NickelMaghrebV1, PascalFrancis, Curation, bibRecord, 000322

Study of insulating electrical conductivity in hydrogenated amorphous silicon-nickel alloys at very low temperature

Identifieur interne : 000322 ( PascalFrancis/Curation ); précédent : 000321; suivant : 000323

Study of insulating electrical conductivity in hydrogenated amorphous silicon-nickel alloys at very low temperature

Auteurs : A. Narjis [Maroc] ; A. El Kaaouachi [Maroc] ; L. Limouny [Maroc] ; S. Dlimi [Maroc] ; A. Sybous [Maroc] ; J. Hemine [Maroc] ; R. Abdia [Maroc] ; G. Biskupski [France]

Source :

Physica. B, Condensed matter [ 0921-4526 ] ; 2011.

RBID : Pascal:11-0440766

Descripteurs français

Pascal (Inist)
- Conductivité électrique, Transition métal isolant, Conduction saut, Interaction électron électron, Densité état électron, Niveau Fermi, Composition chimique, Point critique, Matériau amorphe hydrogéné, Nickel alliage, Alliage amorphe, Silicium alliage, Saut à distance variable.

English descriptors

KwdEn :
- Amorphous alloy, Amorphous hydrogenated material, Chemical composition, Critical points, Electrical conductivity, Electron-electron interactions, Electronic density of states, Fermi level, Hopping conduction, Metal-insulator transition, Nickel alloys, Silicon alloys.

Abstract

On the insulating side of the metal-insulator transition (MIT), the study of the effect of low temperatures T on the electrical transport in amorphous silicon-nickel alloys a-Si1-yNiy:H exhibits that the electrical conductivity follows, at the beginning, the Efros-Shklovskii Variable Range Hopping regime (ES VRH) with T-1/2. This behaviour showed that long range electron-electron interaction reduces the Density Of State of carriers (DOS) at the Fermi level and creates the Coulomb gap (CG). For T higher than a critical value of temperature Tc, we obtained the Mott Variable Range Hopping regime with T-1/4, indicating that the DOS becomes almost constant in the vicinity of the Fermi level. The critical temperature TC decreases with the content of nickel in the alloys.

