Semiconductor electrolyte interface < Semiconductor epitaxial layers < Semiconductor growth

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 43.
[0-20] [0 - 20][0 - 43][20-40]

Ident.	Authors (with country if any)	Title
000397 (2004-06-07)		Asymmetric AlAsSb/InAs/CdMgSe quantum wells grown by molecular-beam epitaxy
000496 (2003-12-29)		Photoluminescence, depth profile, and lattice instability of hexagonal InN films
000498 (2003-12-08)		Single-crystalline InN films with an absorption edge between 0.7 and 2 eV grown using different techniques and evidence of the actual band gap energy
000743 (2002-05-20)		Molecular-beam epitaxy of (Cd,Mn)Se on InAs, a promising material system for spintronics
000767 (2002-02-15)		Modeling cross-hatch surface morphology in growing mismatched layers
000877 (2001-09-15)		Low temperature photoluminescence of Ga0.84In0.16As0.22Sb0.78 solid solutions lattice matched to InAs
000955 (2001)		Photoluminescence emission (1.3-1.4 μm) from quantum dots heterostructures based on GaAs
000A82 (2000-05-08)		Structure and optical properties of Si/InAs/Si layers grown by molecular beam epitaxy on Si substrate
000A91 (2000-05)		A Computerized Complex for Recording and Processing of Reflected High-Energy Electron Diffraction Patterns
000B07 (2000-03)		Treatment of Inhomogeneous Radiation Broadening in Quantum Dot Heterostructures Described within the Framework of the Superradiation Model
000C20 (1999-12-01)		Electroluminescence and photoelectric properties of type II broken-gap n-In(Ga)As(Sb)/N-GaSb heterostructures
000C29 (1999-11-08)		Properties of two-dimensional electron gas containing self-organized quantum antidots
000C30 (1999-11)		X-Ray diffraction analysis of multilayer InAs-GaAs heterostructures with InAs quantum dots
000C50 (1999-09)		Spontaneously assembling periodic composition-modulated InGaAsP structures
000C52 (1999-09)		Photoluminescence of InAs quantum dots grown on disoriented GaAs substrates
000C59 (1999-09)		GaInAsSb/GaSb heterostructures grown in the spinodal decay region by liquid-phase epitaxy from Sb-enriched solution-melts
000C62 (1999-08)		Structure and properties of InGaAs layers grown by low-temperature molecular-beam epitaxy
000C68 (1999-08)		Gadolinium-doped InGaAsSb solid solutions on an InAs substrate for light-emitting diodes operating in the spectral interval λ=3-5μm
000C69 (1999-08)		Formation of two-dimensional islands in the deposition of ultrathin InSb layers on a GaSb surface
000C74 (1999-07)		Self-organized nanoscale InP islands in an InGaP/GaAs host and InAs islands in an InGaAs/InP host
000C81 (1999-07)		Electrical properties of epitaxial indium arsenide and narrow band solid solutions based on it

---

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Russie/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/KwdEn.i -k "Semiconductor epitaxial layers" 

HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/KwdEn.i  \
                -Sk "Semiconductor epitaxial layers" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Russie/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Russie
   |étape=   Analysis
   |type=    indexItem
   |index=    KwdEn.i
   |clé=    Semiconductor epitaxial layers
}}

---

This area was generated with Dilib version V0.5.77. Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024