Semiconductor junctions < Semiconductor laser < Semiconductor laser arrays

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List of bibliographic references

Number of relevant bibliographic references: 24.
[0-20] [0 - 20][0 - 24][20-23][20-40]

Ident.	Authors (with country if any)	Title
001339 (1995)		Wavelength and polarisation switching in InGaAsP/InP DFB lasers
001485 (1994)		Generation of 110 GHz train of subpicosecond pulses in 1.535 μm spectral region by passively modelocked InGaAsP/InP laser diodes
001553 (1993)		Long-wavelength low-threshold lasers based on III-V compounds
001566 (1993)		High-power buried InGaAsP/GaAs (λ=0.8 μm) laser diodes
001647 (1992)		Nature of the long-wavelength shift of the spectrum of coherent radiation emitted from GalnAsSb heterolasers
001676 (1992)		High-power buried heterostructure InGaAsP/InP laser diodes produced by an improved regrowth process
001791 (1991)		Intermode interactions in a heterolaser working at the second-order difference frequency
001805 (1991)		Improvement in the burial process and fabrication of single-mode buried InGaAsP/InP (λ = 1.3 μm) lasers with an output power of 160 mW
001807 (1991)		High-power 0.8 μm InGaAsP-GaAs SCH SQW lasers
001816 (1991)		Experimental and theoretical investigations of singularities of the thresholdand power characteristics of InGaAsP/InP separate-confinement double-heterostructure lasers (λ = 1.3 μm)
001971 (1989)		High-power (1W, CW) single-lobe operation of LPE-grown GaInAsP/GaInP (λ=O•8μm) separate-confinement single-quantum-well broad-area lasers
001A50 (1988)		Waveguiding and temperature characteristics of threshold current and amplitude-phase coupling coefficient in double-heterostructure lasers
001B31 (1988)
001B38 (1988)
001B55 (1988)
001B73 (1988)
001C51 (1987)
001C80 (1987)
001D51 (1986)
001E36 (1984)		Low-threshold current density InGaAsP/InP injection lasers with three-layer-waveguide double heterostructure (jth≃0.5 kA/cm2 AT 300 K)
001E77 (1984)

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