A01	`01`	`1`		`@0 0921-4526`
A03		`1`		`@0 Physica, B Condens. matter`
A05				`@2 406`
A06				`@2 21`
A08	`01`	`1`	`ENG`	`@1 Study of insulating electrical conductivity in hydrogenated amorphous silicon-nickel alloys at very low temperature`
A11	`01`	`1`		`@1 NARJIS (A.)`
A11	`02`	`1`		`@1 EL KAAOUACHI (A.)`
A11	`03`	`1`		`@1 LIMOUNY (L.)`
A11	`04`	`1`		`@1 DLIMI (S.)`
A11	`05`	`1`		`@1 SYBOUS (A.)`
A11	`06`	`1`		`@1 HEMINE (J.)`
A11	`07`	`1`		`@1 ABDIA (R.)`
A11	`08`	`1`		`@1 BISKUPSKI (G.)`
A14	`01`			`@1 Research Group in ESNPS, Physics Department, University Ibn Zohr, Faculty of Sciences, B.P 8106, Hay Dakhla @2 80000 Agadir @3 MAR @Z 1 aut. @Z 2 aut. @Z 3 aut. @Z 4 aut. @Z 5 aut. @Z 7 aut.`
A14	`02`			`@1 Laboratoire de Physique de la Matiere Condensée, Faculté des Sciences et Techniques de Mohammadia, Departement de Physique @2 Mohammadia @3 MAR @Z 6 aut.`
A14	`03`			`@1 Laboratoire de Spectroscopie Hertzienne, LSH équipe des semi-conducteurs, Bâtiment P5, Université des Sciences et Technologies de LilleI @2 59 655 Villeneuve d'Ascq @3 FRA @Z 8 aut.`
A20				`@1 4155-4158`
A21				`@1 2011`
A23	`01`			`@0 ENG`
A43	`01`			`@1 INIST @2 145B @5 354000509926510320`
A44				`@0 0000 @1 © 2011 INIST-CNRS. All rights reserved.`
A45				`@0 12 ref.`
A47	`01`	`1`		`@0 11-0440766`
A60				`@1 P`
A61				`@0 A`
A64	`01`	`1`		`@0 Physica. B, Condensed matter`
A66	`01`			`@0 GBR`
C01	`01`		`ENG`	@0 On the insulating side of the metal-insulator transition (MIT), the study of the effect of low temperatures T on the electrical transport in amorphous silicon-nickel alloys a-Si1-yNiy:H exhibits that the electrical conductivity follows, at the beginning, the Efros-Shklovskii Variable Range Hopping regime (ES VRH) with T-1/2. This behaviour showed that long range electron-electron interaction reduces the Density Of State of carriers (DOS) at the Fermi level and creates the Coulomb gap (CG). For T higher than a critical value of temperature Tc, we obtained the Mott Variable Range Hopping regime with T-1/4, indicating that the DOS becomes almost constant in the vicinity of the Fermi level. The critical temperature TC decreases with the content of nickel in the alloys.
C02	`01`	`3`		`@0 001B70A30`
C02	`02`	`3`		`@0 001B70A23C`
C02	`03`	`3`		`@0 001B70B80N`
C03	`01`	`3`	`FRE`	`@0 Conductivité électrique @5 02`
C03	`01`	`3`	`ENG`	`@0 Electrical conductivity @5 02`
C03	`02`	`3`	`FRE`	`@0 Transition métal isolant @5 03`
C03	`02`	`3`	`ENG`	`@0 Metal-insulator transition @5 03`
C03	`03`	`3`	`FRE`	`@0 Conduction saut @5 04`
C03	`03`	`3`	`ENG`	`@0 Hopping conduction @5 04`
C03	`04`	`3`	`FRE`	`@0 Interaction électron électron @5 05`
C03	`04`	`3`	`ENG`	`@0 Electron-electron interactions @5 05`
C03	`05`	`3`	`FRE`	`@0 Densité état électron @5 06`
C03	`05`	`3`	`ENG`	`@0 Electronic density of states @5 06`
C03	`06`	`3`	`FRE`	`@0 Niveau Fermi @5 07`
C03	`06`	`3`	`ENG`	`@0 Fermi level @5 07`
C03	`07`	`3`	`FRE`	`@0 Composition chimique @5 08`
C03	`07`	`3`	`ENG`	`@0 Chemical composition @5 08`
C03	`08`	`3`	`FRE`	`@0 Point critique @5 10`
C03	`08`	`3`	`ENG`	`@0 Critical points @5 10`
C03	`09`	`3`	`FRE`	`@0 Matériau amorphe hydrogéné @5 15`
C03	`09`	`3`	`ENG`	`@0 Amorphous hydrogenated material @5 15`
C03	`10`	`3`	`FRE`	`@0 Nickel alliage @5 16`
C03	`10`	`3`	`ENG`	`@0 Nickel alloys @5 16`
C03	`11`	`X`	`FRE`	`@0 Alliage amorphe @5 17`
C03	`11`	`X`	`ENG`	`@0 Amorphous alloy @5 17`
C03	`11`	`X`	`SPA`	`@0 Aleación amorfa @5 17`
C03	`12`	`3`	`FRE`	`@0 Silicium alliage @5 18`
C03	`12`	`3`	`ENG`	`@0 Silicon alloys @5 18`
C03	`13`	`3`	`FRE`	`@0 Saut à distance variable @4 INC @5 63`
N21				`@1 297`

