Keywords
Analysis
Russie
Racine
Analysis
Russie
Repository
Accueil
Racine
Racine

Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Keywords » - entrée « Strains »
Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
Strained superlattice < Strains < Strange attractor  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 16.
Ident.Authors (with country if any)Title
000030 (2012) Submicron Raman and photoluminescence topography of InAs/Al(Ga)As quantum dots structures
000091 (2010) Type II heterostructures with InSb quantum dots inserted into p-n InAs(Sb,P) junction
000208 (2008) Frequency tuning of diode laser radiation by surface acoustic wave
000219 (2008) A 1.33 μm InAs/GaAs quantum dot laser with a 46 cm-1 modal gain
000331 (2006) 1.3-1.5 μm quantum dot lasers on foreign substrates : Growth using defect reduction technique, high-power CW operation, and degradation resistance
000458 (2004) Optical phonons in InAs and AlAs quantum dot structures
000810 (2002) Molecular beam epitaxy of low-strained CdSe/CdMgSe heterostructures on InAs(001) substrates
000D81 (1999) Isoperiodical heterostructures GaInAsSb/GaSb grown by LPE from Sb-rich melts in spinodal decomposition area
001161 (1996-08) Optical emission range of structures with strained InAs quantum dots in GaAs
001282 (1995-10-23) InGaAsP/GaAs elastically strained quaternary solid solutions with high critical thicknesses grown by liquid phase epitaxy
001301 (1995-07-03) Ordering phenomena in InAs strained layer morphological transformation on GaAs (100) surface
001332 (1995-02) Strained thin-layer InAs1-x-ySbxBiy/InSb heterostructures: calculation of certain physical properties
001410 (1994-10-15) Optical spectroscopic studies of InAs layer transformation on GaAs surfaces
001425 (1994-08) Effect of deposition conditions on the formation of (In,Ga)As quantum clusters in a GaAs matrix
001428 (1994-07-01) Time-resolved investigations of excitonic recombination in highly strained InAs/Al0.48In0.52As quantum wells
001444 (1994-04) Growth of (In,Ga)As/GaAs quantum-well heterostructures through the deposition of ''submonolayer'' strained InAs layers

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Russie/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/KwdEn.i -k "Strains" 

HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/KwdEn.i  \
                -Sk "Strains" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Russie/Analysis/biblio.hfd

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Russie
   |étape=   Analysis
   |type=    indexItem
   |index=    KwdEn.i
   |clé=    Strains
}}
Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024