Wide band < Wide band gap semiconductors < Wiedemann-Franz law

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List of bibliographic references

Number of relevant bibliographic references: 30.
[0-20] [0 - 20][0 - 30][20-29][20-40]

Ident.	Authors (with country if any)	Title
000214 (2008)		Current flow by metallic shunts in alloyed ohmic contacts to wide-gap semiconductors
000348 (2005)		QD lasers : Physics and applications
000428 (2004-01-19)		Publishers Note: Single-crystalline InN films with an absorption edge between 0.7 and 2 eV grown using different techniques and evidence of the actual band gap energy [Appl. Phys. Lett. 83, 4788 (2003)]
000429 (2004-01-15)		Nitrogen local electronic structure in Ga(In)AsN alloys by soft-x-ray absorption and emission: Implications for optical properties
000496 (2003-12-29)		Photoluminescence, depth profile, and lattice instability of hexagonal InN films
000497 (2003-12-15)		Ultrafast polarization dynamics in biased quantum wells under strong femtosecond optical excitation
000498 (2003-12-08)		Single-crystalline InN films with an absorption edge between 0.7 and 2 eV grown using different techniques and evidence of the actual band gap energy
000505 (2003-11-03)		Inherent nature of localized states in highly planar monolayer InAs/GaAsN pseudo-alloys
000550 (2003-05-01)		The red σ2/kT spectral shift in partially disordered semiconductors
000576 (2003-02)		Fabrication and Properties of Photosensitive Structures Based on ZnIn2S4 Single Crystals
000756 (2002-04-15)		Enhanced tunneling in GaN/InGaN multi-quantum-well heterojunction diodes after short-term injection annealing
000757 (2002-04-15)		Determination of the parameters of semiconducting CdF2:In with Schottky barriers from radio-frequency measurements
000759 (2002-03-25)		Influence of metalorganic chemical vapor deposition growth conditions on In-rich nanoislands formation in InGaN/GaN structures
000776 (2002-01)		Evaluation of Physical Parameters for the Group III Nitrates: BN, AlN, GaN, and InN
000823 (2002)		InN growth by plasma-assisted molecular beam epitaxy
000839 (2002)		Disorder-induced exciton localization in 2D wide-gap semiconductor solid solutions
000B48 (2000)		Quantum dots formed by ultrathin insertions in wide-gap matrices
000C16 (1999-12-13)		Recombination balance in green-light-emitting GaN/InGaN/AlGaN quantum wells
000C26 (1999-11-22)		Experimental and theoretical studies of phonons in hexagonal InN
000C46 (1999-09-15)		The rate of radiative recombination in the nitride semiconductors and alloys
000C57 (1999-09)		Growth of A3N whiskers and plate-shaped crystals by molecular-beam epitaxy with the participation of the liquid phase

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