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Semiconductor semimetal transition < Semiconductor superlattices < Semiconductor technology  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 19.
Ident.Authors (with country if any)Title
000407 (2004-05) Formation of a System of InGaAs Quantum Wires in a Gallium Arsenide Matrix
000497 (2003-12-15) Ultrafast polarization dynamics in biased quantum wells under strong femtosecond optical excitation
000505 (2003-11-03) Inherent nature of localized states in highly planar monolayer InAs/GaAsN pseudo-alloys
000534 (2003-07-11) Doping of Magic Nanoclusters in the Submonolayer In/Si(100) System
000542 (2003-06-15) Kinetics of highly spin-polarized electron photoemission from an InGaAlAs strained layer by energy and spin-resolved measurements
000573 (2003-02) Population Inversion between Γ Subbands in Quantum Wells under the Conditions of Γ-L Intervalley Transfer
000589 (2003-01) Lateral Electronic Transport in Short-Period InAs/GaAs Superlattices at the Threshold of Quantum Dot Formation
000749 (2002-05) Growth of GaInNAs quaternaries using a digital alloy technique
000756 (2002-04-15) Enhanced tunneling in GaN/InGaN multi-quantum-well heterojunction diodes after short-term injection annealing
000857 (2001-12-31) Near-Field Magnetophotoluminescence Spectroscopy of Composition Fluctuations in InGaAsN
000919 (2001-03) Composition Analysis of Coherent Nanoinsertions of Solid Solutions on the Basis of High-Resolution Electron Micrographs
000C90 (1999-05-25) Above-barrier excitons: first magnetooptic investigation
000D30 (1999-02) High resolution x-ray diffractometry of the structural characteristics of a semiconducting (InGa)As/GaAs superlattice
000D34 (1999-01-11) Intrinsic optical confinement and lasing in InAs-AlGaAs submonolayer superlattices
000E15 (1999) 3.9 W CW power from sub-monolayer quantum dot diode laser
000E25 (1998-11-23) Millimeter wave generation by a self-sustained current oscillation in an InGaAs/InAlAs superlattice
000E36 (1998-10) Arsenic cluster superlattice in gallium arsenide grown by low-temperature molecular-beam epitaxy
000E99 (1998-02) Interband absorption of long-wavelength radiation in δ-doped superlattices based on single-crystal wide-gap semiconductors
000F06 (1998-01) High-resolution x-ray diffraction study of InAs-GaAs superlattices grown by molecular-beam epitaxy at low temperature

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