Portugal And NotM. Salgueiro Da Silva

List of bibliographic references

Number of relevant bibliographic references: 6.

Ident.	Authors (with country if any)	Title
000153	L. Bodiou [France] ; A. Braud [France] ; C. Terpin [France] ; J. L. Doualan [France] ; R. Moncorge [France] ; K. Lorenz [Portugal] ; E. Alves [Portugal]	Spectroscopic investigation of implanted epilayers of Tm3+:GaN
000178	T. Wojtowicz [France] ; F. Gloux [France] ; P. Ruterana [France] ; K. Lorenz [Portugal] ; E. Alves [Portugal]	TEM investigation of Tm implanted GaN, the influence of high temperature annealing
000179	T. Wojtowicz [France] ; F. Gloux [France] ; P. Ruterana [France] ; G. Nouet [France] ; L. Bodiou [France] ; A. Braud [France] ; K. Lorenz [Portugal] ; E. Alves [Portugal]	Structure and role of ultrathin AlN layers for improving optical activation of rare earth implanted GaN
000183	S. Hernandez [Royaume-Uni] ; R. Cusco [Espagne] ; L. Artus [Espagne] ; E. Nogales [Royaume-Uni] ; R. W. Martin [Royaume-Uni] ; K. P. O'Donnell [Royaume-Uni] ; G. Halambalakis [France] ; O. Briar [France] ; K. Lorenz [Portugal] ; E. Alves [Portugal]	Lattice order in thulium-doped GaN epilayers : In situ doping versus ion implantation
000342	E. Alves [Portugal] ; M. F. Da Silva [Portugal] ; J. C. Soares [Portugal] ; M. O. Henry [Irlande (pays)] ; R. Gwilliam [Royaume-Uni] ; B. J. Sealy [Royaume-Uni] ; K. Freitag [Allemagne] ; R. Vianden [Allemagne] ; D. Stievenard [France]	Lattice site location of thulium and erbium implanted GaAs
000593	V. Berg [France] ; J. Oms [France] ; M. C. Abreu [Portugal] ; K. Fransson [Suède] ; Hu Zhaomin [République populaire de Chine]	Half-life measurements of excited levels in 157, 159, 161Er

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