NickelMaghrebV1, PascalFrancis, Corpus, bibRecord, 000506

Photoconductive WSe2 thin films obtained by solid state reaction in the presence of a thin nickel layer

Identifieur interne : 000506 ( PascalFrancis/Corpus ); précédent : 000505; suivant : 000507

Photoconductive WSe2 thin films obtained by solid state reaction in the presence of a thin nickel layer

Auteurs : N. Guettari ; J. Ouerfelli ; J. C. Bernede ; A. Khelil ; J. Pouzet ; A. Conan

Source :

Materials chemistry and physics [ 0254-0584 ] ; 1998.

RBID : Pascal:98-0078711

Descripteurs français

Pascal (Inist)
- Photoconductivité, Propriété électrique, Conductivité électrique, Couche mince, Tungstène séléniure, Réaction état solide, Traitement thermique, Recuit, Nickel, Diffraction RX, Etude expérimentale, Spectrométrie photoélectron, SEM, 7361L.

English descriptors

KwdEn :
- Annealing, Electrical conductivity, Electrical properties, Experimental study, Heat treatments, Nickel, Photoconductivity, Photoelectron spectroscopy, SEM, Solid state reaction, Thin films, Tungsten selenides, XRD.

Abstract

Photoconductive WSe₂ thin films have been obtained by post-annealing treatments of W/Se/W/...W/Se/W/Se thin layers sequentially deposited onto a thin Ni layer. The samples were first annealed under argon flow in an open reactor at 1093 K for 30 min. If the films obtained were textured and crystallized in the 2H-WSe₂ structure, they were partly oxidized and selenium deficient. The oxide was mainly localized at the surface of the films. Therefore the films were reduced in selenium atmosphere at 823 K for 16 h. To avoid surface contamination of the films by selenium condensation during their cooling they were post-annealed, under vacuum, at 703 K for 4 h. At the end of the process the films so obtained were not only crystallized in the 2H-WSe2 structure and textured with the c axis of the crystallites perpendicular to the plane of the substrate, but they were also stoichiometric while the surface oxidation has nearly vanished. The room temperature conductivity of these films obtained with nickel is one to two orders of magnitude higher than the one obtained with the same technique without nickel. These films are photoconductive with photocurrents comparable to those measured in other films obtained in the presence of nickel but by other processes such as sputtering.

Notice en format standard (ISO 2709)

Pour connaître la documentation sur le format Inist Standard.

