Enhanced mid-IR luminescence of Tm3+ ions in Ga2S3 nanocrystals embedded chalcohalide glass ceramics
Identifieur interne : 000031 ( Hal/Checkpoint ); précédent : 000030; suivant : 000032Enhanced mid-IR luminescence of Tm3+ ions in Ga2S3 nanocrystals embedded chalcohalide glass ceramics
Auteurs : Shixun Dai [République populaire de Chine] ; Changgui Lin [République populaire de Chine] ; Feifei Chen [République populaire de Chine] ; Xianghua Zhang [France] ; Chao Liu [Corée du Sud] ; Kai Xu [Corée du Sud] ; Jong Heo [Corée du Sud] ; Xiang Shen [République populaire de Chine] ; Xunsi Wang [République populaire de Chine]Source :
- Journal of Non-Crystalline Solids [ 0022-3093 ] ; 2011-06.
English descriptors
Abstract
Chalcohalide glass with a composition of 65GeS2-25Ga2S3-10CsI (in mol%) doped with 0.6 wt% Tm3+ ions was prepared by conventional melt-quench method. By heat treating the precursor glass at 20 °C above its glass transition temperature Tg for different durations, IR transparent glass ceramics were obtained. X-ray diffraction (XRD) and scanning electron microscope (SEM) showed that Ga2S3 crystallites were precipitated after heat treatment and their grain sizes were in nano-scale and increased with the elongation of heat treated time. Mid-IR luminescence properties of the glass and transparent glass ceramic samples were investigated. The emissions at 2.3 and 3.8 μm corresponding to optical transitions of 3H4 → 3H5 and 3H5 → 3F4 of Tm3+ ions were significantly enhanced by the presence of Ga2S3 nanocrystals and reached a maximum after 8 hours treatment.
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DOI: 10.1016/j.jnoncrysol.2010.11.063
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type="direct"></relation></listRelation><tutelles><tutelle active="#struct-322379" type="direct"><org type="institution" xml:id="struct-322379" status="INCOMING"><orgName>NINGBO UNIVERSITY</orgName><desc><address><country key="FR"></country></address></desc></org></tutelle></tutelles></hal:affiliation><country>République populaire de Chine</country></affiliation></author><author><name sortKey="Wang, Xunsi" sort="Wang, Xunsi" uniqKey="Wang X" first="Xunsi" last="Wang">Xunsi Wang</name><affiliation wicri:level="1"><hal:affiliation type="laboratory" xml:id="struct-230386" status="INCOMING"><orgName>Faculty of Information Science and Engineering</orgName><desc><address><addrLine>Ningbo University, Ningbo 315211, PR China</addrLine><country key="CN"></country></address></desc><listRelation><relation active="#struct-322379" type="direct"></relation></listRelation><tutelles><tutelle active="#struct-322379" type="direct"><org type="institution" xml:id="struct-322379" status="INCOMING"><orgName>NINGBO UNIVERSITY</orgName><desc><address><country key="FR"></country></address></desc></org></tutelle></tutelles></hal:affiliation><country>République populaire de Chine</country></affiliation></author></analytic><idno type="DOI">10.1016/j.jnoncrysol.2010.11.063</idno><series><title level="j">Journal of Non-Crystalline Solids</title><idno type="ISSN">0022-3093</idno><imprint><date type="datePub">2011-06</date></imprint></series></biblStruct></sourceDesc></fileDesc><profileDesc><textClass><keywords scheme="mix" xml:lang="en"><term>Chalcohalide glasses</term><term>Glass ceramic</term><term>Mid-infrared</term><term>Thulium ions</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Chalcohalide glass with a composition of 65GeS2-25Ga2S3-10CsI (in mol%) doped with 0.6 wt% Tm3+ ions was prepared by conventional melt-quench method. By heat treating the precursor glass at 20 °C above its glass transition temperature Tg for different durations, IR transparent glass ceramics were obtained. X-ray diffraction (XRD) and scanning electron microscope (SEM) showed that Ga2S3 crystallites were precipitated after heat treatment and their grain sizes were in nano-scale and increased with the elongation of heat treated time. Mid-IR luminescence properties of the glass and transparent glass ceramic samples were investigated. The emissions at 2.3 and 3.8 μm corresponding to optical transitions of 3H4 → 3H5 and 3H5 → 3F4 of Tm3+ ions were significantly enhanced by the presence of Ga2S3 nanocrystals and reached a maximum after 8 hours treatment.