Quantum Electronics</title><idno type="ISSN">0049-1748</idno><imprint><publisher>Institute Of Physics</publisher><pubPlace>Bristol</pubPlace><date type="published" when="1982-11-30">1982-11-30</date><biblScope unit="volume">12</biblScope><biblScope unit="issue">11</biblScope><biblScope unit="page" from="1391">1391</biblScope><biblScope unit="page" to="1397">1397</biblScope><biblScope unit="range">1391-1397</biblScope><biblScope unit="referenceNumber">26</biblScope><biblScope unit="citationNumber">20</biblScope></imprint><idno type="ISSN">0049-1748</idno></series></biblStruct></sourceDesc><seriesStmt><idno type="ISSN">0049-1748</idno></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption coefficient</term><term>Active layer</term><term>Active layer thickness</term><term>Active region</term><term>American institute</term><term>Asymmetry</term><term>Carrier densities</term><term>Carrier density</term><term>Confinement parameter</term><term>Continuous curves</term><term>Critical value</term><term>Different carrier densities</term><term>Diffusion length</term><term>Effective mass</term><term>Electrophysical properties</term><term>Emitter</term><term>Epitaxy</term><term>Excimer laser radiation</term><term>Experimental values</term><term>Gain distribution</term><term>Heteroj unction</term><term>Heterojunctions</term><term>Heterostructure</term><term>High values</term><term>Hypothetical energy band diagram</term><term>Inhomogeneity</term><term>Injection heterolasers</term><term>Internal quantum efficiency</term><term>Kvantovaya elektron</term><term>Laser</term><term>Laser radiation</term><term>Liquid epitaxy</term><term>Liquid epitaxy method</term><term>Metal vapors</term><term>Minimum threshold</term><term>Minimum values</term><term>Minority carriers</term><term>Optical confinement parameter</term><term>Optimal thickness</term><term>Pacs numbers</term><term>Pbse</term><term>Pbse emitter</term><term>Phys</term><term>Quantum electron</term><term>Radiative lifetime</term><term>Recombination</term><term>Refractive</term><term>Refractive index</term><term>Refractive indices</term><term>Region thickness</term><term>Region thicknesses</term><term>Shotov</term><term>Simple waveguide model</term><term>Solid solutions</term><term>Square centimeter</term><term>Stokes shift</term><term>Surface recombination processes</term><term>Surface recombination velocity</term><term>Tekh</term><term>Temperature dependence</term><term>Temperature dependences</term><term>Threshold currents</term><term>Type pbse</term><term>Vacuum epitaxy</term><term>Vacuum epitaxy methods</term><term>Waveguide</term><term>Waveguide parameters</term><term>Waveguide properties</term><term>Waveguide thickness</term></keywords><keywords scheme="Teeft" xml:lang="en"><term>Absorption coefficient</term><term>Active layer</term><term>Active layer thickness</term><term>Active region</term><term>American institute</term><term>Asymmetry</term><term>Carrier densities</term><term>Carrier density</term><term>Confinement parameter</term><term>Continuous curves</term><term>Critical value</term><term>Different carrier densities</term><term>Diffusion length</term><term>Effective mass</term><term>Electrophysical properties</term><term>Emitter</term><term>Epitaxy</term><term>Excimer laser radiation</term><term>Experimental values</term><term>Gain distribution</term><term>Heteroj unction</term><term>Heterojunctions</term><term>Heterostructure</term><term>High values</term><term>Hypothetical energy band diagram</term><term>Inhomogeneity</term><term>Injection heterolasers</term><term>Internal quantum efficiency</term><term>Kvantovaya elektron</term><term>Laser</term><term>Laser radiation</term><term>Liquid epitaxy</term><term>Liquid epitaxy method</term><term>Metal vapors</term><term>Minimum threshold</term><term>Minimum values</term><term>Minority carriers</term><term>Optical confinement parameter</term><term>Optimal thickness</term><term>Pacs numbers</term><term>Pbse</term><term>Pbse emitter</term><term>Phys</term><term>Quantum electron</term><term>Radiative lifetime</term><term>Recombination</term><term>Refractive</term><term>Refractive index</term><term>Refractive indices</term><term>Region thickness</term><term>Region thicknesses</term><term>Shotov</term><term>Simple waveguide model</term><term>Solid solutions</term><term>Square centimeter</term><term>Stokes shift</term><term>Surface recombination processes</term><term>Surface recombination velocity</term><term>Tekh</term><term>Temperature dependence</term><term>Temperature dependences</term><term>Threshold currents</term><term>Type pbse</term><term>Vacuum epitaxy</term><term>Vacuum epitaxy methods</term><term>Waveguide</term><term>Waveguide parameters</term><term>Waveguide properties</term><term>Waveguide thickness</term></keywords></textClass><langUsage><language 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