Serveur d'exploration sur l'Indium - Analysis (Russie)

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Thermal analysis < Thermal annealing < Thermal characteristic  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 31.
[0-20] [0 - 20][0 - 31][20-30][20-40]
Ident.Authors (with country if any)Title
000042 (2012) Indolinone-substituted methanofullerene-A new acceptor for organic solar cells
000271 (2007) Cathodoluminescence emission study of nanocrystalline indium oxide films deposited by spray pyrolysis
000484 (2004) Effect of thermal annealing and strain engineering on the fine structure of quantum dot excitons
000A02 (2001) Effect of low-temperature diffusion annealing on the properties of PbSnTe(In) epilayers
000B51 (2000) Preparation of In2Se3 layers on InAs by heterovalent substitution
000D43 (1999) Vapour growth and doping of ZnSe single crystals
000D44 (1999) Ultrahigh vacuum scanning tunnelling microscopy studies of the decapped InAs quantum dots on GaAs(001) surface after desorption of a protective As layer
000D68 (1999) Ordered arrays of arsenic clusters coincided with InAs/GaAs superlattices grown by low-temperature MBE
000F11 (1998) Vapour phase and liquid phase doping of ZnSe by group III elements
000F19 (1998) Study of In2S3 thin films by diffraction of synchrotron radiation
001069 (1997) Two-dimensional precipitation of As clusters due to indium delta-doping of GaAs films grown by molecular beam epitaxy at low temperature
001086 (1997) Stoichiometry and properties of undoped indium oxide films prepared by reactive evaporation
001513 (1993) Superconductivity and the distribution of the components in thin indium-doped PbzS1-zTe films
001570 (1993) Extrinsic recombination processes in proton irradiated InAs/GaAs heterostructures grown by molecular beam epitaxy
001597 (1992) Transmutation doping and Fermi-level stabilization in neutron-irradiated InP
001623 (1992) Self-diffusion coefficients of sulfur in In2S3, CdIn2S4, and Agln5S8 single crystals
001626 (1992) Redistribution of magnesium in InAs during postimplantation annealing
001640 (1992) Optoelectronic properties of indium-doped zinc selenide
001668 (1992) Injection-contact phenomena in a heterostructure made of disordered zinc selenide
001689 (1992) Electronic state of the surface of InP modified by treatment in sulfur vapor
001691 (1992) Electron state of a surface of InP modified by treatment in sulfur vapor

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