</div></front></TEI><hal api="V3"><titleStmt><title xml:lang="en">Enhanced mid-IR luminescence of Tm3+ ions in Ga2S3 nanocrystals embedded chalcohalide glass ceramics</title><author role="aut"><persName><forename type="first">Shixun</forename><surname>Dai</surname></persName><email></email><idno type="halauthor">880152</idno><affiliation ref="#struct-230386"></affiliation></author><author role="aut"><persName><forename type="first">Changgui</forename><surname>Lin</surname></persName><email></email><idno type="halauthor">738493</idno><affiliation ref="#struct-230386"></affiliation></author><author role="aut"><persName><forename type="first">Feifei</forename><surname>Chen</surname></persName><email></email><idno type="halauthor">882854</idno><affiliation ref="#struct-230386"></affiliation></author><author role="aut"><persName><forename type="first">Xianghua</forename><surname>Zhang</surname></persName><email>xiang-hua.zhang@univ-rennes1.fr</email><idno type="halauthor">886059</idno><affiliation ref="#struct-194938"></affiliation></author><author role="aut"><persName><forename type="first">Chao</forename><surname>Liu</surname></persName><email></email><idno type="halauthor">417990</idno><affiliation ref="#struct-230387"></affiliation></author><author role="aut"><persName><forename type="first">Kai</forename><surname>Xu</surname></persName><email></email><idno type="halauthor">882834</idno><affiliation ref="#struct-230387"></affiliation></author><author role="aut"><persName><forename type="first">Jong</forename><surname>Heo</surname></persName><email></email><idno type="halauthor">880210</idno><affiliation ref="#struct-230387"></affiliation></author><author role="aut"><persName><forename type="first">Xiang</forename><surname>Shen</surname></persName><email></email><idno type="halauthor">880183</idno><affiliation ref="#struct-230386"></affiliation></author><author role="aut"><persName><forename type="first">Xunsi</forename><surname>Wang</surname></persName><email></email><idno type="halauthor">880182</idno><affiliation ref="#struct-230386"></affiliation></author><editor role="depositor"><persName><forename>Corinne</forename><surname>Perier</surname></persName><email>corinne.perier@univ-rennes1.fr</email></editor></titleStmt><editionStmt><edition n="v1" type="current"><date type="whenSubmitted">2012-07-20 15:24:27</date><date type="whenModified">2015-12-04 11:32:55</date><date type="whenReleased">2012-07-20 15:24:27</date><date type="whenProduced">2011-06</date></edition><respStmt><resp>contributor</resp><name key="138782"><persName><forename>Corinne</forename><surname>Perier</surname></persName><email>corinne.perier@univ-rennes1.fr</email></name></respStmt></editionStmt><publicationStmt><distributor>CCSD</distributor><idno type="halId">hal-00719711</idno><idno type="halUri">https://hal.archives-ouvertes.fr/hal-00719711</idno><idno type="halBibtex">dai:hal-00719711</idno><idno type="halRefHtml">Journal of Non-Crystalline Solids, Elsevier, 2011, 357 (11-13), pp.2302-2305. <10.1016/j.jnoncrysol.2010.11.063></idno><idno type="halRef">Journal of Non-Crystalline Solids, Elsevier, 2011, 357 (11-13), pp.2302-2305. <10.1016/j.jnoncrysol.2010.11.063></idno></publicationStmt><seriesStmt><idno type="stamp" n="CNRS">CNRS - Centre national de la recherche scientifique</idno><idno type="stamp" n="UNIV-RENNES1">Université de Rennes 1</idno><idno type="stamp" n="ENSC-RENNES">Ecole Nationale Supérieure de Chimie de Rennes</idno><idno type="stamp" n="INSA-RENNES">Institut National des Sciences Appliquées de Rennes</idno><idno type="stamp" n="SCR-CM-INSA" p="ISCR">Sciences Chimiques de Rennes / Equipe Chimie-Métallurgie</idno><idno type="stamp" n="SCR_VC" p="ISCR">Verres et Céramiques</idno><idno type="stamp" n="ISCR">INSTITUT DES SCIENCES CHIMIQUES DE RENNES</idno><idno type="stamp" n="SCR_CTI">Chimie Théorique Inorganique</idno><idno type="stamp" n="UR1-SPM">Université de Rennes 1 - UFR Sciences et Propriétés de la Matière</idno><idno