NickelMaghrebV1, PascalFrancis, Corpus, bibRecord, 000104

Structural characterization of Ni and Ni/Ti ohmic contact on n-type 4H-SiC

Identifieur interne : 000104 ( PascalFrancis/Corpus ); précédent : 000103; suivant : 000105

Structural characterization of Ni and Ni/Ti ohmic contact on n-type 4H-SiC

Auteurs : M. Siad ; M. Abdesselam ; N. Souami ; A. C. Chami

Source :

Applied surface science [ 0169-4332 ] ; 2011.

RBID : Pascal:12-0115031

Descripteurs français

Pascal (Inist)
- Nickel, Contact ohmique, Semiconducteur type n, Métal transition, Titane, RBS, Microscopie électronique balayage, Carbure de silicium, Ni, C Si, SiC, Ti, Composé minéral.

English descriptors

KwdEn :
- Inorganic compounds, Nickel, Ohmic contacts, RBS, Scanning electron microscopy, Silicon carbide, Titanium, Transition elements, n type semiconductor.

Abstract

In this study, we report on the structural characterization of Ni layer and Ni/Ti bilayer contacts on n-type 4H-SiC. The resulting Ni-silicides and the redistribution of carbon, after annealing at 950°C, in the Ni/SiC and the Ni/Ti/SiC contacts are particularly studied by Rutherford Backscattering Spectrometry (RBS) at E_α ₌ 3.2 MeV, nuclear reaction analysis (NRA) at E_d = 1 MeV, scanning electron microscopy (SEM) and Energy Dispersive X-ray Spectrometry (EDS) techniques.

Notice en format standard (ISO 2709)

Pour connaître la documentation sur le format Inist Standard.

A01	`01`	`1`		`@0 0169-4332`
A03		`1`		`@0 Appl. surf. sci.`
A05				`@2 257`
A06				`@2 24`
A08	`01`	`1`	`ENG`	`@1 Structural characterization of Ni and Ni/Ti ohmic contact on n-type 4H-SiC`
A11	`01`	`1`		`@1 SIAD (M.)`
A11	`02`	`1`		`@1 ABDESSELAM (M.)`
A11	`03`	`1`		`@1 SOUAMI (N.)`
A11	`04`	`1`		`@1 CHAMI (A. C.)`
A14	`01`			`@1 Centre de Recherche Nucléaire d'Alger, 02 Bd Frantz Fanon @2 Alger @3 DZA @Z 1 aut. @Z 3 aut.`
A14	`02`			`@1 USTHB, Faculté de Physique, BP 32, El Alia, Bab Ezzouar @2 Alger @3 DZA @Z 2 aut. @Z 4 aut.`
A20				`@1 10737-10742`
A21				`@1 2011`
A23	`01`			`@0 ENG`
A43	`01`			`@1 INIST @2 16002 @5 354000509968190700`
A44				`@0 0000 @1 © 2012 INIST-CNRS. All rights reserved.`
A45				`@0 24 ref.`
A47	`01`	`1`		`@0 12-0115031`
A60				`@1 P`
A61				`@0 A`
A64	`01`	`1`		`@0 Applied surface science`
A66	`01`			`@0 NLD`
C01	`01`		`ENG`	`@0 In this study, we report on the structural characterization of Ni layer and Ni/Ti bilayer contacts on n-type 4H-SiC. The resulting Ni-silicides and the redistribution of carbon, after annealing at 950°C, in the Ni/SiC and the Ni/Ti/SiC contacts are particularly studied by Rutherford Backscattering Spectrometry (RBS) at E_α ₌ 3.2 MeV, nuclear reaction analysis (NRA) at E_d = 1 MeV, scanning electron microscopy (SEM) and Energy Dispersive X-ray Spectrometry (EDS) techniques.`
C02	`01`	`3`		`@0 001B60`
C02	`02`	`3`		`@0 001B70`
C02	`03`	`3`		`@0 001B80`
C03	`01`	`3`	`FRE`	`@0 Nickel @2 NC @5 01`
C03	`01`	`3`	`ENG`	`@0 Nickel @2 NC @5 01`
C03	`02`	`3`	`FRE`	`@0 Contact ohmique @5 02`
C03	`02`	`3`	`ENG`	`@0 Ohmic contacts @5 02`
C03	`03`	`3`	`FRE`	`@0 Semiconducteur type n @5 03`
C03	`03`	`3`	`ENG`	`@0 n type semiconductor @5 03`
C03	`04`	`3`	`FRE`	`@0 Métal transition @5 04`
C03	`04`	`3`	`ENG`	`@0 Transition elements @5 04`
C03	`05`	`3`	`FRE`	`@0 Titane @2 NC @5 05`
C03	`05`	`3`	`ENG`	`@0 Titanium @2 NC @5 05`
C03	`06`	`3`	`FRE`	`@0 RBS @5 06`
C03	`06`	`3`	`ENG`	`@0 RBS @5 06`
C03	`07`	`3`	`FRE`	`@0 Microscopie électronique balayage @5 07`
C03	`07`	`3`	`ENG`	`@0 Scanning electron microscopy @5 07`
C03	`08`	`X`	`FRE`	`@0 Carbure de silicium @5 15`
C03	`08`	`X`	`ENG`	`@0 Silicon carbide @5 15`
C03	`08`	`X`	`SPA`	`@0 Silicio carburo @5 15`
C03	`09`	`3`	`FRE`	`@0 Ni @4 INC @5 32`
C03	`10`	`3`	`FRE`	`@0 C Si @4 INC @5 33`
C03	`11`	`3`	`FRE`	`@0 SiC @4 INC @5 34`
C03	`12`	`3`	`FRE`	`@0 Ti @4 INC @5 35`
C03	`13`	`3`	`FRE`	`@0 Composé minéral @5 62`
C03	`13`	`3`	`ENG`	`@0 Inorganic compounds @5 62`
N21				`@1 086`
N44	`01`			`@1 OTO`
N82				`@1 OTO`

