Serveur d'exploration sur le thulium - Analysis (France)

Index « Auteurs » - entrée « E. Alves »
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E. Alleno < E. Alves < E. Antic-Fidancev  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 6.
Ident.Authors (with country if any)Title
000153 (2007) L. Bodiou [France] ; A. Braud [France] ; C. Terpin [France] ; J. L. Doualan [France] ; R. Moncorge [France] ; K. Lorenz [Portugal] ; E. Alves [Portugal]Spectroscopic investigation of implanted epilayers of Tm3+:GaN
000178 (2006) T. Wojtowicz [France] ; F. Gloux [France] ; P. Ruterana [France] ; K. Lorenz [Portugal] ; E. Alves [Portugal]TEM investigation of Tm implanted GaN, the influence of high temperature annealing
000179 (2006) T. Wojtowicz [France] ; F. Gloux [France] ; P. Ruterana [France] ; G. Nouet [France] ; L. Bodiou [France] ; A. Braud [France] ; K. Lorenz [Portugal] ; E. Alves [Portugal]Structure and role of ultrathin AlN layers for improving optical activation of rare earth implanted GaN
000183 (2006) S. Hernandez [Royaume-Uni] ; R. Cusco [Espagne] ; L. Artus [Espagne] ; E. Nogales [Royaume-Uni] ; R. W. Martin [Royaume-Uni] ; K. P. O'Donnell [Royaume-Uni] ; G. Halambalakis [France] ; O. Briar [France] ; K. Lorenz [Portugal] ; E. Alves [Portugal]Lattice order in thulium-doped GaN epilayers : In situ doping versus ion implantation
000192 (2005-05-30) S. Hernandez ; R. Cusco ; L. Artus ; E. Nogales ; Rw Martin ; Kp O'Donnell ; G. Halambalakis ; Olivier Briot [France] ; K. Lorenz ; E. AlvesLattice order in thulium-doped GaN epilayers: In situ doping versus ion implantation
000342 (1998) E. Alves [Portugal] ; M. F. Da Silva [Portugal] ; J. C. Soares [Portugal] ; M. O. Henry [Irlande (pays)] ; R. Gwilliam [Royaume-Uni] ; B. J. Sealy [Royaume-Uni] ; K. Freitag [Allemagne] ; R. Vianden [Allemagne] ; D. Stievenard [France]Lattice site location of thulium and erbium implanted GaAs

List of associated KwdEn.i

Nombre de
documents
Descripteur
4MOCVD
4Thulium additions
3Gallium nitrides
2Annealing
2Binary compounds
2Doped materials
2Doping
2Experimental study
2High temperature
2III-V semiconductors
2Ion implantation
2Molecular beam epitaxy
2Nanocrystal
2Optical materials
2Raman scattering
2Transmission electron microscopy
1AMORPHIZATION
1Aluminium nitrides
1Alves
1Ambient temperature
1Angular scans
1Appl
1Charge carrier trapping
1DAMAGE
1Damage
1Different lattice sites
1Doped gaas
1Dos
1EMISSION
1ER
1Energy gap
1Epitaxial layers
1Eras precipitates
1Eras site
1Europium additions
1Excitation spectrum
1Fluence
1Full curve
1Full curves
1Gaas
1Gaas lattice
1Gaas matrix
1Heat treatments
1Highest dose
1Impurity cluster
1Impurity site
1Lattice
1Lattice site location
1Lowest dose
1MOLECULAR-BEAM EPITAXY
1Monte carlo simulations
1Nanostructured materials
1Other hand
1Photoluminescence
1Phys
1Precipitate
1RAMAN-SCATTERING
1Raman spectra
1Semiconductor epitaxial layers
1Simulation
1Soares
1Stacking fault density
1Stacking faults
1Substitutional
1Substitutional sites
1Surface layers
1TEMPERATURE
1THIN-FILMS
1Takahei
1Tetrahedral
1Tetrahedral site
1Vacancies
1ion beam implantation
1rare earth doping

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