Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Keywords » - entrée « Vacancy »
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Vacancies < Vacancy < Vacancy density  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 19.
Ident.Authors (with country if any)Title
001624 (1992) Self-compensation of electrically active impurities by intrinsic defects in Pb0.8Sn0.2Te solid solutions
001640 (1992) Optoelectronic properties of indium-doped zinc selenide
001771 (1991) Negative differential resistance of semiconductors with stoichiometric vacancies
001798 (1991) Influence of stoichiometric vacancies on the behavior of the top of the valence band of (In2Te3)x-(HgTe)1-x solid solutions
001802 (1991) Influence of isovalent doping with In and Sb on the photoluminescence of complexes formed in epitaxial heavily doped p-type GaAs:Ge
001842 (1991) Characteristics of compensation of the doping effect of donor impurities by vacancies in Pb0.93Sn0.07Se
001844 (1991) Changes in the defect structure of CdxHg1-x Te as a result of doping with indium
001872 (1990) The electrophysical properties of CdMIn2O5, CdM'InO4, and CdBaInO8 and solid solutions based on them
001937 (1990) Charge states of tin impurity atoms and their influence on the electical conductivity of In2S3
001958 (1989) On the mechanism of semi-insulating property formation in In-doped GaAs
001973 (1989) Fundamental optical absorption edge in MnIn2Te4 single crystals
001A45 (1989)
001A87 (1988)
001B75 (1988)
001B91 (1987) Local density of states of GaAs and InAs surfaces: ideal(111), (001) and (110) surfaces and monoatomic steps on the (111) and the (001) surface
001C68 (1987)
001C69 (1987)
001D22 (1986) Effect of In and Sb vacancies on temperature dependence of InSb lattice parameter at high temperatures
001D95 (1985)

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