Influence of inhomogeneous contact in electrical properties of 4H-SiC based Schottky diode
Identifieur interne : 000586 ( Main/Exploration ); précédent : 000585; suivant : 000587Influence of inhomogeneous contact in electrical properties of 4H-SiC based Schottky diode
Auteurs : M. Ben Karoui [Tunisie] ; R. Gharbi [Tunisie] ; N. Alzaied [Arabie saoudite] ; M. Fathallah [Arabie saoudite] ; E. Tresso [Italie] ; L. Scaltrito [Italie] ; S. Ferrero [Italie]Source :
- Solid-state electronics [ 0038-1101 ] ; 2008.
Descripteurs français
- Pascal (Inist)
- Caractéristique électrique, Diode barrière Schottky, Pastille électronique, Champ électrique, Méthode PECVD, Barrière Schottky, Titane, Nickel, Disruption électrique, Idéalité, Packaging électronique, Résistance série, Caractéristique courant tension, Méthode moindre carré moyen, Effet température, Hauteur barrière, Basse tension, Circuit RC, Modèle électrique, Caractéristique dynamique, Semiconducteur type n, Fabrication microélectronique, 8115G, SiC, Ti, Ni.
- Wicri :
English descriptors
- KwdEn :
- Barrier height, Dynamic characteristic, Electric breakdown, Electric field, Electrical characteristic, Electrical model, Electronic packaging, Ideality, Least mean squares methods, Low voltage, Microelectronic fabrication, Nickel, PECVD, RC circuit, Schottky barrier, Schottky barrier diode, Series resistance, Temperature effect, Titanium, Voltage current curve, Wafer, n type semiconductor.
Abstract
Schottky diodes realized on 4H-SiC n-type wafers with an epitaxial layer and a metal-oxide overlap for electric field termination were studied. The oxide was grown by plasma enhanced chemical vapor deposition (PECVD) and the Schottky barriers were formed by thermal evaporation of titanium or nickel. Diodes, with voltage breakdown as high as 700V and ideality factor as low as 1.05, were obtained and characterized after packaging in standard commercial package (TO220). The electrical properties such as ideality factor, hight barrier, the series resistance Rs were deduced by current/voltage (I-V) analysis using the least mean square (LMS) method. The temperature effect on break voltage, Rs and saturation current was studied. A model based on two parallel Schottky diodes with two barrier heights is presented for some devices having an inhomogeneous contact. It is shown that the excess current at low voltage can be explained by a lowering of the Schottky barrier in localized regions. We use the two series RC components electrical model in order to study the dynamic behaviour of the Schottky diode in low frequency and to improve the effect of barrier inhomogeneities in electrical properties.
Affiliations:
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Gharbi</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire des Semiconducteurs et Dispositifs Electroniques, Ecole Supérieure des Sciences et Techniques de Tunis, 05 Av. Taha Hussein</s1><s2>1008 Montfleury, Tunis</s2><s3>TUN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Tunisie</country><placeName><settlement type="city">Tunis</settlement><region nuts="2">Gouvernorat de Tunis</region></placeName></affiliation></author><author><name sortKey="Alzaied, N" sort="Alzaied, N" uniqKey="Alzaied N" first="N." last="Alzaied">N. Alzaied</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>College of Sciences, King Saoud University. P.O. Box 2455</s1><s2>Riyadh 11451</s2><s3>SAU</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Arabie saoudite</country><wicri:noRegion>Riyadh 11451</wicri:noRegion></affiliation></author><author><name sortKey="Fathallah, M" sort="Fathallah, M" uniqKey="Fathallah M" first="M." last="Fathallah">M. 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Ben Karoui</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire des Semiconducteurs et Dispositifs Electroniques, Ecole Supérieure des Sciences et Techniques de Tunis, 05 Av. Taha Hussein</s1><s2>1008 Montfleury, Tunis</s2><s3>TUN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Tunisie</country><placeName><settlement type="city">Tunis</settlement><region nuts="2">Gouvernorat de Tunis</region></placeName></affiliation></author><author><name sortKey="Gharbi, R" sort="Gharbi, R" uniqKey="Gharbi R" first="R." last="Gharbi">R. Gharbi</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire des Semiconducteurs et Dispositifs Electroniques, Ecole Supérieure des Sciences et Techniques de Tunis, 05 Av. Taha Hussein</s1><s2>1008 Montfleury, Tunis</s2><s3>TUN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Tunisie</country><placeName><settlement type="city">Tunis</settlement><region nuts="2">Gouvernorat de Tunis</region></placeName></affiliation></author><author><name sortKey="Alzaied, N" sort="Alzaied, N" uniqKey="Alzaied N" first="N." last="Alzaied">N. Alzaied</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>College of Sciences, King Saoud University. P.O. Box 2455</s1><s2>Riyadh 11451</s2><s3>SAU</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Arabie saoudite</country><wicri:noRegion>Riyadh 11451</wicri:noRegion></affiliation></author><author><name sortKey="Fathallah, M" sort="Fathallah, M" uniqKey="Fathallah M" first="M." last="Fathallah">M. Fathallah</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>College of Sciences, King Saoud University. P.O. Box 2455</s1><s2>Riyadh 11451</s2><s3>SAU</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Arabie saoudite</country><wicri:noRegion>Riyadh 11451</wicri:noRegion></affiliation></author><author><name sortKey="Tresso, E" sort="Tresso, E" uniqKey="Tresso E" first="E." last="Tresso">E. Tresso</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Politecnico di Torino, c.so Ducca Degli Abruzzi</s1><s2>10129 