A01	`01`	`1`		`@0 0254-0584`
A02	`01`			`@0 MCHPDR`
A03		`1`		`@0 Mater. chem. phys.`
A05				`@2 52`
A06				`@2 1`
A08	`01`	`1`	`ENG`	`@1 Photoconductive WSe₂ thin films obtained by solid state reaction in the presence of a thin nickel layer`
A11	`01`	`1`		`@1 GUETTARI (N.)`
A11	`02`	`1`		`@1 OUERFELLI (J.)`
A11	`03`	`1`		`@1 BERNEDE (J. C.)`
A11	`04`	`1`		`@1 KHELIL (A.)`
A11	`05`	`1`		`@1 POUZET (J.)`
A11	`06`	`1`		`@1 CONAN (A.)`
A14	`01`			`@1 LPMCE, Institut de Physique, Université d'Oran Es-Sénia, BP No @2 1642 Oran @3 DZA @Z 1 aut. @Z 4 aut.`
A14	`02`			`@1 GPSE, Equipe Couches Minces et Matériaux Nouveaux, FSTN, 2 rue de la Houssinière, BP 92208 @2 44322 Nantes @3 FRA @Z 2 aut. @Z 3 aut. @Z 5 aut. @Z 6 aut.`
A20				`@1 83-88`
A21				`@1 1998`
A23	`01`			`@0 ENG`
A43	`01`			`@1 INIST @2 17552 @5 354000077408070130`
A44				`@0 0000 @1 © 1998 INIST-CNRS. All rights reserved.`
A45				`@0 25 ref.`
A47	`01`	`1`		`@0 98-0078711`
A60				`@1 P`
A61				`@0 A`
A64		`1`		`@0 Materials chemistry and physics`
A66	`01`			`@0 CHE`
C01	`01`		`ENG`	@0 Photoconductive WSe₂ thin films have been obtained by post-annealing treatments of W/Se/W/...W/Se/W/Se thin layers sequentially deposited onto a thin Ni layer. The samples were first annealed under argon flow in an open reactor at 1093 K for 30 min. If the films obtained were textured and crystallized in the 2H-WSe₂ structure, they were partly oxidized and selenium deficient. The oxide was mainly localized at the surface of the films. Therefore the films were reduced in selenium atmosphere at 823 K for 16 h. To avoid surface contamination of the films by selenium condensation during their cooling they were post-annealed, under vacuum, at 703 K for 4 h. At the end of the process the films so obtained were not only crystallized in the 2H-WSe2 structure and textured with the c axis of the crystallites perpendicular to the plane of the substrate, but they were also stoichiometric while the surface oxidation has nearly vanished. The room temperature conductivity of these films obtained with nickel is one to two orders of magnitude higher than the one obtained with the same technique without nickel. These films are photoconductive with photocurrents comparable to those measured in other films obtained in the presence of nickel but by other processes such as sputtering.
C02	`01`	`3`		`@0 001B70C61L`
C03	`01`	`3`	`FRE`	`@0 Photoconductivité @5 01`
C03	`01`	`3`	`ENG`	`@0 Photoconductivity @5 01`
C03	`02`	`3`	`FRE`	`@0 Propriété électrique @5 02`
C03	`02`	`3`	`ENG`	`@0 Electrical properties @5 02`
C03	`03`	`3`	`FRE`	`@0 Conductivité électrique @5 03`
C03	`03`	`3`	`ENG`	`@0 Electrical conductivity @5 03`
C03	`04`	`3`	`FRE`	`@0 Couche mince @5 04`
C03	`04`	`3`	`ENG`	`@0 Thin films @5 04`
C03	`05`	`3`	`FRE`	`@0 Tungstène séléniure @2 NK @5 05`
C03	`05`	`3`	`ENG`	`@0 Tungsten selenides @2 NK @5 05`
C03	`06`	`X`	`FRE`	`@0 Réaction état solide @5 06`
C03	`06`	`X`	`ENG`	`@0 Solid state reaction @5 06`
C03	`06`	`X`	`GER`	`@0 Festkoerperreaktion @5 06`
C03	`06`	`X`	`SPA`	`@0 Reacción estado sólido @5 06`
C03	`07`	`3`	`FRE`	`@0 Traitement thermique @5 07`
C03	`07`	`3`	`ENG`	`@0 Heat treatments @5 07`
C03	`08`	`3`	`FRE`	`@0 Recuit @5 08`
C03	`08`	`3`	`ENG`	`@0 Annealing @5 08`
C03	`09`	`3`	`FRE`	`@0 Nickel @2 NC @5 09`
C03	`09`	`3`	`ENG`	`@0 Nickel @2 NC @5 09`
C03	`10`	`3`	`FRE`	`@0 Diffraction RX @5 10`
C03	`10`	`3`	`ENG`	`@0 XRD @5 10`
C03	`11`	`3`	`FRE`	`@0 Etude expérimentale @5 11`
C03	`11`	`3`	`ENG`	`@0 Experimental study @5 11`
C03	`12`	`3`	`FRE`	`@0 Spectrométrie photoélectron @5 23`
C03	`12`	`3`	`ENG`	`@0 Photoelectron spectroscopy @5 23`
C03	`13`	`3`	`FRE`	`@0 SEM @5 24`
C03	`13`	`3`	`ENG`	`@0 SEM @5 24`
C03	`14`	`3`	`FRE`	`@0 7361L @2 PAC @4 INC @5 95`
N21				`@1 047`

Format Inist (serveur)

