Transmission < Transmission electron microscopy < Transmission mode

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 50.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000002 (2013)		Uniform InSb quantum dots buried in narrow-gap InAs(Sb,P) matrix
000011 (2013)		TEM-study of free-standing self-assembled InSb quantum dots grown on InAs surface
000021 (2013)		Metamorphic InAlAs/InGaAs/InAlAs/GaAs HEMT heterostructures containing strained superlattices and inverse steps in the metamorphic buffer
000074 (2011)		MOVPE of device-oriented wide-band-gap III-N heterostructures
000091 (2010)		Type II heterostructures with InSb quantum dots inserted into p-n InAs(Sb,P) junction
000096 (2010)		Resonant enhancement of the transversal Kerr effect in the InMnAs layers
000104 (2010)		On strain state and pseudo-moiré TEM contrast of Insb quantum dots coherently grown on InAs surface
000106 (2010)		Nanocrystalline Sn02 and In2O3 as materials for gas sensors: The relationship between microstructure and oxygen chemisorption
000123 (2010)		Composition and morphology of fluorinated anodic oxides on InAs (1 1 1)A surface
000135 (2009)		Structural features, nonstoichiometry and high-temperature transport in SrFe1-xMoxO3-δ
000151 (2009)		InSb quantum dots and quantum rings in a narrow-gap InAsSbP matrix
000247 (2007)		ITO deposited by pyrosol for photovoltaic applications
000252 (2007)		From extended defects and interfaces to point defects in three dimensions-The case of InxGa1-xN
000257 (2007)		Electrochemical properties of carbon nanotubes-hydrogenase conjugates Langmuir-Blodgett films
000275 (2007)		Analysis of the local indium composition in ultrathin InGaN layers
000300 (2006)		Photovoltaic properties and technological aspects of In1-xGaxN/Si, Ge (0
000349 (2005)		Properties of InGaAsN heterostructures emitting at 1.3-1.55 μm
000362 (2005)		Molecular beam epitaxy of type II InSb/InAs nanostructures with InSb sub-monolayers
000417 (2004-03)		Structural and Optical Properties of Heterostructures with InAs Quantum Dots in an InGaAsN Quantum Well Grown by Molecular-Beam Epitaxy
000485 (2004)		Effect of growth kinetics on the structural and optical properties of quantum dot ensembles
000499 (2003-12)		Room-Temperature 1.5-1.6 μm Photoluminescence from InGaAs/GaAs Heterostructures Grown at Low Substrate Temperature

---

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Russie/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/KwdEn.i -k "Transmission electron microscopy" 

HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/KwdEn.i  \
                -Sk "Transmission electron microscopy" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Russie/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Russie
   |étape=   Analysis
   |type=    indexItem
   |index=    KwdEn.i
   |clé=    Transmission electron microscopy
}}

---

This area was generated with Dilib version V0.5.77. Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024