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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Keywords » - entrée « Semiconductor doping »
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Semiconductor diodes < Semiconductor doping < Semiconductor electrolyte interface  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 27.
[0-20] [0 - 20][0 - 27][20-26][20-40]
Ident.Authors (with country if any)Title
000207 (2008) Growth striations and dislocations in highly doped semiconductor single crystals
000404 (2004-05) MOCVD Growth and Mg-Doping of InAs Layers
000521 (2003-09) Metamorphic Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures with High Electron Mobility Grown on GaAs Substrates
000529 (2003-08) Interaction of Charge Carriers with the Localized Magnetic Moments of Manganese Atoms in p-GaInAsSb/p-InAs:Mn Heterostructures
000577 (2003-02) Effects of Doping and Preliminary Processing on the Magnetically Stimulated Mobility of Dislocations in InSb Single Crystals
000723 (2002-09) Edge Dislocations with Large Burgers Vector in Sphalerite Crystals
000731 (2002-08) Influence of Tellurium Impurity on the Properties of Ga1 - XInXAsYSb1 - Y (X > 0.22) Solid Solutions
000772 (2002-01) New Class of Holographic Materials Based on Semiconductor CdF2 Crystals with Bistable Centers: III. Mechanisms of Recording and Decay of Holographic Gratings
000782 (2002) Towards longwave (5-6 μm) LED operation at 80°C: Injection or extraction of carriers?
000791 (2002) Single mode laser based on InAsSb/InAsSbP double heterostructure with tuning from 3.224 to 3.234 μm
000871 (2001-10) Photocapacitance Effect at Low Temperatures in a Unipolar MIS Capacitor with a Semiconductor Electrode Doped with Two Different Acceptor Impurities
000875 (2001-10) Density of Localized States in (Pb0.78Sn0.22)0.95In0.05Te Solid Solutions
000924 (2001-02) Hopping Transport in Doped (Pb0.78Sn0.22)1 - xInxTe Solid Solutions
000B23 (2000-02) Electrical Properties of Transmutation-Doped Indium Phosphide
000C40 (1999-10) Influence of indium doping on the formation of silicon-(gallium vacancy) complexes in gallium arsenide grown by molecular-beam epitaxy at low temperatures
000C70 (1999-08) Electrical properties of InSb irradiated with fast neutrons from a nuclear reactor
000C80 (1999-07) Electrical properties of nuclear-doped indium antimonide
000C95 (1999-05) Optoelectronic effects in semi-insulating CdTe single crystals and structures based on them
000D12 (1999-03-15) Enhanced precipitation of excess As on antimony delta layers in low-temperature-grown GaAs
000D20 (1999-03) Dopant impurity diffusion from polymer diffusants and its applications in semiconductor device technology. A review
000E34 (1998-10) Effect of In doping on the kinetic coefficients in solid solutions of the system (PbzSn1-z)0.95Ge0.05Te

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