Format Inist (serveur)

NO :	PASCAL 12-0115031 INIST
ET :	Structural characterization of Ni and Ni/Ti ohmic contact on n-type 4H-SiC
AU :	SIAD (M.); ABDESSELAM (M.); SOUAMI (N.); CHAMI (A. C.)
AF :	Centre de Recherche Nucléaire d'Alger, 02 Bd Frantz Fanon/Alger/Algérie (1 aut., 3 aut.); USTHB, Faculté de Physique, BP 32, El Alia, Bab Ezzouar/Alger/Algérie (2 aut., 4 aut.)
DT :	Publication en série; Niveau analytique
SO :	Applied surface science; ISSN 0169-4332; Pays-Bas; Da. 2011; Vol. 257; No. 24; Pp. 10737-10742; Bibl. 24 ref.
LA :	Anglais
EA :	In this study, we report on the structural characterization of Ni layer and Ni/Ti bilayer contacts on n-type 4H-SiC. The resulting Ni-silicides and the redistribution of carbon, after annealing at 950°C, in the Ni/SiC and the Ni/Ti/SiC contacts are particularly studied by Rutherford Backscattering Spectrometry (RBS) at E_α ₌ 3.2 MeV, nuclear reaction analysis (NRA) at E_d = 1 MeV, scanning electron microscopy (SEM) and Energy Dispersive X-ray Spectrometry (EDS) techniques.
CC :	001B60; 001B70; 001B80
FD :	Nickel; Contact ohmique; Semiconducteur type n; Métal transition; Titane; RBS; Microscopie électronique balayage; Carbure de silicium; Ni; C Si; SiC; Ti; Composé minéral
ED :	Nickel; Ohmic contacts; n type semiconductor; Transition elements; Titanium; RBS; Scanning electron microscopy; Silicon carbide; Inorganic compounds
SD :	Silicio carburo
LO :	INIST-16002.354000509968190700
ID :	12-0115031

