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Mechanical Properties and Crystallization Behavior of GeS2–Sb2S3–In2S3 Chalcogenide Glass

Identifieur interne : 003131 ( Istex/Corpus ); précédent : 003130; suivant : 003132

Mechanical Properties and Crystallization Behavior of GeS2–Sb2S3–In2S3 Chalcogenide Glass

Auteurs : Lei Ying ; Changgui Lin ; Qiuhua Nie ; Zhuobin Li ; Yinsheng Xu ; Feifei Chen ; Shixun Dai

Source :

RBID : ISTEX:DF0BB478205AFDACB615A4DA6FC69D51CAF57AE9

English descriptors

Abstract

54GeS2–36Sb2S3–10In2S3 glass‐ceramics were prepared by heat‐treating the base glass above Tg for different durations. The results of Raman spectra and XRD patterns show that the first precipitated crystals during the heat treatment are In2S3 and the crystallization of the Sb2S3 and GeS2 subsequently occurs. Bulk samples heat‐treated at 295°C for different heating rates and durations are used to study the crystallization mechanism and evolution of the three crystallization peaks (CPs). It is found that three CPs partly overlap with each other and then separate with increasing heat‐treating durations.

Url:
DOI: 10.1111/j.1551-2916.2012.05117.x

Links to Exploration step

ISTEX:DF0BB478205AFDACB615A4DA6FC69D51CAF57AE9

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<div type="abstract">54GeS2–36Sb2S3–10In2S3 glass‐ceramics were prepared by heat‐treating the base glass above Tg for different durations. The results of Raman spectra and XRD patterns show that the first precipitated crystals during the heat treatment are In2S3 and the crystallization of the Sb2S3 and GeS2 subsequently occurs. Bulk samples heat‐treated at 295°C for different heating rates and durations are used to study the crystallization mechanism and evolution of the three crystallization peaks (CPs). It is found that three CPs partly overlap with each other and then separate with increasing heat‐treating durations.</div>
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<abstract>54GeS2–36Sb2S3–10In2S3 glass‐ceramics were prepared by heat‐treating the base glass above Tg for different durations. The results of Raman spectra and XRD patterns show that the first precipitated crystals during the heat treatment are In2S3 and the crystallization of the Sb2S3 and GeS2 subsequently occurs. Bulk samples heat‐treated at 295°C for different heating rates and durations are used to study the crystallization mechanism and evolution of the three crystallization peaks (CPs). It is found that three CPs partly overlap with each other and then separate with increasing heat‐treating durations.</abstract>
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<note type="funding">Program for New Century Excellent Talents in University - No. NCET‐10‐0976; </note>
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