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<series><title level="j" type="main">Physica. B, Condensed matter</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Amorphous alloy</term>
<term>Amorphous hydrogenated material</term>
<term>Chemical composition</term>
<term>Critical points</term>
<term>Electrical conductivity</term>
<term>Electron-electron interactions</term>
<term>Electronic density of states</term>
<term>Fermi level</term>
<term>Hopping conduction</term>
<term>Metal-insulator transition</term>
<term>Nickel alloys</term>
<term>Silicon alloys</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Conductivité électrique</term>
<term>Transition métal isolant</term>
<term>Conduction saut</term>
<term>Interaction électron électron</term>
<term>Densité état électron</term>
<term>Niveau Fermi</term>
<term>Composition chimique</term>
<term>Point critique</term>
<term>Matériau amorphe hydrogéné</term>
<term>Nickel alliage</term>
<term>Alliage amorphe</term>
<term>Silicium alliage</term>
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<front><div type="abstract" xml:lang="en">On the insulating side of the metal-insulator transition (MIT), the study of the effect of low temperatures T on the electrical transport in amorphous silicon-nickel alloys a-Si1-yNiy:H exhibits that the electrical conductivity follows, at the beginning, the Efros-Shklovskii Variable Range Hopping regime (ES VRH) with T-1/2. This behaviour showed that long range electron-electron interaction reduces the Density Of State of carriers (DOS) at the Fermi level and creates the Coulomb gap (CG). For T higher than a critical value of temperature Tc, we obtained the Mott Variable Range Hopping regime with T-1/4, indicating that the DOS becomes almost constant in the vicinity of the Fermi level. The critical temperature TC decreases with the content of nickel in the alloys.</div>
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<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Physica. B, Condensed matter</s0>
</fA64>
<fA66 i1="01"><s0>GBR</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>On the insulating side of the metal-insulator transition (MIT), the study of the effect of low temperatures T on the electrical transport in amorphous silicon-nickel alloys a-Si1-yNiy:H exhibits that the electrical conductivity follows, at the beginning, the Efros-Shklovskii Variable Range Hopping regime (ES VRH) with T-1/2. This behaviour showed that long range electron-electron interaction reduces the Density Of State of carriers (DOS) at the Fermi level and creates the Coulomb gap (CG). For T higher than a critical value of temperature Tc, we obtained the Mott Variable Range Hopping regime with T-1/4, indicating that the DOS becomes almost constant in the vicinity of the Fermi level. The critical temperature TC decreases with the content of nickel in the alloys.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B70A30</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B70A23C</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B70B80N</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Conductivité électrique</s0>
<s5>02</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Electrical conductivity</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Transition métal isolant</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Metal-insulator transition</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Conduction saut</s0>
<s5>04</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Hopping conduction</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Interaction électron électron</s0>
<s5>05</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Electron-electron interactions</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Densité état électron</s0>
<s5>06</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Electronic density of states</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Niveau Fermi</s0>
<s5>07</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Fermi level</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Composition chimique</s0>
<s5>08</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Chemical composition</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Point critique</s0>
<s5>10</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Critical points</s0>
<s5>10</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Matériau amorphe hydrogéné</s0>
<s5>15</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Amorphous hydrogenated material</s0>
<s5>15</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Nickel alliage</s0>
<s5>16</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Nickel alloys</s0>
<s5>16</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Alliage amorphe</s0>
<s5>17</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Amorphous alloy</s0>
<s5>17</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Aleación amorfa</s0>
<s5>17</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Silicium alliage</s0>
<s5>18</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Silicon alloys</s0>
<s5>18</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Saut à distance variable</s0>
<s4>INC</s4>
<s5>63</s5>
</fC03>
<fN21><s1>297</s1>
</fN21>
</pA>
</standard>
</inist>
</record>

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	Serveur d'exploration sur le nickel au Maghreb
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Study of insulating electrical conductivity in hydrogenated amorphous silicon-nickel alloys at very low temperature

Study of insulating electrical conductivity in hydrogenated amorphous silicon-nickel alloys at very low temperature

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