Links to Exploration step

Pascal:12-0115031

Le document en format XML

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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Inorganic compounds</term>
<term>Nickel</term>
<term>Ohmic contacts</term>
<term>RBS</term>
<term>Scanning electron microscopy</term>
<term>Silicon carbide</term>
<term>Titanium</term>
<term>Transition elements</term>
<term>n type semiconductor</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Nickel</term>
<term>Contact ohmique</term>
<term>Semiconducteur type n</term>
<term>Métal transition</term>
<term>Titane</term>
<term>RBS</term>
<term>Microscopie électronique balayage</term>
<term>Carbure de silicium</term>
<term>Ni</term>
<term>C Si</term>
<term>SiC</term>
<term>Ti</term>
<term>Composé minéral</term>
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<front><div type="abstract" xml:lang="en">In this study, we report on the structural characterization of Ni layer and Ni/Ti bilayer contacts on n-type 4H-SiC. The resulting Ni-silicides and the redistribution of carbon, after annealing at 950°C, in the Ni/SiC and the Ni/Ti/SiC contacts are particularly studied by Rutherford Backscattering Spectrometry (RBS) at E<sub>α</sub>
 <sub>=</sub>
 3.2 MeV, nuclear reaction analysis (NRA) at E<sub>d</sub>
 = 1 MeV, scanning electron microscopy (SEM) and Energy Dispersive X-ray Spectrometry (EDS) techniques.</div>
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<fA11 i1="01" i2="1"><s1>SIAD (M.)</s1>
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<fA11 i1="02" i2="1"><s1>ABDESSELAM (M.)</s1>
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<fA14 i1="01"><s1>Centre de Recherche Nucléaire d'Alger, 02 Bd Frantz Fanon</s1>
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<sZ>3 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>USTHB, Faculté de Physique, BP 32, El Alia, Bab Ezzouar</s1>
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<s3>DZA</s3>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
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<fA20><s1>10737-10742</s1>
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<fA45><s0>24 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>12-0115031</s0>
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<fA60><s1>P</s1>
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<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>In this study, we report on the structural characterization of Ni layer and Ni/Ti bilayer contacts on n-type 4H-SiC. The resulting Ni-silicides and the redistribution of carbon, after annealing at 950°C, in the Ni/SiC and the Ni/Ti/SiC contacts are particularly studied by Rutherford Backscattering Spectrometry (RBS) at E<sub>α</sub>
 <sub>=</sub>
 3.2 MeV, nuclear reaction analysis (NRA) at E<sub>d</sub>
 = 1 MeV, scanning electron microscopy (SEM) and Energy Dispersive X-ray Spectrometry (EDS) techniques.</s0>
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<fC02 i1="03" i2="3"><s0>001B80</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Nickel</s0>
<s2>NC</s2>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Nickel</s0>
<s2>NC</s2>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Contact ohmique</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Ohmic contacts</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Semiconducteur type n</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>n type semiconductor</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Métal transition</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Transition elements</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Titane</s0>
<s2>NC</s2>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Titanium</s0>
<s2>NC</s2>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>RBS</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>RBS</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Microscopie électronique balayage</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Scanning electron microscopy</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Carbure de silicium</s0>
<s5>15</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Silicon carbide</s0>
<s5>15</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Silicio carburo</s0>
<s5>15</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Ni</s0>
<s4>INC</s4>
<s5>32</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>C Si</s0>
<s4>INC</s4>
<s5>33</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>SiC</s0>
<s4>INC</s4>
<s5>34</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Ti</s0>
<s4>INC</s4>
<s5>35</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Composé minéral</s0>
<s5>62</s5>
</fC03>
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<s5>62</s5>
</fC03>
<fN21><s1>086</s1>
</fN21>
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</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
<server><NO>PASCAL 12-0115031 INIST</NO>
<ET>Structural characterization of Ni and Ni/Ti ohmic contact on n-type 4H-SiC</ET>
<AU>SIAD (M.); ABDESSELAM (M.); SOUAMI (N.); CHAMI (A. C.)</AU>
<AF>Centre de Recherche Nucléaire d'Alger, 02 Bd Frantz Fanon/Alger/Algérie (1 aut., 3 aut.); USTHB, Faculté de Physique, BP 32, El Alia, Bab Ezzouar/Alger/Algérie (2 aut., 4 aut.)</AF>
<DT>Publication en série; Niveau analytique</DT>
<SO>Applied surface science; ISSN 0169-4332; Pays-Bas; Da. 2011; Vol. 257; No. 24; Pp. 10737-10742; Bibl. 24 ref.</SO>
<LA>Anglais</LA>
<EA>In this study, we report on the structural characterization of Ni layer and Ni/Ti bilayer contacts on n-type 4H-SiC. The resulting Ni-silicides and the redistribution of carbon, after annealing at 950°C, in the Ni/SiC and the Ni/Ti/SiC contacts are particularly studied by Rutherford Backscattering Spectrometry (RBS) at E<sub>α</sub>
 <sub>=</sub>
 3.2 MeV, nuclear reaction analysis (NRA) at E<sub>d</sub>
 = 1 MeV, scanning electron microscopy (SEM) and Energy Dispersive X-ray Spectrometry (EDS) techniques.</EA>
<CC>001B60; 001B70; 001B80</CC>
<FD>Nickel; Contact ohmique; Semiconducteur type n; Métal transition; Titane; RBS; Microscopie électronique balayage; Carbure de silicium; Ni; C Si; SiC; Ti; Composé minéral</FD>
<ED>Nickel; Ohmic contacts; n type semiconductor; Transition elements; Titanium; RBS; Scanning electron microscopy; Silicon carbide; Inorganic compounds</ED>
<SD>Silicio carburo</SD>
<LO>INIST-16002.354000509968190700</LO>
<ID>12-0115031</ID>
</server>
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Structural characterization of Ni and Ni/Ti ohmic contact on n-type 4H-SiC

Structural characterization of Ni and Ni/Ti ohmic contact on n-type 4H-SiC

Source :

Descripteurs français

English descriptors

Abstract

Notice en format standard (ISO 2709)

Format Inist (serveur)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri