Surface segregation < Surface states < Surface stresses

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 22.
[0-20] [0 - 20][0 - 22][20-21][20-40]

Ident.	Authors (with country if any)	Title
000123 (2010)		Composition and morphology of fluorinated anodic oxides on InAs (1 1 1)A surface
000224 (2007)		The effect of InGaN/GaN MQW hydrogen treatment and threading dislocation optimization on GaN LED efficiency
000296 (2006)		Quantum confinement in nanocorrugated semiconductor films
000430 (2004-01-15)		Bulklike behavior of the optical anisotropy of cation-rich (001) surfaces of Ga1-xInxAs alloys
000541 (2003-06-15)		Surface and bulk origin of the optical anisotropy of As-rich GaAs(001) and Ga1-xInxAs(001)
000568 (2003-02-25)		Many-Particle Interaction in Tunneling Spectroscopy of Impurity States on the InAs(110) Surface
000881 (2001-09)		Electronic Properties of InAs-Based Metal-Insulator-Semiconductor (MIS) Structures
000A93 (2000-04-01)		Composition and Surface Structure of Quantum Chains on a In/Si(111) Surface
000B55 (2000)		Photoemission measurements of quantum states in accumulation layers at narrow band gap III-V semiconductor surfaces
000C23 (1999-12)		Position of the Fermi level on an indium arsenide surface treated in sulfur vapor
000C47 (1999-09-15)		Direct measurement of quantum-state dispersion in an accumulation layer at a semiconductor surface
000C99 (1999-05)		Chemical effects during formation of the electronic surface structure of III-V semiconductors in a sulfide solution.
000D03 (1999-04)		Surface of n-type InP (100) passivated in sulfide solutions
000E69 (1998-06)		Atomic hydrogen interaction with the Si(100)4×3-In surface studied by scanning tunneling microscopy
000F02 (1998-01-25)		Scanning tunneling spectroscopy of charge effects on semiconductor surfaces and atomic clusters
001061 (1997-01)		Photoluminescence of InSb quantum dots in GaAs and GaSb matrices
001064 (1997-01)		Depth distribution of deep-level centers in silicon dioxide near an interface with indium phosphide
001318 (1995-05)		Sulfide passivation of III-V semiconductors: The starting electronic structure of a semiconductor as a factor in the interaction between its valence electrons and the sulfur ion
001432 (1994-06)		Tunneling-recombination currents in nonideal InGaAsP/InP heterostructures
001547 (1993)		Mechanism of formation of a sulfide passivating coating on the surfaces of III-V semiconductors
001578 (1993)		Effect of recombination in the space charge region of the illuminance characteristics of the surface photo-emf of GaAs and InP

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