NO :	PASCAL 98-0078711 INIST
ET :	Photoconductive WSe₂ thin films obtained by solid state reaction in the presence of a thin nickel layer
AU :	GUETTARI (N.); OUERFELLI (J.); BERNEDE (J. C.); KHELIL (A.); POUZET (J.); CONAN (A.)
AF :	LPMCE, Institut de Physique, Université d'Oran Es-Sénia, BP No/1642 Oran/Algérie (1 aut., 4 aut.); GPSE, Equipe Couches Minces et Matériaux Nouveaux, FSTN, 2 rue de la Houssinière, BP 92208/44322 Nantes/France (2 aut., 3 aut., 5 aut., 6 aut.)
DT :	Publication en série; Niveau analytique
SO :	Materials chemistry and physics; ISSN 0254-0584; Coden MCHPDR; Suisse; Da. 1998; Vol. 52; No. 1; Pp. 83-88; Bibl. 25 ref.
LA :	Anglais
EA :	Photoconductive WSe₂ thin films have been obtained by post-annealing treatments of W/Se/W/...W/Se/W/S e thin layers sequentially deposited onto a thin Ni layer. The samples were first annealed under argon flow in an open reactor at 1093 K for 30 min. If the films obtained were textured and crystallized in the 2H-WSe₂ structure, they were partly oxidized and selenium deficient. The oxide was mainly localized at the surface of the films. Therefore the films were reduced in selenium atmosphere at 823 K for 16 h. To avoid surface contamination of the films by selenium condensation during their cooling they were post-annealed, under vacuum, at 703 K for 4 h. At the end of the process the films so obtained were not only crystallized in the 2H-WSe2 structure and textured with the c axis of the crystallites perpendicular to the plane of the substrate, but they were also stoichiometric while the surface oxidation has nearly vanished. The room temperature conductivity of these films obtained with nickel is one to two orders of magnitude higher than the one obtained with the same technique without nickel. These films are photoconductive with photocurrents comparable to those measured in other films obtained in the presence of nickel but by other processes such as sputtering.
CC :	001B70C61L
FD :	Photoconductivité; Propriété électrique; Conductivité électrique; Couche mince; Tungstène séléniure; Réaction état solide; Traitement thermique; Recuit; Nickel; Diffraction RX; Etude expérimentale; Spectrométrie photoélectron; SEM; 7361L
ED :	Photoconductivity; Electrical properties; Electrical conductivity; Thin films; Tungsten selenides; Solid state reaction; Heat treatments; Annealing; Nickel; XRD; Experimental study; Photoelectron spectroscopy; SEM
GD :	Festkoerperreaktion
SD :	Reacción estado sólido
LO :	INIST-17552.354000077408070130
ID :	98-0078711

