Temperature control < Temperature dependence < Temperature distribution

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 110.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000000 (2014)		Thermoelectrical properties of spray pyrolyzed indium oxide thin films doped by tin
000026 (2013)		Ce2PdIng, Ce3PdIn11 and Ce5Pd2In19-members of homological series based on AuCu3- and PtHg2-type structural units
000041 (2012)		Influence of Sn on the thermoelectric properties of (BixSb1-x)2Te3 single crystals
000106 (2010)		Nanocrystalline Sn02 and In2O3 as materials for gas sensors: The relationship between microstructure and oxygen chemisorption
000132 (2009)		Thermoelectric Properties of InSb Nanowires Over a Wide Temperature Range
000135 (2009)		Structural features, nonstoichiometry and high-temperature transport in SrFe1-xMoxO3-δ
000155 (2009)		High-temperature transport and stability of SrFe1-xNbXO3-δ
000157 (2009)		High-power laser diodes based on triple integrated InGaAs/AlGaAs/GaAs structures emitting at 0.9 μm
000205 (2008)		Influence of PbZrO3 doping on the structural and magnetic properties of BiFeO3
000209 (2008)		Energy characteristics of excitons in InGaN/GaN heterostructures
000223 (2007)		The impact of thermal effects on the performance of vertical-cavity surface-emitting lasers based on sub-monolayer InGaAs quantum dots
000226 (2007)		Surface segregation of Sb atoms during molecular-beam epitaxy of InSb quantum dots in an InAs(Sb) matrix
000245 (2007)		Inas and InAs(Sb)(P) (3-5 μm) immersion lens photodiodes for portable optic sensors
000247 (2007)		ITO deposited by pyrosol for photovoltaic applications
000341 (2005)		Spectral perturbations in a semiconductor laser: I. Anomalous splitting in the mode-beating spectrum
000371 (2005)		Hole-hole interaction in a strained InxGa1-xAs two-dimensional system
000451 (2004)		Room-temperature photoluminescence of Ga0.96In0.04 As0.11Sb0.89 lattice matched to InAs
000454 (2004)		Plasma-assisted MBE growth and characterization of InN on sapphire
000468 (2004)		Large single crystals of gallium selenide: growing, doping by In and characterization
000474 (2004)		High nitrogen content InGaAsN/GaAs single quantum well for 1.55 μm applications grown by molecular beam epitaxy
000481 (2004)		Electro-optical properties of UV-emitting InGaN heterostructures considering injection-induced conductivity

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