NickelMaghrebV1, Main, Curation, bibRecord, 000D71

High quality crystalline MoS2 thin films obtained on Ni coated substrates: optimization of the post-annealing treatment

Identifieur interne : 000D71 ( Main/Curation ); précédent : 000D70; suivant : 000D72

High quality crystalline MoS2 thin films obtained on Ni coated substrates: optimization of the post-annealing treatment

Auteurs : E. Gourmelon [France] ; H. Hadouda [Algérie] ; Jc Bernede [France] ; J. Pouzet [France]

Source :

Vacuum [ 0042-207X ] ; 1997.

RBID : ISTEX:735EFDEE459DD0FA1A3C8A95FEA600CC67D992CE

Descripteurs français

Pascal (Inist)
- 8110A, Composé binaire, Conductivité électrique, Couche mince, Etude expérimentale, Microstructure, Mo S, MoS2, Molybdène sulfure, Morphologie, Mécanisme croissance, Photoconductivité, Recuit thermique, Réaction état solide, Substrat, Substrat Ni, Texture.

English descriptors

KwdEn :
- Binary compounds, Electric conductivity, Experimental study, Growth mechanism, Microstructure, Molybdenum sulfides, Morphology, Photoconductivity, Solid state reaction, Substrates, Texture, Thermal annealing, Thin films.

Abstract

Textured MoS2 films can be obtained by solid state reaction between the constituents in thin film form when a thin Ni base layer is present. The crystallites have their c-axis perpendicular to the plane of the substrate. The better annealing conditions are T = 1123 K and t = 30 min. The films are nearly stoichiometric, they are p-type. It appears by XPS depth profiling that nickel is present all over the thickness of the MoS2 films. The high conductivity and photoconductivity of the films demonstrate the high crystalline quality of the films obtained. The crystallization process is discussed. It appears that the presence of liquid NiS phase alone cannot explain the improvement of the crystallization of the MoS2 thin films.

Url:

https://api.istex.fr/document/735EFDEE459DD0FA1A3C8A95FEA600CC67D992CE/fulltext/pdf

DOI: 10.1016/S0042-207X(97)00025-0

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Le document en format XML

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<front><div type="abstract" xml:lang="en">Textured MoS<sub>2</sub>
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 films. The high conductivity and photoconductivity of the films demonstrate the high crystalline quality of the films obtained. The crystallization process is discussed. It appears that the presence of liquid NiS phase alone cannot explain the improvement of the crystallization of the MoS<sub>2</sub>
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<author><name sortKey="Pouzet, J" sort="Pouzet, J" uniqKey="Pouzet J" first="J" last="Pouzet">J. Pouzet</name>
<affiliation wicri:level="3"><country xml:lang="fr">France</country>
<wicri:regionArea>G P S E Equipe Couches Minces et Matériaux Nouveaux, Faculté des Sciences et des Techniques, 2 rue de la Houssinière, BP 92008, 44322 Nantes Cèdex 3</wicri:regionArea>
<placeName><region type="region" nuts="2">Pays de la Loire</region>
<settlement type="city">Nantes Cèdex 3</settlement>
</placeName>
</affiliation>
</author>
</analytic>
<monogr></monogr>
<series><title level="j">Vacuum</title>
<title level="j" type="abbrev">VAC</title>
<idno type="ISSN">0042-207X</idno>
<imprint><publisher>ELSEVIER</publisher>
<date type="published" when="1997">1997</date>
<biblScope unit="volume">48</biblScope>
<biblScope unit="issue">6</biblScope>
<biblScope unit="page" from="509">509</biblScope>
<biblScope unit="page" to="514">514</biblScope>
</imprint>
<idno type="ISSN">0042-207X</idno>
</series>
</biblStruct>
</sourceDesc>
<seriesStmt><idno type="ISSN">0042-207X</idno>
</seriesStmt>
</fileDesc>
<profileDesc><textClass></textClass>
<langUsage><language ident="en">en</language>
</langUsage>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Textured MoS2 films can be obtained by solid state reaction between the constituents in thin film form when a thin Ni base layer is present. The crystallites have their c-axis perpendicular to the plane of the substrate. The better annealing conditions are T = 1123 K and t = 30 min. The films are nearly stoichiometric, they are p-type. It appears by XPS depth profiling that nickel is present all over the thickness of the MoS2 films. The high conductivity and photoconductivity of the films demonstrate the high crystalline quality of the films obtained. The crystallization process is discussed. It appears that the presence of liquid NiS phase alone cannot explain the improvement of the crystallization of the MoS2 thin films.</div>
</front>
</TEI>
</ISTEX>
</double>
</record>

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	Serveur d'exploration sur le nickel au Maghreb
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High quality crystalline MoS2 thin films obtained on Ni coated substrates: optimization of the post-annealing treatment

High quality crystalline MoS2 thin films obtained on Ni coated substrates: optimization of the post-annealing treatment

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