Links to Exploration step

Pascal:98-0078711

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Photoconductive WSe<sub>2</sub>
 thin films obtained by solid state reaction in the presence of a thin nickel layer</title>
<author><name sortKey="Guettari, N" sort="Guettari, N" uniqKey="Guettari N" first="N." last="Guettari">N. Guettari</name>
<affiliation><inist:fA14 i1="01"><s1>LPMCE, Institut de Physique, Université d'Oran Es-Sénia, BP No</s1>
<s2>1642 Oran</s2>
<s3>DZA</s3>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
</affiliation>
</author>
<author><name sortKey="Ouerfelli, J" sort="Ouerfelli, J" uniqKey="Ouerfelli J" first="J." last="Ouerfelli">J. Ouerfelli</name>
<affiliation><inist:fA14 i1="02"><s1>GPSE, Equipe Couches Minces et Matériaux Nouveaux, FSTN, 2 rue de la Houssinière, BP 92208</s1>
<s2>44322 Nantes</s2>
<s3>FRA</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
</affiliation>
</author>
<author><name sortKey="Bernede, J C" sort="Bernede, J C" uniqKey="Bernede J" first="J. C." last="Bernede">J. C. Bernede</name>
<affiliation><inist:fA14 i1="02"><s1>GPSE, Equipe Couches Minces et Matériaux Nouveaux, FSTN, 2 rue de la Houssinière, BP 92208</s1>
<s2>44322 Nantes</s2>
<s3>FRA</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
</affiliation>
</author>
<author><name sortKey="Khelil, A" sort="Khelil, A" uniqKey="Khelil A" first="A." last="Khelil">A. Khelil</name>
<affiliation><inist:fA14 i1="01"><s1>LPMCE, Institut de Physique, Université d'Oran Es-Sénia, BP No</s1>
<s2>1642 Oran</s2>
<s3>DZA</s3>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
</affiliation>
</author>
<author><name sortKey="Pouzet, J" sort="Pouzet, J" uniqKey="Pouzet J" first="J." last="Pouzet">J. Pouzet</name>
<affiliation><inist:fA14 i1="02"><s1>GPSE, Equipe Couches Minces et Matériaux Nouveaux, FSTN, 2 rue de la Houssinière, BP 92208</s1>
<s2>44322 Nantes</s2>
<s3>FRA</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
</affiliation>
</author>
<author><name sortKey="Conan, A" sort="Conan, A" uniqKey="Conan A" first="A." last="Conan">A. Conan</name>
<affiliation><inist:fA14 i1="02"><s1>GPSE, Equipe Couches Minces et Matériaux Nouveaux, FSTN, 2 rue de la Houssinière, BP 92208</s1>
<s2>44322 Nantes</s2>
<s3>FRA</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="wicri:source">INIST</idno>
<idno type="inist">98-0078711</idno>
<date when="1998">1998</date>
<idno type="stanalyst">PASCAL 98-0078711 INIST</idno>
<idno type="RBID">Pascal:98-0078711</idno>
<idno type="wicri:Area/PascalFrancis/Corpus">000506</idno>
</publicationStmt>
<sourceDesc><biblStruct><analytic><title xml:lang="en" level="a">Photoconductive WSe<sub>2</sub>
 thin films obtained by solid state reaction in the presence of a thin nickel layer</title>
<author><name sortKey="Guettari, N" sort="Guettari, N" uniqKey="Guettari N" first="N." last="Guettari">N. Guettari</name>
<affiliation><inist:fA14 i1="01"><s1>LPMCE, Institut de Physique, Université d'Oran Es-Sénia, BP No</s1>
<s2>1642 Oran</s2>
<s3>DZA</s3>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
</affiliation>
</author>
<author><name sortKey="Ouerfelli, J" sort="Ouerfelli, J" uniqKey="Ouerfelli J" first="J." last="Ouerfelli">J. Ouerfelli</name>
<affiliation><inist:fA14 i1="02"><s1>GPSE, Equipe Couches Minces et Matériaux Nouveaux, FSTN, 2 rue de la Houssinière, BP 92208</s1>
<s2>44322 Nantes</s2>
<s3>FRA</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
</affiliation>
</author>
<author><name sortKey="Bernede, J C" sort="Bernede, J C" uniqKey="Bernede J" first="J. C." last="Bernede">J. C. Bernede</name>
<affiliation><inist:fA14 i1="02"><s1>GPSE, Equipe Couches Minces et Matériaux Nouveaux, FSTN, 2 rue de la Houssinière, BP 92208</s1>
<s2>44322 Nantes</s2>
<s3>FRA</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
</affiliation>
</author>
<author><name sortKey="Khelil, A" sort="Khelil, A" uniqKey="Khelil A" first="A." last="Khelil">A. Khelil</name>
<affiliation><inist:fA14 i1="01"><s1>LPMCE, Institut de Physique, Université d'Oran Es-Sénia, BP No</s1>
<s2>1642 Oran</s2>
<s3>DZA</s3>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
</affiliation>
</author>
<author><name sortKey="Pouzet, J" sort="Pouzet, J" uniqKey="Pouzet J" first="J." last="Pouzet">J. Pouzet</name>
<affiliation><inist:fA14 i1="02"><s1>GPSE, Equipe Couches Minces et Matériaux Nouveaux, FSTN, 2 rue de la Houssinière, BP 92208</s1>
<s2>44322 Nantes</s2>
<s3>FRA</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
</affiliation>
</author>
<author><name sortKey="Conan, A" sort="Conan, A" uniqKey="Conan A" first="A." last="Conan">A. Conan</name>
<affiliation><inist:fA14 i1="02"><s1>GPSE, Equipe Couches Minces et Matériaux Nouveaux, FSTN, 2 rue de la Houssinière, BP 92208</s1>
<s2>44322 Nantes</s2>
<s3>FRA</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
</affiliation>
</author>
</analytic>
<series><title level="j" type="main">Materials chemistry and physics</title>
<title level="j" type="abbreviated">Mater. chem. phys.</title>
<idno type="ISSN">0254-0584</idno>
<imprint><date when="1998">1998</date>
</imprint>
</series>
</biblStruct>
</sourceDesc>
<seriesStmt><title level="j" type="main">Materials chemistry and physics</title>
<title level="j" type="abbreviated">Mater. chem. phys.</title>
