Semiconductor epitaxial layers < Semiconductor growth < Semiconductor heterojunctions

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 53.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000397 (2004-06-07)		Asymmetric AlAsSb/InAs/CdMgSe quantum wells grown by molecular-beam epitaxy
000428 (2004-01-19)		Publishers Note: Single-crystalline InN films with an absorption edge between 0.7 and 2 eV grown using different techniques and evidence of the actual band gap energy [Appl. Phys. Lett. 83, 4788 (2003)]
000496 (2003-12-29)		Photoluminescence, depth profile, and lattice instability of hexagonal InN films
000498 (2003-12-08)		Single-crystalline InN films with an absorption edge between 0.7 and 2 eV grown using different techniques and evidence of the actual band gap energy
000547 (2003-05-26)		A 2.78-μm laser diode based on hybrid AlGaAsSb/InAs/CdMgSe double heterostructure grown by molecular-beam epitaxy
000743 (2002-05-20)		Molecular-beam epitaxy of (Cd,Mn)Se on InAs, a promising material system for spintronics
000749 (2002-05)		Growth of GaInNAs quaternaries using a digital alloy technique
000759 (2002-03-25)		Influence of metalorganic chemical vapor deposition growth conditions on In-rich nanoislands formation in InGaN/GaN structures
000767 (2002-02-15)		Modeling cross-hatch surface morphology in growing mismatched layers
000777 (2002-01)		A New Class of Holographic Materials Based on Semiconductor CdF2 Crystals with Bistable Centers. Part II. Growth of Optically Perfect Crystals
000781 (2002)		Type II GaSb based photodiodes operating in spectral range 1.5-4.8 μm at room temperature
000782 (2002)		Towards longwave (5-6 μm) LED operation at 80°C: Injection or extraction of carriers?
000791 (2002)		Single mode laser based on InAsSb/InAsSbP double heterostructure with tuning from 3.224 to 3.234 μm
000829 (2002)		High-power mid-infrared light emitting diodes grown by MOVPE
000910 (2001-03-19)		Room-temperature midinfrared electroluminescence from asymmetric AlSbAs/InAs/CdMgSe heterostructures grown by molecular beam epitaxy
000C15 (1999-12-15)		Optical anisotropy in vertically coupled quantum dots
000C56 (1999-09)		Heteroepitaxial growth of InAs on Si: a new type of quantum dot
000C57 (1999-09)		Growth of A3N whiskers and plate-shaped crystals by molecular-beam epitaxy with the participation of the liquid phase
000C59 (1999-09)		GaInAsSb/GaSb heterostructures grown in the spinodal decay region by liquid-phase epitaxy from Sb-enriched solution-melts
000C62 (1999-08)		Structure and properties of InGaAs layers grown by low-temperature molecular-beam epitaxy
000C68 (1999-08)		Gadolinium-doped InGaAsSb solid solutions on an InAs substrate for light-emitting diodes operating in the spectral interval λ=3-5μm

---

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Russie/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/KwdEn.i -k "Semiconductor growth" 

HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/KwdEn.i  \
                -Sk "Semiconductor growth" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Russie/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Russie
   |étape=   Analysis
   |type=    indexItem
   |index=    KwdEn.i
   |clé=    Semiconductor growth
}}

---

This area was generated with Dilib version V0.5.77. Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024