Torino</s2><s3>ITA</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Italie</country><placeName><settlement type="city">Turin</settlement><region type="région" nuts="2">Piémont</region></placeName></affiliation></author><author><name sortKey="Scaltrito, L" sort="Scaltrito, L" uniqKey="Scaltrito L" first="L." last="Scaltrito">L. Scaltrito</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Politecnico di Torino, c.so Ducca Degli Abruzzi</s1><s2>10129 Torino</s2><s3>ITA</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Italie</country><placeName><settlement type="city">Turin</settlement><region type="région" nuts="2">Piémont</region></placeName></affiliation></author><author><name sortKey="Ferrero, S" sort="Ferrero, S" uniqKey="Ferrero S" first="S." last="Ferrero">S. Ferrero</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Politecnico di Torino, c.so Ducca Degli Abruzzi</s1><s2>10129 Torino</s2><s3>ITA</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Italie</country><placeName><settlement type="city">Turin</settlement><region type="région" nuts="2">Piémont</region></placeName></affiliation></author></analytic><series><title level="j" type="main">Solid-state electronics</title><title level="j" type="abbreviated">Solid-state electron.</title><idno type="ISSN">0038-1101</idno><imprint><date when="2008">2008</date></imprint></series></biblStruct></sourceDesc><seriesStmt><title level="j" type="main">Solid-state electronics</title><title level="j" type="abbreviated">Solid-state electron.</title><idno type="ISSN">0038-1101</idno></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Barrier height</term><term>Dynamic characteristic</term><term>Electric breakdown</term><term>Electric field</term><term>Electrical characteristic</term><term>Electrical model</term><term>Electronic packaging</term><term>Ideality</term><term>Least mean squares methods</term><term>Low voltage</term><term>Microelectronic fabrication</term><term>Nickel</term><term>PECVD</term><term>RC circuit</term><term>Schottky barrier</term><term>Schottky barrier diode</term><term>Series resistance</term><term>Temperature effect</term><term>Titanium</term><term>Voltage current curve</term><term>Wafer</term><term>n type semiconductor</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Caractéristique électrique</term><term>Diode barrière Schottky</term><term>Pastille électronique</term><term>Champ électrique</term><term>Méthode PECVD</term><term>Barrière Schottky</term><term>Titane</term><term>Nickel</term><term>Disruption électrique</term><term>Idéalité</term><term>Packaging électronique</term><term>Résistance série</term><term>Caractéristique courant tension</term><term>Méthode moindre carré moyen</term><term>Effet température</term><term>Hauteur barrière</term><term>Basse tension</term><term>Circuit RC</term><term>Modèle électrique</term><term>Caractéristique dynamique</term><term>Semiconducteur type n</term><term>Fabrication microélectronique</term><term>8115G</term><term>SiC</term><term>Ti</term><term>Ni</term></keywords><keywords scheme="Wicri" type="topic" xml:lang="fr"><term>Titane</term><term>Nickel</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Schottky diodes realized on 4H-SiC n-type wafers with an epitaxial layer and a metal-oxide overlap for electric field termination were studied. The oxide was grown by plasma enhanced chemical vapor deposition (PECVD) and the Schottky barriers were formed by thermal evaporation of titanium or nickel. Diodes, with voltage breakdown as high as 700V and ideality factor as low as 1.05, were obtained and characterized after packaging in standard commercial package (TO220). The electrical properties such as ideality factor, hight barrier, the series resistance R<sub>s</sub> were deduced by current/voltage (I-V) analysis using the least mean square (LMS) method. The temperature effect on break voltage, R<sub>s</sub> and saturation current was studied. A model based on two parallel Schottky diodes with two barrier heights is presented for some devices having an inhomogeneous contact. It is shown that the excess current at low voltage can be explained by a lowering of the Schottky barrier in localized regions. We use the two series RC components electrical model in order to study the dynamic behaviour of the Schottky diode in low frequency and to improve the effect of barrier inhomogeneities in electrical properties.</div></front></TEI><affiliations><list><country><li>Arabie saoudite</li><li>Italie</li><li>Tunisie</li></country><region><li>Gouvernorat de Tunis</li><li>Piémont</li></region><settlement><li>Tunis</li><li>Turin</li></settlement></list><tree><country name="Tunisie"><region name="Gouvernorat de Tunis"><name sortKey="Ben Karoui, M" sort="Ben Karoui, M" uniqKey="Ben Karoui M" first="M." last="Ben Karoui">M. Ben Karoui</name></region><name sortKey="Gharbi, R" sort="Gharbi, R" uniqKey="Gharbi R" first="R." last="Gharbi">R. Gharbi</name></country><country name="Arabie saoudite"><noRegion><name sortKey="Alzaied, N" sort="Alzaied, N" uniqKey="Alzaied N" first="N." last="Alzaied">N. Alzaied</name></noRegion><name sortKey="Fathallah, M" sort="Fathallah, M" uniqKey="Fathallah M" first="M." last="Fathallah">M. Fathallah</name></country><country name="Italie"><region name="Piémont"><name sortKey="Tresso, E" sort="Tresso, E" uniqKey="Tresso E" first="E." last="Tresso">E. Tresso</name></region><name sortKey="Ferrero, S" sort="Ferrero, S" uniqKey="Ferrero S" first="S." last="Ferrero">S. Ferrero</name><name sortKey="Scaltrito, L" sort="Scaltrito, L" uniqKey="Scaltrito L" first="L." last="Scaltrito">L. Scaltrito</name></country></tree></affiliations></record>Pour manipuler ce document sous Unix (Dilib)
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