<idno type="ISSN">0254-0584</idno>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Annealing</term>
<term>Electrical conductivity</term>
<term>Electrical properties</term>
<term>Experimental study</term>
<term>Heat treatments</term>
<term>Nickel</term>
<term>Photoconductivity</term>
<term>Photoelectron spectroscopy</term>
<term>SEM</term>
<term>Solid state reaction</term>
<term>Thin films</term>
<term>Tungsten selenides</term>
<term>XRD</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Photoconductivité</term>
<term>Propriété électrique</term>
<term>Conductivité électrique</term>
<term>Couche mince</term>
<term>Tungstène séléniure</term>
<term>Réaction état solide</term>
<term>Traitement thermique</term>
<term>Recuit</term>
<term>Nickel</term>
<term>Diffraction RX</term>
<term>Etude expérimentale</term>
<term>Spectrométrie photoélectron</term>
<term>SEM</term>
<term>7361L</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Photoconductive WSe<sub>2</sub>
 thin films have been obtained by post-annealing treatments of W/Se/W/...W/Se/W/Se thin layers sequentially deposited onto a thin Ni layer. The samples were first annealed under argon flow in an open reactor at 1093 K for 30 min. If the films obtained were textured and crystallized in the 2H-WSe<sub>2</sub>
 structure, they were partly oxidized and selenium deficient. The oxide was mainly localized at the surface of the films. Therefore the films were reduced in selenium atmosphere at 823 K for 16 h. To avoid surface contamination of the films by selenium condensation during their cooling they were post-annealed, under vacuum, at 703 K for 4 h. At the end of the process the films so obtained were not only crystallized in the 2H-WSe2 structure and textured with the c axis of the crystallites perpendicular to the plane of the substrate, but they were also stoichiometric while the surface oxidation has nearly vanished. The room temperature conductivity of these films obtained with nickel is one to two orders of magnitude higher than the one obtained with the same technique without nickel. These films are photoconductive with photocurrents comparable to those measured in other films obtained in the presence of nickel but by other processes such as sputtering.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0254-0584</s0>
</fA01>
<fA02 i1="01"><s0>MCHPDR</s0>
</fA02>
<fA03 i2="1"><s0>Mater. chem. phys.</s0>
</fA03>
<fA05><s2>52</s2>
</fA05>
<fA06><s2>1</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Photoconductive WSe<sub>2</sub>
 thin films obtained by solid state reaction in the presence of a thin nickel layer</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>GUETTARI (N.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>OUERFELLI (J.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>BERNEDE (J. C.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>KHELIL (A.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>POUZET (J.)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>CONAN (A.)</s1>
</fA11>
<fA14 i1="01"><s1>LPMCE, Institut de Physique, Université d'Oran Es-Sénia, BP No</s1>
<s2>1642 Oran</s2>
<s3>DZA</s3>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>GPSE, Equipe Couches Minces et Matériaux Nouveaux, FSTN, 2 rue de la Houssinière, BP 92208</s1>
<s2>44322 Nantes</s2>
<s3>FRA</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</fA14>
<fA20><s1>83-88</s1>
</fA20>
<fA21><s1>1998</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>17552</s2>
<s5>354000077408070130</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 1998 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>25 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>98-0078711</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i2="1"><s0>Materials chemistry and physics</s0>
</fA64>
<fA66 i1="01"><s0>CHE</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Photoconductive WSe<sub>2</sub>
 thin films have been obtained by post-annealing treatments of W/Se/W/...W/Se/W/Se thin layers sequentially deposited onto a thin Ni layer. The samples were first annealed under argon flow in an open reactor at 1093 K for 30 min. If the films obtained were textured and crystallized in the 2H-WSe<sub>2</sub>
 structure, they were partly oxidized and selenium deficient. The oxide was mainly localized at the surface of the films. Therefore the films were reduced in selenium atmosphere at 823 K for 16 h. To avoid surface contamination of the films by selenium condensation during their cooling they were post-annealed, under vacuum, at 703 K for 4 h. At the end of the process the films so obtained were not only crystallized in the 2H-WSe2 structure and textured with the c axis of the crystallites perpendicular to the plane of the substrate, but they were also stoichiometric while the surface oxidation has nearly vanished. The room temperature conductivity of these films obtained with nickel is one to two orders of magnitude higher than the one obtained with the same technique without nickel. These films are photoconductive with photocurrents comparable to those measured in other films obtained in the presence of nickel but by other processes such as sputtering.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B70C61L</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Photoconductivité</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Photoconductivity</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Propriété électrique</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Electrical properties</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Conductivité électrique</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Electrical conductivity</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Couche mince</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Thin films</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Tungstène séléniure</s0>
