NickelMaghrebV1, PascalFrancis, Curation, bibRecord, 000420

Structure, surface morphology and electrical properties of evaporated Ni thin films: Effect of substrates, thickness and Cu underlayer

Identifieur interne : 000420 ( PascalFrancis/Curation ); précédent : 000419; suivant : 000421

Structure, surface morphology and electrical properties of evaporated Ni thin films: Effect of substrates, thickness and Cu underlayer

Auteurs : M. Hemmous [Algérie] ; A. Layadi [Algérie] ; A. Guittoum [Algérie] ; N. Souami [Algérie] ; M. Mebarki [Algérie] ; N. Menni [Algérie]

Source :

Thin solid films [ 0040-6090 ] ; 2014.

RBID : Pascal:14-0167333

Descripteurs français

Pascal (Inist)
- Structure surface, Morphologie surface, Propriété électrique, Couche mince, Effet dimensionnel, Evaporation, Verre, RBS, Interface, Texture, Grosseur grain, Diffraction RX, Microscopie électronique balayage, Résistivité électrique, Mécanisme croissance, Effet contrainte, Valeur critique, Epaisseur couche, Nickel, Cuivre, Substrat mica, Substrat Al2O3, Substrat cuivre, Substrat silicium, 6855J, 7350, 6855A, 8115A.
Wicri :
- topic : Verre, Nickel, Cuivre.

English descriptors

KwdEn :
- Copper, Critical value, Electric resistivity, Electrical properties, Evaporation, Glass, Grain size, Growth mechanism, Interfaces, Layer thickness, Nickel, RBS, Scanning electron microscopy, Size effect, Stress effects, Surface morphology, Surface structure, Texture, Thin films, XRD.

Abstract

Series of Ni thin films have been deposited by thermal evaporation onto glass, Si(111), Cu, mica and Al₂O₃ substrates with and without a Cu underlayer. The Ni thicknesses, t, are in the 4 to 163 nm range. The Cu underlayer has also been evaporated with a Cu thickness equal to 27, 52 and 90 nm. The effects of substrate, the Ni thickness and the Cu underlayer on the structural and electrical properties of Ni are investigated. Rutherford Backscattering Spectroscopy was used to probe the Ni/Substrate and Ni-Cu underlayer interfaces and to measure both Ni and Cu thicknesses. The texture, the strain and the grain size values were derived from X-ray diffraction experiments. The surface morphology is studied by means of a Scanning Electron Microscope. The electrical resistivity is measured by the four point probe. The Ni films grow with the <111> texture on all substrates. The Ni grain sizes D increase with increasing thickness for the glass, Si and mica substrates and decrease for the Cu one. The strain ε is positive for low thickness, decreases in magnitude and becomes negative as t increases. With the Cu underlayer, the growth mode goes through two phases: first, the stress (grain size) increases (decreases) up to a critical thickness t_Cr, then stress is relieved and grain size increases. All these results will be discussed and correlated.

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A03		`1`		`@0 Thin solid films`
A05				`@2 562`
A08	`01`	`1`	`ENG`	`@1 Structure, surface morphology and electrical properties of evaporated Ni thin films: Effect of substrates, thickness and Cu underlayer`
A11	`01`	`1`		`@1 HEMMOUS (M.)`
A11	`02`	`1`		`@1 LAYADI (A.)`
A11	`03`	`1`		`@1 GUITTOUM (A.)`
A11	`04`	`1`		`@1 SOUAMI (N.)`
A11	`05`	`1`		`@1 MEBARKI (M.)`
A11	`06`	`1`		`@1 MENNI (N.)`
A14	`01`			`@1 L.E.S.I,M.S., Département de Physique, Université Ferhat Abbas, Sétif 1 @2 Sétif 19000 @3 DZA @Z 1 aut. @Z 2 aut.`
A14	`02`			`@1 Centre de Recherche Nucléaire d'Alger (CRNA) @2 Alger 16000 @3 DZA @Z 1 aut. @Z 3 aut. @Z 4 aut.`
A14	`03`			`@1 Faculté des Sciences Exactes, Université A. Mira @2 Béjaia 06000 @3 DZA @Z 5 aut.`
A14	`04`			`@1 Faculté des Sciences de l'Ingénieur, Université Ferhat Abbas, Sétif 1 @2 Sétif 19000 @3 DZA @Z 6 aut.`
A14	`05`			`@1 CRTSE @2 Alger 16038 @3 DZA @Z 5 aut.`
A20				`@1 229-238`
A21				`@1 2014`
A23	`01`			`@0 ENG`
A43	`01`			`@1 INIST @2 13597 @5 354000502763030360`
A44				`@0 0000 @1 © 2014 INIST-CNRS. All rights reserved.`
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C01	`01`		`ENG`	@0 Series of Ni thin films have been deposited by thermal evaporation onto glass, Si(111), Cu, mica and Al₂O₃ substrates with and without a Cu underlayer. The Ni thicknesses, t, are in the 4 to 163 nm range. The Cu underlayer has also been evaporated with a Cu thickness equal to 27, 52 and 90 nm. The effects of substrate, the Ni thickness and the Cu underlayer on the structural and electrical properties of Ni are investigated. Rutherford Backscattering Spectroscopy was used to probe the Ni/Substrate and Ni-Cu underlayer interfaces and to measure both Ni and Cu thicknesses. The texture, the strain and the grain size values were derived from X-ray diffraction experiments. The surface morphology is studied by means of a Scanning Electron Microscope. The electrical resistivity is measured by the four point probe. The Ni films grow with the <111> texture on all substrates. The Ni grain sizes D increase with increasing thickness for the glass, Si and mica substrates and decrease for the Cu one. The strain ε is positive for low thickness, decreases in magnitude and becomes negative as t increases. With the Cu underlayer, the growth mode goes through two phases: first, the stress (grain size) increases (decreases) up to a critical thickness t_Cr, then stress is relieved and grain size increases. All these results will be discussed and correlated.
C02	`01`	`3`		`@0 001B60H55J`
C02	`02`	`3`		`@0 001B60A16`
C02	`03`	`3`		`@0 001B70C50`
C02	`04`	`3`		`@0 001B80A15A`
C03	`01`	`3`	`FRE`	`@0 Structure surface @5 01`
C03	`01`	`3`	`ENG`	`@0 Surface structure @5 01`
C03	`02`	`3`	`FRE`	`@0 Morphologie surface @5 02`
C03	`02`	`3`	`ENG`	`@0 Surface morphology @5 02`
C03	`03`	`3`	`FRE`	`@0 Propriété électrique @5 03`
C03	`03`	`3`	`ENG`	`@0 Electrical properties @5 03`
C03	`04`	`3`	`FRE`	`@0 Couche mince @5 04`
C03	`04`	`3`	`ENG`	`@0 Thin films @5 04`
C03	`05`	`3`	`FRE`	`@0 Effet dimensionnel @5 05`
C03	`05`	`3`	`ENG`	`@0 Size effect @5 05`
C03	`06`	`3`	`FRE`	`@0 Evaporation @5 06`
C03	`06`	`3`	`ENG`	`@0 Evaporation @5 06`
C03	`07`	`3`	`FRE`	`@0 Verre @5 07`
C03	`07`	`3`	`ENG`	`@0 Glass @5 07`
C03	`08`	`3`	`FRE`	`@0 RBS @5 08`
C03	`08`	`3`	`ENG`	`@0 RBS @5 08`
C03	`09`	`3`	`FRE`	`@0 Interface @5 10`
C03	`09`	`3`	`ENG`	`@0 Interfaces @5 10`
C03	`10`	`3`	`FRE`	`@0 Texture @5 11`
C03	`10`	`3`	`ENG`	`@0 Texture @5 11`
C03	`11`	`3`	`FRE`	`@0 Grosseur grain @5 12`
C03	`11`	`3`	`ENG`	`@0 Grain size @5 12`
C03	`12`	`3`	`FRE`	`@0 Diffraction RX @5 13`
C03	`12`	`3`	`ENG`	`@0 XRD @5 13`
C03	`13`	`3`	`FRE`	`@0 Microscopie électronique balayage @5 14`
C03	`13`	`3`	`ENG`	`@0 Scanning electron microscopy @5 14`
C03	`14`	`3`	`FRE`	`@0 Résistivité électrique @5 29`
C03	`14`	`3`	`ENG`	`@0 Electric resistivity @5 29`
C03	`15`	`X`	`FRE`	`@0 Mécanisme croissance @5 30`
C03	`15`	`X`	`ENG`	`@0 Growth mechanism @5 30`
C03	`15`	`X`	`SPA`	`@0 Mecanismo crecimiento @5 30`
C03	`16`	`3`	`FRE`	`@0 Effet contrainte @5 31`
C03	`16`	`3`	`ENG`	`@0 Stress effects @5 31`
C03	`17`	`X`	`FRE`	`@0 Valeur critique @5 32`
C03	`17`	`X`	`ENG`	`@0 Critical value @5 32`
C03	`17`	`X`	`SPA`	`@0 Valor crítico @5 32`
C03	`18`	`X`	`FRE`	`@0 Epaisseur couche @5 33`
C03	`18`	`X`	`ENG`	`@0 Layer thickness @5 33`
C03	`18`	`X`	`SPA`	`@0 Espesor capa @5 33`
C03	`19`	`3`	`FRE`	`@0 Nickel @2 NC @5 34`
C03	`19`	`3`	`ENG`	`@0 Nickel @2 NC @5 34`
C03	`20`	`3`	`FRE`	`@0 Cuivre @2 NC @5 35`
C03	`20`	`3`	`ENG`	`@0 Copper @2 NC @5 35`
C03	`21`	`3`	`FRE`	`@0 Substrat mica @4 INC @5 46`
C03	`22`	`3`	`FRE`	`@0 Substrat Al2O3 @4 INC @5 47`
C03	`23`	`3`	`FRE`	`@0 Substrat cuivre @4 INC @5 48`
C03	`24`	`3`	`FRE`	`@0 Substrat silicium @4 INC @5 49`
C03	`25`	`3`	`FRE`	`@0 6855J @4 INC @5 71`
C03	`26`	`3`	`FRE`	`@0 7350 @4 INC @5 72`
C03	`27`	`3`	`FRE`	`@0 6855A @4 INC @5 73`
C03	`28`	`3`	`FRE`	`@0 8115A @4 INC @5 74`
N21				`@1 209`
N44	`01`			`@1 OTO`
N82				`@1 OTO`

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Pascal:14-0167333

Le document en format XML

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<sourceDesc><biblStruct><analytic><title xml:lang="en" level="a">Structure, surface morphology and electrical properties of evaporated Ni thin films: Effect of substrates, thickness and Cu underlayer</title>
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<country>Algérie</country>
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<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Centre de Recherche Nucléaire d'Alger (CRNA)</s1>
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<sZ>1 aut.</sZ>
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<author><name sortKey="Layadi, A" sort="Layadi, A" uniqKey="Layadi A" first="A." last="Layadi">A. Layadi</name>
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<author><name sortKey="Guittoum, A" sort="Guittoum, A" uniqKey="Guittoum A" first="A." last="Guittoum">A. Guittoum</name>
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<author><name sortKey="Souami, N" sort="Souami, N" uniqKey="Souami N" first="N." last="Souami">N. Souami</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Centre de Recherche Nucléaire d'Alger (CRNA)</s1>
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<series><title level="j" type="main">Thin solid films</title>
<title level="j" type="abbreviated">Thin solid films</title>
<idno type="ISSN">0040-6090</idno>
<imprint><date when="2014">2014</date>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Copper</term>
<term>Critical value</term>
<term>Electric resistivity</term>
<term>Electrical properties</term>
<term>Evaporation</term>
<term>Glass</term>
<term>Grain size</term>
<term>Growth mechanism</term>
<term>Interfaces</term>
<term>Layer thickness</term>
<term>Nickel</term>
<term>RBS</term>
<term>Scanning electron microscopy</term>
<term>Size effect</term>
<term>Stress effects</term>
<term>Surface morphology</term>
<term>Surface structure</term>
<term>Texture</term>
<term>Thin films</term>
<term>XRD</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Structure surface</term>
<term>Morphologie surface</term>
<term>Propriété électrique</term>
<term>Couche mince</term>
<term>Effet dimensionnel</term>
<term>Evaporation</term>
<term>Verre</term>
<term>RBS</term>
<term>Interface</term>
<term>Texture</term>
<term>Grosseur grain</term>
<term>Diffraction RX</term>
<term>Microscopie électronique balayage</term>
<term>Résistivité électrique</term>
<term>Mécanisme croissance</term>
<term>Effet contrainte</term>
<term>Valeur critique</term>
<term>Epaisseur couche</term>
<term>Nickel</term>
<term>Cuivre</term>
<term>Substrat mica</term>
<term>Substrat Al2O3</term>
<term>Substrat cuivre</term>
<term>Substrat silicium</term>
<term>6855J</term>
<term>7350</term>
<term>6855A</term>
<term>8115A</term>
</keywords>
<keywords scheme="Wicri" type="topic" xml:lang="fr"><term>Verre</term>
<term>Nickel</term>
<term>Cuivre</term>
</keywords>
</textClass>
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<front><div type="abstract" xml:lang="en">Series of Ni thin films have been deposited by thermal evaporation onto glass, Si(111), Cu, mica and Al<sub>2</sub>
O<sub>3</sub>
 substrates with and without a Cu underlayer. The Ni thicknesses, t, are in the 4 to 163 nm range. The Cu underlayer has also been evaporated with a Cu thickness equal to 27, 52 and 90 nm. The effects of substrate, the Ni thickness and the Cu underlayer on the structural and electrical properties of Ni are investigated. Rutherford Backscattering Spectroscopy was used to probe the Ni/Substrate and Ni-Cu underlayer interfaces and to measure both Ni and Cu thicknesses. The texture, the strain and the grain size values were derived from X-ray diffraction experiments. The surface morphology is studied by means of a Scanning Electron Microscope. The electrical resistivity is measured by the four point probe. The Ni films grow with the <111> texture on all substrates. The Ni grain sizes D increase with increasing thickness for the glass, Si and mica substrates and decrease for the Cu one. The strain ε is positive for low thickness, decreases in magnitude and becomes negative as t increases. With the Cu underlayer, the growth mode goes through two phases: first, the stress (grain size) increases (decreases) up to a critical thickness t<sub>Cr</sub>
, then stress is relieved and grain size increases. All these results will be discussed and correlated.</div>
</front>
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<fA08 i1="01" i2="1" l="ENG"><s1>Structure, surface morphology and electrical properties of evaporated Ni thin films: Effect of substrates, thickness and Cu underlayer</s1>
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<fA11 i1="01" i2="1"><s1>HEMMOUS (M.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>LAYADI (A.)</s1>
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<fA11 i1="03" i2="1"><s1>GUITTOUM (A.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>SOUAMI (N.)</s1>
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<fA11 i1="05" i2="1"><s1>MEBARKI (M.)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>MENNI (N.)</s1>
</fA11>
<fA14 i1="01"><s1>L.E.S.I,M.S., Département de Physique, Université Ferhat Abbas, Sétif 1</s1>
<s2>Sétif 19000</s2>
<s3>DZA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Centre de Recherche Nucléaire d'Alger (CRNA)</s1>
<s2>Alger 16000</s2>
<s3>DZA</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Faculté des Sciences Exactes, Université A. Mira</s1>
<s2>Béjaia 06000</s2>
<s3>DZA</s3>
<sZ>5 aut.</sZ>
</fA14>
<fA14 i1="04"><s1>Faculté des Sciences de l'Ingénieur, Université Ferhat Abbas, Sétif 1</s1>
<s2>Sétif 19000</s2>
<s3>DZA</s3>
<sZ>6 aut.</sZ>
</fA14>
<fA14 i1="05"><s1>CRTSE</s1>
<s2>Alger 16038</s2>
<s3>DZA</s3>
<sZ>5 aut.</sZ>
</fA14>
<fA20><s1>229-238</s1>
</fA20>
<fA21><s1>2014</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>13597</s2>
<s5>354000502763030360</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2014 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>41 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>14-0167333</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Thin solid films</s0>
</fA64>
<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Series of Ni thin films have been deposited by thermal evaporation onto glass, Si(111), Cu, mica and Al<sub>2</sub>
O<sub>3</sub>
 substrates with and without a Cu underlayer. The Ni thicknesses, t, are in the 4 to 163 nm range. The Cu underlayer has also been evaporated with a Cu thickness equal to 27, 52 and 90 nm. The effects of substrate, the Ni thickness and the Cu underlayer on the structural and electrical properties of Ni are investigated. Rutherford Backscattering Spectroscopy was used to probe the Ni/Substrate and Ni-Cu underlayer interfaces and to measure both Ni and Cu thicknesses. The texture, the strain and the grain size values were derived from X-ray diffraction experiments. The surface morphology is studied by means of a Scanning Electron Microscope. The electrical resistivity is measured by the four point probe. The Ni films grow with the <111> texture on all substrates. The Ni grain sizes D increase with increasing thickness for the glass, Si and mica substrates and decrease for the Cu one. The strain ε is positive for low thickness, decreases in magnitude and becomes negative as t increases. With the Cu underlayer, the growth mode goes through two phases: first, the stress (grain size) increases (decreases) up to a critical thickness t<sub>Cr</sub>
, then stress is relieved and grain size increases. All these results will be discussed and correlated.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B60H55J</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B60A16</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B70C50</s0>
</fC02>
<fC02 i1="04" i2="3"><s0>001B80A15A</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Structure surface</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Surface structure</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Morphologie surface</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Surface morphology</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Propriété électrique</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Electrical properties</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Couche mince</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Thin films</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Effet dimensionnel</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Size effect</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Evaporation</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Evaporation</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Verre</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Glass</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>RBS</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>RBS</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Interface</s0>
<s5>10</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Interfaces</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Texture</s0>
<s5>11</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Texture</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Grosseur grain</s0>
<s5>12</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Grain size</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Diffraction RX</s0>
<s5>13</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>XRD</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Microscopie électronique balayage</s0>
<s5>14</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Scanning electron microscopy</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Résistivité électrique</s0>
<s5>29</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Electric resistivity</s0>
<s5>29</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>Mécanisme croissance</s0>
<s5>30</s5>
</fC03>
<fC03 i1="15" i2="X" l="ENG"><s0>Growth mechanism</s0>
<s5>30</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA"><s0>Mecanismo crecimiento</s0>
<s5>30</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Effet contrainte</s0>
<s5>31</s5>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Stress effects</s0>
<s5>31</s5>
</fC03>
<fC03 i1="17" i2="X" l="FRE"><s0>Valeur critique</s0>
<s5>32</s5>
</fC03>
<fC03 i1="17" i2="X" l="ENG"><s0>Critical value</s0>
<s5>32</s5>
</fC03>
<fC03 i1="17" i2="X" l="SPA"><s0>Valor crítico</s0>
<s5>32</s5>
</fC03>
<fC03 i1="18" i2="X" l="FRE"><s0>Epaisseur couche</s0>
<s5>33</s5>
</fC03>
<fC03 i1="18" i2="X" l="ENG"><s0>Layer thickness</s0>
<s5>33</s5>
</fC03>
<fC03 i1="18" i2="X" l="SPA"><s0>Espesor capa</s0>
<s5>33</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>Nickel</s0>
<s2>NC</s2>
<s5>34</s5>
</fC03>
<fC03 i1="19" i2="3" l="ENG"><s0>Nickel</s0>
<s2>NC</s2>
<s5>34</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>Cuivre</s0>
<s2>NC</s2>
<s5>35</s5>
</fC03>
<fC03 i1="20" i2="3" l="ENG"><s0>Copper</s0>
<s2>NC</s2>
<s5>35</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>Substrat mica</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>Substrat Al2O3</s0>
<s4>INC</s4>
<s5>47</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>Substrat cuivre</s0>
<s4>INC</s4>
<s5>48</s5>
</fC03>
<fC03 i1="24" i2="3" l="FRE"><s0>Substrat silicium</s0>
<s4>INC</s4>
<s5>49</s5>
</fC03>
<fC03 i1="25" i2="3" l="FRE"><s0>6855J</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="26" i2="3" l="FRE"><s0>7350</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="27" i2="3" l="FRE"><s0>6855A</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fC03 i1="28" i2="3" l="FRE"><s0>8115A</s0>
<s4>INC</s4>
<s5>74</s5>
</fC03>
<fN21><s1>209</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

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	Serveur d'exploration sur le nickel au Maghreb
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Structure, surface morphology and electrical properties of evaporated Ni thin films: Effect of substrates, thickness and Cu underlayer

Structure, surface morphology and electrical properties of evaporated Ni thin films: Effect of substrates, thickness and Cu underlayer

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