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Serveur d'exploration sur le thulium - Analysis (France)

Index « Auteurs » - entrée « A. Braud »
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A. Bouldjedri < A. Braud < A. Brenier  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 7.
Ident.Authors (with country if any)Title
000153 (2007) L. Bodiou [France] ; A. Braud [France] ; C. Terpin [France] ; J. L. Doualan [France] ; R. Moncorge [France] ; K. Lorenz [Portugal] ; E. Alves [Portugal]Spectroscopic investigation of implanted epilayers of Tm3+:GaN
000179 (2006) T. Wojtowicz [France] ; F. Gloux [France] ; P. Ruterana [France] ; G. Nouet [France] ; L. Bodiou [France] ; A. Braud [France] ; K. Lorenz [Portugal] ; E. Alves [Portugal]Structure and role of ultrathin AlN layers for improving optical activation of rare earth implanted GaN
000220 (2004) P. Camy [France] ; J. L. Doualan [France] ; S. Renard [France] ; A. Braud [France] ; V. Menard [France] ; R. Moncorge [France]Tm3+:CaF2 for 1.9 μm laser operation
000272 (2001) A. Braud [France] ; P. Y. Tigreat [France] ; J. L. Doualan [France] ; R. Moncorge [France]Spectroscopy and cw operation of a 1.85 μm Tm :KY3F10 laser
000281 (2000-02-15) A. Braud [France, Russie] ; S. Girard [France] ; J. L. Doualan [France] ; M. Thuau [France] ; R. Moncorge [France] ; A. M. Tkachuk [France]Energy-transfer processes in Yb:Tm-doped KY3F10, LiYF4, and BaY2F8 single crystals for laser operation at 1.5 and 2.3 μm
000287 (2000) A. Braud [France, États-Unis] ; M. Fromager [France] ; J. L Doualan [France] ; S. Girard [France] ; R. Moncorgé [France] ; M. Thuau [France] ; B. Ferrand [France] ; Ph Thony [France]Passive Q-switching and wavelength tunability of a diode-pumped Tm:Yb:YLiF4 laser around 1.5 μm
000355 (1998) A. Braud [France] ; S. Girard [France] ; J. L. Doualan [France] ; R. Moncorge [France]Spectroscopy and fluorescence dynamics of (Tm3+, Tb3+) and (Tm3+, Eu3+) doped LiYF4 single crystals for 1.5-μm laser operation

List of associated KwdEn.i

Nombre de
documents		Descripteur
6Thulium additions
5Experimental study
5Solid state lasers
4Doped materials
3Infrared laser
3Laser materials
3Optical materials
3Ternary compounds
3Yttrium fluorides
2Annealing
2CW lasers
2Codoping
2Europium additions
2Lithium fluorides
2MOCVD
2Monocrystals
2Output power
2Thulium
2Tunable lasers
2Ytterbium
1Absorber
1Absorption spectra
1Aluminium nitrides
1Ambient temperature
1Average output power
1Band structure
1Barium compounds
1Birefringent filter
1Braud
1Calcium fluorides
1Charge carrier trapping
1Crystal growth
1Damage
1Diode
1Diode pumping
1Doping
1Elsevier science
1Emission spectra
1Emission wavelength
1Energy gap
1Epitaxial layers
1Excitation spectrum
1Experimental setup
1First threshold condition
1Fluence
1Fluorescence
1Fresnel losses
1Gain medium
1Gallium nitrides
1High temperature
1Impurity cluster
1Impurity site
1Impurity states
1Infrared radiation
1Inorganic compounds
1Ion implantation
1Laser
1Laser crystal
1Laser emission
1Laser experiments
1Laser output power
1Laser pumping
1Laser transition
1Light emission
1Lithium compounds
1Luminescence decay
1Lyot
1Lyot filter
1Mwrcm2
1Nanocrystal
1Optical absorption
1Optics
1Optics communications
1Output coupler
1Photoluminescence
1Potassium compounds
1Potassium fluorides
1Pulse duration
1Pulse repetition frequency
1Pulse shape
1Pulse train
1Q switched laser
1Quantity ratio
1Saturable
1Saturable absorber
1Saturable absorbers
1Saturation intensity
1Slope efficiency
1Stacking fault density
1Such losses
1Surface layers
1Terbium additions
1Theoretical study
1Thulium ions
1Transmission electron microscopy
1Ytterbium additions

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