<s2>NK</s2>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Tungsten selenides</s0>
<s2>NK</s2>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Réaction état solide</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Solid state reaction</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="GER"><s0>Festkoerperreaktion</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Reacción estado sólido</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Traitement thermique</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Heat treatments</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Recuit</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Annealing</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Nickel</s0>
<s2>NC</s2>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Nickel</s0>
<s2>NC</s2>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Diffraction RX</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>XRD</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Etude expérimentale</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Experimental study</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Spectrométrie photoélectron</s0>
<s5>23</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Photoelectron spectroscopy</s0>
<s5>23</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>SEM</s0>
<s5>24</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>SEM</s0>
<s5>24</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>7361L</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>95</s5>
</fC03>
<fN21><s1>047</s1>
</fN21>
</pA>
</standard>
<server><NO>PASCAL 98-0078711 INIST</NO>
<ET>Photoconductive WSe<sub>2</sub>
 thin films obtained by solid state reaction in the presence of a thin nickel layer</ET>
<AU>GUETTARI (N.); OUERFELLI (J.); BERNEDE (J. C.); KHELIL (A.); POUZET (J.); CONAN (A.)</AU>
<AF>LPMCE, Institut de Physique, Université d'Oran Es-Sénia, BP No/1642 Oran/Algérie (1 aut., 4 aut.); GPSE, Equipe Couches Minces et Matériaux Nouveaux, FSTN, 2 rue de la Houssinière, BP 92208/44322 Nantes/France (2 aut., 3 aut., 5 aut., 6 aut.)</AF>
<DT>Publication en série; Niveau analytique</DT>
<SO>Materials chemistry and physics; ISSN 0254-0584; Coden MCHPDR; Suisse; Da. 1998; Vol. 52; No. 1; Pp. 83-88; Bibl. 25 ref.</SO>
<LA>Anglais</LA>
<EA>Photoconductive WSe<sub>2</sub>
 thin films have been obtained by post-annealing treatments of W/Se/W/...W/Se/W/S e thin layers sequentially deposited onto a thin Ni layer. The samples were first annealed under argon flow in an open reactor at 1093 K for 30 min. If the films obtained were textured and crystallized in the 2H-WSe<sub>2</sub>
 structure, they were partly oxidized and selenium deficient. The oxide was mainly localized at the surface of the films. Therefore the films were reduced in selenium atmosphere at 823 K for 16 h. To avoid surface contamination of the films by selenium condensation during their cooling they were post-annealed, under vacuum, at 703 K for 4 h. At the end of the process the films so obtained were not only crystallized in the 2H-WSe2 structure and textured with the c axis of the crystallites perpendicular to the plane of the substrate, but they were also stoichiometric while the surface oxidation has nearly vanished. The room temperature conductivity of these films obtained with nickel is one to two orders of magnitude higher than the one obtained with the same technique without nickel. These films are photoconductive with photocurrents comparable to those measured in other films obtained in the presence of nickel but by other processes such as sputtering.</EA>
<CC>001B70C61L</CC>
<FD>Photoconductivité; Propriété électrique; Conductivité électrique; Couche mince; Tungstène séléniure; Réaction état solide; Traitement thermique; Recuit; Nickel; Diffraction RX; Etude expérimentale; Spectrométrie photoélectron; SEM; 7361L</FD>
<ED>Photoconductivity; Electrical properties; Electrical conductivity; Thin films; Tungsten selenides; Solid state reaction; Heat treatments; Annealing; Nickel; XRD; Experimental study; Photoelectron spectroscopy; SEM</ED>
<GD>Festkoerperreaktion</GD>
<SD>Reacción estado sólido</SD>
<LO>INIST-17552.354000077408070130</LO>
<ID>98-0078711</ID>
</server>
</inist>
</record>

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	Serveur d'exploration sur le nickel au Maghreb
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Photoconductive WSe2 thin films obtained by solid state reaction in the presence of a thin nickel layer

Photoconductive WSe2 thin films obtained by solid state reaction in the presence of a thin nickel layer

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