type="stamp" n="INC-CNRS">Institut de Chimie du CNRS</idno></seriesStmt><notesStmt><note type="audience" n="2">International</note><note type="popular" n="0">No</note><note type="peer" n="1">Yes</note></notesStmt><sourceDesc><biblStruct><analytic><title xml:lang="en">Enhanced mid-IR luminescence of Tm3+ ions in Ga2S3 nanocrystals embedded chalcohalide glass ceramics</title><author role="aut"><persName><forename type="first">Shixun</forename><surname>Dai</surname></persName><idno type="halAuthorId">880152</idno><affiliation ref="#struct-230386"></affiliation></author><author role="aut"><persName><forename type="first">Changgui</forename><surname>Lin</surname></persName><idno type="halAuthorId">738493</idno><affiliation ref="#struct-230386"></affiliation></author><author role="aut"><persName><forename type="first">Feifei</forename><surname>Chen</surname></persName><idno type="halAuthorId">882854</idno><affiliation ref="#struct-230386"></affiliation></author><author role="aut"><persName><forename type="first">Xianghua</forename><surname>Zhang</surname></persName><email>xiang-hua.zhang@univ-rennes1.fr</email><idno type="halAuthorId">886059</idno><affiliation ref="#struct-194938"></affiliation></author><author role="aut"><persName><forename type="first">Chao</forename><surname>Liu</surname></persName><idno type="halAuthorId">417990</idno><affiliation ref="#struct-230387"></affiliation></author><author role="aut"><persName><forename type="first">Kai</forename><surname>Xu</surname></persName><idno type="halAuthorId">882834</idno><affiliation ref="#struct-230387"></affiliation></author><author role="aut"><persName><forename type="first">Jong</forename><surname>Heo</surname></persName><idno type="halAuthorId">880210</idno><affiliation ref="#struct-230387"></affiliation></author><author role="aut"><persName><forename type="first">Xiang</forename><surname>Shen</surname></persName><idno type="halAuthorId">880183</idno><affiliation ref="#struct-230386"></affiliation></author><author role="aut"><persName><forename type="first">Xunsi</forename><surname>Wang</surname></persName><idno type="halAuthorId">880182</idno><affiliation ref="#struct-230386"></affiliation></author></analytic><monogr><idno type="halJournalId" status="VALID">15885</idno><idno type="issn">0022-3093</idno><title level="j">Journal of Non-Crystalline Solids</title><imprint><publisher>Elsevier</publisher><biblScope unit="volume">357</biblScope><biblScope unit="issue">11-13</biblScope><biblScope unit="pp">2302-2305</biblScope><date type="datePub">2011-06</date></imprint></monogr><idno type="doi">10.1016/j.jnoncrysol.2010.11.063</idno></biblStruct></sourceDesc><profileDesc><langUsage><language ident="en">English</language></langUsage><textClass><keywords scheme="author"><term xml:lang="en">Chalcohalide glasses</term><term xml:lang="en">Glass ceramic</term><term xml:lang="en">Thulium ions</term><term xml:lang="en">Mid-infrared</term></keywords><classCode scheme="halDomain" n="chim.mate">Chemical Sciences/Material chemistry</classCode><classCode scheme="halTypology" n="ART">Journal articles</classCode></textClass><abstract xml:lang="en">Chalcohalide glass with a composition of 65GeS2-25Ga2S3-10CsI (in mol%) doped with 0.6 wt% Tm3+ ions was prepared by conventional melt-quench method. By heat treating the precursor glass at 20 °C above its glass transition temperature Tg for different durations, IR transparent glass ceramics were obtained. X-ray diffraction (XRD) and scanning electron microscope (SEM) showed that Ga2S3 crystallites were precipitated after heat treatment and their grain sizes were in nano-scale and increased with the elongation of heat treated time. Mid-IR luminescence properties of the glass and transparent glass ceramic samples were investigated. The emissions at 2.3 and 3.8 μm corresponding to optical transitions of 3H4 → 3H5 and 3H5 → 3F4 of Tm3+ ions were significantly enhanced by the presence of Ga2S3 nanocrystals and reached a maximum after 8 hours treatment.</abstract></profileDesc></hal></record>Pour manipuler ce document sous Unix (Dilib)
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