List of bibliographic references
Number of relevant bibliographic references: 25.
[0-20] [
0 - 20][
0 - 25][
20-24][
20-40]
Ident. | Authors (with country if any) | Title |
---|
000109 (2009) |
Laura K. Perry ; D. H. Ryan ; Gérard Venturini (physicien) [France] ; B. Malaman | ChemInform Abstract: Hexagonal TmMn6Sn4Ge2 Investigation by Neutron Diffraction and 119Sn Moessbauer Spectroscopy. |
000118 (2009) |
Laura K. Perry [Canada] ; D. H. Ryan [Canada] ; Gérard Venturini (physicien) [France] ; B. Malaman [France] | Hexagonal TmMn6Sn4Ge2 investigated by neutron diffraction and 119Sn Mössbauer spectroscopy |
000234 (2003) |
C. Lefevre [France] ; Gérard Venturini (physicien) [France] ; B. Malaman [France] | Neutron diffraction study of HfFe6Ge6-type TmMn6Sn6-xInx compounds (0.4≤x≤1.0) |
000248 (2002) |
C. Lefevre [France] ; Gérard Venturini (physicien) [France] | Sn substitution inducing magnetocrystalline anisotropy in TmMn6Sn6-xGax compounds (0.1≤x≤2.6) |
000250 (2002) |
C. Lefevre [France] ; Gérard Venturini (physicien) [France] ; B. Malaman [France] | Neutron diffraction study of HfFe6Ge6-type TmMn6Sn6-xGax compounds (0.0≤x≤2.5) |
000261 (2001) |
C. Lefevre [France] ; Gérard Venturini (physicien) [France] ; B. Malaman [France] | Re-entrant ferrimagnetism in HfFe6Ge6-type TmMn6Sn6− x In x (0.2≤ x ≤1.6) and ErMn6Sn6− x In x (0.1≤ x ≤1.0) solid solutions |
000262 (2001) |
Gérard Venturini (physicien) [France] ; A. Vernière [France] ; B. Malaman [France] | Neutron diffraction study of HfFe6Ge6-type TmMn6Ge6− x Ga x compounds ( x =0.2, 0.4, 0.6, 0.8 and 1.0) |
000264 (2001) |
Gérard Venturini (physicien) [France] | Magnetic study of HfFe6Ge6-type solid solutions RMn6Ge6− x Ga x (R=Dy, Ho, Er; 0.1≤ x ≤1.0) |
000284 (2000) |
Gérard Venturini (physicien) [France] ; R. Welter [France] | Single crystal refinement of tetragonal Tm3(Ga,Ge)5 with anti-Cr5B3 structure |
000289 (2000) |
Gérard Venturini (physicien) [France] | Magnetic study of HfFe6Ge6-type solid solutions TbMn6Ge6− x Ga x (0.05≤ x ≤0.60) and TmMn6Ge6− x Ga x (0.2≤ x ≤1.0) |
000297 (2000) |
Gérard Venturini (physicien) [France] | Orthorhombic TmGe≈1.9, with a ZrSi2–ErGe1.83 intergrowth structure |
000299 (2000) |
Gérard Venturini (physicien) [France] ; R. Welter | ChemInform Abstract: Single Crystal Refinement of Tetragonal Tm3(Ga,Ge)5 with anti‐Cr5B3 Structure. |
000300 (2000) |
Gérard Venturini (physicien) [France] | ChemInform Abstract: Orthorhombic TmGe≈1.9, with a ZrSi2—ErGe1.83 Intergrowth Structure. |
000306 (2000) |
Gérard Venturini (physicien) [France] | Orthorhombic TmGe1.9, with a ZrSi2-ErGe1.83 intergrowth structure |
000314 (1999) |
Gérard Venturini (physicien) [France] ; I. Ijjaali [France] ; B. Malaman [France] | Vacancy ordering in AlB2-type RGe2− x compounds (R=Y, Nd, Sm, Gd–Lu) |
000345 (1998) |
N. M Norlidah [France] ; I. Ijjaali [France] ; Gérard Venturini (physicien) [France] ; B. Malaman [France] | Crystal structure of YbMn∼0.17Si∼1.83: a new AlB2–BaAl4 intergrowth compound |
000396 (1996) |
Gérard Venturini (physicien) [France] ; B. Malaman [France] ; E. Ressouche [France] | Magnetic ordering in ternary RMn2Ge2 compounds (R Tb, Ho, Er, Tm, Lu) from neutron diffraction study |
000489 (1993) |
Gérard Venturini (physicien) [France] ; R. Welter [France] ; B. Malaman [France] | Room temperature variation in the threshold fields in R x Y 1 − x Mn 6 Sn 6 (R CeNd, Sm, GdHo) solid solutions |
000519 (1991) |
Gérard Venturini (physicien) [France] ; B. Chafik El Idrissi [France] ; B. Malaman [France] | Magnetic properties of RMn6Sn6 (R = Sc, Y, Gd−Tm, Lu) compounds with HfFe6Ge6 type structure |
000533 (1990) |
Gérard Venturini (physicien) [France] ; B. Malaman [France] | Crystal structure of Y3Pt4Ge6: An intergrowth of BaAl4 and YIrGe2 slabs |
000543 (1989) |
B. Malaman [France] ; Gérard Venturini (physicien) [France] ; B. Roques [France] | Structure cristalline de Tm4Mn4Sn7, le premier stannure isotype de Zr4Co4Ge7 |
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