Threshold < Threshold current < Threshold current density

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 36.
[0-20] [0 - 20][0 - 36][20-35][20-40]

Ident.	Authors (with country if any)	Title
000010 (2013)		The influence of p-doping on two-state lasing in InAs/InGaAs quantum dot lasers
000120 (2010)		Edge-emitting InGaAs/GaAs laser with high temperature stability of wavelength and threshold current
000189 (2008)		Quantum dot photonics : edge emitter, amplifier and VCSEL
000195 (2008)		Novel materials GaInAsPSb/GaSb and GaInAsPSb/InAs for room-temperature optoelectronic devices for a 3-5 μm wavelength range (GaInAsPSb/GaSb and GaInAsPSb/InAs for 3-5 μm)
000219 (2008)		A 1.33 μm InAs/GaAs quantum dot laser with a 46 cm-1 modal gain
000223 (2007)		The impact of thermal effects on the performance of vertical-cavity surface-emitting lasers based on sub-monolayer InGaAs quantum dots
000272 (2007)		Beam profile characteristics of InGaAs sub-monolayer quantum-dot photonic-crystal VCSELs
000312 (2006)		Longitudinal photonic bandgap crystal laser diodes with ultra-narrow vertical beam divergence
000334 (2005)		Ultrahigh gain and non-radiative recombination channels in 1.5 μm range metamorphic InAs-InGaAs quantum dot lasers on GaAs substrates
000367 (2005)		Long-wavelength lasers based on metamorphic quantum dots
000374 (2005)		High power temperature-insensitive 1.3 μm InAs/InGaAs/GaAs quantum dot lasers
000377 (2005)		Epitaxial growth of quantum-dot heterostructures on metamorphic buffers
000611 (2003)		Recent advances in long wavelength GaAs-based quantum dot lasers
000628 (2003)		Non-linear power-current characteristics of quantum well lasers at high injection
000636 (2003)		MBE growth of low-threshold long-wavelength QD lasers on GaAs substrates
000647 (2003)		Influence of intraband relaxation processes on threshold and power-current characteristics of quantum well lasers
000652 (2003)		InAsSb/InAsSbP current-tunable laser with narrow spectral line width
000654 (2003)		InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with enhanced optical gain
000807 (2002)		New diode lasers with leaking emission in an optical cavity
000838 (2002)		Edge-emitting InGaAs/GaAs lasers with deeply etched semiconductor/air distributed Bragg reflector mirrors
000856 (2002)		1.3 Micron edge- and surface-emitting quantum dot lasers grown on GaAs substrates

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