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Serveur d'exploration sur l'Indium - Analysis (Russie)

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Sticking coefficient < Stimulated emission < Stochastic process  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 13.
Ident.Authors (with country if any)Title
000136 (2009) Stimulated-emission wavelength switching in optically pumped InGaAs/AIGaInAs laser heterostructures
000575 (2003-02) Internal Quantum Efficiency of Stimulated Emission of (λ = 1.55 μm) InGaAsP/InP Laser Diodes
000710 (2002-11) High Power Single-Mode (λ = 1.3-1.6 μm) Laser Diodes Based on Quantum Well InGaAsP/InP Heterostructures
000736 (2002-07) Lasing in the Far IR Spectral Range under Femtosecond Optical Excitation of the InAs Semiconductor in a Magnetic Field
000879 (2001-09) InAs/InAsSbP Light-Emitting Structures Grown by Gas-Phase Epitaxy
000962 (2001) Optical phenomena connected with intraband carrier transitions in quantum dots and quantum wells
000E23 (1998-12) Continuous stimulated emission at T=293 K from separate-confinement heterostructure diode lasers with one layer of InAs quantum dots grown on vicinal GaAs(001) surfaces misoriented in the [010] direction in the active region
001323 (1995-04) Superluminescence polarization and optical-loss anisotropy in an InGaP/GaAs/InGaP waveguide structure
001437 (1994-05-09) 2.7-3.9 μm InAsSb(P)/InAsSbP low threshold diode lasers
001457 (1994-02) Controlling the mode composition of high-power buried InGaAsP/GaAs lasers with a wavelength of 0.8 μm
001612 (1992) Stimulated emission from indium selenide and gallium selenide layer semiconductors
001D00 (1986) Photoluminescence and laser emission in In0.53Ga0.47As/InP layers
001E03 (1985)

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