Semiconductor growth < Semiconductor heterojunctions < Semiconductor junctions

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List of bibliographic references

Number of relevant bibliographic references: 123.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000408 (2004-05)		Determining Parameters of a Multilayer Heterostructure by Joint Analysis of the X-ray Rocking Curves Measured for Various Crystallographic Planes
000410 (2004-04)		Tuning the Energy Spectrum of InAs/GaAs Quantum Dots by Varying the Thickness and Composition of the Thin Double GaAs/InGaAs Cladding Layer
000426 (2004-02)		Nonlinear Generation of Far Infrared Mode in Double-Frequency Heterojunction Lasers
000499 (2003-12)		Room-Temperature 1.5-1.6 μm Photoluminescence from InGaAs/GaAs Heterostructures Grown at Low Substrate Temperature
000509 (2003-11)		Molecular-Beam Epitaxy and Properties of Heterostructures with InAs Nanoclusters in an Si Matrix
000510 (2003-11)		1.7-1.8 μm Diode Lasers Based on Quantum-Well InGaAsP/InP Heterostructures
000514 (2003-10)		Temperature Characteristics of Low-Threshold High-Efficiency Quantum-Dot Lasers with the Emission Wavelength from 1.25 to 1.29 μm
000517 (2003-10)		Electron Transport in Unipolar Heterostructure Transistors with Quantum Dots in Strong Electric Fields
000518 (2003-10)		Electroluminescence in a Semimetal Channel at a Single Type II Broken-Gap Heterointerface
000521 (2003-09)		Metamorphic Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures with High Electron Mobility Grown on GaAs Substrates
000523 (2003-09)		Electrical Properties and Luminescence Spectra of Light-Emitting Diodes Based on InGaN/GaN Heterostructures with Modulation-Doped Quantum Wells
000525 (2003-08)		Special Features of Spontaneous and Coherent Emission of IR Lasers Based on a Single Type-II Broken-Gap Heterojunction
000529 (2003-08)		Interaction of Charge Carriers with the Localized Magnetic Moments of Manganese Atoms in p-GaInAsSb/p-InAs:Mn Heterostructures
000530 (2003-08)		High-Efficiency GaInAsSb/GaAlAsSb Photodiodes for 0.9- to 2.55-μm Spectral Range with a Large-Diameter Active Area
000532 (2003-08)		Characterization of Light-Emitting Diodes Based on InAsSbP/InAsSb Structures Grown by Metal-Organic Vapor-Phase Epitaxy
000533 (2003-07-25)		Heterolaser Frequency Tuning under the Action of Ultrasonic Waves
000544 (2003-06)		Nonohmic Conductivity under Transition From Weak to Strong Localization in GaAs/InGaAs Structures with a Two-Dimensional Electron Gas
000545 (2003-06)		Mid-Infrared (λ = 2.775 μm) Injection Laser Based on AlGaAsSb/InAs/CdMgSe Hybrid Double Heterostructure Grown by Molecular-Beam Epitaxy
000547 (2003-05-26)		A 2.78-μm laser diode based on hybrid AlGaAsSb/InAs/CdMgSe double heterostructure grown by molecular-beam epitaxy
000552 (2003-05)		Photosensitive Structures Based on CdGa2Se4 Single Crystals
000559 (2003-04)		High-Power 1.7-1.8 μm Single-Mode Laser Diodes

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