Serveur d'exploration sur l'Indium - Analysis (Russie)

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TEA lasers < TEM < TEM mode  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 32.
[0-20] [0 - 20][0 - 32][20-31][20-40]
Ident.Authors (with country if any)Title
000890 (2001-08) Anisotropy of the Spatial Distribution of In(Ga)As Quantum Dots in In(Ga)As-GaAs Multilayer Heterostructures Studied by X-ray and Synchrotron Diffraction and Transmission Electron Microscopy
000919 (2001-03) Composition Analysis of Coherent Nanoinsertions of Solid Solutions on the Basis of High-Resolution Electron Micrographs
000939 (2001) Step bunching in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs(001) vicinal surfaces
000945 (2001) Reversibility of the island shape, volume and density in Stranski-Krastanow growth
000964 (2001) Optical and structural properties of self-organized InGaAsN/GaAs nanostructures
000983 (2001) Incorporation of InAs nanostructures in a silicon matrix : growth, structure and optical properties
000A21 (2000-12-15) Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors
000A26 (2000-12-01) Volmer-Weber and Stranski-Krastanov InAs-(Al,Ga)As quantum dots emitting at 1.3 μm
000A59 (2000-07) Study of Multilayer Structures with InAs Nanoobjects in a Silicon Matrix
000A74 (2000-06) Specifics of MOCVD Formation of InxGa1 - xN Inclusions in a GaN Matrix
000A82 (2000-05-08) Structure and optical properties of Si/InAs/Si layers grown by molecular beam epitaxy on Si substrate
000B12 (2000-03) Mechanisms of InGaAlAs Solid Solution Decomposition Stimulated by InAs Quantum Dots
000B17 (2000-02) Thermal Annealing of Defects in InGaAs/GaAs Heterostructures with Three-Dimensional Islands
000B84 (2000) Hexagonal InN/sapphire heterostructures: interplay of interface and layer properties
000C93 (1999-05) Spontaneously forming periodic composition-modulated InGaAsP structures
000D12 (1999-03-15) Enhanced precipitation of excess As on antimony delta layers in low-temperature-grown GaAs
000D33 (1999-02) Capacitance spectroscopy of deep states in InAs/GaAs quantum dot heterostructures
000D68 (1999) Ordered arrays of arsenic clusters coincided with InAs/GaAs superlattices grown by low-temperature MBE
000D80 (1999) Lasing in structures with InAs quantum dots in an (Al, Ga)As matrix grown by submonolayer deposition : Special issue papers on quantum dots
000E18 (1999) 1.75 μm emission from self-organized InAs quantum dots on GaAs
000E58 (1998-07) Indium layers in low-temperature gallium arsenide: structure and how it changes under annealing in the temperature range 500-700 °C

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